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31. 发明授权

US6081023A Semiconductor device 失效
公开(公告)号：US6081023A
公开(公告)日：2000-06-27
申请号：US288673
申请日：1999-04-09
申请人： Gen Murakami , Kunihiro Tsubosaki , Masahiro Ichitani , Kunihiko Nishi , Ichiro Anjoh , Asao Nishimura , Makoto Kitano , Akihiro Yaguchi , Sueo Kawai , Masatsugu Ogata , Syuuji Eguchi , Hiroyoshi Kokaku , Masanori Segawa , Hiroshi Hozoji , Takashi Yokoyama , Noriyuki Kinjo , Aizo Kaneda , Junichi Saeki , Shozo Nakamura , Akio Hasebe , Hiroshi Kikuchi , Isamu Yoshida , Takashi Yamazaki , Kazuyoshi Oshima , Tetsurou Matsumoto
发明人： Gen Murakami , Kunihiro Tsubosaki , Masahiro Ichitani , Kunihiko Nishi , Ichiro Anjoh , Asao Nishimura , Makoto Kitano , Akihiro Yaguchi , Sueo Kawai , Masatsugu Ogata , Syuuji Eguchi , Hiroyoshi Kokaku , Masanori Segawa , Hiroshi Hozoji , Takashi Yokoyama , Noriyuki Kinjo , Aizo Kaneda , Junichi Saeki , Shozo Nakamura , Akio Hasebe , Hiroshi Kikuchi , Isamu Yoshida , Takashi Yamazaki , Kazuyoshi Oshima , Tetsurou Matsumoto
IPC分类号： H01L21/52 , H01L23/31 , H01L23/495 , H01L23/50 , H01L25/10 , H01L29/06 , H05K1/14 , H05K1/18 , H05K3/34
CPC分类号： H01L23/3107 , H01L23/4951 , H01L23/49555 , H01L23/49558 , H01L23/49568 , H01L23/49586 , H01L24/32 , H01L24/49 , H01L25/105 , H01L29/0657 , H01L2224/0401 , H01L2224/05554 , H01L2224/05599 , H01L2224/16245 , H01L2224/29111 , H01L2224/2919 , H01L2224/2929 , H01L2224/32245 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/4554 , H01L2224/4569 , H01L2224/48091 , H01L2224/48247 , H01L2224/4826 , H01L2224/48465 , H01L2224/48599 , H01L2224/48699 , H01L2224/48799 , H01L2224/49171 , H01L2224/73215 , H01L2224/73265 , H01L2224/85205 , H01L2224/8592 , H01L2224/92147 , H01L2225/1005 , H01L2225/1029 , H01L2225/107 , H01L2225/1088 , H01L24/45 , H01L24/48 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01011 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01019 , H01L2924/01023 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01039 , H01L2924/01043 , H01L2924/01045 , H01L2924/01047 , H01L2924/0105 , H01L2924/01051 , H01L2924/01058 , H01L2924/01074 , H01L2924/01075 , H01L2924/01079 , H01L2924/01082 , H01L2924/01092 , H01L2924/0132 , H01L2924/014 , H01L2924/07802 , H01L2924/10253 , H01L2924/13091 , H01L2924/14 , H01L2924/15738 , H01L2924/15747 , H01L2924/1576 , H01L2924/181 , H01L2924/1815 , H01L2924/3025 , H01L2924/3511 , H05K1/144 , H05K1/181 , H05K3/3421
摘要： As the semiconductor chip is large-sized, highly integrated and speeded up, it becomes difficult to pack the semiconductor chip together with leads in a package. In view of this difficulty, there has been adopted the package structure called the "Lead-On-Chip" or "Chip-On-Lead" structure in which the semiconductor and the leads are stacked and packed. In the package of this structure, according to the present invention, the gap between the leading end portions of the inner leads and the semiconductor chip is made wider than that between the inner lead portions except the leading end portions and the semiconductor chip thereby to reduce the stray capacity, to improve the signal transmission rate and to reduce the electrical noises.

