会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 35. 发明申请
    • SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THEREOF
    • 半导体器件及其制造方法
    • US20110101370A1
    • 2011-05-05
    • US12916346
    • 2010-10-29
    • Kai ChengStefan Degroote
    • Kai ChengStefan Degroote
    • H01L29/66H01L21/20
    • H01L21/02389H01L21/02422H01L21/0245H01L21/02458H01L21/0254H01L21/02639H01L29/0649H01L29/2003H01L29/66477H01L29/7786
    • A semiconductor device and method of manufacturing the device is disclosed. In one aspect, the device includes a semiconductor substrate and a GaN-type layer stack on top of the semiconductor substrate. The GaN-type layer stack has at least one buffer layer, a first active layer and a second active layer. Active device regions are definable at an interface of the first and second active layer. The semiconductor substrate is present on an insulating layer and is patterned to define trenches according to a predefined pattern, which includes at least one trench underlying the active device region. The trenches extend from the insulating layer into at least one buffer layer of the GaN-type layer stack and are overgrown within the at least one buffer layer, so as to obtain that the first and the second active layer are continuous at least within the active device regions.
    • 公开了一种半导体器件及其制造方法。 一方面,该器件在半导体衬底的顶部上包​​括半导体衬底和GaN型层叠层。 GaN型层堆叠具有至少一个缓冲层,第一有源层和第二有源层。 有源器件区可以在第一和第二有源层的界面处被定义。 半导体衬底存在于绝缘层上,并被图案化以根据预定图案限定沟槽,其包括位于有源器件区域下方的至少一个沟槽。 沟槽从绝缘层延伸到GaN型层堆叠的至少一个缓冲层中,并且在至少一个缓冲层内长满,从而获得第一和第二活性层至少在活性物质内连续 设备区域。