专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

31. 发明授权

US07095591B2 Head slider having microactuator 失效
标题翻译：头滑块具有微致动器
公开(公告)号：US07095591B2
公开(公告)日：2006-08-22
申请号：US10643267
申请日：2003-08-19
申请人： Takahiro Imamura , Yukihiro Uematsu , Hitoshi Kanai , Shinji Koganezawa , Ryosuke Koishi , Takeaki Shimanouchi
发明人： Takahiro Imamura , Yukihiro Uematsu , Hitoshi Kanai , Shinji Koganezawa , Ryosuke Koishi , Takeaki Shimanouchi
IPC分类号： G11B5/60
CPC分类号： G11B5/5552 , G11B5/6082
摘要： A pair of slits are defined in a slider body of a head slider so as to extend from a trailing end surface to the leading end on the slider body. A movable block is established in the slider body between the slits. The slits ensure the extent of movement for the movable block. Elongated plates enable a relative displacement between the movable block and a stationary block. A head element is mounted on a trailing end surface of the movable block. The thickness of a non-magnetic layer corresponds to the gap length of the head element. The gap length of the head element can easily be controlled based on deposition of the non-magnetic layer. The thickness of the non-magnetic layer can be reduced in a relatively facilitated manner, so that the gap length of the head element can easily be minimized.
摘要翻译：一个狭缝被限定在头部滑动件的滑块体中，以便从滑动件主体的后端表面延伸到前端。在滑块体之间在狭缝之间建立可动块。狭缝确保可移动块的移动程度。细长的板使得可移动块和固定块之间的相对位移。头元件安装在可移动块的后端表面上。非磁性层的厚度对应于头元件的间隙长度。基于非磁性层的沉积可以容易地控制头元件的间隙长度。可以以相对便利的方式减小非磁性层的厚度，使得头元件的间隙长度可以容易地最小化。

32. 发明申请

US20060119989A1 SPIN VALVE MAGNETORESISTIVE SENSOR HAVING CPP STRUCTURE 失效
标题翻译：具有CPP结构的旋转阀磁传感器
公开(公告)号：US20060119989A1
公开(公告)日：2006-06-08
申请号：US11327676
申请日：2006-01-06
申请人： Yoshihiko Seyama , Atsushi Tanaka , Keiichi Nagasaka , Yutaka Shimizu , Shin Eguchi , Hitoshi Kanai , Reiko Kondo , Hitoshi Kishi , Junya Ikeda
发明人： Yoshihiko Seyama , Atsushi Tanaka , Keiichi Nagasaka , Yutaka Shimizu , Shin Eguchi , Hitoshi Kanai , Reiko Kondo , Hitoshi Kishi , Junya Ikeda
IPC分类号： G11B5/127 , G11B5/33
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3903 , G11B2005/3996 , H01F10/3259 , H01F10/3268 , H01F10/3295
摘要： Disclosed herein is a spin valve magnetoresistive sensor including a first conductor layer, a free ferromagnetic layer provided on the first conductor layer, a nonmagnetic intermediate layer provided on the free ferromagnetic layer, a pinned ferromagnetic layer provided on the nonmagnetic intermediate layer, an antiferromagnetic layer provided on the pinned ferromagnetic layer, and a second conductor layer provided on the antiferromagnetic layer. At least one of the free ferromagnetic layer and the pinned ferromagnetic layer has a thickness larger than that providing a maximum resistance change rate or resistance change amount in the case of passing a current in an in-plane direction of the at least one layer. That is, the thickness of at least one of the free ferromagnetic layer and the pinned ferromagnetic layer falls in the range of 3 nm to 12 nm.
摘要翻译：本文公开了一种自旋阀磁阻传感器，其包括第一导体层，设置在第一导体层上的自由铁磁层，设置在自由铁磁层上的非磁性中间层，设置在非磁性中间层上的钉扎铁磁层，反铁磁层设置在被钉扎的铁磁层上，以及设置在反铁磁层上的第二导体层。自由铁磁层和被钉扎的铁磁层中的至少一个具有大于在通过至少一个层的面内方向的电流的情况下提供最大电阻变化率或电阻变化量的厚度的厚度。也就是说，自由铁磁层和被钉扎铁磁层中的至少一个的厚度落在3nm至12nm的范围内。