32. 发明授权

US5863817A Semiconductor device 失效
公开(公告)号：US5863817A
公开(公告)日：1999-01-26
申请号：US46542
申请日：1998-03-24
申请人： Gen Murakami , Kunihiro Tsubosaki , Masahiro Ichitani , Kunihiko Nishi , Ichiro Anjo , Asao Nishimura , Makoto Kitano , Akihiro Yaguchi , Sueo Kawai , Masatsugu Ogata , Syuuji Eguchi , Hiroyoshi Kokaku , Masanori Segawa , Hiroshi Hozoji , Takashi Yokoyama , Noriyuki Kinjo , Aizo Kaneda , Junichi Saeki , Shozo Nakamura , Akio Hasebe , Hiroshi Kikuchi , Isamu Yoshida , Takashi Yamazaki , Kazuyoshi Oshima , Tetsuro Matsumoto
发明人： Gen Murakami , Kunihiro Tsubosaki , Masahiro Ichitani , Kunihiko Nishi , Ichiro Anjo , Asao Nishimura , Makoto Kitano , Akihiro Yaguchi , Sueo Kawai , Masatsugu Ogata , Syuuji Eguchi , Hiroyoshi Kokaku , Masanori Segawa , Hiroshi Hozoji , Takashi Yokoyama , Noriyuki Kinjo , Aizo Kaneda , Junichi Saeki , Shozo Nakamura , Akio Hasebe , Hiroshi Kikuchi , Isamu Yoshida , Takashi Yamazaki , Kazuyoshi Oshima , Tetsuro Matsumoto
IPC分类号： H01L21/52 , H01L23/31 , H01L23/495 , H01L23/50 , H01L25/10 , H01L29/06 , H05K1/14 , H05K1/18 , H05K3/34 , H01L21/44 , H01L21/48 , H01L21/50
CPC分类号： H01L23/3107 , H01L23/4951 , H01L23/49555 , H01L23/49558 , H01L23/49568 , H01L23/49586 , H01L24/32 , H01L24/49 , H01L25/105 , H01L29/0657 , H01L2224/0401 , H01L2224/05554 , H01L2224/05599 , H01L2224/16245 , H01L2224/29111 , H01L2224/2919 , H01L2224/2929 , H01L2224/32245 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/4554 , H01L2224/4569 , H01L2224/48091 , H01L2224/48247 , H01L2224/4826 , H01L2224/48465 , H01L2224/48599 , H01L2224/48699 , H01L2224/48799 , H01L2224/49171 , H01L2224/73215 , H01L2224/73265 , H01L2224/85205 , H01L2224/8592 , H01L2224/92147 , H01L2225/1005 , H01L2225/1029 , H01L2225/107 , H01L2225/1088 , H01L24/45 , H01L24/48 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01011 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01019 , H01L2924/01023 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01039 , H01L2924/01043 , H01L2924/01045 , H01L2924/01047 , H01L2924/0105 , H01L2924/01051 , H01L2924/01058 , H01L2924/01074 , H01L2924/01075 , H01L2924/01079 , H01L2924/01082 , H01L2924/01092 , H01L2924/0132 , H01L2924/014 , H01L2924/07802 , H01L2924/10253 , H01L2924/13091 , H01L2924/14 , H01L2924/15738 , H01L2924/15747 , H01L2924/1576 , H01L2924/181 , H01L2924/1815 , H01L2924/3025 , H01L2924/3511 , H05K1/144 , H05K1/181 , H05K3/3421
摘要： As the semiconductor chip is large-sized, highly integrated and speeded up, it becomes difficult to pack the semiconductor chip together with leads in a package. In view of this difficulty, there has been adopted the package structure called the "Lead-On-Chip" or "Chip-On-Lead" structure in which the semiconductor and the leads are stacked and packed. In the package of this structure, according to the present invention, the gap between the leading end portions of the inner leads and the semiconductor chip is made wider than that between the inner lead portions except the leading end portions and the semiconductor chip thereby to reduce the stray capacity, to improve the signal transmission rate and to reduce the electrical noises.

