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31. 发明授权

US07259866B2 Semiconductor fabricating apparatus with function of determining etching processing state 有权
标题翻译：具有确定蚀刻处理状态功能的半导体制造装置
公开(公告)号：US07259866B2
公开(公告)日：2007-08-21
申请号：US11289394
申请日：2005-11-30
申请人： Tatehito Usui , Motohiko Yoshigai , Kazuhiro Jyouo , Tetsuo Ono
发明人： Tatehito Usui , Motohiko Yoshigai , Kazuhiro Jyouo , Tetsuo Ono
IPC分类号： G01B9/02
CPC分类号： H01J37/32935 , H01L21/67069 , H01L21/67253
摘要： A semiconductor fabricating apparatus for etching a semiconductor wafer, which is placed in a chamber and which has a multiple-layer film composed of a first film formed on a surface thereof and a second film formed on the first film, using plasma generated in the chamber. The semiconductor fabricating apparatus includes a light detector that detects a change in an amount of light with a plurality of wavelengths obtained from the surface of the wafer for a predetermined time during which the second film is etched, and a detection unit that detects a thickness of the first film based on a specific waveform obtained from an output of the detector.
摘要翻译：一种用于蚀刻半导体晶片的半导体制造装置，该半导体制造装置被放置在腔室中，并且具有由在其表面上形成的第一膜构成的多层膜和在第一膜上形成的第二膜，。半导体制造装置包括：光检测器，其在第二膜被蚀刻的预定时间内检测从晶片的表面获得的多个波长的光量的变化;以及检测单元，其检测厚度基于从检测器的输出获得的特定波形的第一胶片。

32. 发明授权

US07169254B2 Plasma processing system and apparatus and a sample processing method 有权
标题翻译：等离子体处理系统和设备及样品处理方法
公开(公告)号：US07169254B2
公开(公告)日：2007-01-30
申请号：US10732285
申请日：2003-12-11
申请人： Toshio Masuda , Tatehito Usui , Mitsuru Suehiro , Hiroshi Kanekiyo , Hideyuki Yamamoto , Kazue Takahashi , Hiromichi Enami
发明人： Toshio Masuda , Tatehito Usui , Mitsuru Suehiro , Hiroshi Kanekiyo , Hideyuki Yamamoto , Kazue Takahashi , Hiromichi Enami
IPC分类号： H01L21/00 , C23C16/00 , C23C14/00
CPC分类号： H01L21/67069 , G01N21/68 , H01J37/32082 , H01J37/32935 , H01J37/32972
摘要： A plasma processing apparatus having a sample stage disposed inside a vacuum chamber and a plate member disposed opposing to a sample which is placed on the sample stage and supplied with electric power. The sample is processed using a plasma generated between the sample stage and the plate member and a measuring port is disposed at a back side of the plate member. The measuring port includes an optical transmitter which receives light from a surface of the sample, and a seal which vacuum-seals between an atmospheric side and vacuum side of the vacuum chamber.
摘要翻译：一种等离子体处理装置，其具有设置在真空室内的样品台和与放置在样品台上并提供电力的样品相对设置的板构件。使用在样品台和板构件之间产生的等离子体处理样品，并且测量端口设置在板构件的后侧。测量端口包括从样品表面接收光的光发射器，以及在真空室的大气侧和真空侧之间进行真空密封的密封件。

33. 发明授权

US06797529B2 Processing apparatus with measuring unit and method 失效
标题翻译：具有测量单元和方法的加工设备
公开(公告)号：US06797529B2
公开(公告)日：2004-09-28
申请号：US10385698
申请日：2003-03-12
申请人： Toru Otsubo , Tatehito Usui
发明人： Toru Otsubo , Tatehito Usui
IPC分类号： H01L3126
CPC分类号： G01B11/0675
摘要： A measuring apparatus includes an irradiator which irradiates measuring light from a back of a substrate as the measuring light is totally reflectable from both first and second surfaces formed on the surface sides of the substrate, and a measurement unit which causes reflected lights of the measuring light irradiated by the irradiator means and reflected from the first and second surfaces to interfere with each other to thereby measure a distance between the first and second surfaces.
摘要翻译：测量装置包括：辐射器，当测量光从形成在基板的表面侧上的第一和第二表面全反射时，照射来自基板背面的测量光;以及测量单元，其使得测量光的反射光由照射器装置照射并从第一表面和第二表面反射，彼此干涉，从而测量第一和第二表面之间的距离。

