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31. 发明授权

US08741538B2 Polymer compound, photoresist composition containing such polymer compound, and method for forming resist pattern 有权
标题翻译：高分子化合物，含有该高分子化合物的光致抗蚀剂组合物，以及形成抗蚀剂图案
公开(公告)号：US08741538B2
公开(公告)日：2014-06-03
申请号：US12707462
申请日：2010-02-17
申请人： Toshiyuki Ogata , Syogo Matsumaru , Hideo Hada , Masaaki Yoshida
发明人： Toshiyuki Ogata , Syogo Matsumaru , Hideo Hada , Masaaki Yoshida
IPC分类号： G03F7/00 , G03F7/004
CPC分类号： C08F220/28 , C07C69/54 , C07C2601/14 , C08F222/1006 , C08F232/08 , G03F7/0046 , G03F7/0392 , G03F7/0397
摘要： A polymer compound that, within a chemically amplified positive resist system, exhibits a significant change in alkali solubility from a state prior to exposure to that following exposure, as well as a photoresist composition that includes such a polymer compound and a method for forming a resist pattern, which are capable of forming fine patterns with a high level of resolution. The polymer compound includes, as an alkali-soluble group (i), a substituent group in which a group selected from amongst alcoholic hydroxyl groups, carboxyl groups, and phenolic hydroxyl groups is protected with an acid dissociable, dissolution inhibiting group (ii) represented by a general formula (1) shown below: [Formula 1] —CH2—O-AO—CH2—]n (1) (wherein, A represents an organic group of 1 to 20 carbon atoms with a valency of at least n+1, and n represents an integer from 1 to 4).
摘要翻译：化学放大型正性抗蚀剂体系内的曝光后的状态下的碱溶解度显着变化的高分子化合物以及包含这种高分子化合物的光致抗蚀剂组合物和形成抗蚀剂的方法图案，能够以高分辨率形成精细图案。高分子化合物作为碱溶性基团（i）包括其中选自醇羟基，羧基和酚羟基的基团用酸解离的溶解抑制基团（ii）保护的取代基，通式（1）表示：[式1] -CH 2 -O-AO-CH 2 - ] n（1）（其中，A表示1〜20个碳原子的有机基团， 1，n表示1〜4的整数）。

32. 发明申请

US20070224520A1 Polymer Compound, Photoresist Composition Containing Such Polymer Compound, and Method for Forming Resist Pattern 有权
标题翻译：高分子化合物，含有这种高分子化合物的光致抗蚀剂组合物和形成抗蚀剂图案的方法
公开(公告)号：US20070224520A1
公开(公告)日：2007-09-27
申请号：US11578189
申请日：2005-04-05
申请人： Toshiyuki Ogata , Syogo Matsumaru , Hideo Hada , Masaaki Yoshida
发明人： Toshiyuki Ogata , Syogo Matsumaru , Hideo Hada , Masaaki Yoshida
IPC分类号： C08F8/00 , C07C69/54 , G03F7/039 , C08F20/20
CPC分类号： C08F220/28 , C07C69/54 , C07C2601/14 , C08F222/1006 , C08F232/08 , G03F7/0046 , G03F7/0392 , G03F7/0397
摘要： A polymer compound that, within a chemically amplified positive resist system, exhibits a significant change in alkali solubility from a state prior to exposure to that following exposure, as well as a photoresist composition that includes such a polymer compound and a method for forming a resist pattern, which are capable of forming fine patterns with a high level of resolution. The polymer compound includes, as an alkali-soluble group (i), a substituent group in which a group selected from amongst alcoholic hydroxyl groups, carboxyl groups, and phenolic hydroxyl groups is protected with an acid dissociable, dissolution inhibiting group (ii) represented by a general formula (1) shown below: [Formula 1] —CH2—O-AO—CH2—]n (1) (wherein, A represents an organic group of 1 to 20 carbon atoms with a valency of at least n+1, and n represents an integer from 1 to 4).
摘要翻译：化学放大型正性抗蚀剂体系内的曝光后的状态下的碱溶解度显着变化的高分子化合物以及包含这种高分子化合物的光致抗蚀剂组合物和形成抗蚀剂的方法图案，能够以高分辨率形成精细图案。高分子化合物作为碱溶性基团（i）包括其中选自醇羟基，羧基和酚羟基的基团用酸解离的溶解抑制基团（ii）保护的取代基，通过如下所示的通式（1）：[式1] <？in-line-formula description =“In-line Formulas”end =“lead”？> - CH id =“PRIVATE-USE-CHARACTER-00001”he =“7.20mm”wi =“8.47mm”file =“US20070224520A1-20070927-Brketopenst.TIF”alt =“私人使用字符Brketopenst”img-content =“character”img -format =“tif”/> O-CH <2> （1）<？in-line-formula description =“In-line Formulas”end =“ 尾“→（其中，A表示1〜20个碳原子的有机基团，其化合价至少为n + 1，n表示1〜4的整数）。

