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31. 发明授权

US08921968B2 Selective emitter solar cells formed by a hybrid diffusion and ion implantation process 有权
标题翻译：通过混合扩散和离子注入工艺形成的选择性发射极太阳能电池
公开(公告)号：US08921968B2
公开(公告)日：2014-12-30
申请号：US13301372
申请日：2011-11-21
申请人： Ajeet Rohatgi , Vijay Yelundur , Preston Davis , Vinodh Chandrasekaran , Ben Damiani
发明人： Ajeet Rohatgi , Vijay Yelundur , Preston Davis , Vinodh Chandrasekaran , Ben Damiani
IPC分类号： H01L31/102 , H01L31/068 , H01L31/0236 , H01L21/266 , H01L21/263 , H01L31/18 , H01L21/265
CPC分类号： H01L31/1804 , H01L21/263 , H01L21/26513 , H01L21/266 , H01L31/02363 , H01L31/068 , Y02E10/547 , Y02P70/521
摘要： Solar cells and methods for their manufacture are disclosed. An example solar cell may comprise a substrate comprising a p-type base layer and an n-type selective emitter layer formed over the p-type base layer. The n-type selective emitter layer may comprise one or more first doped regions comprising implanted dopant and one or more second doped regions comprising diffused dopant. The one or more first doped regions may be more heavily doped than the one or more second doped regions. A p-n junction may be formed at the interface of the base layer and the selective emitter layer, such that the p-n junction and the selective emitter layer are both formed during a single anneal cycle.
摘要翻译：公开了太阳能电池及其制造方法。示例性的太阳能电池可以包括在p型基底层上形成的p型基极层和n型选择性发射极层的衬底。 n型选择性发射极层可以包括一个或多个包含注入掺杂剂的第一掺杂区域和包含扩散掺杂剂的一个或多个第二掺杂区域。一个或多个第一掺杂区域可以比一个或多个第二掺杂区域更重掺杂。可以在基极层和选择性发射极层的界面处形成p-n结，使得在单个退火循环期间都形成p-n结和选择性发射极层。

32. 发明授权

US07790574B2 Boron diffusion in silicon devices 有权
标题翻译：硅器件中的硼扩散
公开(公告)号：US07790574B2
公开(公告)日：2010-09-07
申请号：US11301527
申请日：2005-12-13
申请人： Ajeet Rohatgi , Dong Seop Kim , Kenta Nakayashiki , Brian Rounsaville
发明人： Ajeet Rohatgi , Dong Seop Kim , Kenta Nakayashiki , Brian Rounsaville
IPC分类号： H01L21/00
CPC分类号： H01L21/2255 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： Disclosed are various embodiments that include a process, an arrangement, and an apparatus for boron diffusion in a wafer. In one representative embodiment, a process is provided in which a boric oxide solution is applied to a surface of the wafer. Thereafter, the wafer is subjected to a fast heat ramp-up associated with a first heating cycle that results in a release of an amount of boron for diffusion into the wafer.
摘要翻译：公开了包括在晶片中硼扩散的工艺，布置和装置的各种实施例。在一个代表性实施例中，提供了一种方法，其中将硼氧化物溶液施加到晶片的表面。此后，晶片经受与第一加热循环相关联的快速加热斜坡，其导致一定量的硼的释放以扩散到晶片中。