33. 发明授权

US5579256A Semiconductor memory device and defect remedying method thereof 失效
公开(公告)号：US5579256A
公开(公告)日：1996-11-26
申请号：US455411
申请日：1995-05-31
申请人： Kazuhiko Kajigaya , Kazuyuki Miyazawa , Manabu Tsunozaki , Kazuyoshi Oshima , Takashi Yamazaki , Yuji Sakai , Jiro Sawada , Yasunori Yamaguchi , Tetsurou Matsumoto , Shinji Udo , Hiroshi Yoshioka , Hirokazu Saito , Mitsuhiro Takano , Makoto Morino , Sinichi Miyatake , Eiji Miyamoto , Yasuhiro Kasama , Akira Endo , Ryoichi Hori , Jun Etoh , Masashi Horiguchi , Shinichi Ikenaga , Atsushi Kumata
发明人： Kazuhiko Kajigaya , Kazuyuki Miyazawa , Manabu Tsunozaki , Kazuyoshi Oshima , Takashi Yamazaki , Yuji Sakai , Jiro Sawada , Yasunori Yamaguchi , Tetsurou Matsumoto , Shinji Udo , Hiroshi Yoshioka , Hirokazu Saito , Mitsuhiro Takano , Makoto Morino , Sinichi Miyatake , Eiji Miyamoto , Yasuhiro Kasama , Akira Endo , Ryoichi Hori , Jun Etoh , Masashi Horiguchi , Shinichi Ikenaga , Atsushi Kumata
IPC分类号： G11C5/00 , G11C5/02 , G11C11/406 , H01L23/485
CPC分类号： H01L24/05 , G11C11/406 , G11C5/025 , H01L24/06 , H01L24/48 , H01L2224/04042 , H01L2224/05553 , H01L2224/05556 , H01L2224/05624 , H01L2224/32245 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/4826 , H01L2224/48465 , H01L2224/48624 , H01L2224/73215 , H01L24/45 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01018 , H01L2924/01019 , H01L2924/01021 , H01L2924/01023 , H01L2924/01024 , H01L2924/01028 , H01L2924/01033 , H01L2924/01037 , H01L2924/01038 , H01L2924/01039 , H01L2924/01041 , H01L2924/01043 , H01L2924/0105 , H01L2924/01051 , H01L2924/01052 , H01L2924/01054 , H01L2924/01055 , H01L2924/01058 , H01L2924/01059 , H01L2924/01074 , H01L2924/01075 , H01L2924/01079 , H01L2924/01082 , H01L2924/01083 , H01L2924/01087 , H01L2924/12042 , H01L2924/1305 , H01L2924/13091 , H01L2924/14 , H01L2924/181 , H01L2924/19041 , H01L2924/19043 , H01L2924/30105 , H01L2924/3011 , H01L2924/3025 , Y10S257/908
摘要： Herein disclosed is a semiconductor memory device, in which peripheral circuits are arranged in a cross area of a semiconductor chip composed of the longitudinal center portions and the transverse center portions, and in which memory arrays are arranged in the four regions which are divided by the cross area. Thanks to this structure in which the peripheral circuits are arranged at the center portion of the chip, the longest signal transmission paths can be shortened to about one half of the chip size to speed up the DRAM which is intended to have a large storage capacity.

