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31. 发明申请

US20110198281A1 Multi-Layer Three-Dimensional Structures Having Features Smaller Than a Minimum Feature Size Associated With the Formation of Individual Layers 审中-公开
标题翻译：具有小于单个层的形成的最小特征尺寸的特征的多层三维结构
公开(公告)号：US20110198281A1
公开(公告)日：2011-08-18
申请号：US13040500
申请日：2011-03-04
申请人： Michael S. Lockard , Adam L. Cohen , Vacit Arat , Dennis R. Smalley
发明人： Michael S. Lockard , Adam L. Cohen , Vacit Arat , Dennis R. Smalley
IPC分类号： B01D39/00 , C25D1/08 , B32B5/18
CPC分类号： C25D1/08 , B33Y70/00 , C25D1/003 , C25D5/022 , C25D5/10 , Y10T137/86759 , Y10T428/12361 , Y10T428/12479 , Y10T428/19 , Y10T428/24975 , Y10T428/249981 , Y10T428/29
摘要： Embodiments of multi-layer three-dimensional structures and formation methods provide structures with effective feature (e.g. opening) sizes (e.g. virtual gaps) that are smaller than a minimum feature size (MFS) that exists on each layer as a result of the formation method used in forming the structures. In some embodiments, multi-layer structures include a first element (e.g. first patterned layer with a gap) and a second element (e.g. second patterned layer with a gap) positioned adjacent the first element to define a third element (e.g. a net gap or opening resulting from the combined gaps of the first and second elements) where the first and second elements have features that are sized at least as large as the minimum feature size and the third element, at least in part, has dimensions or defines dimensions smaller than the minimum feature size.
摘要翻译：多层三维结构和形成方法的实施例提供结构，其具有小于作为形成方法的结果存在于每个层上的最小特征尺寸（MFS）的有效特征（例如开口）尺寸（例如，虚拟间隙）用于形成结构。在一些实施例中，多层结构包括第一元件（例如具有间隙的第一图案化层）和邻近第一元件定位的第二元件（例如具有间隙的第二图案化层），以限定第三元件（例如，净间隙或第一和第二元件的组合间隙产生的开口），其中第一和第二元件具有尺寸至少与最小特征尺寸一样大的特征，并且第三元件至少部分具有尺寸或尺寸小于最小特征尺寸。

32. 发明申请

US20100314258A1 Electrochemical Fabrication Processes Incorporating Non-Platable Metals and/or Metals that are Difficult to Plate On 审中-公开
标题翻译：掺入难以镀上的不可镀金属和/或金属的电化学制造工艺
公开(公告)号：US20100314258A1
公开(公告)日：2010-12-16
申请号：US12816914
申请日：2010-06-16
申请人： Adam L. Cohen , Michael S. Lockard , Gang Zhang
发明人： Adam L. Cohen , Michael S. Lockard , Gang Zhang
IPC分类号： C25D5/00
CPC分类号： C25D5/00 , B33Y10/00 , B81C99/0095 , B81C2201/0181 , C23C4/02 , C23C18/1605 , C23C18/1651 , C23C26/00 , C23C28/021 , C23C28/023 , C23C28/028 , C25D1/003
摘要： Embodiments are directed to electrochemically fabricating multi-layer three dimensional structures where each layer comprises at least one structural and at least one sacrificial material and wherein at least some metals or alloys are electrodeposited during the formation of some layers and at least some metals are deposited during the formation of some layers that are either difficult to electrodeposit and/or are difficult to electrodeposit onto. In some embodiments, the hard to electrodeposit metals (e.g. Ti, NiTi, W, Ta, Mo, etc.) may be deposited via chemical or physical vacuum deposition techniques while other techniques are used in other embodiments. In some embodiments, prior to electrodepositing metals, the surface of the previously formed layer is made to undergo appropriate preparation for receiving an electrodeposited material. Various surface preparation techniques are possible, including, for example, anodic activation, cathodic activation, and vacuum deposition of a seed layer and possibly an adhesion layer.
摘要翻译：实施例涉及电化学制造多层三维结构，其中每层包括至少一种结构和至少一种牺牲材料，并且其中至少一些金属或合金在形成一些层期间被电沉积，并且至少一些金属在形成难以电沉积和/或难以电沉积的一些层。在一些实施方案中，可以通过化学或物理真空沉积技术沉积难以电沉积的金属（例如Ti，NiTi，W，Ta，Mo等），而在其它实施方案中使用其它技术。在一些实施方案中，在电沉积金属之前，使先前形成的层的表面经历适当的准备以接收电沉积材料。各种表面处理技术是可能的，包括例如阳极活化，阴极活化和种子层以及可能的粘附层的真空沉积。