34. 发明授权

US06537832B2 Measuring apparatus and film formation method 失效
公开(公告)号：US06537832B2
公开(公告)日：2003-03-25
申请号：US09844629
申请日：2001-05-01
申请人： Toru Otsubo , Tatehito Usui
发明人： Toru Otsubo , Tatehito Usui
IPC分类号： H01L3126
CPC分类号： G01B11/0675
摘要： A film formation monitor of a plasma CVD apparatus includes a light source for generating measuring light. Measuring light generated from the light source is guided to an optical system having lenses and mirrors, and is irradiated to a silicon substrate at a plurality of angles of incidence with the back of the silicon substrate being substantially a focus. Reflected light from the substrate is incident into a spectroscope. An intensity of measuring light is detected for each wavelength. A calculation apparatus calculates an etching depth. Reflected light from the back of the substrate interferes with reflected light from an etchd surface. To reduce influences of reflected light from the back of the substrate, measuring light is irradiated while its angle of incidence is varied.

35. 发明申请

US20090301655A1 Plasma Processing Apparatus 审中-公开
标题翻译：等离子体处理装置
公开(公告)号：US20090301655A1
公开(公告)日：2009-12-10
申请号：US12484288
申请日：2009-06-15
申请人： Kenetsu Yokogawa , Tatehito Usui
发明人： Kenetsu Yokogawa , Tatehito Usui
IPC分类号： C23F1/08
CPC分类号： H01J37/32972 , H01J37/32935 , H01L21/31116 , H01L21/32137
摘要： A plasma processing apparatus includes an upper electrode which allows a source gas to flow into a vacuum chamber via a shower plate, a lower electrode facing the upper electrode, on which a sample to be processed is placed, and a detector which detects light from the surface of the sample to be processed via the shower plate. The detector includes at least one light introducing section made up of a transparent body to which the light is input and a spectroscope which analyzes the light obtained at the light introducing section. A plurality of the light-introducing through holes are provided in the shower plate for the at least one light introducing section, and the at least one light introducing section is made up of two members.
摘要翻译：一种等离子体处理装置，包括：上部电极，其允许源气体经由喷淋板流入真空室;面向上部电极的下部电极，待处理样品被放置在所述上部电极上;以及检测器，通过淋浴板处理样品的表面。检测器包括至少一个由输入光的透明体构成的光导部分和分析光导入部所得的光的分光镜。在用于至少一个光导入部的喷淋板中设置有多个导光孔，并且所述至少一个光导入部由两个部件构成。

36. 发明申请

US20070131354A1 Plasma processing apparatus 审中-公开
标题翻译：等离子体处理装置
公开(公告)号：US20070131354A1
公开(公告)日：2007-06-14
申请号：US11353165
申请日：2006-02-14
申请人： Kenetsu Yokogawa , Tatehito Usui
发明人： Kenetsu Yokogawa , Tatehito Usui
IPC分类号： H01L21/306 , C23F1/00
CPC分类号： H01J37/32972 , H01J37/32935 , H01L21/31116 , H01L21/32137
摘要： The present invention makes an improvement of the sensitivity (accuracy) of monitoring of an amount of etching or remaining amount of etching on the surface of a sample to be processed of a plasma processing apparatus compatible with a long-term continuous stable operation. A transparent body end face of a light introducing section which detects a wavelength of reflected light from the surface of the sample to be processed 3 and a variation in light intensity of each wavelength is placed at a spatial distance equal to or greater than 5 times a mean free path of gas molecules in a vacuum chamber 1 from a boundary of plasma.
摘要翻译：本发明提高了对与长期连续稳定操作兼容的等离子体处理装置的待处理样品的表面上的蚀刻量或残留蚀刻量的监测的灵敏度（精度）的提高。检测来自待处理样品3的表面的反射光的波长和每个波长的光强度变化的光导入部分的透明体端面设置在等于或大于5倍的空间距离在真空室1中从等离子体边界的气体分子的平均自由程。

