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    • 34. 发明申请
    • Method of manufacturing vertical light emitting device
    • 制造垂直发光装置的方法
    • US20080113462A1
    • 2008-05-15
    • US11882259
    • 2007-07-31
    • Hyun-soo KimKyoung-kook KimHyung-kun KimKwang-ki ChoiJeong-wook Lee
    • Hyun-soo KimKyoung-kook KimHyung-kun KimKwang-ki ChoiJeong-wook Lee
    • H01L21/02
    • H01L33/0079H01L33/44
    • Provided is a method of manufacturing a vertical light emitting device. The method of manufacturing the vertical light emitting device may include forming an emissive layer including a n-type semiconductor layer, an active layer, and a p-type semiconductor layer on a substrate, forming a first trench dividing the emissive layer into light emitting device units in which the emissive layer remains on the lower part of the first trench to a desired, or alternatively, a predetermined thickness, forming a passivation layer on the emissive layer, forming a p-type electrode on the p-type semiconductor layer of the emissive layer, forming a metal supporting layer on the passivation layer and the p-type electrode, removing the substrate, removing a remaining portion of the emissive layer when the surface of the emissive layer is exposed by removing the substrate, forming a n-type electrode on the n-type semiconductor layer of the emissive layer, and cutting the metal supporting layer to divide the emissive layer into the light emitting device units.
    • 提供一种垂直发光装置的制造方法。 制造垂直发光器件的方法可以包括在衬底上形成包括n型半导体层,有源层和p型半导体层的发射层,形成将发光层划分成发光器件的第一沟槽 其中发射层保留在第一沟槽的下部上的单元到期望的或可选的预定厚度,在发射层上形成钝化层,在p型半导体层上形成p型电极 发射层,在钝化层和p型电极上形成金属支撑层,去除衬底,当发射层的表面通过去除衬底而暴露时去除发射层的剩余部分,形成n型 电极,并且切割金属支撑层以将发光层划分为发光器件单元。