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    • 3. 发明申请
    • MEMORY CONTROLLER USING TIME-STAGGERED LOCKSTEP SUB-CHANNELS WITH BUFFERED MEMORY
    • 使用具有缓冲存储器的时间延迟锁定子通道的存储器控​​制器
    • US20090327596A1
    • 2009-12-31
    • US12163672
    • 2008-06-27
    • Bruce A. ChristensonRajat Agarwal
    • Bruce A. ChristensonRajat Agarwal
    • G06F12/00G06F9/46
    • G06F13/1684
    • Memory control techniques for dual channel lockstep configurations are disclosed. In accordance with one example embodiment, a memory controller issues two burst-length 4 DRAM commands to two double-data-rate (DDR) DRAM sub-channels behind a memory buffer (e.g., FB-DIMM or buffer-on-board). The two commands are in time-staggered lockstep. The time-stagger allows data coming back from the two back-side DDR sub-channels to flow naturally on the host channel without conflict. Multiple DIMMs can be used to obtain chip-fail ECC capabilities and to reclaim at least some of the lost performance imposed by the burst-length of 4 s typically associated with dual channel lockstep memory controllers. The techniques can be implemented, for instance, with a buffered memory solution such as fully buffered DIMM (FB-DIMM) or buffer-on-board configurations.
    • 公开了用于双通道锁步配置的存储器控​​制技术。 根据一个示例实施例,存储器控制器向存储器缓冲器(例如,FB-DIMM或板上缓冲器)后面的两个双数据速率(DDR)DRAM子通道发出两个突发长度的4个DRAM命令。 这两个命令处于时间交错的锁定状态。 时间错误允许从两个背面的DDR子通道返回的数据在主机通道上自然流动而没有冲突。 可以使用多个DIMM来获得芯片故障ECC功能,并回收通常与双通道锁步存储器控制器相关联的4秒的突发长度所施加的至少一些丢失的性能。 这些技术可以实现,例如使用缓冲存储器解决方案,例如完全缓冲的DIMM(FB-DIMM)或板载缓冲器配置。
    • 6. 发明授权
    • Memory controller using time-staggered lockstep sub-channels with buffered memory
    • 内存控制器使用带有缓冲内存的时间交错锁步子通道
    • US08060692B2
    • 2011-11-15
    • US12163672
    • 2008-06-27
    • Bruce A. ChristensonRajat Agarwal
    • Bruce A. ChristensonRajat Agarwal
    • G06F12/00
    • G06F13/1684
    • Memory control techniques for dual channel lockstep configurations are disclosed. In accordance with one example embodiment, a memory controller issues two burst-length 4 DRAM commands to two double-data-rate (DDR) DRAM sub-channels behind a memory buffer (e.g., FB-DIMM or buffer-on-board). The two commands are in time-staggered lockstep. The time-stagger allows data coming back from the two back-side DDR sub-channels to flow naturally on the host channel without conflict. Multiple DIMMs can be used to obtain chip-fail ECC capabilities and to reclaim at least some of the lost performance imposed by the burst-length of 4 s typically associated with dual channel lockstep memory controllers. The techniques can be implemented, for instance, with a buffered memory solution such as fully buffered DIMM (FB-DIMM) or buffer-on-board configurations.
    • 公开了用于双通道锁步配置的存储器控​​制技术。 根据一个示例实施例,存储器控制器向存储器缓冲器(例如,FB-DIMM或板上缓冲器)后面的两个双数据速率(DDR)DRAM子通道发出两个突发长度的4个DRAM命令。 这两个命令处于时间交错的锁定状态。 时间错误允许从两个背面的DDR子通道返回的数据在主机通道上自然流动而没有冲突。 可以使用多个DIMM来获得芯片故障ECC功能,并回收通常与双通道锁步存储器控制器相关联的4秒的突发长度所施加的至少一些丢失的性能。 这些技术可以实现,例如使用缓冲存储器解决方案,例如完全缓冲的DIMM(FB-DIMM)或板载缓冲器配置。