专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

31. 发明申请

US20110111339A1 BILAYER SYSTEMS INCLUDING A POLYDIMETHYLGLUTARIMIDE-BASED BOTTOM LAYER AND COMPOSITIONS THEREOF 有权
标题翻译：双层系统，其中包括基于聚二甲基硅氧烷的底层及其组合物
公开(公告)号：US20110111339A1
公开(公告)日：2011-05-12
申请号：US12613800
申请日：2009-11-06
申请人： Joy Cheng , Ho-Cheol Kim , Hiroshi Ito , Atsuko Ito , Hoa D. Truong
发明人： Joy Cheng , Ho-Cheol Kim , Hiroshi Ito , Atsuko Ito , Hoa D. Truong
IPC分类号： G03F7/004 , G03F7/20
CPC分类号： G03F7/091 , G03F7/0392 , G03F7/095
摘要： Bilayer systems include a bottom layer formed of polydimethylglutarimide, an acid labile dissolution inhibitor and a photoacid generator. The bilayer system can be exposed and developed in a single exposure and development process.
摘要翻译：双层体系包括由聚二甲基戊二酰亚胺形成的底层，酸不稳定溶解抑制剂和光酸产生剂。双层系统可以在单一的曝光和开发过程中暴露和发展。

32. 发明授权

US07828986B2 Forming surface features using self-assembling masks 有权
标题翻译：使用自组装掩模形成表面特征
公开(公告)号：US07828986B2
公开(公告)日：2010-11-09
申请号：US11926722
申请日：2007-10-29
申请人： Joy Cheng , Mark W. Hart , Hiroshi Ito , Ho-Cheol Kim , Robert Miller
发明人： Joy Cheng , Mark W. Hart , Hiroshi Ito , Ho-Cheol Kim , Robert Miller
IPC分类号： B44C1/22 , H01L21/302
CPC分类号： H01L21/0337 , B81C1/00031 , B81C2201/0149 , B81C2201/0198 , H01L21/0271 , H01L21/0332
摘要： A method. A combination is provided of a block copolymer and additional material. The copolymer includes a first block of a first polymer covalently bonded to a second block of a second polymer. The additional material is miscible with the first polymer. The first polymer includes polystyrene and the second polymer includes poly(ethylene oxide). A first layer including polydimethylglutarimide is adhered onto a surface of a substrate including a dielectric coated silicon wafer. A film is formed of the combination directly onto a surface of the first layer. Nanostructures of the additional material self-assemble within the first polymer block. The film and the first layer are simultaneously etched. The nanostructures have an etch rate lower than an etch rate of the block copolymer and lower than an etch rate of the first layer. Portions of the film are removed. Features remain on the surface of the first layer.
摘要翻译：一个方法。提供了一种嵌段共聚物和另外的材料的组合。共聚物包括共价键合到第二聚合物的第二嵌段的第一聚合物的第一嵌段。附加材料与第一聚合物混溶。第一聚合物包括聚苯乙烯，第二聚合物包括聚（环氧乙烷）。包括聚二甲基戊二酰亚胺的第一层粘附到包括电介质涂覆的硅晶片的基材的表面上。该组合物直接由第一层的表面形成。附加材料的纳米结构在第一聚合物嵌段内自组装。同时蚀刻膜和第一层。纳米结构的蚀刻速率低于嵌段共聚物的蚀刻速率，并且低于第一层的蚀刻速率。部分电影被删除。特征保留在第一层的表面上。