33. 发明申请

US20100314257A1 Methods of Reducing Interlayer Discontinuities in Electrochemically Fabricated Three-Dimensional Structures 审中-公开
标题翻译：减少电化学三维结构中层间不连续性的方法
公开(公告)号：US20100314257A1
公开(公告)日：2010-12-16
申请号：US12828283
申请日：2010-06-30
申请人： Adam L. Cohen , Michael S. Lockard , Dennis R. Smalley
发明人： Adam L. Cohen , Michael S. Lockard , Dennis R. Smalley
IPC分类号： C25D5/02
CPC分类号： C25D5/02 , B33Y10/00 , C23C18/1605 , C23C18/1651 , C25D1/003 , H01P11/006
摘要： Disclosed methods reduce the discontinuities that between individual layers of a structure that is formed at least in part using electrochemical fabrication techniques. Discontinuities may exist between layers of a structure as a result of up-facing or down-facing regions defined in data descriptive of the structure or they may exist as a result of building limitations, e.g., those that result in non-parallel orientation between a building axis and sidewall surfaces of layers. Methods for reducing discontinuities may be applied to all regions or only to selected regions of the structure. Methods may be tailored to improve the accuracy between an original design of the structure and the structure as fabricated or they may simply be used to smooth the discontinuities between layers. Methods may include deposition operations that selectively favor filling of the discontinuities and/or etching operations that selectively favor removal of material from protrusions that define discontinuities.
摘要翻译：公开的方法减少了使用电化学制造技术至少部分形成的结构的各个层之间的不连续性。结构的层之间可能存在不连续性，这是由于在描述结构的数据中定义的面向上或向下的区域的结果，或者它们可能由于构建限制而存在，例如导致在建筑轴线和层的侧壁表面。用于减少不连续性的方法可以应用于所有区域或仅应用于结构的选定区域。可以调整方法以提高结构的原始设计和所制造的结构之间的精度，或者可以简单地用于平滑层之间的不连续性。方法可以包括选择性地有利于填充不连续性和/或蚀刻操作的沉积操作，其选择性地有利于从限定不连续性的突起中去除材料。

