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31. 发明授权

US5247592A Semiconductor optical device and array of the same 失效
标题翻译：半导体光学器件及其阵列相同
公开(公告)号：US5247592A
公开(公告)日：1993-09-21
申请号：US892782
申请日：1992-06-03
申请人： Hiroaki Inoue , Kazuhisa Uomi , Koji Ishida
发明人： Hiroaki Inoue , Kazuhisa Uomi , Koji Ishida
IPC分类号： G02F1/313 , H01S5/50 , H04Q11/00
CPC分类号： G02F1/3138 , H01S5/50 , H04Q11/0005 , H04Q2011/0015 , H04Q2011/0041 , H04Q2011/0052
摘要： A semiconductor optical device and an optical device array is provided which can be used in an optical logic circuit, photonic switching OEIC, etc. The device includes a light amplifying arrangement provided on a bypass waveguide that connects a plurality of optical waveguides, thereby enabling improvement of the light crosstalk and the light propagation loss. In particular, by virtue of providing a light amplifying means in addition to the light deflecting portion, noise components are not amplified, and, therefore, the SN ratio is markedly increased.
摘要翻译：提供了可用于光逻辑电路，光子开关OEIC等的半导体光学器件和光学器件阵列。该器件包括设置在连接多个光波导的旁路波导上的光放大装置，从而能够改善的光串扰和光传播损耗。特别地，除了光偏转部分之外还提供光放大装置，噪声分量不被放大，因此，SN比显着增加。

32. 发明授权

US5136601A Semiconductor laser 失效
标题翻译：半导体激光器
公开(公告)号：US5136601A
公开(公告)日：1992-08-04
申请号：US379672
申请日：1989-07-13
申请人： Takashi Kajimura , Naoki Chinone , Yuichi Ono , Shinichi Nakatsuka , Kazuhisa Uomi , Toshihiro Kawano , Tsukuru Ohtoshi , Yasutoshi Kashiwada
发明人： Takashi Kajimura , Naoki Chinone , Yuichi Ono , Shinichi Nakatsuka , Kazuhisa Uomi , Toshihiro Kawano , Tsukuru Ohtoshi , Yasutoshi Kashiwada
IPC分类号： H01S5/10 , H01S5/227
CPC分类号： H01S5/10 , H01S5/227 , H01S5/1064 , H01S5/2275
摘要： A semiconductor laser having a stripe-like lasing region, wherein the structure of the lasing region such as the mechanism of optical guiding of the lateral mode control structure is made different between the central portion in the lasing region and portions close to facets, in order to reduce optical feedback induced noise and astigmatism, and to facilitate the manufacture thereof.
摘要翻译：一种具有条状激光区域的半导体激光器，其中激光区域的结构（例如横向模式控制结构的光引导机构）在激光区域的中心部分和靠近刻面的部分之间按顺序以减少光学反馈引起的噪声和散光，并促进其制造。

33. 发明授权

US5044745A Semiconductor optical switch and array of the same 失效
标题翻译：半导体光开关和阵列相同
公开(公告)号：US5044745A
公开(公告)日：1991-09-03
申请号：US464192
申请日：1990-01-12
申请人： Hiroaki Inoue , Kazuhisa Uomi , Koji Ishida
发明人： Hiroaki Inoue , Kazuhisa Uomi , Koji Ishida
IPC分类号： G02F1/313 , G02F1/35 , H01S5/50 , H04Q11/00
CPC分类号： G02F1/3138 , H01S5/50 , H04Q11/0005 , H04Q2011/0015 , H04Q2011/0041 , H04Q2011/0052
摘要： A semiconductor optical device and an optical device array is provided which can be used in an optical logic circuit, photonic switching OEIC, etc. The device includes a light amplifying arrangement provided on a bypass waveguide that connects a plurality of optical waveguides, thereby enabling improvement of the light crosstalk and the light propagation loss. In particular, by virtue of providing a light amplifying means in addition to the light deflecting portion, noise components are not amplified, and, therefore, the SN ratio is markedly increased.

