专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

31. 发明专利

JPH0555110A METHOD AND APPARATUS FOR PROJECTION EXPOSURE OF LINE PATTERN 失效
公开(公告)号：JPH0555110A
公开(公告)日：1993-03-05
申请号：JP23575391
申请日：1991-08-23
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： TAMECHIKA EMI , KOMATSU KAZUHIKO , MATSUO SEITARO , TAKEUCHI YOSHINOBU , HARADA KATSUYUKI , MIMURA YOSHIAKI
IPC分类号： G03F7/20 , H01L21/027 , H01L21/30
摘要： PURPOSE:To set the degree of expansion and inclination of an incident light flux to correspond to a pattern for forming an excellent fine pattern by making an aperture diaphragm of a secondary light source emission part of projection exposure removable or by allowing the aperture diaphragm to have an aperture area adjusting function. CONSTITUTION:Between a first projection lens 13 and a second projection lens 14, a projection aperture diaphragm 15 is located. Light which is diffracted by a mask pattern of a reticle 12 forms an image on the surface of a wafer 16 through the projection lens system. A condensing lens system 11 having a zooming function is installed and is so adjusted that a light source may be located on a minus-side focal plane of this lens system at all times. When a magnification, namely, a focal distance, of the condensing lens 11 is changed, a high resolution can be stably obtained in the pattern formation of an LSI, etc., wherein a focal position is not changed in each of the cases when an inclination of oblique incidence is small (a) and when it is large (b). Consequently, the degree of integration and a reliability can be increased.

32. 发明专利

JPH0529190A PROJECTION EXPOSING METHOD FOR FINE PATTERN 失效
公开(公告)号：JPH0529190A
公开(公告)日：1993-02-05
申请号：JP15740191
申请日：1991-06-03
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： TAKEUCHI YOSHINOBU , MATSUO SEITARO , KOMATSU KAZUHIKO , TAMECHIKA EMI , HARADA KATSUYUKI
IPC分类号： H01L21/30 , G03F7/20 , H01L21/027
摘要： PURPOSE:To impart resolution equivalent to that of a phase shift masking method for a linear pattern to an imaging system via a projection lens without using a phase shift film for a mask pattern by inclining an optical axis of an irradiating light to irradiate a mask, and setting the value of the inclination corresponding to various basic amounts of the lens. CONSTITUTION:When a light I having a spatially coherent wave number K0 irradiates at an oblique angle alpha to an optical axis Z for a normal mask M, i.e., in a direction directed from a center of a masklike (M) optical axis Z toward an edge of an aperture A, a wave I1 diffracted by the mask M and transmitted becomes a wave having an angle 2alpha' to an incident light and hence becomes a wave having a wave number K1. Thus, an imaging can be performed with maximum resolution of a projection lens. Further, resolution equivalent to that of a phase shift masking method can be performed for an arbitrary pattern. Accordingly, integration and reliability can be improved for the formation of a fine pattern for an LSI, etc.

33. 发明专利

JPH0452770A RESIZING METHOD FOR POLYGON GROUP 失效
公开(公告)号：JPH0452770A
公开(公告)日：1992-02-20
申请号：JP15568490
申请日：1990-06-14
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： TAZAWA SATOSHI , OKUBO TSUNEO , SAITO KAZUYUKI , KOMATSU KAZUHIKO
IPC分类号： G06F17/50
摘要： PURPOSE:To shorten processing time by inserting a virtual side whose length is zero into a required place at the time of giving contact information and giving contact information to the virtual side if necessary. CONSTITUTION:A regular edge is defined in a part which is not brought into contact with other polygon on respective sides showing the outlines of respective polygons. A contact edge 20 is defined in a contact part on the side of one polygon, and the regular edge on the contact part of the side of the other polygon in the part which is brought into contact with the other polygon. The regular edge whose length is zero or the contact edge 30 is inserted into all boundary points of the regular edge and the contact edge 20 as to mixed sides. A straight line obtained by shifting it in parallel in a direction to be resized by a resized quantity is assumed for the regular edge and the straight lines obtained by shifting them in parallel in a direction opposite to the direction to be resized by the resized quantity are assumed to be the contact edges 20 and 30. Then, respective apexes are shifted to the position of the intersection point of two assumed straight lines. Thus, resizing processing time is shortened.

