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31. 发明授权

US08329054B2 Plasma processing apparatus and plasma processing method 有权
标题翻译：等离子体处理装置和等离子体处理方法
公开(公告)号：US08329054B2
公开(公告)日：2012-12-11
申请号：US12193274
申请日：2008-08-18
申请人： Takamasa Ichino , Ryoji Nishio , Shinji Obama
发明人： Takamasa Ichino , Ryoji Nishio , Shinji Obama
IPC分类号： H01L21/66 , H01L21/302
CPC分类号： B44C1/227 , H01J37/321 , H01J37/32174 , H01L21/6831 , H01L21/6833
摘要： A plasma processing apparatus includes a plasma-generation high-frequency power supply which generates plasma in a processing chamber, a biasing high-frequency power supply which applies high-frequency bias electric power to an electrode on which a sample is placed, a monitor which monitors a peak-to-peak value of the high-frequency bias electric power applied to the electrode, an electrostatic chuck power supply which makes the electrode electrostatically attract the sample, a self-bias voltage calculating unit which calculates self-bias voltage of the sample by monitoring the peak-to-peak value of the high-frequency bias electric power applied to the electrode, and an output voltage control unit which controls output voltage of the electrostatic chuck power supply based on the calculated self-bias voltage.
摘要翻译：等离子体处理装置包括在处理室中产生等离子体的等离子体产生高频电源，对放置有试样的电极施加高频偏置电力的偏置高频电源，监视器监测施加到电极的高频偏置电力的峰 - 峰值，使电极静电吸引样品的静电卡盘电源;计算自偏置电压的自偏压电压的自偏压计算单元，通过监视施加到电极的高频偏置电力的峰 - 峰值的采样，以及基于计算出的自偏压来控制静电卡盘电源的输出电压的输出电压控制单元。

32. 发明申请

US20120145322A1 PLASMA PROCESSING APPARATUS 有权
标题翻译：等离子体加工设备
公开(公告)号：US20120145322A1
公开(公告)日：2012-06-14
申请号：US13020991
申请日：2011-02-04
申请人： Masaharu GUSHIKEN , Megumu Saitou , Ryoji Nishio
发明人： Masaharu GUSHIKEN , Megumu Saitou , Ryoji Nishio
IPC分类号： C23F1/08
CPC分类号： H01J37/321 , H01J37/32174 , H01J37/32183 , H01J37/32651
摘要： In the present invention, there is provided a plasma processing apparatus including a vacuum processing chamber for applying a plasma processing to a sample, a sample stage deployed inside the vacuum processing chamber for mounting the sample thereon, induction antennas provided outside the vacuum processing chamber, a radio-frequency power supply for supplying a radio-frequency power to the induction antennas, and a Faraday shield which is capacitively coupled with the plasma, a radio-frequency voltage being applied to the Faraday shield from the radio-frequency power supply via a matching box, wherein the matching box includes a series LC circuit including a variable capacitor and an inductor, a motor control unit for controlling a motor for the variable capacitor, and a radio-frequency voltage detection unit for detecting the radio-frequency voltage applied to the Faraday shield, the matching box executing a feedback control over the radio-frequency voltage applied to the Faraday shield.
摘要翻译：在本发明中，提供了一种等离子体处理装置，其包括：用于对样品施加等离子体处理的真空处理室;设置在真空处理室内的用于安装样品的样品台;设置在真空处理室外部的感应天线; 用于向感应天线提供射频电力的射频电源以及与等离子体电容耦合的法拉第屏蔽，通过经由匹配箱，其中所述匹配箱包括包括可变电容器和电感器的串联LC电路，用于控制用于所述可变电容器的电动机的电动机控制单元和用于检测施加到所述可变电容器的射频电压的射频电压检测单元法拉第屏蔽，匹配盒对施加到法拉第sh的射频电压执行反馈控制我坚持

