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31. 发明授权

US5569628A Semiconductor device fabrication method 失效
标题翻译：半导体器件制造方法
公开(公告)号：US5569628A
公开(公告)日：1996-10-29
申请号：US535323
申请日：1995-09-27
申请人： Kousaku Yano , Tomoyasu Murakami , Masayuki Endo , Noboru Nomura
发明人： Kousaku Yano , Tomoyasu Murakami , Masayuki Endo , Noboru Nomura
IPC分类号： H01L21/28 , H01L21/768 , H01L21/465
CPC分类号： H01L21/76841 , H01L21/76843
摘要： A silicon dioxide film is partly etched away to form an opening thereby exposing a silicon substrate. The surface of the opening, which is almost entirely covered with Si-OH, is coated with hexamethyldisilazane (HMDS) to bring about a silylation reaction. This causes the silicon substrate surface to be covered with a molecular film formed by replacing the hydrogen part in Si-OH with Si((CH.sub.3).sub.3. Atoms of aluminum are ejected by a sputtering process. The ejected aluminum atoms collide with the molecular film. Although some hydrocarbons (CH.sub.x) are sputtered or ejected due to such collision, a SiO.sub.x C.sub.y H.sub.z film 12' transformed from the molecular film is left between an aluminum film deposited and the silicon substrate. This SiO.sub.x C.sub.y H.sub.z film 12' acts as a barrier metal. The presence of the SiO.sub.x C.sub.y H.sub.z film prevents the occurrence of counter diffusion in the Al-Si system. No spikes are formed as a result.
摘要翻译：部分地蚀刻掉二氧化硅膜以形成开口，从而暴露硅衬底。几乎完全用Si-OH覆盖的开口的表面涂覆有六甲基二硅氮烷（HMDS）以进行甲硅烷基化反应。这导致硅衬底表面被用Si（（CH 3）3代替Si-OH中的氢部分而形成的分子膜覆盖，铝的原子通过溅射工艺喷射，喷射的铝原子与分子膜碰撞虽然由于这种碰撞而使一些烃类（CHx）溅射或喷射，但是从分子膜转化的SiO x C y H z膜12'留在沉积的铝膜和硅基板之间，该SiOxCyHz膜12'作为阻挡金属， SiOxCyHz膜的存在防止了在Al-Si系统中产生反向扩散，结果不形成尖峰。

32. 发明授权

US5527662A Process for forming fine pattern 失效
标题翻译：形成精细图案的工艺
公开(公告)号：US5527662A
公开(公告)日：1996-06-18
申请号：US185237
申请日：1994-01-24
申请人： Kazuhiko Hashimoto , Noboru Nomura
发明人： Kazuhiko Hashimoto , Noboru Nomura
IPC分类号： G03F7/004 , G03F7/038 , G03F7/039 , G03F7/09 , G03F7/20 , H01L21/027 , H01L21/30 , G03C5/00 , G03F7/38 , G03F7/40
CPC分类号： G03F7/039 , G03F7/038 , G03F7/094 , G03F7/2059 , Y10S430/143 , Y10S438/949
摘要： In a process using a single-layer or multi-layer resist, by using a resist material comprising an acid-decomposable polymer, an acid generator and a conducting polymer or a resist material comprising a monomer to be made reactive by an acid, an acid generator and a conducting polymer, there can be formed a fine pattern precisely without inviting charging during charged beam writing.
摘要翻译：在使用单层或多层抗蚀剂的方法中，通过使用包含酸可分解聚合物，酸产生剂和导电聚合物的抗蚀剂材料或包含由酸反应的单体的抗蚀材料，酸发电机和导电聚合物，可以精确地形成精细图案，而不会在带电波束写入期间带电充电。

