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31. 发明申请

US20050194612A1 III-Nitride current control device and method of manufacture 有权
标题翻译： III型氮化物电流控制装置及其制造方法
公开(公告)号：US20050194612A1
公开(公告)日：2005-09-08
申请号：US11040312
申请日：2005-01-21
申请人： Robert Beach
发明人： Robert Beach
IPC分类号： H01L21/335 , H01L29/20 , H01L29/423 , H01L29/778 , H01L29/872 , H01L31/0328 , H01L31/0336
CPC分类号： H01L29/7787 , H01L29/2003 , H01L29/42316 , H01L29/66462 , H01L29/872
摘要： A III-nitride device includes a recessed electrode to produce a nominally off, or an enhancement mode, device. By providing a recessed electrode, a conduction channel formed at the interface of two III-nitride materials is interrupted when the electrode contact is inactive to prevent current flow in the device. The electrode can be a schottky contact or an insulated metal contact. Two ohmic contacts can be provided to form a rectifier device with nominally off characteristics. The recesses formed with the electrode can have sloped sides. The electrode can be formed in a number of geometries in conjunction with current carrying electrodes of the device. A nominally on device, or pinch resistor, is formed when the electrode is not recessed. A diode is also formed by providing non-recessed ohmic and schottky contacts through an insulator to an AlGaN layer.
摘要翻译： III族氮化物器件包括用于产生名义上关闭的凹陷电极或增强模式的器件。通过设置凹陷电极，当电极接触不活动以阻止电流在器件中时，形成在两个III族氮化物材料的界面处的导电通道被中断。电极可以是肖特基接触或绝缘金属接触。可以提供两个欧姆接触以形成具有标称关闭特性的整流器件。形成有电极的凹部可以具有倾斜的侧面。电极可以结合设备的载流电极以多种几何形状形成。当电极不凹陷时，形成标称的器件或夹持电阻器。还通过将绝缘体提供非凹入的欧姆和肖特基接触到AlGaN层来形成二极管。

32. 发明申请

US20050189562A1 Integrated III-nitride power devices 有权
标题翻译：集成III族氮化物功率器件
公开(公告)号：US20050189562A1
公开(公告)日：2005-09-01
申请号：US11056794
申请日：2005-02-11
申请人： Daniel Kinzer , Robert Beach
发明人： Daniel Kinzer , Robert Beach
IPC分类号： H01L21/336 , H01L27/06 , H01L29/20 , H01L29/872 , H01L31/072
CPC分类号： H01L29/872 , H01L27/0605 , H01L29/2003 , H01L29/41758 , H01L29/7786
摘要： A III-nitride based integrated semiconductor device which includes at least two III-nitride based semiconductor devices formed in a common die.
摘要翻译：一种III族氮化物基集成半导体器件，其包括形成在共用管芯中的至少两个III族氮化物基半导体器件。

33. 发明申请

US20050121661A1 Field effect transistor with enhanced insulator structure 有权
标题翻译：具有增强的绝缘体结构的场效应晶体管
公开(公告)号：US20050121661A1
公开(公告)日：2005-06-09
申请号：US11004187
申请日：2004-12-03
申请人： Robert Beach
发明人： Robert Beach
IPC分类号： H01L29/20 , H01L29/778 , H01L29/06
CPC分类号： H01L29/7787 , H01L29/2003
摘要： A III-nitride based field effect transistor obtains improved performance characteristics through manipulation of the relationship between the in-plane lattice constant of the interface of material layers. A high mobility two dimensional electron gas generated at the interface of the III-nitride materials permits high current conduction with low ON resistance, and is controllable through the manipulation of spontaneous polarization fields obtained according to the characteristics of the III-nitride material. The field effect transistor produced can be made to be a nominally on device where the in-plane lattice constants of the material forming the interface match. A nominally off device may be produced where one of the material layers has an in-plane lattice constant that is larger than that of the other layer material. The layer materials are preferably InAlGaN/GaN layers that are particularly tailored to the characteristics of the present invention.
摘要翻译：基于III族氮化物的场效应晶体管通过处理材料层的界面的面内晶格常数之间的关系来获得改进的性能特性。在III族氮化物材料的界面处产生的高迁移率二维电子气体允许具有低导通电阻的高电流传导，并且可以通过操纵根据III族氮化物材料的特性获得的自发极化场来控制。所产生的场效应晶体管可以在名义上成为形成界面的材料的面内晶格常数匹配的器件上。可以制造名义上关闭的装置，其中材料层之一的面内晶格常数大于其它层材料的面内晶格常数。层材料优选是特别适合于本发明特征的InAlGaN / GaN层。