33. 发明授权

US08083889B2 Apparatus and method for plasma etching 失效
标题翻译：用于等离子体蚀刻的装置和方法
公开(公告)号：US08083889B2
公开(公告)日：2011-12-27
申请号：US12434877
申请日：2009-05-04
申请人： Go Miya , Manabu Edamura , Ken Yoshioka , Ryoji Nishio
发明人： Go Miya , Manabu Edamura , Ken Yoshioka , Ryoji Nishio
IPC分类号： C23C16/455 , C23C16/52 , C23F1/00 , H01L21/306 , C23C16/06 , C23C16/22
CPC分类号： H01J37/32449 , H01J37/3244 , H01L21/67017 , H01L21/67069
摘要： A plasma etching apparatus capable of performing processing with excellent in-plane uniformity on an object to be processed having a large diameter is provided. The present invention provides a plasma etching apparatus including a processing chamber 13 which performs plasma processing on an object to be processed 1, a first processing gas supply source 40, a second processing gas supply source 50, a first gas inlet 65-1 which introduces a processing gas into the processing chamber, second gas inlets 65-2 which introduce the processing gas into the processing chamber, flow rate regulators 42 and 53 which regulate the flow rate of the processing gas and a gas shunt 60 which divides the first processing gas into a plurality of portions, wherein at least two gas pipes branched by the shunt 60 are provided with the first gas inlet 65-1 or second gas inlets 65-2 and merging sections 63-1 and 63-2 are provided between the shunt 60 and the first gas inlet 65-1 and between the shunt 60 and the second gas inlets 65-2 for merging the second processing gas.
摘要翻译：提供了能够对具有大直径的待处理物体进行具有优异的面内均匀性的处理的等离子体蚀刻装置。本发明提供一种等离子体蚀刻装置，其包括对被处理物1进行等离子体处理的处理室13，第一处理气体供给源40，第二处理气体供给源50，第一气体供给源进入处理室的处理气体，将处理气体引入处理室的第二气体入口65-2，调节处理气体的流量的流量调节器42和53以及将第一处理气体其中由分流器60分支的至少两个气体管道设置有第一气体入口65-1或第二气体入口65-2以及合流部分63-1和63-2，分流器60 和第一气体入口65-1以及分流器60和第二气体入口65-2之间，用于合并第二处理气体。

34. 发明申请

US20110284167A1 PLASMA PROCESSING EQUIPMENT AND PLASMA GENERATION EQUIPMENT 审中-公开
标题翻译：等离子体处理设备和等离子体发生设备
公开(公告)号：US20110284167A1
公开(公告)日：2011-11-24
申请号：US13144299
申请日：2009-01-15
申请人： Ryoji Nishio
发明人： Ryoji Nishio
IPC分类号： C23F1/08
CPC分类号： H01J37/3211 , H01J37/321 , H01J37/32137 , H01J37/32651 , H01J37/3266 , H01J2237/334
摘要： Disclosed is ICP plasma processing equipment wherein uniformity of plasma and plasma ignition are improved. Plasma processing equipment comprises a vacuum processing chamber (1), an insulating material (12), a gas inlet (3), a high frequency induction antenna (antenna) (7) provided upper outside of the vacuum processing chamber (1), magnetic field coils (81, 82) for forming a magnetic field in the vacuum processing chamber (1), a yoke (83) for controlling distribution of a magnetic field in the vacuum processing chamber (1), a high frequency power supply (51) for generating plasma and supplying a high frequency current to the antenna (7), and a power supply for supplying power to the magnetic field coils (81, 82), wherein the antenna (7) is divided into n high frequency induction antenna elements (7-1) (not shown), (7-2), (7-3) (not shown), and (7-4), the divided antenna elements are arranged in tandem on one circle so that a high frequency current delayed sequentially by λ (wavelength of high frequency power supply)/n flows clockwise through the antenna elements (7-2 through 7-4) arranged in tandem via delay means, and a magnetic field is applied from the magnetic field coils (81, 82) to generate electron cyclotron resonance (ECR) phenomenon.
摘要翻译：公开了等离子体和等离子体点火的均匀性提高的ICP等离子体处理设备。等离子体处理设备包括真空处理室（1），绝缘材料（12），气体入口（3），设置在真空处理室（1）的上方的高频感应天线（天线）（7），磁性用于在真空处理室（1）中形成磁场的磁场线圈（81,82），用于控制真空处理室（1）中的磁场分布的磁轭（83），高频电源（51）用于产生等离子体并向天线（7）提供高频电流;以及电源，用于向磁场线圈（81,82）供电，其中天线（7）被分成n个高频感应天线元件如图7-1）（未示出），（7-2），（7-3）（未示出）和（7-4），分割天线元件串联排列在一个圆上，使得高频电流延迟顺序地通过λ（高频电源的波长）/ n顺序地穿过布置的天线元件（7-2至7-4）通过延迟装置串联，并且从磁场线圈（81,82）施加磁场以产生电子回旋共振（ECR）现象。

