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31. 发明授权

US07884328B2 Microbolometer with improved mechanical stability and method of manufacturing the same 失效
标题翻译：具有改善机械稳定性的微热辐射计及其制造方法
公开(公告)号：US07884328B2
公开(公告)日：2011-02-08
申请号：US12181871
申请日：2008-07-29
申请人： Seong Mok Cho , Ho Jun Ryu , Woo Seok Yang , Sang Hoon Cheon , Byoung Gon Yu , Chang Auck Choi
发明人： Seong Mok Cho , Ho Jun Ryu , Woo Seok Yang , Sang Hoon Cheon , Byoung Gon Yu , Chang Auck Choi
IPC分类号： H01L27/14
CPC分类号： G01J5/20 , B81B3/007 , B81B2201/0207 , B81B2203/0118 , G01J5/02 , G01J5/023 , G01J5/024
摘要： Provided are a microbolometer having a cantilever structure and a method of manufacturing the same, and more particularly, a microbolometer having a three-dimensional cantilever structure, which is improved from a conventional two-dimensional cantilever structure, and a method of manufacturing the same. The method includes providing a substrate including a read-out integrated circuit and a reflective layer for forming an absorption structure, forming a sacrificial layer on the substrate, forming a cantilever structure having an uneven cross-section in the sacrificial layer, forming a sensor part isolated from the substrate by the cantilever structure, and removing the sacrificial layer.
摘要翻译：本发明提供一种具有悬臂结构的微电热计及其制造方法，特别是具有三维悬臂结构的微电热计，其从传统的二维悬臂结构得到改进，及其制造方法。该方法包括提供包括读出集成电路和用于形成吸收结构的反射层的衬底，在衬底上形成牺牲层，在牺牲层中形成具有不均匀横截面的悬臂结构，形成传感器部分通过悬臂结构从衬底隔离，并去除牺牲层。

32. 发明申请

US20100147070A1 HUMIDITY SENSOR AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：湿度传感器及其制造方法
公开(公告)号：US20100147070A1
公开(公告)日：2010-06-17
申请号：US12617701
申请日：2009-11-12
申请人： Chi Hoon JUN , Sang Choon Ko , Chang Auck Choi , Byoung Gon Yu
发明人： Chi Hoon JUN , Sang Choon Ko , Chang Auck Choi , Byoung Gon Yu
IPC分类号： G01N19/10 , B05D5/12 , B44C1/22
CPC分类号： G01N27/121
摘要： Provided are a humidity sensor and a method of manufacturing the same. The humidity sensor has high sensitivity, quick response time, improved temperature characteristics, low hysteresis and excellent durability. Moreover, for the humidity sensor, a humidity sensitive layer may be formed of various materials. The humidity sensor may be manufactured in a small size on a large scale.The humidity sensor includes a substrate, an open cavity with an open upper portion formed to have a depth and a width in the substrate, a plurality of electrode pads formed on the substrate, a heater connected to one pad of the electrode pads at one end, and connected to another pad of the electrode pads at the other end to be suspended over the open cavity, a plurality of sensing electrodes formed on the same plane as the heater, and suspended over the open cavity to output a sensed signal to the electrode pads, a humidity sensitive layer formed on the heater and the sensing electrodes, suspended over the open cavity, and changed in characteristic according to the humidity, and an ambient temperature measurement part configured to measure the temperature around the humidity sensor, wherein the temperature is used as a reference temperature to control a heating temperature of the heater.
摘要翻译：提供了一种湿度传感器及其制造方法。湿度传感器灵敏度高，响应时间快，温度特性好，滞后小，耐久性好。此外，对于湿度传感器，湿度敏感层可以由各种材料形成。湿度传感器可以大规模制造。湿度传感器包括基底，具有形成为在基底中具有深度和宽度的敞开上部的开口腔，形成在基底上的多个电极垫，一端连接到电极垫的一个垫并且在另一端连接到电极焊盘的另一焊盘以悬挂在开放空腔上，多个感测电极形成在与加热器相同的平面上，并且悬挂在开放空腔上以将感测到的信号输出到电极衬垫，形成在加热器上的湿度敏感层和悬挂在开放空腔上的感测电极，并且根据湿度改变特性;以及环境温度测量部件，被配置为测量湿度传感器周围的温度，其中温度为用作参考温度来控制加热器的加热温度。

