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31. 发明授权

US5310454A Dry etching method 失效
标题翻译：干蚀刻法
公开(公告)号：US5310454A
公开(公告)日：1994-05-10
申请号：US26042
申请日：1993-03-04
申请人： Tokuhisa Ohiwa , Hisataka Hayashi , Keiji Horioka , Haruo Okano , Takaya Matsushita , Isahiro Hasegawa , Akira Takeuchi
发明人： Tokuhisa Ohiwa , Hisataka Hayashi , Keiji Horioka , Haruo Okano , Takaya Matsushita , Isahiro Hasegawa , Akira Takeuchi
IPC分类号： H01L21/302 , H01L21/3065 , H01L21/311 , B44C1/22 , C03C15/00 , C03C25/06
CPC分类号： H01L21/31116
摘要： A dry etching method by a plasma etching forms a mask pattern, having an opening up to 1 .mu.m width on a silicon oxide layer formed on a silicon substrate. The substrate is laced into a reactive chamber having an etching gas introducing means and fluorocarbon gas and hydrogen gas as the etching gas are introduced such that a ratio of the hydrogen gas to the gas mixture satisfies 50% to 80%. The plasma is generated, and by using the plasma etching, the silicon oxide layer is etched according to the mask pattern to form an opening having an aspect ratio of more than 1 in the silicon oxide layer.
摘要翻译：通过等离子体蚀刻的干蚀刻方法形成在硅基板上形成的氧化硅层上具有至多1μm宽的开口的掩模图案。衬底被引入具有蚀刻气体引入装置的反应室和碳氟化合物气体和氢气作为蚀刻气体，使得氢气与气体混合物的比率满足50％至80％。产生等离子体，并且通过使用等离子体蚀刻，根据掩模图案蚀刻氧化硅层，以在氧化硅层中形成长径比大于1的开口。

32. 发明授权

US5304510A Method of manufacturing a multilayered metallization structure in which the conductive layer and insulating layer are selectively deposited 失效
标题翻译：制造其中导电层和绝缘层被选择性沉积的多层金属化结构的方法
公开(公告)号：US5304510A
公开(公告)日：1994-04-19
申请号：US981427
申请日：1992-11-25
申请人： Kyoichi Suguro , Haruo Okano
发明人： Kyoichi Suguro , Haruo Okano
IPC分类号： H01L21/28 , H01L21/285 , H01L21/316 , H01L21/3205 , H01L21/336 , H01L21/762 , H01L21/768 , H01L21/8234 , H01L27/088 , H01L29/78 , H01L21/44
CPC分类号： H01L21/02164 , H01L21/0217 , H01L21/022 , H01L21/02208 , H01L21/02238 , H01L21/02247 , H01L21/02252 , H01L21/02271 , H01L21/02282 , H01L21/0234 , H01L21/31608 , H01L21/76879 , Y10S148/117
摘要： A method of manufacturing a semiconductor device includes the steps of forming a first insulating layer having a hole on a substrate, selectively forming a conductive layer in the hole, selectively forming a second insulating layer on the first insulating layer, patterning the second insulating layer, and forming an interconnection layer in an opening portion of the second insulating layer formed by patterning so as to be electrically connected to the conductive layer.
摘要翻译：一种制造半导体器件的方法包括以下步骤：在衬底上形成具有孔的第一绝缘层，在孔中选择性地形成导电层，在第一绝缘层上选择性地形成第二绝缘层，图案化第二绝缘层，以及在通过图案化形成的第二绝缘层的开口部分中形成互连层，从而与导电层电连接。