34. 发明专利

JPH0426109A METHOD OF GENERATING FIGURE PATTERN 失效
公开(公告)号：JPH0426109A
公开(公告)日：1992-01-29
申请号：JP13106990
申请日：1990-05-21
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： KOMATSU KAZUHIKO , MATSUDA KOREHITO
IPC分类号： H01L21/30 , H01L21/027
摘要： PURPOSE:To automatically produce pattern data of a light and an EB respectively on a calculator and also to easily generate a mask pattern which is proper to characteristics of a pattern exposing device by generating two kinds of mask patterns for an arbitrary LSI pattern. CONSTITUTION:A mask pattern (designed pattern figure) P0 as a basic one is thinned by a width L1 and the resultant pattern P1 is thickened by a width L2, resulting in a generation of a pattern Pph. Also, the pattern P1 is subtracted from the mask pattern P0 and the resultant pattern Peb is obtained. At this time, L1 > L2 is satisfied. The pattern Pph is used in a pattern forming method corresponding to a wide area, for example, a photo-transfer, whereas the pattern Peb is used in a minute pattern forming method which is typified by an EB drawing.

35. 发明专利

JPS6436018A MASK FOR X-RAY EXPOSURE 失效
公开(公告)号：JPS6436018A
公开(公告)日：1989-02-07
申请号：JP19200887
申请日：1987-07-31
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： OKI SHIGEHISA , YOSHIKAWA AKIRA , HORIUCHI TOSHIYUKI , DEGUCHI KIMIKICHI , KOMATSU KAZUHIKO
IPC分类号： G03F1/00 , H01L21/027 , H01L21/30
摘要： PURPOSE:To improve the reproducibility and to keep a low stress value by a method wherein a metal material mainly composed of tantalum and carbon is used as an X-ray absorber. CONSTITUTION:A target composed of tantalum is sputtered in a mixed gas of argon, carbon dioxide and oxygen by a high-frequency reactive sputtering method; a TaxCyOz thin film is deposited. Here, x, y and z satisfy a relationship of x+y+z=7, and they indicate a composition ratio of the respective elements. In this case, a ratio of numbers of atoms of carbon to oxygen is to be between 1/2 and 2. If the TaxCyOz is used as an X-ray absorber in this manner, an X-ray mask whose film stress of the X-ray absorber is low can be manufactured with good reproducibility without spoiling the X-ray absorptive power.

36. 发明专利

JPS6317331B2 失效
公开(公告)号：JPS6317331B2
公开(公告)日：1988-04-13
申请号：JP15938081
申请日：1981-10-08
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： SUZUKI MASANORI , SAKAKIBARA YUTAKA , KOMATSU KAZUHIKO
IPC分类号： H01L21/027 , H01J37/317

37. 发明专利

JPS60257053A CHARGED PARTICLE BEAM APPARATUS 失效
公开(公告)号：JPS60257053A
公开(公告)日：1985-12-18
申请号：JP11246984
申请日：1984-06-01
申请人： NIPPON ELECTRON OPTICS LAB , NIPPON TELEGRAPH & TELEPHONE
发明人： KITAYAMA TOYOKI , MORIYA SHIGERU , KOMATSU KAZUHIKO , GOTOU TOSHINORI
IPC分类号： H01J37/12 , H01J37/10 , H01J37/153 , H01J37/30 , H01J37/305 , H01J37/317 , H01L21/027 , H01L21/265
摘要： PURPOSE:To change formation of particle beam image by arranging a multi-pole charged particle lens at the image surface of charged particle lens. CONSTITUTION:The section of electron beam emitted from an electron gun 1 is shaped to a square by an aperture of mask plate 2M. The beam sent from the aperture is focused almost at the center of electrostatic type quadrupole lens 4 by an electron lens 3. A square beam image (space image) receives an attracting force from the electrode plates 4c, 4d and also receives a repulsion force from the electrode plates 4a, 4b. Therefore, an image passing through a squeezing surface of the electron lens 9 is shaped to a rectangular form indicated by symbols ABCD and an image focused on the material 10 by the electron lens 9 is also formed into a rectangular form indicated by simbols A', B', C', D'. Length ratio of vertical and horizontal sides can be controlled depending on a voltage applied to the electrostatic electrode plate of quadrupole lens 4.