33. 发明申请

US20090215218A1 METHOD FOR MAKING SOLAR CELL HAVING CRYSTALLINE SILICON P-N HOMOJUNCTION AND AMORPHOUS SILICON HETEROJUNCTIONS FOR SURFACE PASSIVATION 有权
标题翻译：用于制造具有结晶硅P-N HOMOJUNCTION的太阳能电池和用于表面钝化的非晶硅异质子的方法
公开(公告)号：US20090215218A1
公开(公告)日：2009-08-27
申请号：US12036829
申请日：2008-02-25
申请人： Daniel L. Meier , Ajeet Rohatgi
发明人： Daniel L. Meier , Ajeet Rohatgi
IPC分类号： H01L21/00
CPC分类号： H01L31/0745 , H01L31/068 , H01L31/0747 , H01L31/078 , H01L31/202 , Y02E10/547 , Y02P70/521
摘要： A thin silicon solar cell is described. Specifically, the solar cell may be fabricated from a crystalline silicon wafer having a thickness of approximately 50 micrometers to 500 micrometers. The solar cell comprises a first region having a p-n homojunction, a second region that creates heterojunction surface passivation, and a third region that creates heterojunction surface passivation. Amorphous silicon layers are deposited on both sides of the silicon wafer at temperatures below approximately 400 degrees Celsius to reduce the loss of passivation properties of the amorphous silicon. A final layer of transparent conductive oxide is formed on both sides at approximately 165 degrees Celsius. Metal contacts are applied to the transparent conductive oxide. The low temperatures and very thin material layers used to fabricate the outer layers of used to fabricate the outer layers of the solar cell protect the thin wafer from excessive stress that may lead to deforming the wafer.
摘要翻译：描述了薄硅太阳能电池。具体地，太阳能电池可以由厚度约为50微米至500微米的晶体硅晶片制成。太阳能电池包括具有p-n同质结的第一区域，产生异质结表面钝化的第二区域和产生异质结表面钝化的第三区域。非晶硅层在低于约400摄氏度的温度下沉积在硅晶片的两侧，以减少非晶硅的钝化性能的损失。在大约165摄氏度的两侧形成最终的透明导电氧化物层。将金属触点施加到透明导电氧化物上。用于制造用于制造太阳能电池的外层的外层的低温和非常薄的材料层保护薄晶片免受可能导致晶片变形的过大应力。

34. 发明申请

US20090211623A1 SOLAR MODULE WITH SOLAR CELL HAVING CRYSTALLINE SILICON P-N HOMOJUNCTION AND AMORPHOUS SILICON HETEROJUNCTIONS FOR SURFACE PASSIVATION 审中-公开
标题翻译：带太阳能电池的太阳能电池，具有结晶硅P-N HOMOJUNCTION和表面钝化的非晶硅异质结
公开(公告)号：US20090211623A1
公开(公告)日：2009-08-27
申请号：US12036839
申请日：2008-02-25
申请人： Daniel L. Meier , Ajeet Rohatgi
发明人： Daniel L. Meier , Ajeet Rohatgi
IPC分类号： H01L31/042
CPC分类号： H01L31/068 , H01L31/048 , H01L31/0547 , H01L31/0745 , H01L31/0747 , H01L31/078 , H01L31/202 , H02S40/22 , Y02E10/52 , Y02E10/547 , Y02P70/521
摘要： A thin silicon solar cell is described. Specifically, the solar cell may be fabricated from a crystalline silicon wafer having a thickness of approximately 50 micrometers to 500 micrometers. The solar cell comprises a first region having a p-n homojunction, a second region that creates heterojunction surface passivation, and a third region that creates heterojunction surface passivation. Amorphous silicon layers are deposited on both sides of the silicon wafer at temperatures below approximately 400 degrees Celsius to reduce the loss of passivation properties of the amorphous silicon. A final layer of transparent conductive oxide is formed on both sides at approximately 165 degrees Celsius. Metal contacts are applied to the transparent conductive oxide. The low temperatures and very thin material layers used to fabricate the outer layers of used to fabricate the outer layers of the solar cell protect the thin wafer from excessive stress that may lead to deforming the wafer.
摘要翻译：描述了薄硅太阳能电池。具体地，太阳能电池可以由厚度约为50微米至500微米的晶体硅晶片制成。太阳能电池包括具有p-n同质结的第一区域，产生异质结表面钝化的第二区域和产生异质结表面钝化的第三区域。非晶硅层在低于约400摄氏度的温度下沉积在硅晶片的两侧，以减少非晶硅的钝化性能的损失。在大约165摄氏度的两侧形成最终的透明导电氧化物层。将金属触点施加到透明导电氧化物上。用于制造用于制造太阳能电池的外层的外层的低温和非常薄的材料层保护薄晶片免受可能导致晶片变形的过大应力。