33. 发明授权

US5332880A Method and apparatus for generating highly dense uniform plasma by use of a high frequency rotating electric field 失效
标题翻译：通过使用高频旋转电场产生高密度均匀等离子体的方法和装置
公开(公告)号：US5332880A
公开(公告)日：1994-07-26
申请号：US40348
申请日：1993-03-30
申请人： Masafumi Kubota , Kenji Harafuji , Tokuhiko Tamaki , Mitsuhiro Ohkuni , Noboru Nomura , Ichiro Nakayama
发明人： Masafumi Kubota , Kenji Harafuji , Tokuhiko Tamaki , Mitsuhiro Ohkuni , Noboru Nomura , Ichiro Nakayama
IPC分类号： C23C16/509 , H01J37/32 , H05H1/46 , B23K9/00 , H01L21/306
CPC分类号： H01J37/32091 , C23C16/509 , H01J37/32165 , H01J37/32623 , H05H1/46 , Y10S977/724 , Y10S977/844
摘要： At lateral sides of a plasma generating part under a vacuum, first to fourth lateral electrodes are so disposed as to surround the plasma generating part. High frequency electric power is supplied to the first lateral electrode from a first high frequency power supply, high frequency electric power is supplied to the second lateral electrode from the first high frequency power supply through a first delay circuit, high frequency electric power is supplied to the third lateral electrode from the first high frequency power supply through the first delay circuit and through a second delay circuit, and high frequency electric power is supplied to the fourth lateral electrode from the first high frequency power supply through the first and second delay circuits and through a third delay circuit. Accordingly, there are respectively applied, to the first to fourth lateral electrodes, the high frequency electric powers of which frequencies are equal to one another and of which phases are successively different from one another, and there is excited, in the plasma generating part, a rotational electric field to cause electrons in the plasma generating part to present rotational motions.
摘要翻译：在真空下的等离子体产生部分的侧面，第一至第四横向电极被设置成围绕等离子体产生部分。从第一高频电源向第一横向电极提供高频电力，通过第一延迟电路从第一高频电源向第二横向电极提供高频电力，将高频电力供给至来自第一高频电源的第三横向电极通过第一延迟电路和第二延迟电路，并且高频电力通过第一和第二延迟电路从第一高频电源提供给第四横向电极;以及通过第三个延迟电路。因此，分别向第一至第四横向电极施加频率彼此相等且相位相互不同的高频电力，并且在等离子体产生部分中激发，使等离子体产生部中的电子产生旋转运动的旋转电场。

34. 再颁专利

USRE33669E Aligning exposure method 失效
标题翻译：调整曝光方式
公开(公告)号：USRE33669E
公开(公告)日：1991-08-20
申请号：US296721
申请日：1989-01-12
申请人： Noboru Nomura , Koichi Kugimiya , Takayoshi Matsumura , Taketoshi Yonezawa
发明人： Noboru Nomura , Koichi Kugimiya , Takayoshi Matsumura , Taketoshi Yonezawa
IPC分类号： G03F7/20 , G03F9/00
CPC分类号： G03F9/7049 , G03F7/70408 , G03F9/7076
摘要： Disclosed .[.in.]. .Iadd.is .Iaddend.an aligning and exposing method suitable for use in the production of LSIs. Coherent ray beams are applied from two directions to form .Iadd.an .Iaddend.interference fringe through interference of the coherent rays. A diffraction grid is disposed in the optic paths of the ray beams substantially in parallel with the interference fringe. The ray beams reflected .[.and.]. .Iadd.or .Iaddend.transmitted by the grid are converged by a lens system and the intensities of the ray beams are measured to detect the relative position between the interference fringe formed by two coherent ray beams and the diffraction grid, thereby to permit a highly accurate alignment of fine semiconductor element. The pitch of the grid on the substrate is selected to be n (n being an integer) times as large as the pitch of the interference fringe, so that the grid for alignment purpose is formed simultaneously with the formation of the LSI pattern by photolithographic technic. With this method, it is possible to attain a high degree of accuracy of alignment, and to conduct the subsequent exposure using the same ray beam source as that used for the alignment.

35. 发明授权

US4996123A Optically oriented photoresist pattern forming method using organic crystal in photoresist layer with specified refracting indices formula 失效
$Optically oriented photoresist pattern forming method using organic crystal in photoresist layer with specified refracting indices formula$
标题翻译：光致抗蚀剂图案形成方法使用光刻胶层中有机晶体，具有指定的折射率公式
公开(公告)号：US4996123A
公开(公告)日：1991-02-26
申请号：US326414
申请日：1989-02-24
申请人： Noboru Nomura , Atsushi Ueno , Kazuhiko Hashimoto , Satoshi Kinoshita
发明人： Noboru Nomura , Atsushi Ueno , Kazuhiko Hashimoto , Satoshi Kinoshita
IPC分类号： G03F7/004 , G03F7/008 , G03F7/09 , G03F7/20
CPC分类号： G03F7/091 , G03F7/004 , G03F7/0085 , G03F7/2057
摘要： An optically oriented photoresist material comprised of an organic polymer and an organic crystal material each having a different refractive index to form an optically oriented layer on a substrate wherein the optical waveguide is formed by an effect of the refractive index difference, and in said waveguide layer thus formed, the spread and scattering of lights are suppressed and very fine mask patterns of said photoresist can be produced.
摘要翻译：一种由有机聚合物和有机晶体材料组成的光学取向的光致抗蚀剂材料，它们各自具有不同的折射率，以在基板上形成光学取向层，其中光波导通过折射率差的作用形成，并且在所述波导层由此形成，抑制了光的扩散和散射，并且可以产生所述光致抗蚀剂的非常精细的掩模图案。