33. 发明授权

US5258332A Method of manufacturing semiconductor devices including rounding of corner portions by etching 失效
标题翻译：制造半导体器件的方法，包括通过蚀刻对角部进行四舍五入
公开(公告)号：US5258332A
公开(公告)日：1993-11-02
申请号：US29307
申请日：1993-03-08
申请人： Keiji Horioka , Haruo Okano , Hirotaka Nishino
发明人： Keiji Horioka , Haruo Okano , Hirotaka Nishino
IPC分类号： H01L21/3065 , H01L21/308 , H01L21/334 , H01L21/311
CPC分类号： H01L29/66181 , H01L21/3065 , H01L21/308 , Y10S438/978
摘要： A method for rounding the corners of trench formed on the silicon substrate with metal, metal silicide or polycrystalline silicon thin film or the step portions of lead layers is provided. The steps of rounding are performed by chemical dry etching using a gas mixture of fluorine and oxygen. The abundance ratio of oxygen is determined to be one or more with respect to the fluorine. This method contributes significantly to the prevention of leakage current and the enhancement of insulating effect in the case of forming trench capacitors or the like.
摘要翻译：提供了一种用金属，金属硅化物或多晶硅薄膜或者导电层的台阶部分在硅衬底上形成的沟槽的四角倒角的方法。舍入的步骤通过使用氟和氧的气体混合物的化学干蚀刻进行。相对于氟，氧的丰度比被确定为一个或多个。在形成沟槽电容器等的情况下，该方法有助于防止漏电流和绝缘效果的提高。

34. 发明授权

US5236562A Method for discharging hydrogen from a vacuum vessel using a roughing vacuum pump and a turbo-molecular pump 失效
标题翻译：使用粗糙真空泵和涡轮分子泵从真空容器中排出氢的方法
公开(公告)号：US5236562A
公开(公告)日：1993-08-17
申请号：US672237
申请日：1991-03-20
申请人： Katsuya Okumura , Haruo Okano , Manabu Tsujimura , Akio Shibata
发明人： Katsuya Okumura , Haruo Okano , Manabu Tsujimura , Akio Shibata
IPC分类号： B01J3/00 , B01J3/02 , B01J12/00 , B01J19/08 , B01J19/12 , C01B5/00 , C01B7/01 , C01B7/19
CPC分类号： B01J19/123 , B01J12/00 , B01J19/08 , B01J3/006 , C01B5/00 , C01B7/012 , C01B7/191
摘要： A method and apparatus for discharging hydrogen from a vacuum vessel using a roughing vacuum pump and a turbo-molecular pump. During discharge of hydrogen from the vacuum vessel, a material which has excellent reactivity with hydrogen, such as a material which has been excited or ionized by microwave or laser radiation, is introduced into the exhaust system. The material reacts with hydrogen to convert hydrogen into another substance of large molecular weight, whereby the evacuating performance of the vacuum exhaust system is improved with respect to discharging of hydrogen.

35. 发明授权

US4838978A Dry etching apparatus 失效
标题翻译：干蚀刻装置
公开(公告)号：US4838978A
公开(公告)日：1989-06-13
申请号：US123353
申请日：1987-11-20
申请人： Makoto Sekine , Haruo Okano , Tsunetoshi Arikado , Yasuhiro Horiike
发明人： Makoto Sekine , Haruo Okano , Tsunetoshi Arikado , Yasuhiro Horiike
IPC分类号： H01L21/302 , H01J37/32 , H01L21/00 , H01L21/3065
CPC分类号： H01L21/67069 , H01J37/32431
摘要： A dry etching apparatus which includes an anode located at an upper side and a cathode located at a lower side which face each other in a vacuum vessel. A high-frequency power can be applied across the anode and the cathode. A flange section extends from the inner wall of the vacuum vessel, and is located between the anode and the cathode. A semiconductor wafer can be placed on the cathode through a tray. The cathode is moved toward the anode together with the tray and the wafer. When the edge portion of the tray abuts against the flange section, the interior of the vacuum vessel is partitioned into an etching chamber and the other chamber. A magnetic field is applied to the etching chamber from outside the vacuum vessel, and an etching gas is also introduced into the etching chamber. When the etching gas is introduced, the interior of the etching chamber is evacuated to be maintained at a predetermined pressure.
摘要翻译：一种干蚀刻装置，其包括位于上侧的阳极和位于真空容器中彼此面对的下侧的阴极。可以在阳极和阴极之间施加高频功率。凸缘部分从真空容器的内壁延伸，并位于阳极和阴极之间。可以通过托盘将半导体晶片放置在阴极上。阴极与托盘和晶片一起向阳极移动。当托盘的边缘部分抵靠凸缘部分时，真空容器的内部被分隔成蚀刻室和另一个室。从真空容器的外部向蚀刻室施加磁场，蚀刻气体也被引入蚀刻室。当蚀刻气体被引入时，蚀刻室的内部被抽真空以保持在预定的压力。