33. 发明申请

US20090140148A1 BOLOMETER AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：测量仪及其制造方法
公开(公告)号：US20090140148A1
公开(公告)日：2009-06-04
申请号：US12181893
申请日：2008-07-29
申请人： Woo Seok Yang , Seong Mok Cho , Ho Jun Ryu , Sang Hoon Cheon , Byoung Gon Yu , Chang Auck Choi
发明人： Woo Seok Yang , Seong Mok Cho , Ho Jun Ryu , Sang Hoon Cheon , Byoung Gon Yu , Chang Auck Choi
IPC分类号： H01L27/14 , H01L21/00
CPC分类号： G01J5/20
摘要： A bolometer having decreased noise and increased temperature sensitivity and a method of manufacturing the same are provided. The bolometer has a resistive layer formed of single crystalline silicon (Si) or silicon germanium (Si1-xGex, x=0.2˜0.5) having high crystallinity, such that 1/f noise can be reduced and temperature sensitivity can be significantly improved compared to a conventional amorphous silicon bolometer.
摘要翻译：提供了具有降低的噪声和增加的温度敏感度的辐射热量计及其制造方法。测辐射热计具有由具有高结晶度的单晶硅（Si）或硅锗（Si1-xGex，x = 0.2〜0.5）形成的电阻层，使得1 / f噪声可以降低，并且与一种常规的非晶硅测辐射热计。

34. 发明授权

US07335945B2 Multi-gate MOS transistor and method of manufacturing the same 有权
标题翻译：多栅极MOS晶体管及其制造方法
公开(公告)号：US07335945B2
公开(公告)日：2008-02-26
申请号：US11012695
申请日：2004-12-16
申请人： Dae Woo Lee , Tae Moon Roh , Sung Ku Kwon , Il Yong Park , Yil Suk Yang , Byoung Gon Yu , Jong Dae Kim
发明人： Dae Woo Lee , Tae Moon Roh , Sung Ku Kwon , Il Yong Park , Yil Suk Yang , Byoung Gon Yu , Jong Dae Kim
IPC分类号： H01L29/78 , H01L21/8234
CPC分类号： H01L29/785 , H01L29/42384 , H01L29/42392 , H01L29/66795 , H01L29/78645
摘要： Provided are a multi-gate MOS transistor and a method of manufacturing the same. Two silicon fins are vertically stacked on a silicon on insulator (SOI) substrate, and four side surfaces of an upper silicon fin and three side surfaces of a lower silicon fin are used as a channel. Therefore, a channel width is increased, so that current driving capability of a device is improved, and high performance nano-level semiconductor IC and highly integrated memory IC can be manufactured through the optimization and stability of a process.
摘要翻译：提供一种多栅极MOS晶体管及其制造方法。垂直堆叠在硅绝缘体（SOI）基板上的两个硅散热片，上硅片的四个侧表面和下硅片的三个侧表面用作通道。因此，通道宽度增加，从而提高了器件的电流驱动能力，并且可以通过工艺的优化和稳定性来制造高性能纳米级半导体IC和高度集成的存储器IC。

35. 发明申请

US20080135758A1 BOLOMETER AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：测量仪及其制造方法
公开(公告)号：US20080135758A1
公开(公告)日：2008-06-12
申请号：US11776945
申请日：2007-07-12
申请人： Woo Seok YANG , Seong Mok Cho , Hojun Ryu , Byoung Gon Yu
发明人： Woo Seok YANG , Seong Mok Cho , Hojun Ryu , Byoung Gon Yu
IPC分类号： G01J5/00 , H01L21/00 , H01L27/14
CPC分类号： H01L27/14669 , G01J5/20 , H01L27/14683
摘要： Provided are a bolometer and a method of manufacturing the bolometer. The bolometer includes: a semiconductor substrate comprising a detection circuit; a reflective layer disposed in an area of a surface of the semiconductor substrate; metal pads disposed on the surface of the semiconductor substrate beside both sides of the reflective layer to keep predetermined distances from the both sides of the reflective layer; and a sensor structure forming a space corresponding to quarter of an infrared wavelength (λ/4) from a surface of the reflective layer and positioned above the semiconductor substrate, wherein the sensor structure includes: a body including a polycrystalline resistive layer formed of one of doped Si and Si1-xGex (where x=0.2˜0.5) to be positioned above the reflective layer; and support arms positioned outside the body to be electrically connected to the metal pads.
摘要翻译：提供测辐射热度计和制造测辐射热计的方法。测辐射热计包括：包括检测电路的半导体衬底; 设置在所述半导体衬底的表面的区域中的反射层; 设置在半导体衬底的表面上的金属焊盘，位于反射层的两侧，以保持与反射层两侧的预定距离; 以及传感器结构，其从所述反射层的表面形成对应于红外波长（λ/ 4）的四分之一并位于所述半导体衬底上方的空间，其中所述传感器结构包括：主体，包括由以下之一形成的多晶电阻层：掺杂的Si和Si 1-x Ge x x（其中x = 0.2〜0.5）位于反射层上方; 以及位于主体外部的支撑臂，以电连接到金属垫。