37. 发明授权

US06755932B2 Plasma processing system and apparatus and a sample processing method 有权
标题翻译：等离子体处理系统和设备及样品处理方法
公开(公告)号：US06755932B2
公开(公告)日：2004-06-29
申请号：US09788463
申请日：2001-02-21
申请人： Toshio Masuda , Tatehito Usui , Mitsuru Suehiro , Hiroshi Kanekiyo , Hideyuki Yamamoto , Kazue Takahashi , Hiromichi Enami
发明人： Toshio Masuda , Tatehito Usui , Mitsuru Suehiro , Hiroshi Kanekiyo , Hideyuki Yamamoto , Kazue Takahashi , Hiromichi Enami
IPC分类号： H05H100
CPC分类号： H01L21/67069 , G01N21/68 , H01J37/32082 , H01J37/32935 , H01J37/32972
摘要： The object of the present invention is to provide a plasma processing apparatus wherein plasma is generated in process chamber to treat a sample. Said plasma processing apparatus is further characterized in that multiple closely packed through-holes are formed on the plate installed on the UHF antenna arranged opposite to the sample, an optical transmitter is installed almost in contact with the back of the through-holes, and an optical transmission means is arranged on the other end of said optical transmitter, thereby measuring optical information coming from the sample and plasma through optical transmitter and optical transmission means by means of a measuring instrument. No abnormal discharge or particle contamination occur to through-holes even in long-term discharge process, and no deterioration occurs to the optical performance at the end face of the optical transmitter. Said plasma processing apparatus ensures stable and high precision measurement of the state of the surface of sample and plasma for a long time.
摘要翻译：本发明的目的是提供一种等离子体处理装置，其中在处理室中产生等离子体以处理样品。所述等离子体处理装置的特征还在于，在安装在与样品相对布置的UHF天线上的板上形成多个紧密堆积的通孔，光发射器几乎与通孔背面几乎接触，并且光传输装置设置在所述光发射机的另一端，借助于测量仪器通过光发射机和光传输装置测量来自样本和等离子体的光信息。即使在长期放电过程中也不会对通孔发生异常放电或颗粒污染，并且在光发射机的端面处的光学性能不会劣化。所述等离子体处理装置长时间保证对样品和等离子体表面的状态的稳定和高精度的测量。

38. 发明授权

US06503364B1 Plasma processing apparatus 有权
标题翻译：等离子体处理装置
公开(公告)号：US06503364B1
公开(公告)日：2003-01-07
申请号：US09651720
申请日：2000-08-30
申请人： Toshio Masuda , Tatehito Usui , Shigeru Shirayone , Kazue Takahashi , Mitsuru Suehiro
发明人： Toshio Masuda , Tatehito Usui , Shigeru Shirayone , Kazue Takahashi , Mitsuru Suehiro
IPC分类号： C23C1600
CPC分类号： H01J37/32935 , H01J37/32009 , H01J37/32972
摘要： In the plasma processing apparatus for generating plasma in a processing chamber and processing a wafer by mutual action of electromagnetic waves radiated from a UHF band antenna installed in the processing chamber and a magnetic field formed by a magnetic field generator installed around the processing chamber, a hollow tube having one end in communication with an opening in the side wall of the processing chamber and another end, outside the processing chamber, which has a measuring window of plasma optical emission. By setting the lines of force of the magnetic field formed by the magnetic field generator so as to form an angle relative to the hollow tube, entry of plasma into the hollow tube can be prevented, and adhesion of deposits onto the measuring window can be suppressed, whereby the transmission factor of the measuring window can be kept constant over a long period of use.
摘要翻译：在处理室中产生等离子体的等离子体处理装置中，通过从安装在处理室中的UHF带状天线辐射的电磁波的相互作用和由设置在处理室周围的磁场发生部形成的磁场进行相互作用来处理晶片，中空管具有与处理室的侧壁中的开口连通的一端，以及具有等离子体光发射测量窗的处理室外的另一端。通过设置由磁场发生器形成的磁场的力线以相对于中空管形成一个角度，可以防止等离子体进入中空管，并且可以抑制沉积物粘附到测量窗口上由此，可以在长时间使用时测量窗口的透射系数保持恒定。

