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    • 34. 发明公开
    • OPTOELEKTRONISCHES HALBLEITERBAUELEMENT
    • EP2606514A1
    • 2013-06-26
    • EP11752154.2
    • 2011-08-18
    • Osram Opto Semiconductors Gmbh
    • ZITZLSPERGER, MichaelRAMCHEN, Johann
    • H01L33/48H01L33/62
    • F21K9/00F21V29/85H01L33/486H01L33/62H01L33/64H01L2224/48247H01L2224/48471H01L2924/00H01L2224/48227
    • The invention relates to an optoelectronic semi-conductor component comprising a substrate (1) that has an upper side (12) and an under side (11) lying opposite said upper side (12), said substrate (1) being formed with an electrically conductive mounting region (1A), an electrically conductive connection region (1C) and an electrically isolating oxidation region (1B); and at least one optoelectronic part (2) which is arranged on the upper side of the substrate (1) in the region of the mounting region (1A), the oxidation region (1B) electrically isolating the mounting region (1A) from the connection region (1C), the oxidation region (1B) extending, without interruption, from the upper side (12) of the substrate (1) to the underside (11) of the substrate (1), the mounting region (1A) and the connection region (1B) being formed with aluminium (10), the oxidation region (1B) being formed with an oxide (15) of the aluminium (10), and the mounting region (1A), the oxidation region (1B) and the connection region (1C) being designed contiguously to form an entity.
    • 本发明涉及一种包括基板(1)的光电子半导体部件,所述基板具有与所述上侧(12)相对的上侧(12)和下侧(11),所述基板(1)形成有电 (1A),导电连接区域(1C)和电隔离氧化区域(1B); 和至少一个光电子部件(2),其在安装区域(1A)的区域中布置在基板(1)的上侧上,氧化区域(1B)将安装区域(1A)与连接部件 所述氧化区域(1B)从所述衬底(1)的上侧(12)延伸到所述衬底(1)的下侧(11),所述安装区域(1A)和所述衬底 (10)形成氧化区(1B),所述氧化区(1B)由所述铝(10)的氧化物(15)形成,并且所述安装区(1A),所述氧化区(1B)和所述氧化区 连接区域(1C)被连续地设计以形成实体。