34. 发明授权

US4881238A Semiconductor laser having quantum well active region doped with impurities 失效
标题翻译：具有掺杂有杂质的量子阱活性区的半导体激光器
公开(公告)号：US4881238A
公开(公告)日：1989-11-14
申请号：US888073
申请日：1986-07-22
申请人： Naoki Chinone , Kazuhisa Uomi , Tadashi Fukuzawa , Hideaki Matsueda , Takashi Kajimura
发明人： Naoki Chinone , Kazuhisa Uomi , Tadashi Fukuzawa , Hideaki Matsueda , Takashi Kajimura
IPC分类号： H01S5/227 , H01S5/30 , H01S5/34
CPC分类号： B82Y20/00 , H01S5/34 , H01S5/2275 , H01S5/3086 , H01S5/309 , H01S5/3407
摘要： In a well-known semiconductor laser, a multiple quantum well type active layer consisting of barrier layers and active layers or well layers, each of which has a thickness less than the de Broglie wavelength of electrons, is doped with an impurity, and the impurity density is made higher in the barrier layer than in the well layer. Further, in a case where the multiple quantum well active layer is held between p-type and n-type cladding layers, the well layer is undoped, the part of the barrier layer lying in contact with the well layer is undoped, and the other part of the barrier layer close to the p-type cladding layer is put into the n-conductivity type while that of the barrier layer close to the n-type cladding layer is put into the p-conductivity type.
摘要翻译：在众所周知的半导体激光器中，掺杂有杂质的由势垒层和活性层或阱层构成的多量子阱型有源层的厚度小于电子的德布罗意波长，在阻挡层中的密度比井层中的密度高。此外，在多量子阱活性层保持在p型和n型覆层之间的情况下，阱层未掺杂，阻挡层与阱层接触的部分未掺杂，另一方面靠近p型覆层的阻挡层的一部分被放入n导电型，而靠近n型包覆层的阻挡层的部分被放入p导电型。

35. 发明授权

US4797891A Semiconductor laser 失效
标题翻译：半导体激光器
公开(公告)号：US4797891A
公开(公告)日：1989-01-10
申请号：US941842
申请日：1986-12-15
申请人： Kazuhisa Uomi , Misuzu Yoshizawa , Yuichi Ono , Naoki Chinone , Takashi Kajimura
发明人： Kazuhisa Uomi , Misuzu Yoshizawa , Yuichi Ono , Naoki Chinone , Takashi Kajimura
IPC分类号： H01S5/00 , H01S5/042 , H01S5/06 , H01S5/062 , H01S5/40 , H01S3/19
CPC分类号： H01S5/4031 , H01S5/06243 , H01S5/4075
摘要： The present invention relates to phased-array semiconductor lasers having a radiation angle turnable by oscillating independently and stably between the fundamental supermode and the higher order supermode and switching the radiation angles by utilizing the property that their radiation angles are different.Optical switching and optical scanning, that have been difficult in the prior art, can be made more easily by use of a semiconductor laser having a turnable radiation angle.The objection of the present invention can be accomplished by disposing separate electrodes at the emission stripes and at the gap between the stripes in the phased-array semiconductor laser.Further, the present invention may be accomplished by dividing at least one stripe electrode in order to form electrode regions. When the current is applied to all the electrodes, oscillation occurs in the highest order mode and the beam is emitted in another direction. When the current is applied to only the electrode exclusive of the electrode regions, oscillation occurs in the fundamental mode and the beam is emitted in a direction vertical to a facet.Moreover, the present invention may be accomplished by disposing electrodes outside the stripe regions of the phased-array semiconductor laser so that oscillation occurs in the fundamental supermode when the electric field is applied to the electrodes and in the higher order mode when the electric field is not applied.
摘要翻译：本发明涉及通过利用其辐射角不同的性质，通过在基本超模和高阶超模之间独立且稳定地振荡而切换辐射角的相位阵列半导体激光器。通过使用具有可转动的辐射角的半导体激光器，可以更容易地使现有技术中难以进行的光学切换和光学扫描。本发明的反对可以通过在相控阵半导体激光器中的发射条和条之间的间隙设置分开的电极来实现。此外，本发明可以通过划分至少一个条状电极来形成电极区域来实现。当电流施加到所有电极时，在最高阶模式下发生振荡，并且光束在另一个方向上发射。当只将电流施加到不包括电极区域的电极时，基本模式发生振荡，并且在垂直于小面的方向上发射光束。此外，本发明可以通过将电极设置在相控阵半导体激光器的条纹区域之外来实现，使得当电场施加到电极时在基本超模中发生振荡，并且当电场为没有申请。