35. 发明申请

US20090025786A1 SOLAR CELL HAVING HIGH QUALITY BACK CONTACT WITH SCREEN-PRINTED LOCAL BACK SURFACE FIELD 审中-公开
标题翻译：具有高质量背景的太阳能电池与屏幕打印的本地背面表面接触
公开(公告)号：US20090025786A1
公开(公告)日：2009-01-29
申请号：US12116115
申请日：2008-05-06
申请人： Ajeet Rohatgi , Vichai Meemongkolkiat
发明人： Ajeet Rohatgi , Vichai Meemongkolkiat
IPC分类号： H01L31/00
CPC分类号： H01L31/068 , H01L31/022425 , H01L31/1804 , H01L31/1868 , Y02E10/547 , Y02P70/521
摘要： A thin silicon solar cell having a back dielectric passivation and rear contact with local back surface field is described. Specifically, the solar cell may be fabricated from a crystalline silicon wafer having a thickness from 50 to 500 micrometers. A barrier layer and a dielectric layer are applied at least to the back surface of the silicon wafer to protect the silicon wafer from deformation when the rear contact is formed. At least one opening is made to the dielectric layer. An aluminum contact that provides a back surface field is formed in the opening and on the dielectric layer. The aluminum contact may be applied by screen printing an aluminum paste having from one to 12 atomic percent silicon and then applying a heat treatment at 750 degrees Celsius.
摘要翻译：描述具有背电介质钝化和与局部背表面场的后接触的薄硅太阳能电池。具体地，太阳能电池可以由厚度为50至500微米的晶体硅晶片制造。阻挡层和电介质层至少施加到硅晶片的背面，以在形成后接触时保护硅晶片免受变形。至少一个开口被制成电介质层。在开口和电介质层上形成提供背面场的铝触点。铝接触可以通过丝网印刷施加1至12原子％硅的铝浆，然后在750摄氏度下进行热处理。

36. 发明申请

US20090007965A1 SOLAR CELL DEVICE HAVING AMORPHOUS SILICON LAYERS 审中-公开
标题翻译：具有非晶硅层的太阳能电池装置
公开(公告)号：US20090007965A1
公开(公告)日：2009-01-08
申请号：US12138165
申请日：2008-06-12
申请人： Ajeet Rohatgi , Abasifreke Ebong , Vijay Yelundur
发明人： Ajeet Rohatgi , Abasifreke Ebong , Vijay Yelundur
IPC分类号： H01L31/0376
CPC分类号： H01L31/0288 , H01L31/068 , H01L31/075 , H01L31/1804 , Y02E10/547 , Y02E10/548 , Y02P70/521
摘要： Devices, solar cell structures, and methods of fabrication thereof, are disclosed.
摘要翻译：公开了装置，太阳能电池结构及其制造方法。

37. 发明申请

US20080241986A1 METHOD FOR FABRICATING A SILICON SOLAR CELL STRUCTURE HAVING AMORPHOUS SILICON LAYERS 审中-公开
标题翻译：用于制造具有非晶硅层的硅太阳能电池结构的方法
公开(公告)号：US20080241986A1
公开(公告)日：2008-10-02
申请号：US12138105
申请日：2008-06-12
申请人： Ajeet Rohatgi , Abasifreke Ebong , Vijay Yelundur
发明人： Ajeet Rohatgi , Abasifreke Ebong , Vijay Yelundur
IPC分类号： H01L31/18
CPC分类号： H01L31/0288 , H01L31/068 , H01L31/075 , H01L31/1804 , Y02E10/547 , Y02E10/548 , Y02P70/521
摘要： Devices, solar cell structures, and methods of fabrication thereof, are disclosed.
摘要翻译：公开了装置，太阳能电池结构及其制造方法。

