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    • 34. 发明申请
    • METHOD OF FABRICATION OF HIGHLY HEAT DISSIPATIVE SUBSTRATES
    • 高热耗散基板的制造方法
    • WO2008096194A1
    • 2008-08-14
    • PCT/IB2007/000950
    • 2007-02-08
    • S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIESKONONCHUK, OlegLETERTRE, FabriceLANGER, Robert
    • KONONCHUK, OlegLETERTRE, FabriceLANGER, Robert
    • H01L21/762
    • H01L21/76254
    • The invention relates to a method for fabricating a composite structure having heat dissipation properties greater than a bulk single crystal silicon structure having the same dimensions, the structure comprising a support substrate, a top layer and an oxide layer between the support substrate and the top layer, the method comprising the steps of: a) providing a top layer made of a crystalline material, b) bonding the top layer with a support substrate made of a polycrystalline material having high heat dissipation properties, such that an oxide layer is formed at the bonding interface, in order to obtain said structure, characterized in that it further comprises a heat treatment of the structure in an inert or reducing atmosphere at a predetermined temperature and a predetermined duration to increase the heat dissipation properties by dissolving at least a part of the oxide layer.
    • 本发明涉及一种制造具有大于具有相同尺寸的本体单晶硅结构的散热特性的复合结构的方法,该结构包括支撑基板和顶层之间的支撑基板,顶层和氧化物层 所述方法包括以下步骤:a)提供由结晶材料制成的顶层,b)将顶层与由具有高散热性质的多晶材料制成的支撑衬底结合,使得氧化物层形成在 接合界面,以获得所述结构,其特征在于,其还包括在预定温度和预定持续时间内在惰性或还原性气氛中对结构进行热处理,以通过将至少一部分 氧化层。