34. 发明授权

US5358904A Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US5358904A
公开(公告)日：1994-10-25
申请号：US990272
申请日：1992-12-14
申请人： Gen Murakami , Kunihiro Tsubosaki , Masahiro Ichitani , Kunihiko Nishi , Ichiro Anjoh , Asao Nishimura , Makoto Kitano , Akihiro Yaguchi , Sueo Kawai , Masatsugu Ogata , Syuuji Eguchi , Hiroyoshi Kokaku , Masanori Segawa , Hiroshi Hozoji , Takashi Yokoyama , Noriyuki Kinjo , Aizo Kaneda , Junichi Saeki , Shozo Nakamura , Akio Hasebe , Hiroshi Kikuchi , Isamu Yoshida , Takashi Yamazaki , Kazuyoshi Oshima , Tetsurou Matsumoto
发明人： Gen Murakami , Kunihiro Tsubosaki , Masahiro Ichitani , Kunihiko Nishi , Ichiro Anjoh , Asao Nishimura , Makoto Kitano , Akihiro Yaguchi , Sueo Kawai , Masatsugu Ogata , Syuuji Eguchi , Hiroyoshi Kokaku , Masanori Segawa , Hiroshi Hozoji , Takashi Yokoyama , Noriyuki Kinjo , Aizo Kaneda , Junichi Saeki , Shozo Nakamura , Akio Hasebe , Hiroshi Kikuchi , Isamu Yoshida , Takashi Yamazaki , Kazuyoshi Oshima , Tetsurou Matsumoto
IPC分类号： H01L21/44 , H01L21/48 , H01L21/50 , H01L23/31 , H01L23/495 , H01L25/10 , H01L29/06 , H05K1/14 , H05K1/18 , H05K3/34 , H01L21/60
CPC分类号： H01L24/32 , H01L23/3107 , H01L23/4951 , H01L23/49555 , H01L23/49558 , H01L23/49568 , H01L23/49586 , H01L24/05 , H01L24/06 , H01L25/105 , H01L29/0657 , H01L2224/02166 , H01L2224/0401 , H01L2224/04042 , H01L2224/05554 , H01L2224/05556 , H01L2224/05599 , H01L2224/05624 , H01L2224/06136 , H01L2224/16 , H01L2224/29111 , H01L2224/2919 , H01L2224/2929 , H01L2224/32245 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/45565 , H01L2224/4569 , H01L2224/48091 , H01L2224/48247 , H01L2224/4826 , H01L2224/48465 , H01L2224/48624 , H01L2224/48724 , H01L2224/48799 , H01L2224/73215 , H01L2224/85205 , H01L2224/8592 , H01L2225/1005 , H01L2225/1029 , H01L2225/107 , H01L24/45 , H01L24/48 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01011 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01019 , H01L2924/01023 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01039 , H01L2924/01043 , H01L2924/01045 , H01L2924/01047 , H01L2924/0105 , H01L2924/01051 , H01L2924/01058 , H01L2924/01074 , H01L2924/01075 , H01L2924/01079 , H01L2924/01082 , H01L2924/01092 , H01L2924/0132 , H01L2924/014 , H01L2924/10253 , H01L2924/13091 , H01L2924/14 , H01L2924/15738 , H01L2924/15747 , H01L2924/1576 , H01L2924/181 , H01L2924/1815 , H01L2924/3025 , H01L2924/3511 , H05K1/144 , H05K1/181 , H05K3/3421 , Y10T29/49121
摘要： As the semiconductor chip is large-sized, highly integrated and speeded up, it becomes difficult to pack the semiconductor chip together with leads in a package. In view of this difficulty, there has been adopted the package structure called the "Lead-On-Chip" or "Chip-On-Lead" structure in which the semiconductor and the leads are stacked and packed. In the package of this structure, according to the present invention, the gap between the leading end portions of the inner leads and the semiconductor chip is made wider than that between the inner lead portions except the leading end portions and the semiconductor chip thereby to reduce the stray capacity, to improve the signal transmission rate and to reduce the electrical noises.
摘要翻译：由于半导体芯片尺寸大，高集成度和加速度，所以难以将半导体芯片与包装中的引线组合在一起。鉴于这种困难，已经采用称为半导体和引线堆叠和封装的称为“片上引线”或“引线芯片”结构的封装结构。在该结构的封装中，根据本发明，内引线和半导体芯片的前端部之间的间隙比除引导端部和半导体芯片之外的内引线部分之间的间隙宽，从而减小杂散容量，提高信号传输速率和减少电气噪声。