34. 发明申请

US20100133109A1 Electrochemically Fabricated Hermetically Sealed Microstructures and Methods of and Apparatus for Producing Such Structures 审中-公开
标题翻译：电化学制造的密封微结构，以及用于生产这种结构的方法和装置
公开(公告)号：US20100133109A1
公开(公告)日：2010-06-03
申请号：US12624240
申请日：2009-11-23
申请人： Adam L. Cohen , Michael S. Lockard , Dennis R. Smalley , Vacit Arat , Christopher A. Bang , John C. Dixon
发明人： Adam L. Cohen , Michael S. Lockard , Dennis R. Smalley , Vacit Arat , Christopher A. Bang , John C. Dixon
IPC分类号： C25D5/02 , C25D5/48 , C25D7/00
CPC分类号： B81C1/00293 , B81B2201/042 , B81C1/00333 , B81C2201/0197 , B81C2203/0145 , C25D1/003 , G01P15/0802 , G01P15/125 , H01P1/202 , H01P3/06 , H01P5/183 , H01P11/00 , H01P11/005 , H05K3/4647
摘要： In some embodiments, multilayer structures are electrochemically fabricated from at least one structural material (e.g. nickel), at least one sacrificial material (e.g. copper), and at least one sealing material (e.g. solder). In some embodiments, the layered structure is made to have a desired configuration which is at least partially and immediately surrounded by sacrificial material which is in turn surrounded almost entirely by structural material. The surrounding structural material includes openings in the surface through which etchant can attack and remove trapped sacrificial material found within. Sealing material is located near the openings. After removal of the sacrificial material, the box is evacuated or filled with a desired gas or liquid. Thereafter, the sealing material is made to flow, seal the openings, and resolidify. In other embodiments, a post-layer formation lid or other enclosure completing structure is added.
摘要翻译：在一些实施例中，多层结构由至少一种结构材料（例如镍），至少一种牺牲材料（例如铜）和至少一种密封材料（例如焊料）进行电化学制造。在一些实施例中，层状结构被制成具有至少部分地且立即被牺牲材料包围的期望构型，牺牲材料又被几乎完全由结构材料包围。周围的结构材料包括在表面中的开口，蚀刻剂可以通过该开口攻击和去除在其内发现的被捕获的牺牲材料。密封材料位于开口附近。在除去牺牲材料之后，将盒子抽空或填充所需的气体或液体。此后，使密封材料流动，密封开口并重新固化。在其他实施例中，添加了后层形成盖或其它外壳完成结构。

35. 发明申请

US20100051466A1 Method of Forming Electrically Isolated Structures Using Thin Dielectric Coatings 审中-公开
标题翻译：使用薄介电涂层形成电隔离结构的方法
公开(公告)号：US20100051466A1
公开(公告)日：2010-03-04
申请号：US12506547
申请日：2009-07-21
申请人： Dennis R. Smalley , Adam L. Cohen , Ananda H. Kumar , Michael S. Lockard
发明人： Dennis R. Smalley , Adam L. Cohen , Ananda H. Kumar , Michael S. Lockard
IPC分类号： C25D1/20 , C25D5/10
CPC分类号： A61N1/00 , C23C18/1605 , C23C18/1651 , C25D1/003 , C25D1/20 , C25D5/022 , G01R1/0483 , G01R1/06716 , G01R1/07357 , G01R31/2886 , H05K3/467 , H05K3/4682
摘要： Electrochemical fabrication processes and apparatus for producing multi-layer structures where each layer includes the deposition of at least two materials and wherein the formation of at least some layers including operations for providing coatings of dielectric material that isolate at least portions of a first conductive material from (1) other portions of the first conductive material, (2) a second conductive material, or (3) another dielectric material, and wherein the thickness of the dielectric coatings are thin compared to the thicknesses of the layers used in forming the structures. In some preferred embodiments, portions of each individual layer are encapsulated by dielectric material while in other embodiments only boundaries between distinct regions of materials are isolated from one another by dielectric barriers.
摘要翻译：用于生产多层结构的电化学制造方法和装置，其中每个层包括至少两种材料的沉积，并且其中形成至少一些层，包括用于提供将第一导电材料的至少一部分与（1）第一导电材料的其它部分，（2）第二导电材料或（3）另一种电介质材料，并且其中电介质涂层的厚度与用于形成结构的层的厚度相比较薄。在一些优选实施例中，每个单独层的部分被电介质材料包封，而在其它实施例中，材料的不同区域之间的边界通过电介质屏障彼此隔离。

