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31. 发明授权

US06803168B1 Composition for anti-reflective coating or radiation absorbing coating and compounds used in the composition 有权
标题翻译：用于组合物中的抗反射涂层或辐射吸收涂层和化合物的组合物
公开(公告)号：US06803168B1
公开(公告)日：2004-10-12
申请号：US09237125
申请日：1999-01-26
申请人： Munirathna Padmanaban , Wen-Bing Kang , Hatsuyuki Tanaka , Ken Kimura , Georg Pawlowski
发明人： Munirathna Padmanaban , Wen-Bing Kang , Hatsuyuki Tanaka , Ken Kimura , Georg Pawlowski
IPC分类号： G03F7004
CPC分类号： G03F7/091 , C08F220/34 , C08G18/2825 , C08G18/2865 , C08G18/728 , C08G18/8116 , C09D4/00 , C09D5/32 , G03F7/0045
摘要： A composition for an anti-reflective coating or a radiation absorbing coating which can form an anti-reflective coating or a radiation absorbing coating having high absorption to exposed radiation in the range of 100 to 450 nm, no diffusion of photo-generated acid to anti-reflective coating and so on, no intermixing of resist and anti-reflective coating layer, good shelf-life stability, and good step coverage and novel compounds and polymers being preferably used in the composition are disclosed. The composition contains an acrylic or methacrylic compound or polymer with an isocyanate or thioisocyanate group bonded through an alkylene group to a side chain thereof or with an amino or hydroxyl group-containing organic chromophore which absorbs radiation in the range of 100 to 450 nm wavelength and is bonded, for example, through an alkylene group to the isocyanate or thioisocyanate group. Resist patters with high resolution are formed on a substrate. A composition for an anti-reflective coating or a radiation absorbing coating are applied on the substrate and baked to form an anti-reflective coating or a radiation absorbing coating layer. Then, a chemically amplified resist is coated thereon and after patternwize exposure, developed. During baking of the anti-reflective coating or radiation absorbing coating, hardening or curing of the coating takes place by the presence of the isocyanate or thioisocyanate group. On the other hand, the exposed radiation having wavelength in the range of 100 to 450 nm is absorbed by organic chromophore.
摘要翻译：用于抗反射涂层或辐射吸收涂层的组合物，其可以形成对100至450nm范围内的暴露辐射具有高吸收的抗反射涂层或辐射吸收涂层，而不会将光产生的酸扩散到抗反射涂层等，公开了抗蚀剂和抗反射涂层的互相混合，良好的保质期稳定性和良好的阶梯覆盖率，并且组合物中优选使用的新型化合物和聚合物。该组合物含有丙烯酸或甲基丙烯酸类化合物或具有通过亚烷基键合到其侧链上的异氰酸酯或硫代异氰酸酯基团或与吸收在波长为100至450nm范围内的辐射的含氨基或羟基的有机发色团的聚合物，以及例如通过亚烷基键合到异氰酸酯或硫代异氰酸酯基团。在基板上形成具有高分辨率的抗蚀剂图案。将用于抗反射涂层或辐射吸收涂层的组合物施加在基材上并烘烤以形成抗反射涂层或辐射吸收涂层。然后，将化学放大抗蚀剂涂覆在其上，并经过图案化曝光后显影。在防反射涂层或辐射吸收涂层的烘烤期间，涂层的硬化或固化通过异氰酸酯或硫代异氰酸酯基团的存在进行。另一方面，波长在100〜450nm的曝光的辐射被有机发色团吸收。

32. 发明授权

US06365322B1 Photoresist composition for deep UV radiation 有权
标题翻译：用于深紫外线辐射的光刻胶组合物
公开(公告)号：US06365322B1
公开(公告)日：2002-04-02
申请号：US09455872
申请日：1999-12-07
申请人： Munirathna Padmanaban , Ralph R. Dammel
发明人： Munirathna Padmanaban , Ralph R. Dammel
IPC分类号： G03F7004
CPC分类号： G03F7/0045 , G03F7/039 , Y10S430/115 , Y10S430/122
摘要： The present invention relates to a novel photoresist composition sensitive in the deep ultraviolet region, where the photoresist performance is not adversely impacted by basic contaminants in the processing environment of the photoresist. The novel photoresist comprises a polymer, a photoactive compound, a basic compound that is a sulfonium or iodonium compound that is essentially nonabsorbing at the exposure wavelength of the photoresist, and a solvent composition. The invention further relates to a process for imaging such a photoresist in the deep ultraviolet region.
摘要翻译：本发明涉及在深紫外区域敏感的新型光致抗蚀剂组合物，其中光致抗蚀剂性能在光致抗蚀剂的加工环境中不受碱性污染物的不利影响。新型光致抗蚀剂包括聚合物，光活性化合物，碱性化合物，其是在光致抗蚀剂的曝光波长下基本上不吸收的锍或碘鎓化合物和溶剂组合物。本发明还涉及一种用于在深紫外区域中成像这种光致抗蚀剂的方法。