35. 发明授权

US08057634B2 Method and apparatus for plasma processing 有权
标题翻译：等离子体处理方法和装置
公开(公告)号：US08057634B2
公开(公告)日：2011-11-15
申请号：US10902032
申请日：2004-07-30
申请人： Ryoji Nishio , Tadamitsu Kanekiyo , Yoshiyuki Oota , Tsuyoshi Matsumoto
发明人： Ryoji Nishio , Tadamitsu Kanekiyo , Yoshiyuki Oota , Tsuyoshi Matsumoto
IPC分类号： H01L21/205 , H01L21/302
CPC分类号： G06F17/5081 , G06F17/5086 , H01J37/32082 , H01J37/32642 , H01J37/32935 , H01L21/67069 , H01L21/6875
摘要： The invention provides a plasma processing apparatus capable of minimizing the non-uniformity of potential distribution around wafer circumference, and providing a uniform process across the wafer surface. The apparatus is equipped with a focus ring formed of a dielectric, a conductor or a semiconductor and having RF applied thereto, the design of which is optimized for processing based on a design technique clarifying physical conditions for flattening a sheath-plasma interface above a wafer and the sheath-plasma interface above the focus ring. A surface voltage of the focus ring is determined to be not less than a minimum voltage for preventing reaction products caused by wafer processing from depositing thereon. The surface height, surface voltage, material and structure of the focus ring are optimized so that the height of an ion sheath formed on the focus ring surface is either equal or has a height difference within an appropriate tolerance range to the height of the ion sheath formed on the wafer surface. Optimization of the structure is realized by setting up an appropriate tolerance range taking into consideration the variation caused by consumption of the focus ring.
摘要翻译：本发明提供一种等离子体处理装置，其能够最小化晶片周边周围的电位分布的不均匀性，并且跨晶片表面提供均匀的工艺。该装置配备有由电介质，导体或半导体形成的并且施加RF的聚焦环，其设计被优化用于基于澄清用于使晶片上的鞘等离子体界面平坦化的物理条件的设计技术进行处理以及聚焦环上方的鞘 - 等离子体界面。聚焦环的表面电压被确定为不低于用于防止由晶片加工引起的反应产物沉积在其上的最小电压。聚焦环的表面高度，表面电压，材料和结构被优化，使得形成在聚焦环表面上的离子鞘的高度相等或具有在离子鞘高度适当的公差范围内的高度差形成在晶片表面上。通过考虑由聚焦环的消耗引起的变化，建立适当的公差范围来实现结构的优化。

36. 发明申请

US20080011425A1 Plasma Processing Apparatus And Method 审中-公开
标题翻译：等离子体处理装置及方法
公开(公告)号：US20080011425A1
公开(公告)日：2008-01-17
申请号：US11779396
申请日：2007-07-18
申请人： Ryoji Nishio , Ken Yoshioka , Saburou Kanai , Tadamitsu Kanekiyo , Hideki Kihara , Koji Okuda
发明人： Ryoji Nishio , Ken Yoshioka , Saburou Kanai , Tadamitsu Kanekiyo , Hideki Kihara , Koji Okuda
IPC分类号： C23F1/00
CPC分类号： C23C16/4558 , C23C16/4404 , C23C16/45591 , C23C16/4581 , C23C16/507 , H01J37/321 , H01J37/3244 , H01J37/32477 , H01J37/32495 , H01J37/32697 , H01L21/67069
摘要： A plasma processing apparatus includes a sample stage disposed at a lower part of a processing chamber, a bell jar made of an insulative material constituting an upper portion of a vacuum vessel, a coil antenna disposed outside and around the bell jar to which electric power is supplied so as to generate the plasma in a plasma generating space inside of the bell jar, and a Faraday shield mounted on the bell jar and disposed between an external surface of the bell jar and the coil antenna. A ring shaped member made of an electric conductive material is disposed inside of an inner surface of a ring portion of the processing chamber located below a skirt portion of the bell jar and constitutes a part of the processing chamber. The ring shaped member extends upwardly so as to cover a portion of an inner surface of the bell jar.
摘要翻译：等离子体处理装置包括设置在处理室的下部的样品台，由构成真空容器的上部的绝缘材料制成的钟罩，设置在电筒的外部和周围的线圈天线被提供以在钟罩内部的等离子体产生空间中产生等离子体，以及安装在钟罩上并设置在钟罩的外表面和线圈天线之间的法拉第屏蔽。由导电材料制成的环形构件设置在位于钟罩的裙部下方的处理室的环形部分的内表面的内侧，并构成处理室的一部分。环形构件向上延伸以覆盖钟罩的内表面的一部分。

