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    • 32. 发明申请
    • Semiconductor device and fabrication method thereof
    • 半导体器件及其制造方法
    • US20070164386A1
    • 2007-07-19
    • US11648045
    • 2006-12-28
    • Cheng-Yi ChangChien-Ping HuangYu-Po WangChih-Ming HuangCheng-Hsu Hsiao
    • Cheng-Yi ChangChien-Ping HuangYu-Po WangChih-Ming HuangCheng-Hsu Hsiao
    • H01L31/0203H01L21/56
    • H01L27/14687H01L24/97H01L27/14618H01L2224/48091H01L2224/48227H01L2224/8592H01L2224/97H01L2924/01033H01L2924/15311H01L2924/16195H01L2224/85H01L2924/00014
    • A semiconductor device and the fabrication method thereof are provided. The fabrication method includes providing a substrate module plate having a plurality of substrates; attaching at least one sensor chip to each of the substrates of the substrate module plate; electrically connecting each of the sensor chips to each of the substrates through bonding wires; forming an insulating layer between each sensor chip on the substrate module plate, wherein the height of the insulating layers are not greater than the thickness of the sensor chips so as to prevent flash from the insulating layers from contaminating the sensor chips; forming an adhesive lip on the insulating layer or forming a second insulating layer followed by forming the adhesive layer, wherein the adhesive layer or the second insulating layer is higher than the highest loop-height of the bonding wires; adhering a light transmitting cover to each adhesive layer to cover the sensor chip; and cutting the substrate module plate to separate the substrates to form a plurality of semiconductor devices each integrated with at least one sensor chip. As the adhesive layers are not in contact with the bonding wires, the problems of damaging or breaking the bonding wires can be prevented in the process of adhering the light transmitting cover.
    • 提供半导体器件及其制造方法。 该制造方法包括提供具有多个基板的基板模块板; 将至少一个传感器芯片附接到所述基板模块板的每个基板; 通过接合线将每个传感器芯片电连接到每个基板; 在衬底模块板上的每个传感器芯片之间形成绝缘层,其中绝缘层的高度不大于传感器芯片的厚度,以防止来自绝缘层的闪光污染传感器芯片; 在所述绝缘层上形成粘合剂唇缘或形成第二绝缘层,接着形成所述粘合剂层,其中所述粘合剂层或所述第二绝缘层高于所述接合线的最高环高度; 将透光盖粘附到每个粘合剂层以覆盖传感器芯片; 以及切割所述基板模块板以分离所述基板以形成多个半导体器件,每个半导体器件与至少一个传感器芯片集成。 由于粘合层不与接合线接触,所以在粘接透光罩的过程中可以防止损坏或断裂接合线的问题。
    • 36. 发明申请
    • Stackable semiconductor device and manufacturing method thereof
    • 可堆叠半导体器件及其制造方法
    • US20080251937A1
    • 2008-10-16
    • US12082724
    • 2008-04-11
    • Chin-Huang ChangChien-Ping HuangChih-Ming HuangCheng-Hsu Hsiao
    • Chin-Huang ChangChien-Ping HuangChih-Ming HuangCheng-Hsu Hsiao
    • H01L23/52H01L21/00
    • H01L21/76898H01L25/0657H01L2224/48091H01L2225/06513H01L2225/06551H01L2225/06562H01L2924/00014
    • A stackable semiconductor device and a manufacturing method thereof are disclosed. The method includes providing a wafer comprised of a plurality of chips, wherein a plurality of solder pads are formed on the active surface of each chip, and a plurality of grooves are formed between the solder pads of any two adjacent ones of the chips; forming a dielectric layer on regions between the solder pads of any two adjacent ones of the chips ; forming a metal layer on the dielectric layer electrically connected to the solder pads and forming a connective layer on the metal layer, wherein the width of the connective layer is smaller than that of the metal layer; cutting along the grooves to break off the electrical connection between adjacent chips; thinning the non-active surface of the wafer to the extent that the metal layer is exposed from the wafer; and separating the chips to form a plurality of stackable semiconductor devices. Accordingly, a multi-chip stack structure can be obtained by stacking and electrically connecting a plurality of semiconductor devices through the electrical connection between the connective layer of a semiconductor device and the metal layer of another semiconductor device, thereby effectively integrating more chips without having to increase the stacking area, and further the problems of poor electrical connection, complicated manufacturing processes and high costs known in the prior art can be avoided.
    • 公开了一种可堆叠半导体器件及其制造方法。 该方法包括提供由多个芯片组成的晶片,其中在每个芯片的有源表面上形成多个焊盘,并且在任何两个相邻芯片的焊盘之间形成多个沟槽; 在任何两个相邻芯片的焊盘之间的区域上形成电介质层; 在与所述焊料焊盘电连接的所述电介质层上形成金属层,并在所述金属层上形成连接层,其中所述连接层的宽度小于所述金属层的宽度; 沿着凹槽切割以破坏相邻芯片之间的电连接; 使晶片的非活性表面变薄至金属层从晶片露出的程度; 并分离所述芯片以形成多个可堆叠半导体器件。 因此,通过半导体器件的连接层与另一半导体器件的金属层之间的电连接层叠并电连接多个半导体器件,可以获得多芯片堆叠结构,从而有效地集成更多的芯片,而不必 增加堆积面积,进一步避免了现有技术中已知的电连接不良,制造工艺复杂,成本高的问题。
    • 37. 发明申请
    • Sensor semiconductor device and manufacturing method thereof
    • 传感器半导体器件及其制造方法
    • US20080197438A1
    • 2008-08-21
    • US12070003
    • 2008-02-14
    • Chang-Yueh ChanChien-Ping HuangTse-Wen ChangChih-Ming HuangCheng-Hsu Hsiao
    • Chang-Yueh ChanChien-Ping HuangTse-Wen ChangChih-Ming HuangCheng-Hsu Hsiao
    • H01L31/0203H01L31/18
    • H01L31/0203H01L21/78H01L27/14618H01L27/14687H01L2224/94
    • This invention discloses a sensor semiconductor device and a manufacturing method thereof, including: providing a wafer having a plurality of sensor chips, forming a plurality of grooves between bond pads on active surfaces of the adjacent sensor chips; forming conductive traces in the grooves for electrically connecting the bond pads; mounting a transparent medium on the wafer for covering sensing areas of the sensor chips; thinning the sensor chips from the non-active surfaces down to the grooves, thereby exposing the conductive traces; cutting the wafer to separate the sensor chips; mounting the sensor chips on a substrate module having a plurality of substrates, electrically connecting the conductive traces to the substrates; providing an insulation material on the substrate module and between the sensor chips so as to encapsulate the sensor chips but expose the transparent medium; and cutting the substrate module to separate a plurality of resultant sensor semiconductor devices.
    • 本发明公开了一种传感器半导体器件及其制造方法,包括:提供具有多个传感器芯片的晶片,在相邻传感器芯片的有源表面上的接合焊盘之间形成多个沟槽; 在沟槽中形成导电迹线以电连接接合焊盘; 在所述晶片上安装透明介质以覆盖所述传感器芯片的感测区域; 将传感器芯片从非活性表面减薄到凹槽,从而暴露导电迹线; 切割晶片以分离传感器芯片; 将传感器芯片安装在具有多个基板的基板模块上,将导电迹线电连接到基板; 在衬底模块上和传感器芯片之间提供绝缘材料,以封装传感器芯片,但暴露透明介质; 以及切割所述基板模块以分离多个所得传感器半导体器件。