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1. 发明授权

US5057689A Scanning electron microscope and a method of displaying cross sectional profiles using the same 失效
标题翻译：扫描电子显微镜和使用其显示跨部分轮廓的方法
公开(公告)号：US5057689A
公开(公告)日：1991-10-15
申请号：US583541
申请日：1990-09-17
申请人： Noboru Nomura , Hideo Nakagawa , Taichi Koizumi , Kenji Harafuji , Mitsuhiro Okuni , Norimichi Anazawa
发明人： Noboru Nomura , Hideo Nakagawa , Taichi Koizumi , Kenji Harafuji , Mitsuhiro Okuni , Norimichi Anazawa
IPC分类号： H01J37/141 , H01J37/153
CPC分类号： H01J37/141 , H01J37/153
摘要： A scanning electron microscope is disclosed in which an objective lens includes a first pole piece and a second pole piece. The first pole piece is provided with a hole through which an electron beam passes, and is disposed between an electron gun for emitting the electron beam and the second pole piece. The second pole piece has a planar portion on which a specimen is placed, and the second pole piece being mounted on a supporting block movable in a plane substantially perpendicular to the projecting direction of the electron beam.

2. 发明授权

US5436424A Plasma generating method and apparatus for generating rotating electrons in the plasma 失效
标题翻译：用于在等离子体中产生旋转电子的等离子体产生方法和装置
公开(公告)号：US5436424A
公开(公告)日：1995-07-25
申请号：US80824
申请日：1993-06-24
申请人： Ichiro Nakayama , Noboru Nomura , Tokuhiko Tamaki , Mitsuhiro Okuni , Masafumi Kubota
发明人： Ichiro Nakayama , Noboru Nomura , Tokuhiko Tamaki , Mitsuhiro Okuni , Masafumi Kubota
IPC分类号： H01L21/302 , H01J37/32 , H01L21/3065 , H05H1/46 , B23K10/00
CPC分类号： H01J37/32091 , H01J37/32165
摘要： A plasma generating apparatus includes a vacuum chamber having an insulated inner surface, more than two electrodes arranged on the insulated inner surface of the vacuum chamber, a high frequency applying device for applying high frequencies having different phases in order of positions of the electrodes, and a holder on which an object to be processed is placed. In the apparatus, a magnetic field is produced under plural alternating electric fields, so that electrons in a plasma generating portion are rotated to generate high density plasma under a high vacuum when the high frequencies are applied to the electrodes to generate the plasma and a specified process such as etching, CVD, or doping is carried on the object by reaction products generated at the portion.
摘要翻译：一种等离子体发生装置，包括具有绝缘内表面的真空室，布置在真空室绝缘内表面上的多于两个电极的高频施加装置，用于按照电极位置的顺序施加具有不同相位的高频; 放置待处理物体的支架。在该装置中，在多个交变电场下产生磁场，使得当将高频施加到电极以产生等离子体和指定的等离子体时，等离子体产生部分中的电子在高真空下旋转以产生高密度等离子体通过在该部分产生的反应产物在物体上进行诸如蚀刻，CVD或掺杂的工艺。

3. 发明申请

US20060038217A1 Dielectric memory device and method for fabricating the same 审中-公开
标题翻译：介质存储器件及其制造方法
公开(公告)号：US20060038217A1
公开(公告)日：2006-02-23
申请号：US11193396
申请日：2005-08-01
申请人： Takumi Mikawa , Mitsuhiro Okuni , Hiroshi Yoshida
发明人： Takumi Mikawa , Mitsuhiro Okuni , Hiroshi Yoshida
IPC分类号： H01L27/108 , H01L21/8242
CPC分类号： H01L27/11502 , H01L27/11507 , H01L28/91
摘要： A method for fabricating a dielectric memory device is carried out in the following manner. A first lower electrode is formed above a substrate, and then a first insulating film is formed on the first lower electrode. Through the first insulating film, a hole is formed which reaches an upper surface of the first lower electrode, and then a conductive film is formed on at least the sides and bottom of the hole. Etching is performed to remove a portion of the conductive film located on the bottom of the hole, thereby forming a second lower electrode made of the conductive film remaining on the sides of the hole. On the first and second lower electrodes, a capacitor insulating film is formed so that the hole is not fully filled with the film; and then an upper electrode is formed on the capacitor insulating film.
摘要翻译：以下述方式进行介质存储装置的制造方法。第一下电极形成在基板上方，然后在第一下电极上形成第一绝缘膜。通过第一绝缘膜，形成到达第一下电极的上表面的孔，然后在孔的至少两侧和底部形成导电膜。进行蚀刻以去除位于孔底部的导电膜的一部分，从而形成由导电膜制成的第二下电极，该导电膜残留在孔的侧面。在第一和第二下部电极上，形成电容器绝缘膜，使得孔未完全充满膜; 然后在电容器绝缘膜上形成上电极。

4. 发明授权

US06844264B2 Dry etching method 有权
标题翻译：干蚀刻法
公开(公告)号：US06844264B2
公开(公告)日：2005-01-18
申请号：US10006718
申请日：2001-12-10
申请人： Mitsuhiro Okuni
发明人： Mitsuhiro Okuni
IPC分类号： C23F4/00 , H01L21/302 , H01L21/3065 , H01L21/3213
CPC分类号： H01L21/32136
摘要： When the Cu-containing aluminum film is dry-etched with etching gas containing chlorine gas, the gas stay time τ of the etching gas staying in the chamber, which is expressed by P·V/Q, where P being the chamber pressure (unit: Pa), V the chamber volume (unit: L) and Q the total flow of etching gas (unit: Pa·L/sec), is from 0.15 seconds to 0.30 seconds inclusive.
摘要翻译：当用含氯气的蚀刻气体对含Cu的铝膜进行干蚀刻时，留在室内的蚀刻气体的气体停留时间τ由PV / Q表示，其中P为室压（单位：Pa ），V为室容积（单位：L），Q为蚀刻气体的总流量（单位：Pa·L / sec）为0.15秒〜0.30秒。

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