37. 发明申请

US20070240825A1 Wafer processing apparatus capable of controlling wafer temperature 审中-公开
标题翻译：能够控制晶片温度的晶片处理装置
公开(公告)号：US20070240825A1
公开(公告)日：2007-10-18
申请号：US11812289
申请日：2007-06-18
申请人： Seiichiro Kanno , Manabu Edamura , Ryujiro Udo , Masatsugu Arai , Junichi Tanaka , Saburo Kanai , Ryoji Nishio , Tsunehiko Tsubone , Toru Aramaki
发明人： Seiichiro Kanno , Manabu Edamura , Ryujiro Udo , Masatsugu Arai , Junichi Tanaka , Saburo Kanai , Ryoji Nishio , Tsunehiko Tsubone , Toru Aramaki
IPC分类号： H01L21/306
CPC分类号： H01L21/67248 , H01J37/32935 , H01J2237/2001 , H01L21/67109
摘要： In a wafer processing apparatus, wafers are sequentially placed one by one on a ceramic plate of a wafer stage within a vacuum chamber. The pressure of a heat-conductive gas introduced at this time between the wafer and the ceramic plate is adjusted to control the temperature of the wafer, and the wafer is processed by use of plasma. In this case, the user can select any one of a process for regulating the pressure of the heat-conductive gas each time the wafers are sequentially placed on the wafer stage, a process for optimizing aging conditions, and a process for optimizing heater conditions so that the wafer temperature variation within lot can be reduced by performing the selected process. The selected process is performed on the basis of its conditions that are computed to determine by a control-purpose computer of the processing apparatus.
摘要翻译：在晶片处理装置中，将晶片依次放置在真空室内的晶片台的陶瓷板上。调节此时在晶片和陶瓷板之间引入的导热气体的压力，以控制晶片的温度，并且通过使用等离子体来处理晶片。在这种情况下，用户可以选择每次晶片顺序地放置在晶片台上时用于调节导热气体的压力的处理中的任何一个，优化老化条件的处理和优化加热器条件的处理可以通过执行所选择的处理来减少批次内的晶片温度变化。所选择的处理是根据其计算以由处理装置的控制用计算机确定的条件执行的。

38. 发明申请

US20050028934A1 Apparatus and method for plasma etching 审中-公开
标题翻译：用于等离子体蚀刻的装置和方法
公开(公告)号：US20050028934A1
公开(公告)日：2005-02-10
申请号：US10793886
申请日：2004-03-08
申请人： Go Miya , Manabu Edamura , Ken Yoshioka , Ryoji Nishio
发明人： Go Miya , Manabu Edamura , Ken Yoshioka , Ryoji Nishio
IPC分类号： H01L21/3065 , H01J37/32 , H01L21/00 , C23F1/00
CPC分类号： H01J37/32449 , H01J37/3244 , H01L21/67017 , H01L21/67069
摘要： A plasma etching apparatus capable of performing processing with excellent in-plane uniformity on an object to be processed having a large diameter is provided. The present invention provides a plasma etching apparatus including a processing chamber 13 which performs plasma processing on an object to be processed 1, a first processing gas supply source 40, a second processing gas supply source 50, a first gas inlet 65-1 which introduces a processing gas into the processing chamber, second gas inlets 65-2 which introduce the processing gas into the processing chamber, flow rate regulators 42 and 53 which regulate the flow rate of the processing gas and a gas shunt 60 which divides the first processing gas into a plurality of portions, wherein at least two gas pipes branched by the shunt 60 are provided with the first gas inlet 65-1 or second gas inlets 65-2 and merging sections 63-1 and 63-2 are provided between the shunt 60 and the first gas inlet 65-1 and between the shunt 60 and the second gas inlets 65-2 for merging the second processing gas.
摘要翻译：提供了能够对具有大直径的待处理物体进行具有优异的面内均匀性的处理的等离子体蚀刻装置。本发明提供一种等离子体蚀刻装置，其包括对被处理物1进行等离子体处理的处理室13，第一处理气体供给源40，第二处理气体供给源50，第一气体供给源进入处理室的处理气体，将处理气体引入处理室的第二气体入口65-2，调节处理气体的流量的流量调节器42和53以及将第一处理气体其中由分流器60分支的至少两个气体管道设置有第一气体入口65-1或第二气体入口65-2以及合流部分63-1和63-2，分流器60 和第一气体入口65-1以及分流器60和第二气体入口65-2之间，用于合并第二处理气体。

