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31. 发明授权

US06492277B1 Specimen surface processing method and apparatus 有权
标题翻译：试样表面处理方法和装置
公开(公告)号：US06492277B1
公开(公告)日：2002-12-10
申请号：US09393893
申请日：1999-09-10
申请人： Tetsuo Ono , Yasuhiro Nishimori , Takashi Sato , Naoyuki Kofuji , Masaru Izawa , Yasushi Goto , Ken Yoshioka , Hideyuki Kazumi , Tatsumi Mizutani , Tokuo Kure , Masayuki Kojima , Takafumi Tokunaga , Motohiko Yoshigai
发明人： Tetsuo Ono , Yasuhiro Nishimori , Takashi Sato , Naoyuki Kofuji , Masaru Izawa , Yasushi Goto , Ken Yoshioka , Hideyuki Kazumi , Tatsumi Mizutani , Tokuo Kure , Masayuki Kojima , Takafumi Tokunaga , Motohiko Yoshigai
IPC分类号： H01L21302
CPC分类号： H01J37/32082 , H01L21/32136
摘要： Electrical damage to semiconductor elements in the plasma etching thereof is suppressed. In processing of a fine pattern by plasma etching, the high frequency power supply to be applied to the specimen is turned off before the charge potential at a portion of the pattern reaches the breakdown voltage of the gate oxide film which is interconnected to said fine pattern, and then the high frequency power supply is turned on when the charge potential at the portion of the pattern drops substantially. This on and off control is effected in a repetitive mode of operation.
摘要翻译：抑制其等离子体蚀刻对半导体元件的电气损伤。在通过等离子体蚀刻处理精细图案时，在图案的一部分处的电荷电位达到与所述精细图案互连的栅极氧化膜的击穿电压之前，施加到样本的高频电源被关断，然后当图案部分的电荷电位基本上下降时，高频电源被接通。该开启和关闭控制以重复的操作模式进行。

32. 发明授权

US08491751B2 Plasma processing apparatus 失效
标题翻译：等离子体处理装置
公开(公告)号：US08491751B2
公开(公告)日：2013-07-23
申请号：US13457082
申请日：2012-04-26
申请人： Hiroyuki Kobayashi , Masaru Izawa
发明人： Hiroyuki Kobayashi , Masaru Izawa
IPC分类号： C23F1/00 , H01L21/306 , C23C16/00 , B05C13/00
CPC分类号： H01J37/32642 , H01J37/32623 , H01J2237/335 , H01L21/67207 , H01L21/68735 , H01L21/68785 , Y10S156/915
摘要： A diameter of a mounting unit of the stage of an ashing processing apparatus is less than a diameter of a mounting unit of the stage of an etching processing apparatus, and the diameter of the mounting unit of the stage of the etching processing apparatus is less than a diameter of an objective item.
摘要翻译：灰化处理装置的台的安装单元的直径小于蚀刻处理装置的台的安装单元的直径，并且蚀刻处理装置的台的安装单元的直径小于客观物品的直径。

33. 发明申请

US20110120647A1 PLASMA PROCESSING APPARATUS INCLUDING ETCHING PROCESSING APPARATUS AND ASHING PROCESSING APPARATUS AND PLASMA PROCESSING METHOD USING PLASMA PROCESSING APPARATUS 失效
标题翻译：等离子体处理装置，其中包括蚀刻加工装置和使用等离子体加工装置的匀浆加工装置和等离子体处理方法
公开(公告)号：US20110120647A1
公开(公告)日：2011-05-26
申请号：US13018838
申请日：2011-02-01
申请人： Hiroyuki KOBAYASHI , Masaru Izawa
发明人： Hiroyuki KOBAYASHI , Masaru Izawa
IPC分类号： C23F1/08
CPC分类号： H01J37/32642 , H01J37/32623 , H01J2237/335 , H01L21/67207 , H01L21/68735 , H01L21/68785 , Y10S156/915
摘要： A diameter of a mounting unit of the stage of an asking processing apparatus is less than a diameter of a mounting unit of the stage of an etching processing apparatus, and the diameter of the mounting unit of the stage of the etching processing apparatus is less than a diameter of an objective item.
摘要翻译：询问处理装置的台的安装单元的直径小于蚀刻处理装置的台的安装单元的直径，并且蚀刻处理装置的台的安装单元的直径小于客观物品的直径。