39. 发明授权

US06427621B1 Plasma processing device and plasma processing method 失效
标题翻译：等离子体处理装置和等离子体处理方法
公开(公告)号：US06427621B1
公开(公告)日：2002-08-06
申请号：US09550169
申请日：2000-04-14
申请人： Masato Ikegawa , Tsutomu Tetsuka , Ichiro Sasaki , Tatehito Usui , Hironobu Kawahara
发明人： Masato Ikegawa , Tsutomu Tetsuka , Ichiro Sasaki , Tatehito Usui , Hironobu Kawahara
IPC分类号： C23C16511
CPC分类号： H01J37/32266 , C23C16/509 , H01J37/32192
摘要： In the plasma processing device for supplying electromagnetic waves to the first plate, generating plasma in the vacuum atmosphere between the first plate and the second plate which is arranged opposite to it, and processing the board loaded on the second plate, wherein the dielectric window for propagating electromagnetic waves is installed in the outer periphery of the first plate and in the window, the electromagnetic wave distribution corrector composed of an electrical conductor or a dielectric is embedded away from the first plate so that at least the side and bottom of the electromagnetic wave distribution corrector are not exposed in the aforementioned vacuum atmosphere. The electromagnetic wave distribution corrector corrects one-siding of the plasma density distribution at the center.
摘要翻译：在用于向第一板提供电磁波的等离子体处理装置中，在与其相对设置的第一板和第二板之间的真空气氛中产生等离子体，并且处理装载在第二板上的板，其中，传播电磁波被安装在第一板的外周和窗口中，由电导体或电介质组成的电磁波分布校正器被从第一板被嵌入，使得至少电磁波的侧面和底部分布校正器在上述真空气氛中不暴露。电磁波分布校正器校正了中心处等离子体密度分布的一面。

40. 发明授权

US06373681B1 Electrostatic chuck, and method of and apparatus for processing sample using the chuck 有权
公开(公告)号：US06373681B1
公开(公告)日：2002-04-16
申请号：US09833557
申请日：2001-04-13
申请人： Seiichiro Kanno , Tatehito Usui , Ken Yoshioka , Saburo Kanai , Youichi Itou
发明人： Seiichiro Kanno , Tatehito Usui , Ken Yoshioka , Saburo Kanai , Youichi Itou
IPC分类号： H02N1300
摘要： A sample processing method includes electrostatically attracting and holding a sample on an electrostatic chuck which includes a pair of electrodes having different polarities and being concentrically disposed, and a dielectric film formed on top surfaces of the pair of electrodes, by applying a DC voltage between the pair of electrodes. The sample which is attracted and held on the chuck through the dielectric film is subjected to plasma processing while applying a bias voltage. The application of the bias voltage applied during plasma processing is stopped after termination of processing the sample, and an unbalance between electric charges stored on attracting portions of the dielectric film formed on the electrodes is eliminated by continuing generation of the plasma for a specific time after stopping the application of the bias voltage. The plasma is extinguished after an elapse of the specific time.

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