36. 发明授权

US4752934A Multi quantum well laser with parallel injection 失效
标题翻译：多量子阱激光器并行注入
公开(公告)号：US4752934A
公开(公告)日：1988-06-21
申请号：US898199
申请日：1986-08-20
申请人： Tadashi Fukuzawa , Naoki Chinone , Kazuhisa Uomi , Takashi Kajimura
发明人： Tadashi Fukuzawa , Naoki Chinone , Kazuhisa Uomi , Takashi Kajimura
IPC分类号： H01S5/00 , H01S3/00 , H01S5/02 , H01S5/042 , H01S5/20 , H01S5/343 , H01S3/19
CPC分类号： B82Y20/00 , H01S5/0424 , H01S5/20 , H01S5/0208 , H01S5/2059 , H01S5/3432
摘要： A semiconductor laser having such a structure that a laser structure including a laser active region of multi quantum well structure, cladding layers and a cap layer is formed on a substrate, is disclosed in which both end regions of the laser active region in the quantum well layer is converted into mixed crystal by impurity induced intermixing so that a multi quantum well active region is sandwiched between mixed crystal regions, and impurity diffused regions are formed between the surface of the crystal and the mixed crystal regions, to form a current path and to inject carriers into the multi quantum well region in a direction parallel to the laser active layer. Thus, the semiconductor laser can modulate laser oscillation at a very high frequency, and moreover is readily fabricated or integrated.
摘要翻译：公开了一种半导体激光器，其具有在基板上形成包括多量子阱结构的激光有源区域，包层和盖层的激光结构的结构，其中量子阱中的激光有源区的两个端部区域通过杂质诱导的混合将层转换为混晶，使得多量子阱有源区夹在混晶区之间，并且在晶体表面和混晶区之间形成杂质扩散区，形成电流路径，在平行于激光有源层的方向上将载流子注入多量子阱区域。因此，半导体激光器可以以非常高的频率调制激光振荡，并且还容易地制造或集成。

37. 发明授权

US4752933A Semiconductor laser 失效
标题翻译：半导体激光器
公开(公告)号：US4752933A
公开(公告)日：1988-06-21
申请号：US817038
申请日：1986-01-08
申请人： Kazuhisa Uomi , Shinichi Nakatsuka , Takashi Kajimura , Yuichi Ono , Naoki Chinone
发明人： Kazuhisa Uomi , Shinichi Nakatsuka , Takashi Kajimura , Yuichi Ono , Naoki Chinone
IPC分类号： H01S5/00 , H01S5/12 , H01S5/20 , H01S5/223 , H01S5/34 , H01S3/19 , H01L27/12 , H01L45/00 , H01S3/08
CPC分类号： H01S5/20 , H01S5/12 , H01S5/2059 , H01S5/2232 , H01S5/3428
摘要： A semiconductor laser which has a super lattice layer between a substrate and a light confinement layer, and in which a portion of the super lattice layer other than a portion corresponding to the radiation region of an active layer is disordered to block the electric current. The disordering is effected in a self-aligned manner to simplify the manufacturing process. Therefore, and element which oscillates and maintains a fundamental transverse mode is obtained with a good yield.
摘要翻译：一种半导体激光器，其在基板和光限制层之间具有超晶格层，并且其中除了与有源层的辐射区域对应的部分之外的超晶格层的一部分无序以阻挡电流。无序化以自对准的方式进行，以简化制造过程。因此，以良好的产率获得振荡并保持基本横向模式的元件。