33. 发明授权

US08697336B2 Composition for forming a developable bottom antireflective coating 有权
标题翻译：用于形成可显影底部抗反射涂层的组合物
公开(公告)号：US08697336B2
公开(公告)日：2014-04-15
申请号：US13327030
申请日：2011-12-15
申请人： Shigemasa Nakasugi , Kazuma Yamamoto , Yasushi Akiyama , Shinji Miyazaki , Munirathna Padmanaban , Srinivasan Chakrapani
发明人： Shigemasa Nakasugi , Kazuma Yamamoto , Yasushi Akiyama , Shinji Miyazaki , Munirathna Padmanaban , Srinivasan Chakrapani
IPC分类号： G03F7/027 , G03F7/11 , G03F7/30 , G03F7/40 , H01L21/027
CPC分类号： G03F7/20 , C08K5/1535 , C08K5/3415 , C09D135/00 , G03C1/73 , G03F7/0392 , G03F7/091 , G03F7/095
摘要： The present invention provides a composition for forming a bottom anti-reflective coating, and also provides a photoresist pattern formation method employing that composition. The composition gives a bottom anti-reflective coating used in a lithographic process for manufacturing semiconductor devices, and the coating can be developed with a developing solution for photoresist. The composition contains a solvent, a polymer having a condensed polycyclic aromatic group, and a compound having a maleimide derivative or a maleic anhydride derivative. The composition may further contain a photo acid generator or a crosslinking agent.
摘要翻译：本发明提供了一种用于形成底部抗反射涂层的组合物，并且还提供了使用该组合物的光致抗蚀剂图案形成方法。该组合物提供用于制造半导体器件的光刻工艺中使用的底部抗反射涂层，并且可以用用于光致抗蚀剂的显影溶液来显影涂层。该组合物含有溶剂，具有缩合多环芳基的聚合物和具有马来酰亚胺衍生物或马来酸酐衍生物的化合物。组合物还可以含有光酸产生剂或交联剂。

34. 发明授权

US08623589B2 Bottom antireflective coating compositions and processes thereof 有权
标题翻译：底部抗反射涂料组合物及其工艺
公开(公告)号：US08623589B2
公开(公告)日：2014-01-07
申请号：US13153765
申请日：2011-06-06
申请人： Takanori Kudo , Alberto Dioses , Edward Ng , Srinivasan Chakrapani , Munirathna Padmanaban
发明人： Takanori Kudo , Alberto Dioses , Edward Ng , Srinivasan Chakrapani , Munirathna Padmanaban
IPC分类号： G03F7/38 , G03F7/40 , C09D5/00 , G03F7/039 , G03F7/11
CPC分类号： C09D5/006 , G03F7/091
摘要： The present invention relates to an antireflective coating composition comprising a crosslinking agent, a polymer comprising at least one chromophore group and at least one hydroxyl and/or a carboxyl group, and an additive, further where the additive has structure 1 and comprises at least one arylene-hydroxyl moiety, where Y is selected from an carboxylate anion or sulfonate anion, R1, R2, and R3 are independently selected from unsubstituted C1-C8 alkyl, substituted C1-C8 alkyl, aryl and arylene-hydroxyl; X1, X2, and X3 are independently selected from direct valence bond and C1-C8 alkylene group, and, n=1, 2 or 3. The invention further relates to a process for using the composition.
摘要翻译：本发明涉及包含交联剂，包含至少一个发色团和至少一个羟基和/或羧基的聚合物和添加剂的抗反射涂料组合物，此外，其中添加剂具有结构1并且包含至少一个亚芳基 - 羟基部分，其中Y选自羧酸根阴离子或磺酸根阴离子，R 1，R 2和R 3独立地选自未取代的C 1 -C 8烷基，取代的C 1 -C 8烷基，芳基和亚芳基 - 羟基; X1，X2和X3独立地选自直接键键和C1-C8亚烷基，n = 1,2或3.本发明还涉及使用该组合物的方法。