39. 发明授权

US06825617B2 Semiconductor processing apparatus 失效
标题翻译：半导体处理装置
公开(公告)号：US06825617B2
公开(公告)日：2004-11-30
申请号：US10373711
申请日：2003-02-27
申请人： Seiichiro Kanno , Ryoji Nishio , Ken Yoshioka , Saburou Kanai , Hideki Kihara , Hideyuki Yamamoto
发明人： Seiichiro Kanno , Ryoji Nishio , Ken Yoshioka , Saburou Kanai , Hideki Kihara , Hideyuki Yamamoto
IPC分类号： H01J724
CPC分类号： H01L21/67253 , H01J37/32082 , H01J37/3299 , H01J2237/334 , H01L21/67069 , H01L21/67248
摘要： A semiconductor processing apparatus that processes a semiconductor wafer disposed in a process chamber of a processing apparatus main unit includes a setting unit for enabling a user to set a temperature of the semiconductor wafer and control unit for controlling a processing of the semiconductor wafer based on the temperature of the semiconductor wafer set by the setting unit.
摘要翻译：处理设置在处理设备主单元的处理室中的半导体晶片的半导体处理设备包括：设置单元，用于使用户能够设置用于控制半导体晶片的处理的半导体晶片和控制单元的温度，由设置单元设置的半导体晶片的温度。

40. 发明授权

US06771481B2 Plasma processing apparatus for processing semiconductor wafer using plasma 有权
标题翻译：使用等离子体处理半导体晶片的等离子体处理装置
公开(公告)号：US06771481B2
公开(公告)日：2004-08-03
申请号：US09796494
申请日：2001-03-02
申请人： Ryoji Nishio , Seiichiro Kanno , Hideyuki Yamamoto , Akira Kagoshima
发明人： Ryoji Nishio , Seiichiro Kanno , Hideyuki Yamamoto , Akira Kagoshima
IPC分类号： B23B3128
CPC分类号： H01J37/32082 , H01J37/32706 , H01J37/3299 , Y10T29/49124 , Y10T279/23
摘要： A plasma processing apparatus comprises: a body that comprises a vacuum processing chamber with a wafer stage on which a semiconductor wafer is held, a plasma producing unit for producing plasma within the vacuum chamber, and a high frequency source for applying a high frequency bias voltage to the wafer stage. A control unit controls various parameters of the body of the plasma processing apparatus. The control unit comprises a detecting unit for detecting the high frequency voltage or high frequency current applied to the wafer stage and for calculating a difference in phase between the high frequency voltage and the high frequency current, and a unit for obtaining a characteristic of the plasma or an electric characteristic of the plasma processing apparatus based on the detected high frequency voltage, the detected high frequency current, and the obtained difference in phase.
摘要翻译：一种等离子体处理装置包括：主体，其包括具有保持半导体晶片的晶片台的真空处理室，用于在真空室内产生等离子体的等离子体产生单元和用于施加高频偏置电压的高频源到晶片台。控制单元控制等离子体处理装置的主体的各种参数。控制单元包括用于检测施加到晶片台的高频电压或高频电流并用于计算高频电压和高频电流之间的相位差的检测单元，以及用于获得等离子体的特性的单元或基于检测到的高频电压，检测到的高频电流和所获得的相位差的等离子体处理装置的电特性。

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