33. 发明授权

US07700259B2 Polymer compound, photoresist composition containing such polymer compound, and method for forming resist pattern 有权
标题翻译：高分子化合物，含有该高分子化合物的光致抗蚀剂组合物，以及形成抗蚀剂图案的方法
公开(公告)号：US07700259B2
公开(公告)日：2010-04-20
申请号：US11578189
申请日：2005-04-05
申请人： Toshiyuki Ogata , Syogo Matsumaru , Hideo Hada , Masaaki Yoshida
发明人： Toshiyuki Ogata , Syogo Matsumaru , Hideo Hada , Masaaki Yoshida
IPC分类号： G03C1/00 , C07C69/74
CPC分类号： C08F220/28 , C07C69/54 , C07C2601/14 , C08F222/1006 , C08F232/08 , G03F7/0046 , G03F7/0392 , G03F7/0397
摘要： A polymer compound that, within a chemically amplified positive resist system, exhibits a significant change in alkali solubility from a state prior to exposure to that following exposure, as well as a photoresist composition that includes such a polymer compound and a method for forming a resist pattern, which are capable of forming fine patterns with a high level of resolution. The polymer compound includes, as an alkali-soluble group (i), a substituent group in which a group selected from amongst alcoholic hydroxyl groups, carboxyl groups, and phenolic hydroxyl groups is protected with an acid dissociable, dissolution inhibiting group (ii) represented by a general formula (1) shown below: (wherein, A represents an organic group of 1 to 20 carbon atoms with a valency of at least n+1, and n represents an integer from 1 to 4).
摘要翻译：化学放大型正性抗蚀剂体系内的曝光后的状态下的碱溶解度显着变化的高分子化合物以及包含这种高分子化合物的光致抗蚀剂组合物和形成抗蚀剂的方法图案，能够以高分辨率形成精细图案。高分子化合物作为碱溶性基团（i）包括其中选自醇羟基，羧基和酚羟基的基团用酸解离的溶解抑制基团（ii）保护的取代基，（1）表示的化合物（式中，A表示1〜20个碳原子的至少n + 1的有机基团，n表示1〜4的整数）。

34. 发明授权

US11007896B2 Storage apparatus, control apparatus, and moving body 有权
公开(公告)号：US11007896B2
公开(公告)日：2021-05-18
申请号：US15568193
申请日：2016-06-15
申请人： Masaaki Yoshida , Hideo Yanagita
发明人： Masaaki Yoshida , Hideo Yanagita
IPC分类号： B60L58/13 , B60L58/21 , H02J7/00 , H01M10/44 , H02J7/14 , B60L3/00 , B60L58/16 , B60L50/16 , H01M4/58 , H01M10/0525 , H01M10/46 , H01M10/48 , B60W20/00 , H01M10/052 , H01M4/02 , B60L11/18
摘要： A storage apparatus stores output property data including groups of residual capacities of a secondary battery and output densities corresponding to the residual capacities. In the output property data, both a difference between a residual capacity of a group that includes an extreme value in the output densities and a residual capacity of a group that includes an output density that immediately precedes the extreme value, and a difference between the residual capacity of the group that includes the extreme value in the output densities and a residual capacity of a group that includes an output density that immediately follows the extreme value are less than a difference between output densities of other groups adjacent to each other.

35. 发明授权

US07982531B2 Reference voltage generating circuit and power supply device using the same 有权
标题翻译：参考电压发生电路及其使用的电源装置
公开(公告)号：US07982531B2
公开(公告)日：2011-07-19
申请号：US11915440
申请日：2007-03-20
申请人： Masaaki Yoshida , Hiroaki Nakanishi
发明人： Masaaki Yoshida , Hiroaki Nakanishi
IPC分类号： G05F3/24 , H01L27/088
CPC分类号： H01L27/0883
摘要： A reference voltage generating circuit for generating a reference voltage includes MOSFETs connected to each other. At least one of the MOSFETs includes a control gate and a floating gate that is made hole-rich or discharged by ultraviolet irradiation, and the reference voltage generating circuit is configured to output the difference between threshold voltages of a pair of the MOSFETs as the reference voltage.
摘要翻译：用于产生参考电压的参考电压产生电路包括彼此连接的MOSFET。 MOSFET中的至少一个包括通过紫外线照射使空穴富集或放电的控制栅极和浮置栅极，并且参考电压产生电路被配置为输出一对MOSFET的阈值电压之间的差作为参考电压。