36. 发明授权

US06636435B2 Ferroelectric memory cell array and method of storing data using the same 有权
标题翻译：铁电存储单元阵列及使用其存储数据的方法
公开(公告)号：US06636435B2
公开(公告)日：2003-10-21
申请号：US10032987
申请日：2001-12-27
申请人： Yil Suk Yang , Tae Moon Roh , Jong Dae Kim , Byoung Gon Yu
发明人： Yil Suk Yang , Tae Moon Roh , Jong Dae Kim , Byoung Gon Yu
IPC分类号： G11C1122
CPC分类号： G11C11/22
摘要： The present invention relates to a ferroelectric memory cell array formed of a single transistor, and method of storing data using the same. The ferroelectric memory cell array includes a plurality of word lines connected to gates of the memory cells located at respective rows, a plurality of bit lines connected to drains of the memory cells located at respective columns, a common source line commonly connecting sources of the memory cells, and a plurality of well lines each connected to wells in which the memory cells are each formed, wherein a bias voltage of an unit pulse shape is applied to a gate of a selected memory cell and a bias voltage of a pulse shape is applied to a well line. Therefore, the present invention allows a random access without a disturbance since data can be written by means of the polarity characteristic of the ferroelectric.
摘要翻译：本发明涉及由单个晶体管形成的铁电存储单元阵列，以及使用该晶体管存储数据的方法。铁电存储单元阵列包括连接到位于各行的存储单元的栅极的多条字线，连接到位于相应列的存储单元的漏极的多个位线，通常连接存储器的源极的公共源极线单元和多个井管线，每个阱管线连接到其中形成有存储单元的阱，其中单位脉冲形状的偏置电压被施加到所选存储单元的栅极并施加脉冲形状的偏置电压到一条井线因此，本发明允许无障碍地随机存取，因为可以通过铁电体的极性特性写入数据。

37. 发明授权

US08685768B2 Organic light emitting diodes and methods of manufacturing the same 有权
标题翻译：有机发光二极管及其制造方法
公开(公告)号：US08685768B2
公开(公告)日：2014-04-01
申请号：US13494532
申请日：2012-06-12
申请人： Jin Woo Huh , Jeong Ik Lee , Chul Woong Joo , Doo-Hee Cho , Jin Wook Shin , Jaehyun Moon , Jun-Han Han , Joo Hyun Hwang , Hye Yong Chu , Byoung Gon Yu
发明人： Jin Woo Huh , Jeong Ik Lee , Chul Woong Joo , Doo-Hee Cho , Jin Wook Shin , Jaehyun Moon , Jun-Han Han , Joo Hyun Hwang , Hye Yong Chu , Byoung Gon Yu
IPC分类号： H01L21/00
CPC分类号： H01L51/5268 , H01L51/5275
摘要： The inventive concept provides organic light emitting diodes and methods of manufacturing an organic light emitting diode. The organic light emitting diode includes a substrate, a first electrode layer and a second electrode layer formed on the substrate, an organic light emitting layer disposed between the first electrode layer and the second electrode layer and generating light, and a scattering layer between the first electrode layer and the substrate or between the first electrode layer and the organic light emitting layer. The scattering layer scatters the light.
摘要翻译：本发明构思提供有机发光二极管和制造有机发光二极管的方法。有机发光二极管包括基板，第一电极层和形成在基板上的第二电极层，设置在第一电极层和第二电极层之间并产生光的有机发光层和在第一电极层之间的散射层电极层和基板之间或第一电极层和有机发光层之间。散射层散射光。