38. 发明专利

JPH09260255A PROJECTION EXPOSURE METHOD 失效
公开(公告)号：JPH09260255A
公开(公告)日：1997-10-03
申请号：JP6854796
申请日：1996-03-25
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： HORIUCHI TOSHIYUKI , MIMURA YOSHIAKI , HARADA KATSUYUKI , KOMATSU KAZUHIKO
IPC分类号： G03F7/20 , G02B1/12 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To form a smaller microscopic pattern by a method wherein the partial coherent coefficients, which correspond to those of circular secondary light sources having outer and inner diameters equal to those of torus-shaped secondary light sources, of the torus-shaped secondary light sources are set at a value within a specified range, the reflectance of exposure light from a substrate to be exposed is set at a specified one or lower and the film thickness of a resist is formed in a thickness of the value or lower of a specified formula. SOLUTION: An antireflection film 3 is formed on a silicon wafer 1, which is mirror-finished, so that the reflectance of exposure rays is 0.5% or lower and a resist film 4 is formed on this film 3 in a thickness of 3.λ/(2n) or thinner. Here, the (λ) is assumed an exposure wavelength and the (n) is assumed the refractive index of the resist film. Therefore, the resolution of the resist film can be significantly enhanced. Here, by using torus-shaped secondary light sources, which have the mean value (σm) of the partial coherent coefficients to correspond to those of circular secondary light sources having outer and inner diameters equal to those of the torus-shaped secondary light sources within the range of 0.61 to 0.73 and have the value (Δσ) of 1/2 of the difference between their coherent coefficients within the range of 0.05 to 0.15, in combination with each other, a high-resolution pattern transfer can be made even in a low contrast of about 0.4.

39. 发明专利

JPH0521333B2 失效
公开(公告)号：JPH0521333B2
公开(公告)日：1993-03-24
申请号：JP3162385
申请日：1985-02-21
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： URISU TSUNEO , UCHIUMI JUICHI , KURAKI OKU , KOMATSU KAZUHIKO
IPC分类号： G03F7/20 , H01L21/027 , H01L21/30

40. 发明专利

JPH0567553A PROJECTION ALIGNER OF FINE PATTERN 失效
公开(公告)号：JPH0567553A
公开(公告)日：1993-03-19
申请号：JP25430691
申请日：1991-09-06
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： HARADA KATSUYUKI , MATSUO SEITARO , TAKEUCHI YOSHINOBU , KOMATSU KAZUHIKO , TAMECHIKA EMI , MIMURA YOSHIAKI
IPC分类号： H01L21/30 , G03F7/20 , H01L21/027
摘要： PURPOSE:To increase the process margin of the formation of a pattern by constituting an optical system wherein an MTF (the frequency dependence of a contrast) is not lowered in a high-frequency region and a steep MTF curve is given. CONSTITUTION:The projection aligner of a fine pattern is provided with a means wherein a beam of light with which a mask is irradiated is tilted at an angle corresponding to the numerical aperture of a projection lens with reference to its optical axis. When viewed inside a plane perpendicular to the optical axis, the mask is illuminated by means of four circular ring-shaped light sources 21 from four directions which are symmetric with respect to the optical axis. As a result, when the four circular ring-shaped light sources 21 are arranged in positions which are symmetric with respect to the optical axis, the resolution of L and S patterns which cross at right angles is enhanced, and an MTF curve can be made steep with reference to a spatial frequency.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式