38. 发明授权

US5937274A Fabrication method for AlGaIn NPAsSb based devices 失效
标题翻译：基于AlGaIn NPAsSb的器件的制造方法
公开(公告)号：US5937274A
公开(公告)日：1999-08-10
申请号：US993035
申请日：1997-12-18
申请人： Masahiko Kondow , Kazuhisa Uomi , Hitoshi Nakamura
发明人： Masahiko Kondow , Kazuhisa Uomi , Hitoshi Nakamura
IPC分类号： H01L21/20 , H01L27/06 , H01L27/144 , H01L31/0232 , H01L31/0304 , H01L33/00 , H01L33/30 , H01S5/02 , H01S5/323 , H01S5/343
CPC分类号： H01L33/30 , B82Y20/00 , H01L21/02381 , H01L21/02392 , H01L21/02458 , H01L21/02461 , H01L21/02507 , H01L21/02538 , H01L21/0262 , H01L27/0605 , H01L27/1446 , H01L31/03048 , H01L31/107 , H01L31/125 , H01L33/007 , H01L27/15 , H01S5/021 , H01S5/32366 , H01S5/32375 , H01S5/3434 , Y02E10/544
摘要： A fabrication process for a semiconductor device including a plurality of semiconductor layers, the plurality of semiconductor layers including at least a nitrogen-containing alloy semiconductor Al.sub.a Ga.sub.b In.sub.1-a-b N.sub.x P.sub.y As.sub.z Sb.sub.1-x-y-z (0.ltoreq.a.ltoreq.1, 0.ltoreq.b.ltoreq.1, 0
摘要翻译：一种包括多个半导体层的半导体器件的制造方法，所述多个半导体层至少包括含氮合金半导体AlaGabIn1-a-bNxPyAszSb1-xyz（0≤a≤1,0≤ 以及制造半导体器件和装置的方法。对于多个半导体层中的至少两个半导体层，所述至少两个半导体层的晶格应变值设定为小于在所述两个相邻半导体层之间的界面处产生失配位错的临界应变。在制造半导体器件的方法中，制备作为材料的Al，Ga，In，N，P，As和Sb作为半导体器件的材料，并且通过使用所述材料外延生长多个半导体层，所述材料包括层的含氮合金半导体AlaGabIn1-a-bNxPyAszSb1-xyz（0≤a≤1,0

39. 发明授权

US5132981A Semiconductor optical device 失效
标题翻译：半导体光学器件
公开(公告)号：US5132981A
公开(公告)日：1992-07-21
申请号：US529245
申请日：1990-05-25
申请人： Kazuhisa Uomi , Shinji Sasaki , Tomonobu Tsuchiya , Naoki Chinone , Tsukuru Ohtoshi
发明人： Kazuhisa Uomi , Shinji Sasaki , Tomonobu Tsuchiya , Naoki Chinone , Tsukuru Ohtoshi
IPC分类号： G02F1/017 , H01L31/0352 , H01L33/06 , H01S5/062 , H01S5/12 , H01S5/125 , H01S5/20 , H01S5/227 , H01S5/32 , H01S5/34 , H01S5/343
CPC分类号： H01S5/34 , B82Y20/00 , G02F1/017 , H01L31/035236 , H01L33/06 , H01S5/0622 , H01S5/227 , H01S5/32 , G02F1/01708 , H01S5/06213 , H01S5/12 , H01S5/125 , H01S5/2004 , H01S5/2009 , H01S5/2275 , H01S5/3211 , H01S5/3403 , H01S5/3406 , H01S5/3407 , H01S5/34306 , H01S5/34313 , H01S5/3434
摘要： A semiconductor optical device having a region in which semiconductor or carriers in the semiconductor and light are interact, for example, an active region for a semiconductor laser, an optical wave guide region of an optical modulator, etc., includes a quantum well structure having a well region and a barrier region. The semiconductor optical device is remarkably improved with the degree of design freedom as it relates to parameters such as thickness and selection of material without deteriorating the quantum effect, by introducing a super lattice super-layer structure into the barrier region of the quantum well structure or defining the strain for the well region and the barrier region.

40. 发明授权

US4811354A Semiconductor laser 失效
标题翻译：半导体激光器
公开(公告)号：US4811354A
公开(公告)日：1989-03-07
申请号：US895843
申请日：1986-08-12
申请人： Kazuhisa Uomi , Naoki Chinone , Misuzu Yoshizawa , Shin'ichi Nakatsuka , Takashi Kajimura , Yuichi Ono
发明人： Kazuhisa Uomi , Naoki Chinone , Misuzu Yoshizawa , Shin'ichi Nakatsuka , Takashi Kajimura , Yuichi Ono
IPC分类号： H01S5/10 , H01S5/343 , H01S5/40 , H01S3/19
CPC分类号： B82Y20/00 , H01S5/4031 , H01S5/10 , H01S5/1032 , H01S5/3432
摘要： A phased array semiconductor laser has two or more luminous stripes. The number, width or center to center spacing of stripes is made different between the center region and neighborhood of facets of the laser so that the laser may oscillate stably in the fundamental supermode with an optical output of 100 mW or more.
摘要翻译：相控阵半导体激光器具有两个或更多个发光条纹。条纹的数量，宽度或中心到中心的间隔在激光器的小面的中心区域和邻近区域之间是不同的，使得激光器可以以100mW或更大的光学输出在基本超声波中稳定地振荡。

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