38. 发明授权

US08053730B2 Infrared sensor and method of fabricating the same 失效
标题翻译：红外线传感器及其制造方法
公开(公告)号：US08053730B2
公开(公告)日：2011-11-08
申请号：US12511251
申请日：2009-07-29
申请人： Seong Mok Cho , Ho Jun Ryu , Woo Seok Yang , Sang Hoon Cheon , Byoung Gon Yu , Chang Auk Choi
发明人： Seong Mok Cho , Ho Jun Ryu , Woo Seok Yang , Sang Hoon Cheon , Byoung Gon Yu , Chang Auk Choi
IPC分类号： G01J5/02
CPC分类号： G01J5/20 , G01J5/02 , G01J5/023 , G01J5/10 , H01L31/022408 , H01L31/108
摘要： An infrared sensor and a method of fabricating the same are provided. The sensor includes a substrate including a reflection layer and a plurality of pad electrodes, an interdigitated sensing electrode connected to the pad electrode and formed to be spaced apart from the reflection layer by a predetermined distance and a sensing layer formed on the sensing electrode and having an opening exposing a portion in which an interdigitated region of the sensing electrode connected to one pad region is separated from the sensing electrode connected to the other pad electrode. Therefore, the sensor has an electrode in a very simple constitution, and a sensing layer divided into rectangular blocks, so that current that non-uniformly flows into the electrode can be removed. Accordingly, the sensor in which current of the sensing layer can be uniformly flown, and noise is lowered can be implemented.
摘要翻译：提供了一种红外线传感器及其制造方法。该传感器包括：基板，包括反射层和多个焊盘电极;连接到焊盘电极并形成为与反射层隔开预定距离的叉指感测电极，以及形成在感测电极上的感测层，连接到一个焊盘区域的感测电极的交错区域与连接到另一个焊盘电极的感测电极分离的部分露出。因此，传感器具有非常简单的结构的电极和分为矩形块的感测层，从而可以去除不均匀地流入电极的电流。因此，可以实现感测层的电流可以均匀地流动并且噪声降低的传感器。

39. 发明授权

US07696478B2 Resistive materials for microbolometer, method for preparation of resistive materials and microbolometer containing the resistive materials 失效
标题翻译：微电热计的电阻材料，电阻材料的制备方法和含电阻材料的微电热计
公开(公告)号：US07696478B2
公开(公告)日：2010-04-13
申请号：US12182496
申请日：2008-07-30
申请人： Ho Jun Ryu , Woo Seok Yang , Seong Mok Cho , Sang Hoon Cheon , Byoung Gon Yu , Chang Auck Choi
发明人： Ho Jun Ryu , Woo Seok Yang , Seong Mok Cho , Sang Hoon Cheon , Byoung Gon Yu , Chang Auck Choi
IPC分类号： G01J5/00
CPC分类号： G01J5/20 , C22C1/04 , C23C14/14 , C23C14/3464
摘要： Provided are resistive materials for a microbolometer, a method for preparation of resistive materials and a microbolometer containing the resistive materials. The resistive materials for the microbolometer include an alloy of silicon and antimony or an alloy of silicon, antimony and germanium, which has a high TCR and a low resistance.
摘要翻译：提供了用于微电热计的电阻材料，用于制备电阻材料的方法和包含电阻材料的微电热计。用于微热辐射计的电阻材料包括硅和锑的合金或硅，锑和锗的合金，其具有高TCR和低电阻。

40. 发明申请

US20090152467A1 MULTILAYER-STRUCTURED BOLOMETER AND METHOD OF FABRICATING THE SAME 失效
标题翻译：多层结构的玻璃及其制造方法
公开(公告)号：US20090152467A1
公开(公告)日：2009-06-18
申请号：US12182456
申请日：2008-07-30
申请人： Sang Hoon Cheon , Ho Jun Ryu , Woo Seok Yang , Seong Mok Cho , Byoung Gon Yu , Chang Auck Choi
发明人： Sang Hoon Cheon , Ho Jun Ryu , Woo Seok Yang , Seong Mok Cho , Byoung Gon Yu , Chang Auck Choi
IPC分类号： G01J5/10 , H01L21/00
CPC分类号： G01J5/20 , G01J5/02 , G01J5/023
摘要： Provided are a multilayer-structured bolometer and a method of fabricating the same. In the multilayer-structured bolometer, the number of support arms supporting the body of a sensor structure is reduced to one, and two electrodes are formed on the one support arm. Thus, the sensor structure is electrically connected with a substrate through the only one support arm. According to the multilayer-structured bolometer and method of fabricating the bolometer, the thermal conductivity of the sensor structure is considerably reduced to remarkably improve sensitivity to temperature, and also the pixel size of the bolometer is reduced to obtain high-resolution thermal images. In addition, the multilayer-structured bolometer can have a high fill-factor due to a sufficiently large infrared-absorbing layer, and thus can improve infrared absorbance.
摘要翻译：提供一种多层结构的测辐射热计及其制造方法。在多层结构的测辐射热计中，支撑传感器结构的主体的支撑臂的数量减少到一个，并且在一个支撑臂上形成两个电极。因此，传感器结构通过仅一个支撑臂与基板电连接。根据多层结构的测辐射热计和制造测辐射热计的方法，传感器结构的导热性显着降低，显着提高了对温度的敏感性，还减小了测辐射热计的像素尺寸以获得高分辨率的热图像。此外，由于具有足够大的红外线吸收层，多层结构的测辐射热计可以具有高的填充因子，因此可以提高红外吸收。

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