34. 发明申请

US20050058087A1 Infrastructure for wireless lans 审中-公开
标题翻译：无线蓝牙的基础设施
公开(公告)号：US20050058087A1
公开(公告)日：2005-03-17
申请号：US10725818
申请日：2003-12-01
申请人： Robert Beach , Heiner Schwede
发明人： Robert Beach , Heiner Schwede
IPC分类号： H04L12/28 , H04W8/26 , H04W52/00 , H04W84/12 , H04W88/08
CPC分类号： H04W8/26 , H04L12/4625 , H04W52/0203 , H04W52/0216 , H04W84/12 , H04W88/08 , Y02D70/142
摘要： A wireless data communications system includes simplified access points which are connected to ports of an intelligent switching hub. The switching hub relays data packets to the access points in accordance with destination address data in the data communications. In a preferred arrangement the access points are provided with power over the data cable from the switching hub location.
摘要翻译：无线数据通信系统包括连接到智能交换集线器端口的简化接入点。交换集线器根据数据通信中的目的地址数据将数据分组中继到接入点。在优选的布置中，接入点通过数据电缆从交换集线器位置提供电力。

35. 发明授权

US06587034B1 Data communication device 有权
标题翻译：数据通信设备
公开(公告)号：US06587034B1
公开(公告)日：2003-07-01
申请号：US09621364
申请日：2000-07-21
申请人： Frederic Heiman , Joseph Katz , Robert Beach , Andrew R. Werback
发明人： Frederic Heiman , Joseph Katz , Robert Beach , Andrew R. Werback
IPC分类号： G08B522
CPC分类号： G06F1/1684 , G06F1/1626 , G06F1/1632 , G06F1/1637 , G06F1/1647 , Y10S370/913
摘要： Simplified data message terminals and data communicating voice terminals are described for providing additional functionality in a facility using a wireless data communication system. The simplified data message terminals provide message and paging communication to employees or customers in a simplified terminal configuration using the existing data communication system. By performing voice to data and data to voice conversions, the same system provides voice communication without interruption of data communication services.
摘要翻译：描述简化的数据消息终端和数据通信语音终端，以便在使用无线数据通信系统的设施中提供额外的功能。简化的数据消息终端使用现有的数据通信系统以简化的终端配置向员工或客户提供消息和寻呼通信。通过对数据和数据进行声音进行语音转换，同一系统提供语音通信而不中断数据通信服务。

36. 发明授权

US08853749B2 Ion implanted and self aligned gate structure for GaN transistors 有权
标题翻译：用于GaN晶体管的离子注入和自对准栅极结构
公开(公告)号：US08853749B2
公开(公告)日：2014-10-07
申请号：US13362669
申请日：2012-01-31
申请人： Alexander Lidow , Jianjun Cao , Robert Beach , Robert Strittmatter , Guang Y. Zhao , Alana Nakata
发明人： Alexander Lidow , Jianjun Cao , Robert Beach , Robert Strittmatter , Guang Y. Zhao , Alana Nakata
IPC分类号： H01L29/76 , H01L21/336 , H01L29/423 , H01L29/778 , H01L29/66 , H01L21/265 , H01L29/20
CPC分类号： H01L21/26586 , H01L21/26546 , H01L29/1066 , H01L29/2003 , H01L29/42316 , H01L29/66462 , H01L29/7787
摘要： A self-aligned transistor gate structure that includes an ion-implanted portion of gate material surrounded by non-implanted gate material on each side. The gate structure may be formed, for example, by applying a layer of GaN material over an AlGaN barrier layer and implanting a portion of the GaN layer to create the gate structure that is laterally surrounded by the GaN layer.
摘要翻译：一种自对准的晶体管栅极结构，其包括在每侧由非植入栅极材料包围的栅极材料的离子注入部分。栅极结构可以例如通过在AlGaN阻挡层上施加GaN材料层并且注入GaN层的一部分以形成由GaN层横向包围的栅极结构来形成。