35. 发明申请

US20100136477A1 Photosensitive Composition 审中-公开
标题翻译：感光组合
公开(公告)号：US20100136477A1
公开(公告)日：2010-06-03
申请号：US12325627
申请日：2008-12-01
申请人： Edward W. Ng , Nelson M. Felix , Munirathna Padmanaban , Srinivasan Chakrapani
发明人： Edward W. Ng , Nelson M. Felix , Munirathna Padmanaban , Srinivasan Chakrapani
IPC分类号： G03F7/004 , G03F7/20
CPC分类号： G03F7/0045 , G03F7/0382 , G03F7/0392 , G03F7/091
摘要： The present invention relates to a novel photosensitive composition comprising a) an organic polymer, b) a photobase generator of structure (1), and c) optionally a photoacid generator, (+A1−O2C)—B—(CO2−A2+)x (1) where A1+ and A2+ are independently an onium cation, x is an integer greater than or equal to 1, and B is a nonfluorinated hydrocarbon moiety. The photosensitive composition may be used as a photoresist composition or be used as an alkali developable antireflective underlayer coating composition.
摘要翻译：本发明涉及一种新颖的光敏组合物，其包含a）有机聚合物，b）结构（1）的光碱产生剂，和c）任选的光酸产生剂，（+ A1-O 2 C）-B-（CO 2 -A 2 +）x （1）其中A1 +和A2 +独立地是鎓阳离子，x是大于或等于1的整数，B是非氟化烃部分。光敏组合物可以用作光致抗蚀剂组合物或用作碱显影性抗反射底层涂料组合物。

36. 发明授权

US07537879B2 Photoresist composition for deep UV and process thereof 失效
标题翻译：用于深紫外线的光致抗蚀剂组合物及其工艺
公开(公告)号：US07537879B2
公开(公告)日：2009-05-26
申请号：US10994745
申请日：2004-11-22
申请人： Francis M. Houlihan , Ralph R. Dammel , Andrew R. Romano , Munirathna Padmanaban , M. Dalil Rahman
发明人： Francis M. Houlihan , Ralph R. Dammel , Andrew R. Romano , Munirathna Padmanaban , M. Dalil Rahman
IPC分类号： G03F7/039 , G03F7/20 , G03F7/30 , G03F7/38 , G03C1/73
CPC分类号： G03F7/0392 , G03F7/0395 , G03F7/0397 , Y10S430/106 , Y10S430/111
摘要： The present invention relates to a novel chemically amplified photoresist, which is sensitive to wavelengths between 300 nm and 100 nm, and comprises a) a novel polymer comprising a sulfone group pendant from a polymer backbone that is insoluble in an aqueous alkaline solution and comprises at least one acidic moiety protected with acid labile group, and b) a compound capable of producing an acid upon irradiation. The invention also relates to a process of imaging the novel positive photoresist composition.
摘要翻译：本发明涉及一种对300nm至100nm之间的波长敏感的新型化学放大光致抗蚀剂，并且包括a）一种新型聚合物，其包含不溶于碱性水溶液的聚合物主链的侧基的砜基，用酸不稳定基团保护的至少一个酸性部分，和b）在照射时能够产生酸的化合物。本发明还涉及对新型正性光致抗蚀剂组合物进行成像的方法。

37. 发明申请

US20080187868A1 Photoactive Compounds 审中-公开
标题翻译：光活性化合物
公开(公告)号：US20080187868A1
公开(公告)日：2008-08-07
申请号：US11672077
申请日：2007-02-07
申请人： Munirathna Padmanaban , Srinivasan Chakrapani
发明人： Munirathna Padmanaban , Srinivasan Chakrapani
IPC分类号： G03C1/00
CPC分类号： G03F7/0045 , G03F7/0392
摘要： The present application relates to a composition comprising a) a polymer containing an acid labile group; b) a compound selected from (i), (ii) and mixtures thereof, where (i) is Ai Xi Bi and (ii) is Ai Xi1; and c) a compound of formula Ai Xi2 where Ai, Bi, Xi, Xi1, and Xi2 are defined herein. The compositions are useful in the semiconductor industry.
摘要翻译：本申请涉及包含a）含有酸不稳定基团的聚合物的组合物; b）选自（i），（ii）及其混合物的化合物，其中（i）为Ai Xi Bi，（ii）为Ai Xi1; 和c）其中Ai，Bi，Xi，Xi1和Xi2在本文中定义的式Ai Xi2的化合物。该组合物可用于半导体工业。