34. 发明申请

US20110100555A1 Semiconductor Device Manufacturing Apparatus Capable Of Reducing Particle Contamination 审中-公开
标题翻译：具有降低粒子污染的半导体器件制造装置
公开(公告)号：US20110100555A1
公开(公告)日：2011-05-05
申请号：US12987448
申请日：2011-01-10
申请人： Hiroyuki Kobayashi , Kenji Maeda , Kenetsu Yokogawa , Masaru Izawa
发明人： Hiroyuki Kobayashi , Kenji Maeda , Kenetsu Yokogawa , Masaru Izawa
IPC分类号： C23F1/08 , C23C16/455 , C23C16/52 , C23C16/44
CPC分类号： C23C16/4401 , H01J37/32091 , H01J37/32678 , H01J2237/022
摘要： A semiconductor device manufacturing apparatus includes a process chamber, a conveyance chamber, a conveyance robot, a lock chamber, and a heating unit or temperature adjusting unit for reducing adherence of particles onto a substance to be processed by a thermo-phoretic force. The heating unit enables control of a temperature of the substance to be processed to be higher than a temperature of an inner wall or structural body of the process chamber or the conveyance chamber or the conveyance robot or the lock chamber, in conveying the substance to be processed. The temperature adjusting unit enables adjustment of a temperature of an inner wall or structural body of the process chamber or the conveyance chamber or the lock chamber to be lower than a temperature of the substance to be processed, in conveying the substance to be processed.
摘要翻译：半导体器件制造装置包括处理室，输送室，输送机器人，锁定室以及加热单元或温度调节单元，用于减少通过热电解力将颗粒附着到被处理物质上。加热单元能够将被处理物质的温度控制为高于处理室或输送室或输送机器人或锁定室的内壁或结构体的温度，将物质输送为处理。温度调节单元能够在输送待处理物质时将处理室或输送室或锁定室的内壁或结构体的温度调节为低于待处理物质的温度。

35. 发明授权

US07918945B2 Method for manufacturing surface treated steel material using a chemical conversion treatment liquid 有权
标题翻译：使用化学转化处理液制造表面处理钢材的方法
公开(公告)号：US07918945B2
公开(公告)日：2011-04-05
申请号：US10771294
申请日：2004-02-05
申请人： Masaru Izawa , Kunio Goto
发明人： Masaru Izawa , Kunio Goto
IPC分类号： C23C22/08 , C23C22/00
CPC分类号： C23C22/08 , C23C22/00 , C23C22/12 , C23C22/18 , Y10T428/13 , Y10T428/264 , Y10T428/265
摘要： A method of manufacturing a surface treated oil well pipe comprising performing chemical conversion treatment on an oil well pipe having a steel composition containing 0.5-13% Cr using a chemical conversion treatment liquid containing zinc and phosphoric acid or manganese and phosphoric acid and further containing potassium tetraborate to form a chemical conversion film of a zinc-phosphate type or a manganese phosphate type, wherein the chemical conversion treatment is carried out in the absence of fluoride ions.
摘要翻译：一种表面处理油井管的制造方法，其特征在于，在使用含有锌，磷酸或锰，磷酸的化学转化处理液的含有0.5-13％Cr的钢组成的油井管上进行化学转化处理，四硼酸盐以形成磷酸锌型或磷酸锰型的化学转化膜，其中化学转化处理在不存在氟离子的情况下进行。