33. 发明申请

US20160085896A1 METHOD FOR DESIGNING TOPOGRAPHIC PATTERNS FOR DIRECTING THE FORMATION OF SELF-ASSEMBLED DOMAINS AT SPECIFIED LOCATIONS ON SUBSTRATES 有权
标题翻译：用于指定在基底上指定位置形成自组装域的地形图案的方法
公开(公告)号：US20160085896A1
公开(公告)日：2016-03-24
申请号：US13472598
申请日：2012-05-16
申请人： Joy Cheng , Kafai Lai , Chi-Chun Liu , Jed W. Pitera , Charles T. Rettner
发明人： Joy Cheng , Kafai Lai , Chi-Chun Liu , Jed W. Pitera , Charles T. Rettner
IPC分类号： G06F17/50
CPC分类号： G06F17/5068 , G03F7/0002 , G06F2217/08
摘要： Methods and computer program products for designing topographic patterns for directing the formation of self-assembled domains at specified locations on substrates. The methods include generating mathematical models that operate on mathematical descriptions of the number and locations of cylindrical self-assembled domains in a mathematical description of a guiding pattern.
摘要翻译：方法和计算机程序产品，用于设计用于指导在基板上的指定位置形成自组装域的地形图案。所述方法包括在引导模式的数学描述中生成对圆柱形自组装域的数量和位置的数学描述进行操作的数学模型。

34. 发明授权

US08821978B2 Methods of directed self-assembly and layered structures formed therefrom 有权
标题翻译：定向自组装方法和从其形成的分层结构
公开(公告)号：US08821978B2
公开(公告)日：2014-09-02
申请号：US12641959
申请日：2009-12-18
申请人： Joy Cheng , William D. Hinsberg , Ho-Cheol Kim , Young-Hye Na , Daniel Paul Sanders , Linda Karin Sundberg , Hoa D. Truong , Gregory Michael Wallraff , Atsuko Ito
发明人： Joy Cheng , William D. Hinsberg , Hiroshi Ito , Ho-Cheol Kim , Young-Hye Na , Daniel Paul Sanders , Linda Karin Sundberg , Hoa D. Truong , Gregory Michael Wallraff
IPC分类号： B32B3/10 , G03F7/16 , G03F7/38 , G03F7/40 , G03F7/30
CPC分类号： B82Y40/00 , B81C1/00031 , B81C2201/0149 , G03F7/0392 , G03F7/09 , G03F7/091 , G03F7/165 , G03F7/325 , G03F7/327 , G03F7/40
摘要： A method of forming a layered structure comprising a domain pattern of a self-assembled material utilizes a negative-tone patterned photoresist layer comprising non-crosslinked developed photoresist. The developed photoresist is not soluble in an organic casting solvent for a material capable of self-assembly. The developed photoresist is soluble in an aqueous alkaline developer and/or a second organic solvent. A solution comprising the material capable of self-assembly and the organic casting solvent is casted on the patterned photoresist layer. Upon removal of the organic casting solvent, the material self-assembles, thereby forming the layered structure.
摘要翻译：形成包括自组装材料的畴图案的分层结构的方法利用包含非交联显影光致抗蚀剂的负色调图案化光致抗蚀剂层。显影的光致抗蚀剂不溶于用于能够自组装的材料的有机浇铸溶剂中。显影的光致抗蚀剂可溶于含水碱性显影剂和/或第二有机溶剂。将包含能够自组装的材料和有机浇铸溶剂的溶液浇铸在图案化的光致抗蚀剂层上。在去除有机浇注溶剂时，材料自组装，从而形成层状结构。