37. 发明授权

US08699474B2 System with a cell controller adapted to perform a management function 有权
标题翻译：具有适于执行管理功能的单元控制器的系统
公开(公告)号：US08699474B2
公开(公告)日：2014-04-15
申请号：US11622161
申请日：2007-01-11
申请人： Robert Beach
发明人： Robert Beach
IPC分类号： H04W4/00 , H04W84/12
CPC分类号： H04W84/12 , H04L12/4625 , H04L29/04 , H04L69/08 , H04L69/18 , H04W12/02 , H04W16/26 , H04W60/00 , H04W74/00 , H04W88/08 , H04W88/085 , H04W88/12
摘要： A wireless local area network is provided with simplified RF ports which are configured to provide lower level media access control functions. Higher level media access control functions and management functions are provided with a system having a cell controller, which may service one or more RF ports. Mobile units can also be configured with the higher level media access control functions being performed in a host processor.
摘要翻译：无线局域网提供有简化的RF端口，其被配置为提供较低级媒体访问控制功能。具有高级媒体访问控制功能和管理功能的系统具有可以服务于一个或多个RF端口的小区控制器的系统。移动单元还可以配置在主处理器中执行的更高级媒体访问控制功能。

38. 发明授权

US08697581B2 III-nitride semiconductor device with trench structure 有权
标题翻译：具有沟槽结构的III族氮化物半导体器件
公开(公告)号：US08697581B2
公开(公告)日：2014-04-15
申请号：US12217830
申请日：2008-07-09
申请人： Robert Beach , Paul Bridger
发明人： Robert Beach , Paul Bridger
IPC分类号： H01L21/302
CPC分类号： H01L29/7813 , H01L29/0696 , H01L29/0847 , H01L29/2003 , H01L29/4236 , H01L29/51 , H01L29/517 , H01L29/518 , H01L29/66462 , H01L29/66522 , H01L29/66734 , H01L29/7787 , H01L29/7788 , H01L29/7789 , H01L29/7835
摘要： A III-nitride trench device has a vertical conduction region with an interrupted conduction channel when the device is not on, providing an enhancement mode device. The trench structure may be used in a vertical conduction or horizontal conduction device. A gate dielectric provides improved performance for the device by being capable of withstanding higher electric field or manipulating the charge in the conduction channel. A passivation of the III-nitride material decouples the dielectric from the device to permit lower dielectric constant materials to be used in high power applications.
摘要翻译： III型氮化物沟槽器件在器件未导通时具有具有中断的导通通道的垂直导电区域，提供增强型器件。沟槽结构可以用在垂直传导或水平传导装置中。门电介质通过能够承受更高的电场或操纵传导通道中的电荷而为器件提供改进的性能。 III族氮化物材料的钝化将电介质与器件分离，以允许较低的介电常数材料用于高功率应用。

39. 发明申请

US20130240963A1 STT-MRAM Reference Layer Having Substantially Reduced Stray Field and Consisting of a Single Magnetic Domain 有权
标题翻译： STT-MRAM参考层具有基本上减少的杂散场并且由单个磁畴组成
公开(公告)号：US20130240963A1
公开(公告)日：2013-09-19
申请号：US13421963
申请日：2012-03-16
申请人： Robert Beach , Guenole Jan , Yu-Jen Wang , Witold Kula , Po-Kang Wang
发明人： Robert Beach , Guenole Jan , Yu-Jen Wang , Witold Kula , Po-Kang Wang
IPC分类号： H01L29/82 , H01L21/8239
CPC分类号： H01L43/08 , G11C11/161 , H01L27/228 , H01L43/12
摘要： An STT MTJ cell is formed with a magnetic anisotropy of its free and reference layers that is perpendicular to their planes of formation. The reference layer of the cell is an SAF multilayered structure with a single magnetic domain to enhance the bi-stability of the magnetoresistive states of the cell. The free layer of the cell is etched back laterally from the reference layer, so that the fringing stray field of the reference layer is no more than 15% of the coercivity of the free layer and has minimal effect on the free layer.
摘要翻译：形成具有垂直于其形成平面的游离和参考层的磁各向异性的STT MTJ电池。单元的参考层是具有单个磁畴的SAF多层结构，以增强单元的磁阻状态的双稳定性。电池的自由层从参考层横向回蚀刻，使得参考层的边缘杂散场不超过自由层的矫顽力的15％，并且对自由层的影响最小。

40. 发明授权

US08441030B2 III-nitride multi-channel heterojunction interdigitated rectifier 有权
标题翻译： III族氮化物多通道异质结交叉整流器
公开(公告)号：US08441030B2
公开(公告)日：2013-05-14
申请号：US11238206
申请日：2005-09-29
申请人： Robert Beach
发明人： Robert Beach
IPC分类号： H01L29/66 , H01L29/74
CPC分类号： H01L29/7786 , H01L29/1608 , H01L29/2003 , H01L29/205 , H01L29/872
摘要： A III-nitride power semiconductor device that includes a plurality of III-nitride heterojunctions.
摘要翻译：一种III族氮化物功率半导体器件，其包括多个III族氮化物异质结。

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