38. 发明授权

US5521839A Deep level transient spectroscopy (DLTS) system and method 失效
标题翻译：深层瞬态光谱（DLTS）系统和方法
公开(公告)号：US5521839A
公开(公告)日：1996-05-28
申请号：US116111
申请日：1993-09-02
申请人： William A. Doolittle , Ajeet Rohatgi
发明人： William A. Doolittle , Ajeet Rohatgi
IPC分类号： G01R31/312 , G01N27/02
CPC分类号： G01R31/312
摘要： A computer-based deep level transient spectroscopy (DLTS) system (10) efficiently digitizes and analyzes capacitance and conductance transients acquired from a test material (13) by conventional DLTS methods as well as by several transient methods, including a covariance method of linear predictive modeling. A unique pseudo-logarithmic data storage scheme allows each transient to be tested at more than eleven different rates, permitting three to five decades of time constants .tau. to be observed during each thermal scan, thereby allowing high resolution of closely spaced defect energy levels. The system (10) comprises a sensor (12) for detecting capacitance and/or conductance transients, a digitizing mechanism (14) for digitizing the capacitance and/or conductance transients, preamplifiers (16a, 16b) for filtering, amplifying, and for forwarding the transients to the digitizing mechanism (14), a pulse generator (18) for supplying a filling pulse to the test material (13) in a cryostat (24), a trigger conditioner for coordinating the timing between the digitizing mechanism (14) and the pulse generator (18), and a temperature controller (26) for changing the temperature of the cryostat (24).
摘要翻译：基于计算机的深层瞬态光谱（DLTS）系统（10）有效地数字化并分析了通过常规DLTS方法从测试材料（13）获得的电容和电导瞬态，以及通过几种瞬态方法，包括线性预测的协方差方法造型。独特的伪对数数据存储方案允许以超过十一种不同的速率测试每个瞬态，允许在每次热扫描期间观察三到五十年的时间常数τ，从而允许紧密间隔的缺陷能级的高分辨率。系统（10）包括用于检测电容和/或电导瞬变的传感器（12），用于数字化电容和/或电导瞬变的数字化机构（14），用于过滤，放大和转发的前置放大器（16a，16b）数字化机构（14）的瞬变，用于向低温恒温器（24）中的测试材料（13）提供填充脉冲的脉冲发生器（18），用于协调数字化机构（14）和脉冲发生器（18）和用于改变低温恒温器（24）的温度的温度控制器（26）。

39. 发明授权

US5495170A Time varying electrical conductivity tester using frequency discrimination and power detector and methods thereof 失效
标题翻译：使用鉴频器和功率检测器的时变电导率测试仪及其方法
公开(公告)号：US5495170A
公开(公告)日：1996-02-27
申请号：US218805
申请日：1994-03-28
申请人： Robert K. Feeney , Ajeet Rohatgi , David R. Hertling
发明人： Robert K. Feeney , Ajeet Rohatgi , David R. Hertling
IPC分类号： G01N27/02 , G01R27/02 , G01R31/26 , G01N27/72 , G01R27/28 , G01R33/12
CPC分类号： G01N27/023 , G01R27/02 , G01R31/2648
摘要： An electrical conductivity tester accurately measures the time-varying electrical conductivity .sigma.(t) and steady-state electrical conductivity .sigma..sub.ss, of a test material. In a first embodiment, the transmission phase of a probe circuit is monitored to determine the conductivity of a test material. In the first embodiment, an oscillator circuit generates a reference oscillator signal. A probe circuit receives the reference oscillator signal, magnetically couples to the test material, and modifies the reference oscillator signal via electromagnetic induction to derive a modified transmission phase signal. Finally, a phase detector circuit derives a transmission phase signal by combining the reference oscillator signal and the modified transmission phase signal, the transmission phase signal being directly convertible to the conductivity. In a second embodiment, an amplifier is connected to the probe circuit to form an oscillator circuit. The oscillator circuit generates an oscillator signal in response to the magnetic coupling of the probe circuit with the test material. A frequency discriminator generates a frequency signal from the oscillator signal, the frequency signal being convertible to the conductivity.
摘要翻译：电导率测试仪精确测量测试材料的时变电导率σ（t）和稳态电导率σss。在第一实施例中，监测探针电路的透射相以确定测试材料的导电性。在第一实施例中，振荡器电路产生参考振荡器信号。探头电路接收参考振荡器信号，磁耦合到测试材料，并通过电磁感应修改参考振荡器信号，以导出修正的传输相位信号。最后，相位检测器电路通过组合基准振荡器信号和经修改的传输相位信号来获得传输相位信号，传输相位信号可直接转换为导电性。在第二实施例中，放大器连接到探针电路以形成振荡器电路。振荡器电路响应于探针电路与测试材料的磁耦合而产生振荡器信号。频率鉴频器从振荡器信号产生频率信号，频率信号可转换为电导率。