36. 发明申请

US20090015903A1 Complex Microdevices and Apparatus and Methods for Fabricating Such Devices 审中-公开
标题翻译：用于制造这种装置的复杂微型装置和装置及方法
公开(公告)号：US20090015903A1
公开(公告)日：2009-01-15
申请号：US12099976
申请日：2008-04-09
申请人： Christopher A. Bang , Adam L. Cohen , Michael S. Lockard , John D. Evans
发明人： Christopher A. Bang , Adam L. Cohen , Michael S. Lockard , John D. Evans
IPC分类号： G02B26/00 , C25D5/02
CPC分类号： H02N1/008 , B33Y10/00 , B81C1/0019 , C25D1/003
摘要： Various embodiments of the invention are directed to various microdevices including sensors, actuators, valves, scanning mirrors, accelerometers, switches, and the like. In some embodiments the devices are formed via electrochemical fabrication (EFAB®).
摘要翻译：本发明的各种实施例涉及包括传感器，致动器，阀，扫描反射镜，加速度计，开关等的各种微型装置。在一些实施例中，通过电化学制造（EFAB）形成器件。

37. 发明申请

US20080142369A1 Integrated Circuit Packaging Using Electrochemically Fabricated Structures 审中-公开
标题翻译：使用电化学结构的集成电路封装
公开(公告)号：US20080142369A1
公开(公告)日：2008-06-19
申请号：US11943536
申请日：2007-11-20
申请人： Adam L. Cohen , Vacit Arat , Michael S. Lockard
发明人： Adam L. Cohen , Vacit Arat , Michael S. Lockard
IPC分类号： C25D5/02
CPC分类号： C25D1/003 , C23C18/16 , C23C18/1605 , C23C18/1651 , C25D5/02 , C25D5/022 , C25D5/10 , H01L21/48 , H01L21/4857 , H01L21/50 , H01L24/16 , H01L2224/131 , H01L2224/16145 , H01L2224/16227 , H01L2224/73253 , H01L2924/00011 , H01L2924/00014 , H01L2924/1461 , H01L2924/15153 , H01L2924/15192 , H01L2924/15311 , H01L2924/15321 , H01L2224/0401 , H01L2924/014
摘要： Embodiments of the invention provide a package for holding an integrated circuit or other electronic component and/or a packaged integrated circuit or electronic component which is formed at least in part via an electrochemical fabrication process from a plurality of adhered layers of conductive and dielectric materials.
摘要翻译：本发明的实施例提供一种用于保持集成电路或其它电子部件和/或封装的集成电路或电子部件的封装，所述集成电路或电子部件至少部分地通过电化学制造工艺从多个粘附的导电和介电材料层形成。

38. 发明授权

US07185542B2 Complex microdevices and apparatus and methods for fabricating such devices 有权
标题翻译：复杂的微型装置以及用于制造这种装置的装置和方法
公开(公告)号：US07185542B2
公开(公告)日：2007-03-06
申请号：US10313795
申请日：2002-12-06
申请人： Christopher A. Bang , Adam L. Cohen , Michael S. Lockard , John D. Evans
发明人： Christopher A. Bang , Adam L. Cohen , Michael S. Lockard , John D. Evans
IPC分类号： G01P15/10 , G01P15/125
CPC分类号： B81C1/0019 , B33Y10/00
摘要： Various embodiments of the invention are directed to various microdevices including sensors, actuators, valves, scanning mirrors, accelerometers, switches, and the like. In some embodiments the devices are formed via electrochemical fabrication (EFAB™)
摘要翻译：本发明的各种实施例涉及包括传感器，致动器，阀，扫描反射镜，加速度计，开关等的各种微型装置。在一些实施例中，通过电化学制造（EFAB TM）形成器件，