36. 发明授权

US4786361A Dry etching process 失效
标题翻译：干式蚀刻工艺
公开(公告)号：US4786361A
公开(公告)日：1988-11-22
申请号：US22368
申请日：1987-03-05
申请人： Makoto Sekine , Haruo Okano , Yasuhiro Horiike
发明人： Makoto Sekine , Haruo Okano , Yasuhiro Horiike
IPC分类号： H01J37/32 , H01L21/308 , B44C1/22
CPC分类号： H01J37/32623 , H01J37/3266 , H01L21/3085
摘要： A process is disclosed which etches a workpiece, with an etching mask of a predetermined pattern formed on the surface of the workpiece, on an apparatus which includes a container for holding first and second electrodes opposite to each other and a magnetic field generator arranged on a side opposite to that side of the second electrode where the second electrode faces the first electrode, which comprises placing the workpiece on the first electrode, supplying a feed gas into the container, evacuating air in the container to set pressure in the container at a level of 10.sup.-2 torrs, and applying high frequency power across the first and second electrodes to yield plasma whereby the workpiece is etched.
摘要翻译：公开了一种工艺，在工件的表面上刻蚀具有预定图案的蚀刻掩模的工件，该设备包括用于保持彼此相对的第一和第二电极的容器和布置在工件上的磁场发生器所述第二电极与所述第二电极的面对所述第一电极的所述一侧相反，所述第二电极包括将所述工件放置在所述第一电极上，将进料气体供应到所述容器中，抽空所述容器中的空气以将所述容器中的压力设定在一定水平为10-2托，并且通过第一和第二电极施加高频电力以产生等离子体，从而蚀刻工件。

37. 发明授权

US4642171A Phototreating apparatus 失效
标题翻译：光电设备
公开(公告)号：US4642171A
公开(公告)日：1987-02-10
申请号：US756318
申请日：1985-07-18
申请人： Makoto Sekine , Haruo Okano , Yasuhiro Horiike
发明人： Makoto Sekine , Haruo Okano , Yasuhiro Horiike
IPC分类号： H01L21/205 , B01J19/12 , C23C16/48 , C23F1/12 , C23F4/00 , G03F7/004 , H01L21/302 , H01L21/31 , C23C15/00
CPC分类号： C23C16/483 , B01J19/12 , C23F4/00 , G03F7/0041
摘要： A phototreating apparatus has a vacuum container for storing a solid material, a gas inlet for introducing a photoreactive gas into the container, and a light source for radiating into the container, light having a specific wavelength such that it causes a photoreaction of the photoreactive gas. The apparatus phototreats the solid material in the container by utilizing the photoreaction of the photoreactive gas. At least an inner surface of the vacuum container consists of a material which absorbs the light having the specific wavelength.
摘要翻译：光固化装置具有用于储存固体材料的真空容器，用于将光反应性气体引入容器的气体入口和用于辐射到容器中的光源，具有特定波长的光，使得其引起光反应气体的光反应。该设备通过利用光反应性气体的光反应来对容器中的固体材料进行照射。至少真空容器的内表面由吸收特定波长的光的材料构成。