40. 发明授权

US5418019A Method for low temperature plasma enhanced chemical vapor deposition (PECVD) of an oxide and nitride antireflection coating on silicon 失效
标题翻译：硅上氧化物和氮化物抗反射涂层的低温等离子体增强化学气相沉积（PECVD）方法
公开(公告)号：US5418019A
公开(公告)日：1995-05-23
申请号：US248473
申请日：1994-05-25
申请人： Zhizhang Chen , Ajeet Rohatgi
发明人： Zhizhang Chen , Ajeet Rohatgi
IPC分类号： C23C16/34 , C23C16/40 , C23C16/56 , G02B1/11 , B05D3/06 , G02B5/26
CPC分类号： H01L31/02168 , C23C16/345 , C23C16/402 , C23C16/56 , G02B1/115 , Y02E10/50
摘要： A sequential plasma-enhanced chemical vapor deposition (PECVD) of SiN and SiO.sub.x produces a very effective double-layer antireflection coating. This antireflection coating is compared with the frequently used and highly efficient double-layer MgF.sub.2 /ZnS coating. It is shown that the double-layer SiO.sub.x /SiN coating improves the short-circuited current (J.sub.sc) by 47%, open-circuit voltage (V.sub.oc) by 3.7%, and efficiency (Eff) by 55% for silicon cells with oxide surface passivation. The counterpart MgF.sub.2 /ZnS coating gives smaller improvement in V.sub.oc and Eff. However, if silicon cells do not have the oxide passivation, the PECVD SiO.sub.x /SiN gives much greater improvement in the cell parameters, 57% in J.sub.sc, 8% in V.sub.oc, and 66% in efficiency, compared to the MgF.sub.2 /ZnS coating which improves J.sub.sc by 50%, V.sub.oc by 2%, and cell efficiency by 54%. This significant additional improvement results from the PECVD deposition-induced surface/defect passivation. The internal quantum efficiency (IQE) measurements showed that the PECVD SiO.sub.x /SiN coating absorbs fair amount of photons in the short-wavelength range (
摘要翻译： SiN和SiOx的顺序等离子体增强化学气相沉积（PECVD）产生非常有效的双层抗反射涂层。将该抗反射涂层与经常使用且高效的双层MgF2 / ZnS涂层进行比较。显示双层SiOx / SiN涂层将氧化物表面的硅电池的短路电流（Jsc）提高了47％，开路电压（Voc）提高了3.7％，效率（Eff）提高了55％钝化。对应的MgF2 / ZnS涂层在Voc和Eff方面提供较小的改进。然而，如果硅电池不具有氧化物钝化，则与MgF 2 / ZnS涂层相比，PECVD SiO x / SiN在电池参数方面提供了更大的改进，在Jsc中为57％，Voc为8％，效率为66％将Jsc提高50％，Voc提高2％，电池效率提高54％。这种显着的附加改进来自于PECVD沉积诱导的表面/缺陷钝化。内部量子效率（IQE）测量表明，PECVD SiOx / SiN涂层在短波长范围（<500 nm）吸收了相当数量的光子，然而，改进的表面/缺陷钝化比补偿Jsc和与MgF2 / ZnS涂层相比，电池效率提高了很多。

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