35. 发明授权

US08734904B2 Methods of forming topographical features using segregating polymer mixtures 有权
标题翻译：使用分离聚合物混合物形成地形特征的方法
公开(公告)号：US08734904B2
公开(公告)日：2014-05-27
申请号：US12957008
申请日：2010-11-30
申请人： Joy Cheng , Hayato Namai , Charles Thomas Rettner , Daniel Paul Sanders , Ratnam Sooriyakumaran
发明人： Joy Cheng , Hayato Namai , Charles Thomas Rettner , Daniel Paul Sanders , Ratnam Sooriyakumaran
IPC分类号： B81C1/00 , B82Y40/00 , H01L21/027
CPC分类号： B81C1/00031 , B81C2201/0149 , H01L21/0337 , H01L21/0338
摘要： Methods are disclosed for forming topographical features. In one method, a pre-patterned structure is provided which comprises i) a support member having a surface and ii) an element for topographically guiding segregation of a polymer mixture including a first polymer and a second polymer, the element comprising a feature having a sidewall adjoined to the surface. The polymer mixture is disposed on the pre-patterned structure, wherein the disposed polymer mixture has contact with the sidewall and the surface. The first polymer and the second polymer are segregated in a plane parallel to the surface, thereby forming a segregated structure comprising a first polymer domain and a second polymer domain. The first polymer domain and/or the second polymer domain are lithographically patterned, thereby forming topographical features comprising at least one of i) a first feature comprising a lithographically patterned first polymer domain and ii) a second feature comprising a lithographically patterned second polymer domain.
摘要翻译：公开了形成形貌特征的方法。在一种方法中，提供预先图案化的结构，其包括i）具有表面的支撑构件和ii）用于拓扑地引导包括第一聚合物和第二聚合物的聚合物混合物的偏析的元件，所述元件包括具有侧壁与表面相邻。聚合物混合物设置在预图案化结构上，其中所设置的聚合物混合物与侧壁和表面接触。第一聚合物和第二聚合物在平行于表面的平面中分离，从而形成包含第一聚合物结构域和第二聚合物结构域的分离结构。第一聚合物结构域和/或第二聚合物结构域被光刻图案化，从而形成包括以下至少一个的拓扑特征：i）包含光刻图案化的第一聚合物结构域的第一特征和ii）包含光刻图案化的第二聚合物结构域的第二特征。

36. 发明授权

US08623458B2 Methods of directed self-assembly, and layered structures formed therefrom 有权
标题翻译：定向自组装的方法和由其形成的分层结构
公开(公告)号：US08623458B2
公开(公告)日：2014-01-07
申请号：US12642018
申请日：2009-12-18
申请人： Joy Cheng , Matthew E. Colburn , Stefan Harrer , William D. Hinsberg , Steven J. Holmes , Ho-Cheol Kim , Daniel Paul Sanders
发明人： Joy Cheng , Matthew E. Colburn , Stefan Harrer , William D. Hinsberg , Steven J. Holmes , Ho-Cheol Kim , Daniel Paul Sanders
IPC分类号： B81C1/00 , C08J5/18 , C08J5/00
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00
摘要： A layered structure comprising a self-assembled material is formed by a method that includes forming a photochemically, thermally and/or chemically treated patterned photoresist layer disposed on a first surface of a substrate. The treated patterned photoresist layer comprises a non-crosslinked treated photoresist. An orientation control material is cast on the treated patterned photoresist layer, forming a layer containing orientation control material bound to a second surface of the substrate. The treated photoresist and, optionally, any non-bound orientation control material are removed by a development process, resulting in a pre-pattern for self-assembly. A material capable of self-assembly is cast on the pre-pattern. The casted material is allowed to self-assemble with optional heating and/or annealing to produce the layered structure.
摘要翻译：包括自组装材料的层状结构通过包括形成设置在衬底的第一表面上的光化学，热和/或化学处理的图案化光致抗蚀剂层的方法形成。经处理的图案化光刻胶层包括非交联处理的光致抗蚀剂。将取向控制材料浇铸在经处理的图案化的光致抗蚀剂层上，形成包含与基材的第二表面结合的取向控制材料的层。经处理的光致抗蚀剂和任选的任何未结合的取向控制材料通过显影过程被去除，从而形成用于自组装的预图案。能够自组装的材料在预制图案上铸造。允许铸造材料通过任选的加热和/或退火自组装以产生分层结构。