35. 发明授权

US5311026A Charged particle beam lithography system and method therefor 失效
标题翻译：带电粒子束光刻系统及其方法
公开(公告)号：US5311026A
公开(公告)日：1994-05-10
申请号：US858575
申请日：1992-03-27
申请人： Norio Saitou , Yoshihiko Okamoto , Takashi Yamazaki , Hideo Todokoro
发明人： Norio Saitou , Yoshihiko Okamoto , Takashi Yamazaki , Hideo Todokoro
IPC分类号： H01L21/027 , H01J37/304
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , H01J37/3045 , H01J2237/1505 , H01J2237/3045 , H01J2237/31776
摘要： The present invention relates to a system for drawing patterns on a wafer by using a charged particle beam such as an electron beam, in which a complicated prealigning mechanism used for mounting the wafer on a stage is omitted. Instead, according to the present system, rotation of the wafer is detected and a shaped beam is rotated by an amount corresponding to the value detected. Subsequently, a predetermined pattern is drawn on the substrate. The system includes a detecting device for detecting the rotation of the wafer by using an orientation flat or adjusting marks; a computer for storing a value corresponding to the rotation thus detected; a rotating lens control circuit for receiving data from the computer; and a rotating lens.
摘要翻译：本发明涉及一种通过使用诸如电子束的带电粒子束在晶片上绘制图形的系统，其中省略了用于将晶片安装在平台上的复杂预对准机构。相反，根据本系统，检测晶片的旋转，并且将成形光束旋转与所检测的值对应的量。随后，在衬底上绘制预定图案。该系统包括用于通过使用取向平面或调整标记来检测晶片的旋转的检测装置; 用于存储与所检测的旋转对应的值的计算机; 用于从计算机接收数据的旋转透镜控制电路; 和旋转透镜。

36. 发明授权

US5099926A Impact tool 失效
标题翻译： IMPACT工具
公开(公告)号：US5099926A
公开(公告)日：1992-03-31
申请号：US679246
申请日：1991-04-02
申请人： Fusao Fushiya , Takashi Yamazaki , Yoshio Sugiyama
发明人： Fusao Fushiya , Takashi Yamazaki , Yoshio Sugiyama
IPC分类号： B25D11/12 , B23B45/16 , B25D11/00
CPC分类号： B25D11/005 , B25D2250/131 , B25D2250/191
摘要： An impact tool includes a body, a barrel mounted on the body and a cylinder disposed within the barrel and reciprocally moved by a drive mechanism. A communication groove is formed between the cylinder and the barrel and communicates with the outside. The cylinder includes a plurality of communication holes formed in a radial direction and spaced from each other in a longitudinal direction. A striker is reciprocally movable within the cylinder, and an air chamber is formed between the striker and the cylinder. The striker is positioned at a first position when the tool bit is not pressed on a work. The striker at the first position permits communication between the air chamber and the communication groove through any one of the communication holes so as to be prevented from idle impact. Further, the striker is movable to a second position rearward of the first position through the pressing operation of the tool bit on the work. The striker at a position rearwardly of the second position prevents communication between the air chamber and the communication groove so as to permit normal impact operation by the tool bit.
摘要翻译：冲击工具包括主体，安装在主体上的筒体和设置在筒体内并由驱动机构往复移动的筒体。在气缸和筒体之间形成有与外部连通的连通槽。圆筒包括沿径向形成的多个连通孔，并且在纵向上彼此间隔开。冲击器在气缸内可往复运动，并且在冲击器和气缸之间形成空气室。当工具头没有按压在工件上时，撞针位于第一位置。在第一位置处的撞针允许通过任何一个连通孔在气室和连通槽之间进行连通，以防止空转。此外，通过工具上的工具钻头的按压操作，撞针可以移动到第一位置后的第二位置。在第二位置后方的位置处的撞针防止气室和连通槽之间的连通，从而允许工具钻头进行正常的冲击操作。

37. 外观设计

USD316020S Portable electric hammer drill 失效
公开(公告)号：USD316020S
公开(公告)日：1991-04-09
申请号：US192897
申请日：1988-05-12
申请人： Fusao Fushiya , Takashi Yamazaki , Mikio Saito
设计人： Fusao Fushiya , Takashi Yamazaki , Mikio Saito