36. 发明申请

US20100006225A1 Plasma processing apparatus 审中-公开
标题翻译：等离子体处理装置
公开(公告)号：US20100006225A1
公开(公告)日：2010-01-14
申请号：US12230464
申请日：2008-08-29
申请人： Kanetsu Yokogawa , Hiroyuki Kobayashi , Takumi Tandou , Kenji Maeda , Masaru Izawa
发明人： Kanetsu Yokogawa , Hiroyuki Kobayashi , Takumi Tandou , Kenji Maeda , Masaru Izawa
IPC分类号： C23F1/08
CPC分类号： H01J37/32642 , H01J37/32651 , H01J37/32935
摘要： To make it possible to suppress deterioration of processing properties of a sample to be processed due to the distortion of ion sheath at the end portion of the sample to be processed or possible to maintain the condition for suppressing the deterioration, so that the acquisition rate of acceptable products can be increased, so as to thereby improve the yield. In a plasma processing apparatus, a minute hole 10 is provided in a focus ring 9 in the vicinity of the inner circumferential portion thereof. Current detecting means 11 is arranged in the bottom portion of the minute hole 10. A high-frequency power is supplied to the focus ring 9 via high-frequency power distributing means 16. A state of distortion of an ion sheath 18 is detected from an amount of current which is changed according to the amount of the high-frequency power supplied to the focus ring 9 and which is detected by current detecting means 11. Further, the amount of high-frequency power supplied to the focus ring 9 is controlled by a control section 21 so as to correct the detected distortion state.
摘要翻译：为了能够抑制由于待处理样品的端部处的离子鞘的变形而导致的待处理样品的加工性能的劣化，或者可以维持抑制劣化的条件，从而使得可以提高可接受的产品，从而提高产量。在等离子体处理装置中，微孔10设置在聚焦环9的内周部附近。电流检测装置11布置在微孔10的底部。高频功率通过高频功率分配装置16提供给聚焦环9.离子鞘18的变形状态从根据提供给对焦环9的高频功率的量而改变并由电流检测装置11检测的电流量。此外，提供给聚焦环9的高频功率的量由控制部分21，以校正检测到的失真状态。

37. 发明申请

US20090250000A1 VACUUM PROCESSING APPARATUS 审中-公开
标题翻译：真空加工设备
公开(公告)号：US20090250000A1
公开(公告)日：2009-10-08
申请号：US12193815
申请日：2008-08-19
申请人： Hiroyuki Kobayashi , Kazuyuki Ono , Kenji Maeda , Masaru Izawa , Kenetsu Yokogawa
发明人： Hiroyuki Kobayashi , Kazuyuki Ono , Kenji Maeda , Masaru Izawa , Kenetsu Yokogawa
IPC分类号： C23C14/00 , F04B49/00
CPC分类号： H01L21/67201 , Y10T137/85986
摘要： A vacuum processing apparatus capable of attaining compatibility between the decrease for the number of foreign particles deposited on a sample in a lock chamber and improvement of the throughput, in which an open speed controllable valve is disposed and the depressurization speed can be controlled automatically by a controlling computer.
摘要翻译：一种真空处理装置，其能够获得在锁定室中沉积在样品上的异物的数量的减少与提高打开速度可控阀的通过量之间的相容性，并且可以通过以下步骤自动控制减压速度控制电脑。

38. 发明申请

US20080319709A1 DIMENSION MEASURING APPARATUS AND DIMENSION MEASURING METHOD FOR SEMICONDUCTOR DEVICE 有权
标题翻译：尺寸测量装置和半导体器件的尺寸测量方法
公开(公告)号：US20080319709A1
公开(公告)日：2008-12-25
申请号：US12128364
申请日：2008-05-28
申请人： Masaru KURIHARA , Masaru Izawa , Junichi Tanaka
发明人： Masaru KURIHARA , Masaru Izawa , Junichi Tanaka
IPC分类号： G01B21/00
CPC分类号： H01L22/12 , H01J2237/2813
摘要： A dimension of a specific part of a semiconductor device is measured with high accuracy and at a high speed.The invention provides a dimension measuring apparatus used for measuring a dimension of a semiconductor device having a first pattern of repeated structure and a second pattern that is linear and formed on the first pattern to extend over the repeated structure. The dimension measuring apparatus comprises: a shape information acquisition means, which acquires information on a shape of the first pattern; a width value acquisition means, which acquires a width value of each portion of the second pattern on a basis of an observation result of the second pattern by a microscope; an analytic area setting means, which sets a plurality of analytic areas on the second pattern such that the analytic areas are adapted for the first pattern's shape acquired by the shape information acquisition means; and a dimension determining means, which extracts, for each of the set analytic areas, width values of portions included in the analytic area in question out of width values acquired by the width value acquisition means, and uses the extracted width values to determine a dimension of the second pattern at portions overlapping the first pattern.
摘要翻译：半导体器件的特定部分的尺寸以高精度和高速度被测量。本发明提供了一种用于测量具有重复结构的第一图案的半导体器件的尺寸的尺寸测量装置，以及线性形成在第一图案上以在重复结构上延伸的第二图案。尺寸测量装置包括：形状信息获取装置，其获取关于第一图案的形状的信息; 宽度值获取装置，其基于通过显微镜的第二图案的观察结果获取第二图案的每个部分的宽度值; 分析区域设置装置，其在第二图案上设置多个分析区域，使得分析区域适于由形状信息获取装置获取的第一图案的形状; 以及维度确定装置，其针对每个所设定的分析区域提取由所述宽度值获取装置获取的宽度值中包含在所述分析区域中的部分的宽度值，并且使用所提取的宽度值来确定尺寸在与第一图案重叠的部分处的第二图案。