37. 发明授权

US08529779B2 Methods for forming surface features using self-assembling masks 有权
标题翻译：使用自组装掩模形成表面特征的方法
公开(公告)号：US08529779B2
公开(公告)日：2013-09-10
申请号：US12057565
申请日：2008-03-28
申请人： Joy Cheng , Mark W. Hart , Hiroshi Ito , Ho-Cheol Kim , Robert Miller
发明人： Joy Cheng , Mark W. Hart , Hiroshi Ito , Ho-Cheol Kim , Robert Miller
IPC分类号： B31D3/00 , C03C15/00 , C03C25/68 , C23F1/00 , H01L21/302
CPC分类号： H01L21/0337 , B81C1/00031 , B81C2201/0149 , B81C2201/0198 , H01L21/0271 , H01L21/0332
摘要： A method for producing surface features and an etch masking method. A combination is provided of a block copolymer and additional material. The block copolymer includes a first block of a first polymer covalently bonded to a second block of a second polymer. The additional material is miscible with the first polymer. A film is formed of the combination directly onto a surface of a first layer. Nanostructures of the additional material self-assemble within the first polymer block. The film of the combination and the first layer are etched. The nanostructures have an etch rate lower than an etch rate of the block copolymer and lower than an etch rate of the first layer. The film is removed and features remain on the surface of the first layer. Also included is an etch masking method where the nanostructures mask portions of the first layer from said etchant.
摘要翻译：一种用于产生表面特征的方法和蚀刻掩模方法。提供了一种嵌段共聚物和另外的材料的组合。嵌段共聚物包括共价键合到第二聚合物的第二嵌段的第一聚合物的第一嵌段。附加材料与第一聚合物混溶。膜由直接形成在第一层的表面上。附加材料的纳米结构在第一聚合物嵌段内自组装。蚀刻组合和第一层的膜。纳米结构的蚀刻速率低于嵌段共聚物的蚀刻速率，并且低于第一层的蚀刻速率。去除膜并且特征保留在第一层的表面上。还包括蚀刻掩模法，其中纳米结构掩盖了来自所述蚀刻剂的第一层的部分。

38. 发明申请

US20120331428A1 METHOD FOR DESIGNING OPTICAL LITHOGRAPHY MASKS FOR DIRECTED SELF-ASSEMBLY 有权
标题翻译：用于指导自组装的光学绘图掩模的方法
公开(公告)号：US20120331428A1
公开(公告)日：2012-12-27
申请号：US13606055
申请日：2012-09-07
申请人： Joy Cheng , Kafai Lai , Wai-Kin Li , Young-Hye Na , Jed Walter Pitera , Charles Thomas Rettner , Daniel Paul Sanders , Da Yang
发明人： Joy Cheng , Kafai Lai , Wai-Kin Li , Young-Hye Na , Jed Walter Pitera , Charles Thomas Rettner , Daniel Paul Sanders , Da Yang
IPC分类号： G06F17/50
CPC分类号： G03F1/38 , B82Y10/00 , B82Y40/00 , G03F1/00 , G03F7/0002
摘要： A method and a computer system for designing an optical photomask for forming a prepattern opening in a photoresist layer on a substrate wherein the photoresist layer and the prepattern opening are coated with a self-assembly material that undergoes directed self-assembly to form a directed self-assembly pattern. The methods includes: generating a mask design shape from a target design shape; generating a sub-resolution assist feature design shape based on the mask design shape; using a computer to generate a prepattern shape based on the sub-resolution assist feature design shape; and using a computer to evaluate if a directed self-assembly pattern of the self-assembly material based on the prepattern shape is within specified ranges of dimensional and positional targets of the target design shape on the substrate.
摘要翻译：一种用于设计光学掩模的方法和计算机系统，用于在基底上的光致抗蚀剂层中形成预模式开口，其中光致抗蚀剂层和预图案开口用自组装材料涂覆，所述自组装材料经过定向自组装以形成定向自身装配模式所述方法包括：从目标设计形状生成掩模设计形状; 基于掩模设计形状产生子分辨率辅助特征设计形状; 使用计算机基于子分辨率辅助特征设计形状生成预绘图形状; 并且使用计算机来评估基于预图案形状的自组装材料的定向自组装图案是否在基板上的目标设计形状的尺寸和位置目标的指定范围内。