36. 发明申请

US20110054184A1 SURFACE TREATMENT AGENT AND SURFACE TREATMENT METHOD 审中-公开
标题翻译：表面处理剂和表面处理方法
公开(公告)号：US20110054184A1
公开(公告)日：2011-03-03
申请号：US12870439
申请日：2010-08-27
申请人： Masaaki Yoshida , Mai Sugawara , Jun Koshiyama
发明人： Masaaki Yoshida , Mai Sugawara , Jun Koshiyama
IPC分类号： C07F7/00 , C09K3/00
CPC分类号： C07F7/10 , H01L21/0271 , H01L21/306 , H01L21/3105
摘要： The object is to provide a surface treatment agent that can effectively prevent pattern collapse of an inorganic pattern or resin pattern provided on a substrate, and a surface treatment method using such a surface treatment agent. In addition, as another object, the present invention has an object of providing a surface treatment agent that can carry out silylation treatment to a high degree on the surface of a substrate, and a surface treatment method using such a surface treatment agent. The surface treatment agent used in the surface treatment of a substrate contains a silylation agent and a silylated heterocyclic compound.
摘要翻译：本发明的目的是提供一种表面处理剂，其能够有效地防止在基板上设置的无机图案或树脂图案的图案塌陷，以及使用这种表面处理剂的表面处理方法。此外，作为另一个目的，本发明的目的是提供一种能够在基材表面上高度进行甲硅烷基化处理的表面处理剂和使用这种表面处理剂的表面处理方法。用于底物表面处理的表面处理剂含有甲硅烷基化剂和甲硅烷基化杂环化合物。

37. 发明申请

US20090272973A1 Semiconductor wafer including semiconductor chips divided by scribe line and process-monitor electrode pads formed on scribe line 失效
标题翻译：半导体晶片包括由切割线划分的半导体芯片和在划线上形成的工艺监视电极焊盘
公开(公告)号：US20090272973A1
公开(公告)日：2009-11-05
申请号：US11794649
申请日：2006-11-22
申请人： Masaaki Yoshida , Satoshi Kouno
发明人： Masaaki Yoshida , Satoshi Kouno
IPC分类号： H01L23/58 , H01L23/544
CPC分类号： H01L22/34 , H01L22/32 , H01L27/0207 , H01L2224/02166 , H01L2224/05554
摘要： The present invention discloses a semiconductor wafer having a scribe line dividing the semiconductor wafer into a matrix of plural semiconductor chips. The semiconductor wafer includes a polysilicon layer, a poly-metal interlayer insulation film formed on the polysilicon layer, and a first metal wiring layer formed on the poly-metal interlayer insulation film. The semiconductor wafer includes a process-monitor electrode pad formed on a dicing area of the scribe line. The process-monitor electrode pad has a width greater than the width of the dicing area. The process-monitor electrode pad includes a contact hole formed in the poly-metal insulation film for connecting the first metal wiring layer to the polysilicon layer.
摘要翻译：本发明公开了一种具有将半导体晶片分割为多个半导体芯片的矩阵的划线的半导体晶片。半导体晶片包括形成在多晶硅层上的多晶硅层，多金属层间绝缘膜和形成在多金属层间绝缘膜上的第一金属布线层。半导体晶片包括形成在划线的切割区域上的处理监测电极焊盘。处理监视器电极焊盘的宽度大于切割区域的宽度。处理监视电极焊盘包括形成在多金属绝缘膜中的接触孔，用于将第一金属布线层连接到多晶硅层。

38. 发明授权

US07579645B2 Semiconductor device having non-volatile memory cell 失效
标题翻译：具有非易失性存储单元的半导体器件
公开(公告)号：US07579645B2
公开(公告)日：2009-08-25
申请号：US10588479
申请日：2005-12-19
申请人： Masaaki Yoshida
发明人： Masaaki Yoshida
IPC分类号： H01L29/788
CPC分类号： G11C16/30 , G11C16/0433 , H01L21/823462 , H01L27/115 , H01L27/11521 , H01L27/11524
摘要： A semiconductor device is disclosed that includes a nonvolatile memory cell having a memory transistor and a selection transistor, and a peripheral circuit transistor. The memory transistor includes a memory gate oxide film that is arranged on a semiconductor substrate, and a floating gate made of polysilicon that is arranged on the memory gate oxide film. The selection transistor is serially connected to the memory transistor and includes a selection gate oxide film that is arranged on the semiconductor substrate, and a selection gate made of polysilicon that is arranged on the selection gate oxide film. The peripheral circuit transistor includes a peripheral circuit gate oxide film that is arranged on the semiconductor substrate, and a peripheral circuit gate made of polysilicon that is arranged on the peripheral circuit gate oxide film. The memory gate oxide film is arranged to be thinner than the peripheral circuit gate oxide film.
摘要翻译：公开了一种半导体器件，其包括具有存储晶体管和选择晶体管的非易失性存储单元和外围电路晶体管。存储晶体管包括布置在半导体衬底上的存储栅极氧化膜和布置在存储栅极氧化膜上的由多晶硅制成的浮置栅极。选择晶体管串联连接到存储晶体管，并且包括布置在半导体衬底上的选择栅极氧化膜以及布置在选择栅氧化膜上的由多晶硅制成的选择栅极。外围电路晶体管包括布置在半导体衬底上的外围电路栅极氧化膜，以及设置在外围电路栅氧化膜上的由多晶硅制成的外围电路栅极。存储栅氧化膜被布置成比外围电路栅极氧化膜薄。

