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    • 34. 发明授权
    • Fine pattern forming method
    • 精细图案形成方法
    • US5252430A
    • 1993-10-12
    • US812839
    • 1991-12-20
    • Kazuhiko HashimotoNoboru Nomura
    • Kazuhiko HashimotoNoboru Nomura
    • G03F7/004G03F7/20G03F7/38G03C5/00
    • G03F7/0045G03F7/2059G03F7/38Y10S430/143
    • The fine pattern forming method includes the steps of applying an organic polymer film on a semiconductor substrate and heat treating the same; applying a resin solution (including an acid degradation polymer or an acid reactive monomer, an acid generator capable of generating an acid by irradiation with an electric charged beam, and a silicone resin) on the organic polymer layer and heat treating the same; carrying out a heat treatment after a pattern is written, causing the generated acid to react with the acid degradation polymer or the acid reactive monomer and carrying out a development in an alkaline solution to form a resist pattern; and etching the organic polymer layer using the resist pattern as a mask. The use of the resist layer including the silicone resin, the acid generator, and the acid degradation polymer or the acid reactive monomer enables an accurate fine resist pattern to be formed which has a high sensitivity and dry etching resistance, and in which charging is prevented when a pattern is written by a charged beam.
    • 精细图案形成方法包括以下步骤:在半导体衬底上施加有机聚合物膜并对其进行热处理; 在有机聚合物层上涂布树脂溶液(包括酸降解聚合物或酸反应性单体,能够通过带电束照射产生酸的酸产生剂和有机硅树脂)并对其进行热处理; 在图案写入之后进行热处理,使所产生的酸与酸降解聚合物或酸反应性单体反应,并在碱性溶液中进行显影以形成抗蚀剂图案; 并使用抗蚀图案作为掩模蚀刻有机聚合物层。 使用包含硅树脂,酸产生剂,酸降解聚合物或酸反应性单体的抗蚀剂层,能够形成具有高灵敏度和耐干蚀刻性的精确的抗蚀剂图案,并且防止充电 当图案由带电束写入时。
    • 35. 发明授权
    • Fine pattern forming method
    • 精细图案形成方法
    • US5169494A
    • 1992-12-08
    • US742550
    • 1991-08-08
    • Kazuhiko HashimotoTaichi KoizumiKenji KawakitaNoboru Nomura
    • Kazuhiko HashimotoTaichi KoizumiKenji KawakitaNoboru Nomura
    • G03F7/039G03F7/09
    • G03F7/094G03F7/039
    • The present invention provides a method of forming a fine pattern comprising the steps of forming on a semiconductor substrate an organic polymer film and heat treating it, forming on the organic polymer film an inorganic film and heat treating it, forming on the inorganic film an electron beam resist film and heat treating it, drawing a pattern on the resist film, developing it to form a resist pattern, and etching the inorganic film and the organic polymer film using the resist pattern as a mask, wherein the improvement comprises using one substance selected from the group consisting of a polyphenylene sulfide, a derivative thereof, and a polymer represented by the formula (I): ##STR1## where n is a positive integer, for forming at least one of the organic polymer film and the electron beam resist film. According to the present invention, it is possible to prevent charging by incident electrons, thereby keeping free of field butting and reduction of overlay accuracy, and to form an accurate and vertical fine resist pattern.
    • 本发明提供一种形成精细图案的方法,包括以下步骤:在半导体衬底上形成有机聚合物膜并进行热处理,在有机聚合物膜上形成无机膜并进行热处理,在无机膜上形成电子 抗蚀剂膜并对其进行热处理,在抗蚀剂膜上绘制图案,将其显影以形成抗蚀剂图案,并使用抗蚀剂图案作为掩模蚀刻无机膜和有机聚合物膜,其中改进包括使用选择的一种物质 由聚苯硫醚,其衍生物和由式(I)表示的聚合物组成:其中n为正整数,用于形成至少一个有机聚合物膜和电子 光束抗蚀膜。 根据本发明,可以防止入射电子的充电,从而保持无间隙对接和降低覆盖精度,并形成精确和垂直的精细抗蚀剂图案。
    • 38. 发明授权
    • Water-soluble photopolymer and method of forming pattern by use of the
same
    • 水溶性光聚合物及其形成方法
    • US4745042A
    • 1988-05-17
    • US724304
    • 1985-04-17
    • Masaru SasagoMasayuki EndoKenichi TakeyamaNoboru Nomura
    • Masaru SasagoMasayuki EndoKenichi TakeyamaNoboru Nomura
    • G03F7/021G03F7/022G03F7/09G03F7/095G03C1/495G03C1/52G03C1/71G03C5/16
    • G03F7/022G03F7/0215G03F7/091G03F7/095
    • This invention relates to a composition of a water-soluble photopolymer which is synthesized from a water-soluble organic matter, which matter is a base polymer produced and refined particularly by bacterial culture biotechnically and contains at least one of polysaccharides, protein, gelatin, casein, polyvinyl pyrrolidone and polyvinyl alcohol, in particular pullulan which is a natural polysaccharide, and chemicals to add functions to aqueous solution of the base polymer, for example, water-soluble radiation sensitive chemical, crosslinking agent, catalyst, epoxy compound, and a compound possessing bleaching or fading action with respect to radiation.The water-soluble photopolymer can be developed in water, and is high in safety and small in aging, and is expected to be used as the material of single-layer resist or multi-layer resist of high resolution and high resistance, or as the material for contrast enhanced litography. Besides, when it is applied in said pattern forming method, much finer patterns may be formed.
    • 本发明涉及一种由水溶性有机物合成的水溶性光聚合物组合物,其特征在于生物技术生产和精制而成的基质聚合物,并含有多糖,蛋白质,明胶,酪蛋白中的至少一种 ,聚乙烯吡咯烷酮和聚乙烯醇,特别是作为天然多糖的支链淀粉,以及赋予基础聚合物水溶液功能的化学品,例如水溶性辐射敏感化学品,交联剂,催化剂,环氧化合物和化合物 拥有相对于辐射的漂白或褪色作用。 水溶性光聚合物可以在水中显影,安全性高,老化程度低,有望用作高分辨率,高电阻的单层抗蚀剂或多层抗蚀剂的材料,或作为 材料对比增强了诉讼。 此外,当以所述图案形成方法应用时,可以形成更精细的图案。