38. 发明申请

US20060024610A1 Photoresist compositions 有权
公开(公告)号：US20060024610A1
公开(公告)日：2006-02-02
申请号：US10909513
申请日：2004-08-02
申请人： Munirathna Padmanaban , Guanyang Lin , Takanori Kudo , Chi-Sun Hong , M. Dalil Rahman
发明人： Munirathna Padmanaban , Guanyang Lin , Takanori Kudo , Chi-Sun Hong , M. Dalil Rahman
IPC分类号： G03C1/76
CPC分类号： G03F7/0395 , Y10S430/111
摘要： The present invention provides for a photoresist composition comprising a mixture of two different copolymers.

39. 发明授权

US06991888B2 Photoresist composition for deep ultraviolet lithography comprising a mixture of photoactive compounds 有权
标题翻译：用于深紫外光刻的光致抗蚀剂组合物，其包含光活性化合物的混合物
公开(公告)号：US06991888B2
公开(公告)日：2006-01-31
申请号：US10439472
申请日：2003-05-16
申请人： Munirathna Padmanaban , Takanori Kudo , Sangho Lee , Ralph R. Dammel , M. Dalil Rahman
发明人： Munirathna Padmanaban , Takanori Kudo , Sangho Lee , Ralph R. Dammel , M. Dalil Rahman
IPC分类号： G03F7/004 , C08F2/46 , C07C53/00 , G03C5/00
CPC分类号： G03F7/0392 , G03F7/0045 , Y10S430/115
摘要： The present invention relates to a novel photoresist composition that can be developed with an aqueous alkaline solution, and is capable of being imaged at exposure wavelengths in the deep ultraviolet. The invention also relates to a process for imaging the novel photoresist as well as novel photoacid generators.The novel photoresist comprises a) a polymer containing an acid labile group, and b) a novel mixture of photoactive compounds, where the mixture comprises a lower absorbing compound selected from structure 1 and 2, and a higher absorbing compound selected from structure 4 and 5, where, R1 and R2 R5, R6, R7, R8, and R9 are defined herein; m=1–5; X− is an anion, and Ar is selected from naphthyl, anthracyl, and structure 3, where R30, R31, R32, R33, and R34 are defined herein.
摘要翻译：本发明涉及一种可用碱性水溶液显影的新型光刻胶组合物，能够在深紫外线的曝光波长下成像。本发明还涉及用于对新型光致抗蚀剂以及新型光酸产生剂进行成像的方法。新型光致抗蚀剂包含a）含有酸不稳定基团的聚合物，和b）光活性化合物的新混合物，其中该混合物包含选自结构1和2的较低吸收化合物和选自结构4和5的较高吸收化合物，其中R 1和R 2 R 5，R 6，R 7，或N R 8，R 9和R 9在本文中定义; m = 1-5; X - 是阴离子，Ar选自萘基，蒽基和结构3，其中R 30，R 31，R SUB > 32，R 33和R 34在本文中定义。

40. 发明授权

US06800416B2 Negative deep ultraviolet photoresist 失效
标题翻译：负深紫外光致抗蚀剂
公开(公告)号：US06800416B2
公开(公告)日：2004-10-05
申请号：US10042531
申请日：2002-01-09
申请人： Takanori Kudo , Munirathna Padmanaban , Ralph R. Dammel , Medhat A. Touky
发明人： Takanori Kudo , Munirathna Padmanaban , Ralph R. Dammel , Medhat A. Touky
IPC分类号： G03F7004
CPC分类号： G03F7/0382 , G03F7/0045 , G03F7/0046 , Y10S430/108
摘要： The present invention relates to a novel negative working deep uv photoresist that is developable in an aqueous alkaline solution, and comprises a fluorinated polymer, photoactive compound and a crosslinking agent. The photoresist composition is particularly useful for patterning with exposure wavelengths of 193 nm and 157 nm.
摘要翻译：本发明涉及一种可在碱性水溶液中显影的新型负极深紫外光致抗蚀剂，其包含氟化聚合物，光活性化合物和交联剂。光致抗蚀剂组合物特别适用于193nm和157nm的曝光波长的图形化。

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