39. 发明申请

US20070164346A1 Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US20070164346A1
公开(公告)日：2007-07-19
申请号：US10588479
申请日：2005-12-19
申请人： Masaaki Yoshida
发明人： Masaaki Yoshida
IPC分类号： H01L29/788
CPC分类号： G11C16/30 , G11C16/0433 , H01L21/823462 , H01L27/115 , H01L27/11521 , H01L27/11524
摘要： A semiconductor device is disclosed that includes a nonvolatile memory cell having a memory transistor and a selection transistor, and a peripheral circuit transistor. The memory transistor includes a memory gate oxide film that is arranged on a semiconductor substrate, and a floating gate made of polysilicon that is arranged on the memory gate oxide film. The selection transistor is serially connected to the memory transistor and includes a selection gate oxide film that is arranged on the semiconductor substrate, and a selection gate made of polysilicon that is arranged on the selection gate oxide film. The peripheral circuit transistor includes a peripheral circuit gate oxide film that is arranged on the semiconductor substrate, and a peripheral circuit gate made of polysilicon that is arranged on the peripheral circuit gate oxide film. The memory gate oxide film is arranged to be thinner than the peripheral circuit gate oxide film.
摘要翻译：公开了一种半导体器件，其包括具有存储晶体管和选择晶体管的非易失性存储单元和外围电路晶体管。存储晶体管包括布置在半导体衬底上的存储栅极氧化膜和布置在存储栅极氧化膜上的由多晶硅制成的浮置栅极。选择晶体管串联连接到存储晶体管，并且包括布置在半导体衬底上的选择栅极氧化膜以及布置在选择栅氧化膜上的由多晶硅制成的选择栅极。外围电路晶体管包括布置在半导体衬底上的外围电路栅极氧化膜，以及设置在外围电路栅氧化膜上的由多晶硅制成的外围电路栅极。存储栅氧化膜被布置成比外围电路栅极氧化膜薄。

40. 发明授权

US06336054B1 Interlock apparatus for a transfer machine 失效
标题翻译：用于转印机的联锁装置
公开(公告)号：US06336054B1
公开(公告)日：2002-01-01
申请号：US09291045
申请日：1999-04-14
申请人： Yoshiharu Ota , Masaaki Yoshida , Shinya Tanoue , Tatsuya Iwasaki
发明人： Yoshiharu Ota , Masaaki Yoshida , Shinya Tanoue , Tatsuya Iwasaki
IPC分类号： G06F1900
CPC分类号： H01L21/67748 , H01L21/67242 , H01L21/67259
摘要： A processing system for processing a substrate. The processing system includes a plurality of processing machines, a machine movable along a transfer path for transferring the substrate to the machines, a drive unit for driving the machine, and a control unit. The control unit includes a memory for storing a teaching threshold in a teaching mode and a practical operation threshold in a practical operation mode that is higher than the teaching threshold when a moving parameter of the drive unit exceeds a given value. The control unit also includes a controller monitoring a parameter representing a moving state of the drive unit to stop the drive unit when the parameter exceeds the practical operation threshold in the practical operation mode or when the parameter exceeds the teaching threshold in the teaching mode.
摘要翻译：一种用于处理衬底的处理系统。处理系统包括多个处理机器，沿着用于将基板传送到机器的传送路径移动的机器，用于驱动机器的驱动单元和控制单元。控制单元包括存储器，用于在实际操作模式中存储教学阈值和实际操作阈值，该实际操作模式当驱动单元的移动参数超过给定值时高于教学阈值。控制单元还包括控制器，当在实践操作模式中参数超过实际操作阈值时或者当教学模式中参数超过教学阈值时，监控表示驱动单元的移动状态的参数以停止驱动单元。

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