38. 发明授权

US4529475A Dry etching apparatus and method using reactive gases 失效
标题翻译：干蚀刻装置和使用反应气体的方法
公开(公告)号：US4529475A
公开(公告)日：1985-07-16
申请号：US613214
申请日：1984-05-23
申请人： Haruo Okano , Yasuhiro Horiike , Makoto Sekine
发明人： Haruo Okano , Yasuhiro Horiike , Makoto Sekine
IPC分类号： H01J37/32 , H01L21/302 , H01L21/3213 , H01L21/306 , B44C1/22 , C03C15/00 , C23F1/02
CPC分类号： H01L21/32137 , H01J37/32321 , H01L21/302 , H01L21/32136
摘要： A dry etching apparatus is disclosed which uses reactive gases and which is capable of achieving anisotropic etching without causing radiation damage to a workpiece to be selectively etched. The workpiece is placed in a vacuum container into which two feedstock gases are introduced. One of the gases contributes to the etching, while the other forms a film on the side wall of the etched portion of the workpiece, the film protecting it against lateral etching. A first beam which dissociates the first feedstock gas is perpendicularly directed toward the workpiece, whereas a second gas which dissociates the second feedstock gas is directed in the general direction of the workpiece.
摘要翻译：公开了一种使用反应性气体并且能够实现各向异性蚀刻而不会对工件的辐射损伤进行选择性蚀刻的干蚀刻装置。将工件放置在其中引入两种原料气体的真空容器中。气体中的一种有助于蚀刻，而另一种气体在工件的蚀刻部分的侧壁上形成膜，该膜保护其免受横向蚀刻。离开第一原料气体的第一束垂直地指向工件，而解离第二原料气体的第二气体沿工件的大致方向被引导。

39. 发明授权

US4492610A Dry Etching method and device therefor 失效
标题翻译：干蚀刻方法及其设备
公开(公告)号：US4492610A
公开(公告)日：1985-01-08
申请号：US559857
申请日：1983-12-12
申请人： Haruo Okano , Yasuhiro Horiike
发明人： Haruo Okano , Yasuhiro Horiike
IPC分类号： H01J37/34 , H01L21/306 , B44C1/22 , C03C15/00 , C23F1/02
CPC分类号： H01J37/3408
摘要： A dry etching method and device involve induction of a magnetic field having field lines perpendicular to an electric field by magnets which are arranged in the vicinity of a cathode within a reaction chamber, on the surface of the cathode being placed a sample to be etched by a plasma of an etchant gas.
摘要翻译：干蚀刻方法和装置包括通过设置在反应室内的阴极附近的磁体，在阴极的表面上放置待蚀刻的样品来诱导具有垂直于电场的场线的磁场，该阴极被放置在待蚀刻的样品上蚀刻剂气体的等离子体。

40. 发明授权

US4431473A RIE Apparatus utilizing a shielded magnetron to enhance etching 失效
标题翻译： RIE设备利用屏蔽磁控管来增强蚀刻
公开(公告)号：US4431473A
公开(公告)日：1984-02-14
申请号：US396123
申请日：1982-07-07
申请人： Haruo Okano , Yasuhiro Horiike
发明人： Haruo Okano , Yasuhiro Horiike
IPC分类号： C23F4/00 , H01J37/16 , H01J37/34 , H01L21/00 , H01L21/302 , H01L21/3065 , H01L21/677 , C23C15/00
CPC分类号： H01L21/67748 , C23F4/00 , H01J37/16 , H01J37/32743 , H01J37/3408 , H01J37/3455 , H01L21/67069
摘要： A dry etching apparatus for semiconductor wafers has a decompression vessel, the inside of which is divided by a separating wall into a discharge room and a shield room. The discharge room has a pair of elecrodes between which RF electric power is applied. One of the electrodes is placed at the separating wall and supports the wafer which is to be etched. A magnet assembly in the shield room generates a magnetic flux in the discharge room which perpendicularly intersects the electric field between the electrodes. A reactive gas is introduced into the discharge room, however, no discharge occurs, because its pressure is maintained below that required for discharge. This results in a reduced consumption of electric power, less heating, and less damage to the resist mask on the wafer.
摘要翻译：用于半导体晶片的干蚀刻装置具有减压容器，该减压容器的内部由分隔壁分成排出室和屏蔽室。放电室具有施加RF电力的一对电极。其中一个电极放置在分隔壁处，并支撑待蚀刻的晶片。屏蔽室中的磁体组件在放电室中产生与电极之间的电场垂直相交的磁通量。反应气体被引入放电室，然而，由于其压力保持在排出所需的压力以下，所以不会发生放电。这导致电力消耗减少，加热少，并且对晶片上的抗蚀剂掩模的损害较小。

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