36. 发明授权

US4976818A Fine pattern forming method 失效
标题翻译：精细图案形成方法
公开(公告)号：US4976818A
公开(公告)日：1990-12-11
申请号：US520654
申请日：1990-04-24
申请人： Kazuhiko Hashimoto , Taichi Koizumi , Kenji Kawakita , Noboru Nomura
发明人： Kazuhiko Hashimoto , Taichi Koizumi , Kenji Kawakita , Noboru Nomura
IPC分类号： G03F7/004 , G03F7/09
CPC分类号： G03F7/094 , G03F7/004 , Y10S438/949
摘要： A fine pattern forming method capable of forming an accurate fine pattern without charge-up at the time of electron beam or focus ion beam exposure, by treating the bottom layer or intermediate layer or silicon containing resist of a multi-layer resist with ion shower irradiation or reducing solvent.
摘要翻译：通过用离子喷淋照射处理多层抗蚀剂的底层或中间层或含硅抗蚀剂，能够在电子束或聚焦离子束曝光时形成精细图案而不进行充电的精细图案形成方法或还原溶剂。

37. 发明授权

US4870289A Apparatus for controlling relation in position between a photomask and a wafer 失效
标题翻译：用于控制光掩模和晶片之间的位置关系的装置
公开(公告)号：US4870289A
公开(公告)日：1989-09-26
申请号：US248051
申请日：1988-09-23
申请人： Takeo Sato , Shinichiro Aoki , Katsumasa Yamaguchi , Tadashi Kaneko , Noboru Nomura , Keisuke Koga , Kazuhiro Yamashita
发明人： Takeo Sato , Shinichiro Aoki , Katsumasa Yamaguchi , Tadashi Kaneko , Noboru Nomura , Keisuke Koga , Kazuhiro Yamashita
IPC分类号： G03F9/00 , H01L21/68
CPC分类号： G03F9/7065 , G03F9/7049 , H01L21/682
摘要： A system for controlling the relation in position between a photomask and a wafer for use in manufacturing apparatus of a highly integrated circuit such as large scale integration (LSI). The position control system includes a coherent light source for generating two light beams which are different in frequency and polarizing direction from each other. The light beams from the coherent light source is introduced into a first diffraction grating and the diffracted light from the first diffraction grating selectively pass through a telecentric lens system and are led to second and third diffraction gratings respectively disposed on the photomask and the wafer. Light beat signals are obtained in correspondance with the diffracted light from the second and third difraction gratings and the position relation between the photomask and wafer is controlled on the basis of the phase difference between the obtained light beat signals which corresponds to the position difference between the photomask and the wafer.