39. 发明申请

US20080277061A1 WAFER EDGE CLEANER 审中-公开
公开(公告)号：US20080277061A1
公开(公告)日：2008-11-13
申请号：US11835463
申请日：2007-08-08
申请人： Hiroyuki Kobayashi , Kenji Maeda , Masaru Izawa , Kenetsu Yokogawa
发明人： Hiroyuki Kobayashi , Kenji Maeda , Masaru Izawa , Kenetsu Yokogawa
IPC分类号： H01L21/306 , G06F19/00
CPC分类号： H01L21/02087 , B08B7/0042 , H01L21/67028
摘要： An object of the present invention is to provide a wafer edge cleaner which is capable of removing an undesired material that adheres to an outer periphery of an object to be processed at the low costs and with high throughput. The wafer edge cleaner according to the present invention irradiates a deposited material that has adhered to the rear surface outer periphery of the object to be processed with a laser beam that is at least 30 kW/mm2 in the peak power density.
摘要翻译：本发明的目的是提供一种晶片边缘清洁器，其能够以低成本和高产量去除附着在被处理物体的外周的不需要的材料。根据本发明的晶片边缘清洁器用在其中的至少30kW / mm 2的激光束照射附着在待处理物体的后表面外周的沉积材料峰值功率密度。

40. 发明申请

US20080223522A1 PLASMA PROCESSING APPARATUS 审中-公开
标题翻译：等离子体加工设备
公开(公告)号：US20080223522A1
公开(公告)日：2008-09-18
申请号：US11835455
申请日：2007-08-08
申请人： Hiroyuki Kobayashi , Kenetsu Yokogawa , Masaru Izawa
发明人： Hiroyuki Kobayashi , Kenetsu Yokogawa , Masaru Izawa
IPC分类号： H01L21/306
CPC分类号： H01L21/67248 , H01J37/32091 , H01J37/32935 , H01J37/32963
摘要： The present invention provides a plasma processing chamber mounted with a function capable of determining the state of a temperature rise in a processing chamber even if a thermometer is not mounted in the processing chamber. In a plasma processing apparatus including: a processing chamber for subjecting a sample to be processed to plasma processing; means for supplying the processing chamber with gas; exhaust means for reducing pressure in the processing chamber; a high-frequency power source for generating plasma; and an electrode on which the sample to be processed is placed, there is provided a plasma emission monitor for determining an end point of temperature raise discharge and means for determining an end point of temperature raise discharge, both of which are used for determining an end point of temperature raise discharge performed before the plasma processing.
摘要翻译：本发明提供了一种等离子体处理室，即使温度计没有安装在处理室中也能够确定处理室中的温度上升的状态。一种等离子体处理装置，包括：处理室，用于对待处理的样品进行等离子体处理; 用于向处理室供应气体的装置; 用于减少处理室中的压力的排气装置; 用于产生等离子体的高频电源; 和放置有待处理样品的电极，设置有用于确定升温放电终点的等离子体发射监测器和用于确定升温放电终点的装置，两者用于确定终点在等离子体处理之前进行的升温放电点。

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