39. 发明申请

US20120028476A1 METHOD OF FORMING SEMICONDUCTOR STRUCTURES WITH CONTACT HOLES 有权
标题翻译：形成具有接触角的半导体结构的方法
公开(公告)号：US20120028476A1
公开(公告)日：2012-02-02
申请号：US12846020
申请日：2010-07-29
申请人： Wai-Kin Li , Wu-Song Huang , Joy Cheng , Kuang-Jung Chen
发明人： Wai-Kin Li , Wu-Song Huang , Joy Cheng , Kuang-Jung Chen
IPC分类号： H01L21/312
CPC分类号： H01L21/0337 , H01L21/0338
摘要： Embodiments of the present invention provide a method of forming a semiconductor structure. The method includes forming a set of shapes on top of a substrate; applying a layer of copolymer covering the substrate; causing the copolymer to form a plurality of cylindrical blocks both inside and outside the shapes; forming a pattern of contact holes from the plurality of cylindrical blocks; and transferring the pattern of contact holes to the substrate to form the semiconductor structure. In one embodiment, the shapes are rings and forming the set of shapes includes forming a set of rings that are equally and squarely spaced. In another embodiment, causing the copolymer to form the plurality of cylindrical blocks includes forming only one cylindrical block inside each of the rings and only one cylindrical block outside every four (4) squarely neighboring rings.
摘要翻译：本发明的实施例提供一种形成半导体结构的方法。该方法包括在衬底的顶部上形成一组形状; 涂覆覆盖基材的共聚物层; 使共聚物在形状内部和外部形成多个圆柱形块; 从所述多个圆柱形块形成接触孔的图案; 并将接触孔的图案转移到衬底以形成半导体结构。在一个实施例中，形状是环，并且形成一组形状包括形成均匀且平直间隔的一组环。在另一个实施方案中，使共聚物形成多个圆柱形块包括仅在每个环内形成一个圆柱形块，并且在每四（4）个正方形相邻的环周围仅形成一个圆柱形块。

40. 发明授权

US09449822B2 Method of forming semiconductor structures with contact holes 有权
标题翻译：形成具有接触孔的半导体结构的方法
公开(公告)号：US09449822B2
公开(公告)日：2016-09-20
申请号：US12846020
申请日：2010-07-29
申请人： Wai-Kin Li , Wu-Song Huang , Joy Cheng , Kuang-Jung Chen
发明人： Wai-Kin Li , Wu-Song Huang , Joy Cheng , Kuang-Jung Chen
IPC分类号： H01L21/033
CPC分类号： H01L21/0337 , H01L21/0338
摘要： Embodiments of the present invention provide a method of forming a semiconductor structure. The method includes forming a set of shapes on top of a substrate; applying a layer of copolymer covering the substrate; causing the copolymer to form a plurality of cylindrical blocks both inside and outside the shapes; forming a pattern of contact holes from the plurality of cylindrical blocks; and transferring the pattern of contact holes to the substrate to form the semiconductor structure. In one embodiment, the shapes are rings and forming the set of shapes includes forming a set of rings that are equally and squarely spaced. In another embodiment, causing the copolymer to form the plurality of cylindrical blocks includes forming only one cylindrical block inside each of the rings and only one cylindrical block outside every four (4) squarely neighboring rings.
摘要翻译：本发明的实施例提供一种形成半导体结构的方法。该方法包括在衬底的顶部上形成一组形状; 涂覆覆盖基材的共聚物层; 使共聚物在形状内部和外部形成多个圆柱形块; 从所述多个圆柱形块形成接触孔的图案; 并将接触孔的图案转移到衬底以形成半导体结构。在一个实施例中，形状是环，并且形成一组形状包括形成均匀且平直间隔的一组环。在另一个实施方案中，使共聚物形成多个圆柱形块包括仅在每个环内形成一个圆柱形块，并且在每四（4）个正方形相邻的环周围仅形成一个圆柱形块。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式