39. 发明授权

US08512578B2 Multi-step release method for electrochemically fabricated structures 有权
标题翻译：电化学制造结构的多步释放方法
公开(公告)号：US08512578B2
公开(公告)日：2013-08-20
申请号：US12892734
申请日：2010-09-28
申请人： Adam L. Cohen , Michael S. Lockard , Dale S. McPherson
发明人： Adam L. Cohen , Michael S. Lockard , Dale S. McPherson
IPC分类号： C25D5/02 , B81C1/00
CPC分类号： C23C18/1689 , B33Y10/00 , B81C1/0019 , C23C18/1605 , C23C18/1651 , C25D1/003 , G03F7/00
摘要： Multi-layer structures are electrochemically fabricated from at least one structural material (e.g. nickel), that is configured to define a desired structure and which may be attached to a substrate, and from at least one sacrificial material (e.g. copper) that surrounds the desired structure. After structure formation, the sacrificial material is removed by a multi-stage etching operation. In some embodiments sacrificial material to be removed may be located within passages or the like on a substrate or within an add-on component. The multi-stage etching operations may be separated by intermediate post processing activities, they may be separated by cleaning operations, or barrier material removal operations, or the like. Barriers may be fixed in position by contact with structural material or with a substrate or they may be solely fixed in position by sacrificial material and are thus free to be removed after all retaining sacrificial material is etched.
摘要翻译：多层结构由至少一种结构材料（例如镍）进行电化学制造，其被构造成限定期望的结构并且可以附着到基底上，并且由至少一种围绕期望的材料的牺牲材料（例如铜）结构体。在结构形成之后，通过多级蚀刻操作去除牺牲材料。在一些实施例中，待移除的牺牲材料可以位于基底上或附加部件内的通道等内。多级蚀刻操作可以通过中间后处理活动来分离，它们可以通过清洁操作或阻隔材料去除操作等分开。障碍物可以通过与结构材料或基底接触而固定就位，或者它们可以通过牺牲材料单独固定在适当位置，并且因此在所有保留牺牲材料被蚀刻之后可以被自由地去除。

40. 发明申请

US20110080236A1 Miniature RF and Microwave Components and Methods for Fabricating Such Components 审中-公开
标题翻译：微型射频和微波元件及其制造方法
公开(公告)号：US20110080236A1
公开(公告)日：2011-04-07
申请号：US12899071
申请日：2010-10-06
申请人： Elliott R. Brown , John D. Evans , Christopher A. Bang , Adam L. Cohen , Michael S. Lockard , Dennis R. Smalley , Morton Grosser
发明人： Elliott R. Brown , John D. Evans , Christopher A. Bang , Adam L. Cohen , Michael S. Lockard , Dennis R. Smalley , Morton Grosser
IPC分类号： H01P1/207 , C25D5/02
CPC分类号： H01P1/202 , B33Y10/00 , B33Y70/00 , B81B2201/042 , C25D1/003 , G01P15/0802 , G01P15/125 , H01P3/06 , H01P5/183 , H01P11/00 , H01P11/005 , H01P11/007 , H05K3/4647 , Y10T29/49002 , Y10T29/49016 , Y10T29/49018
摘要： RF and microwave radiation directing or controlling components are provided that may be monolithic, that may be formed from a plurality of electrodeposition operations and/or from a plurality of deposited layers of material, that may include switches, inductors, antennae, transmission lines, filters, and/or other active or passive components. Components may include non-radiation-entry and non-radiation-exit channels that are useful in separating sacrificial materials from structural materials. Preferred formation processes use electrochemical fabrication techniques (e.g. including selective depositions, bulk depositions, etching operations and planarization operations) and post-deposition processes (e.g. selective etching operations and/or back filling operations).
摘要翻译：提供RF和微波辐射引导或控制部件，其可以是单片的，其可以由多个电沉积操作和/或从多个沉积的材料层形成，其可以包括开关，电感器，天线，传输线，滤波器，和/或其他主动或被动部件。部件可以包括用于将牺牲材料与结构材料分离的非辐射入口和非辐射出口通道。优选的形成方法使用电化学制造技术（例如包括选择性沉积，体积沉积，蚀刻操作和平坦化操作）和后沉积工艺（例如选择性蚀刻操作和/或反向填充操作）。

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