38. 发明授权

US4889759A Masking paper 失效
标题翻译：遮盖纸
公开(公告)号：US4889759A
公开(公告)日：1989-12-26
申请号：US203539
申请日：1988-06-01
申请人： Takashi Yamazaki
发明人： Takashi Yamazaki
IPC分类号： B05B15/04 , B65H35/00 , C09J7/02
CPC分类号： C09J7/02 , B05B15/0456 , B65H35/004 , C09J2203/31 , Y10S428/906 , Y10T428/1476 , Y10T428/24669 , Y10T428/24686 , Y10T428/24777 , Y10T428/28 , Y10T428/2839 , Y10T428/2848 , Y10T428/31663 , Y10T428/31667
摘要： An apparatus for allying and dispensing a masking paper wound in a roll form includes a housing accommodating the masking paper, a group of rolls for taking the masking paper out of the housing and a cutter blade for cutting the masking paper. The masking paper is a relatively thin synthetic resin film folded in a plurality of parallel pleats and a relatively thick tape disposed along a longitudinal margin of the film and having a pressure sensitive adhesive layer formed on the opposite sides thereof.
摘要翻译：用于分配卷绕卷筒纸的掩模纸的装置包括容纳掩蔽纸的壳体，用于将掩蔽纸从外壳中取出的一组辊和用于切割掩模纸的切割刀。掩模纸是折叠成多个平行褶皱的相对薄的合成树脂膜和沿着膜的纵向边缘布置的相对厚的带，并且在其相对侧上形成有压敏粘合剂层。

39. 发明授权

US4600492A Magnet driving method and device for same 失效
标题翻译：磁铁驱动方法及装置相同
公开(公告)号：US4600492A
公开(公告)日：1986-07-15
申请号：US758505
申请日：1985-07-24
申请人： Hirosuke Ooshio , Tetsuo Aikawa , Hidetaka Jo , Haruo Okano , Takashi Yamazaki
发明人： Hirosuke Ooshio , Tetsuo Aikawa , Hidetaka Jo , Haruo Okano , Takashi Yamazaki
IPC分类号： C23C14/36 , C23C14/35 , H01J37/34
CPC分类号： H01J37/3455 , H01J37/3408
摘要： A plurality of bar-like magnets are arranged in a vacuum chamber at an equal space interval to form a plurality of strong magnetic fields in a stripe-pattern form and the magnets are moved reciprocally in the direction of arrangement of the magnetic fields while changing gradually the stop points of the magnets over a work to be processed by etching or sputtering in a step-like manner so that the integral effect of each magnetic field acting on the work is uniform over the entire region of the work.
摘要翻译：多个棒状磁体以等间距布置在真空室中，以形成条纹图案形式的多个强磁场，并且磁体在磁场的排列方向上往复移动，同时逐渐变化通过蚀刻或溅射以阶梯状方式处理的工件上的磁体的停止点，使得作用在工件上的每个磁场的整体效应在工件的整个区域上是均匀的。

40. 发明授权

US4442338A Plasma etching apparatus 失效
标题翻译：等离子刻蚀装置
公开(公告)号：US4442338A
公开(公告)日：1984-04-10
申请号：US296305
申请日：1981-08-26
申请人： Takashi Yamazaki
发明人： Takashi Yamazaki
IPC分类号： C23F4/00 , H01J37/32 , H01L21/302 , H01L21/3065 , B23K9/00 , C23F1/02
CPC分类号： H01J37/32 , Y10S422/906
摘要： Disclosed ia a plasma etching apparatus in which an etching chamber accomodates a pair of parallel flat plate electrodes facing each other. The etching chamber is also provided with a device for applying high frequency power to one of the electrodes and a system for introducing a reactive gas. An after-treatment chamber is connected to the etching chamber and provided with a system for introducing a heated gas into the interior, a partition means for hermetically partitioning the etching chamber and after-treatment chamber, and a system for transporting the workpiece in the etching chamber into the after-treatment chamber.
摘要翻译：公开了一种等离子体蚀刻装置，其中蚀刻室容纳彼此面对的一对平行平板电极。蚀刻室还设置有用于向一个电极施加高频功率的装置和用于引入反应气体的系统。后处理室连接到蚀刻室，并且设置有用于将加热气体引入内部的系统，用于气蚀分隔蚀刻室和后处理室的分隔装置，以及用于在蚀刻中输送工件的系统进入后处理室。

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