38. 发明授权

US4771180A Exposure apparatus including an optical system for aligning a reticle and a wafer 失效
标题翻译：曝光装置包括用于对准掩模版和晶片的光学系统
公开(公告)号：US4771180A
公开(公告)日：1988-09-13
申请号：US916738
申请日：1986-10-08
申请人： Noboru Nomura , Kazuhiro Yamashita
发明人： Noboru Nomura , Kazuhiro Yamashita
IPC分类号： G03F9/00 , G01N21/86
CPC分类号： G03F9/7049
摘要： A reduction projection type alignment and exposure apparatus having a light source, for alignment, a reticle having at least a first grating, first lens system, a spatial filter disposed around a Fourier spectral plane of the first lens system, second lens system, a wafer having at least a second grating, and a photo-detector for detecting light intensity of superimposed beams appearing on the spatial filter. An optical system for light exposure is provided separately from the optical system for alignment which includes the light source for alignment, first and second lens system, spatial filter, etc. The light beam generated from the light source for alignment is applied to the reticle at which it is divided into a plurality of difracted light beams by the first grating, and the diffracted light beams are applied through the first lens system, spatial filter and second lens system onto the wafer so that the diffracted light beams are re-diffracted by the second grating, and the re-diffracted light beams are superimposed with the diffracted light beams and the light intensity of the superimposed beams detected by the photo-detector.
摘要翻译：一种缩小投影型对准和曝光装置，具有用于对准的光源，具有至少第一光栅的掩模版，第一透镜系统，设置在第一透镜系统的傅立叶光谱平面附近的空间滤光器，第二透镜系统，晶片具有至少第二光栅，以及用于检测出现在空间滤光片上的叠加光束的光强度的光检测器。与用于对准的光学系统分开设置用于曝光的光学系统，其包括用于对准的光源，第一和第二透镜系统，空间滤光器等。从用于对准的光源产生的光束被施加到掩模版将其通过第一光栅分割为多个衍射光束，并且将衍射光束通过第一透镜系统，空间滤光器和第二透镜系统施加到晶片上，使得衍射光束被衍射的光束并且再衍射光束与衍射光束叠加，并且由光检测器检测到的叠加光束的光强度。

39. 发明授权

US4422117A Thin film magnetic head and method of making it 失效
标题翻译：薄膜磁头及其制作方法
公开(公告)号：US4422117A
公开(公告)日：1983-12-20
申请号：US254662
申请日：1981-04-16
申请人： Noboru Nomura , Kenji Kanai , Nobuyuki Kaminaka , Norimoto Nouchi
发明人： Noboru Nomura , Kenji Kanai , Nobuyuki Kaminaka , Norimoto Nouchi
IPC分类号： G11B5/31 , G11B5/39 , G11B5/12 , G11B5/20 , G11B5/22
CPC分类号： G11B5/3903 , G11B5/3106 , G11B5/3163
摘要： A thin film magnetic head has a substrate with thin film layers deposited thereon and a protector layer bonded by a bonding layer to the substrate, with the thin film layers interposed therebetween. The thin film layers includes components of an electromagnetic transducing means. The bonding layer is a glass having a working temperature at which a magnetic layer included in the thin film layers does not have the magnetic characteristics deteriorated to any substantial degree.The fusing of the glass for making the bonding layer is performed at a temperature below 450.degree. C.
摘要翻译：薄膜磁头具有沉积有薄膜层的基板和通过粘结层粘合到基板上的保护层，其间插入有薄膜层。薄膜层包括电磁换能装置的部件。接合层是具有工作温度的玻璃，其中包括在薄膜层中的磁性层的磁特性不会在任何程度上劣化。用于制造粘合层的玻璃的熔合在450℃以下进行。

40. 发明授权

US4409632A Magnetic head arrangement 失效
标题翻译：磁头布置
公开(公告)号：US4409632A
公开(公告)日：1983-10-11
申请号：US208480
申请日：1980-11-19
申请人： Kenji Kanai , Nobuyuki Kaminaka , Norimoto Nouchi , Noboru Nomura
发明人： Kenji Kanai , Nobuyuki Kaminaka , Norimoto Nouchi , Noboru Nomura
IPC分类号： G11B5/31 , G11B5/20 , G11B5/22
CPC分类号： G11B5/313
摘要： A magnetic head arrangement includes a spiral coil made of a thin layer and having a central opening. The spiral coil is deposited on a first layer of magnetic material in an electrically insulated manner. The arrangement further includes a second layer of magnetic material having a width wider than that of the central opening of the spiral coil and deposited on the spiral coil in an electrically insulated manner. A portion of the second layer located in the central opening of the spiral coil is magnetically connected with the first layer and another portion of the second layer located outside the spiral coil is held above the first layer to form a predetermined gap.
摘要翻译：磁头装置包括由薄层制成并具有中心开口的螺旋线圈。螺旋线圈以电绝缘方式沉积在第一层磁性材料上。该装置还包括第二层磁性材料，其宽度大于螺旋线圈中心开口的宽度，并以电绝缘方式沉积在螺旋线圈上。位于螺旋线圈的中心开口中的第二层的一部分与第一层磁性连接，位于螺旋线圈外部的第二层的另一部分被保持在第一层上方以形成预定间隙。

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