33. 发明授权

US06851179B2 Magnetic head producing method 失效
标题翻译：磁头制作方法
公开(公告)号：US06851179B2
公开(公告)日：2005-02-08
申请号：US09740602
申请日：2000-12-19
申请人： Junichi Kane , Hitoshi Kanai , Kenji Noma , Naoki Mukoyama
发明人： Junichi Kane , Hitoshi Kanai , Kenji Noma , Naoki Mukoyama
IPC分类号： G11B5/31 , G11B5/39 , G11B5/127
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3163 , G11B5/3903 , G11B5/3967 , G11B2005/3996 , Y10T29/49032 , Y10T29/49043 , Y10T29/4906
摘要： The present invention provides a method for producing a magnetic head whose reproduction waveform has small distortions, and forming a hard magnetism layer for applying a bias magnetic field to a magnetoresistive element, which is a multilayer film including a fixed magnetic layer having magnetization fixed to a first direction and a free magnetic layer having an easy axis of magnetization that is directed to a second direction, is formed in an area including at least one of a front area in the first direction and a rear area in the first direction.
摘要翻译：本发明提供了一种用于制造再现波形具有小失真的磁头的方法，并且形成用于向磁阻元件施加偏置磁场的硬磁层，该磁阻元件是包括具有固定到第一方向和具有朝向第二方向的易磁化轴的自由磁性层形成在包括第一方向上的前区域和第一方向上的后区域中的至少一个的区域中。

34. 发明授权

US06819533B2 Magnetoresistive head in which an interlayer coupling field applied to a free magnetic layer is reduced 失效
标题翻译：其中施加到自由磁性层的层间耦合场减小的磁阻头
公开(公告)号：US06819533B2
公开(公告)日：2004-11-16
申请号：US09729391
申请日：2000-12-04
申请人： Kenji Noma , Hitoshi Kanai
发明人： Kenji Noma , Hitoshi Kanai
IPC分类号： G11B539
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B5/3967 , G11B2005/3996
摘要： 5 There is disclosed a magnetoresistive head in which an interlayer coupling field Hin applied to a free magnetic layer is minimized. The magnetoresistive head is provided with a magnetoresistive film including: a first antiferromagnetic layer 2; a pinned magnetic layer 3 formed on the first antiferromagnetic layer 2 and provided with magnetization whose direction is fixed; a first nonmagnetic layer 4 formed on the pinned magnetic layer 3; a free magnetic layer 5 formed on the first nonmagnetic layer 4 and provided with magnetization whose direction changes in accordance with an external magnetic field; a second nonmagnetic layer 6 formed on the free magnetic layer 5; and a second antiferromagnetic layer 7, formed on the second nonmagnetic layer 6, for applying a bias magnetic field generated by static interlayer coupling and directed in a direction opposite to magnetization direction of the pinned magnetic layer 3 to the free magnetic layer 5.
摘要翻译：公开了一种磁阻头，其中施加到自由磁性层的层间耦合场Hin最小化。磁阻磁头设置有磁阻膜，包括：第一反铁磁层2; 形成在第一反铁磁层2上并具有方向固定的磁化的钉扎磁性层3; 形成在钉扎磁性层3上的第一非磁性层4; 形成在第一非磁性层4上并具有根据外部磁场的方向变化的磁化的自由磁性层5; 形成在自由磁性层5上的第二非磁性层6; 以及形成在第二非磁性层6上的第二反铁磁性层7，用于施加由静态层间耦合产生的偏磁场，并且沿着与被钉扎的磁性层3的磁化方向相反的方向指向自由磁性层5。

35. 发明授权

US06759120B2 Magnetoresistive film, magnetoresistive head, information regeneration apparatus and magnetoresistive film manufacture method 失效
标题翻译：磁阻膜，磁阻头，信息再生装置和磁阻膜制造方法
公开(公告)号：US06759120B2
公开(公告)日：2004-07-06
申请号：US09726752
申请日：2000-11-30
申请人： Hong Jongill , Kenichi Aoshima , Kenji Noma , Junichi Kane , Hitoshi Kanai
发明人： Hong Jongill , Kenichi Aoshima , Kenji Noma , Junichi Kane , Hitoshi Kanai
IPC分类号： G11B531
CPC分类号： B82Y25/00 , B82Y10/00 , B82Y40/00 , G11B5/3903 , G11B2005/3996 , H01F10/3268 , H01F41/302 , H01F41/325 , H01L43/08 , H01L43/12 , Y10S428/911 , Y10T428/1114 , Y10T428/1121
摘要： There is disclosed a magnetoresistive film in which increase of a coupling field accompanying thickness reduction of a middle layer is inhibited. The magnetoresistive film is a multilayered film including a pinned layer 3 having magnetization whose direction is fixed, a nonmagnetic middle layer 4 formed on the pinned layer, and a free layer 5 formed on the middle layer and provided with magnetization whose direction changes in accordance with an external magnetic field, the magnetoresistive film indicates a magnitude of resistance in accordance with an angle formed by the magnetization direction of the pinned layer and the magnetization direction of the free layer, and a copper oxide layer 7 of an oxide including a copper element is formed directly on the free layer, or on the free layer via an oxide layer 6 of a material fabricated by oxidizing a material constituting the free layer.
摘要翻译：公开了一种磁阻膜，其中伴随着中间层的厚度减小的耦合场的增加被抑制。磁阻膜是一种多层膜，其包括具有固定方向的磁化的被钉扎层3，形成在钉扎层上的非磁性中间层4和形成在中间层上的自由层5，该自由层5的方向根据外部磁场，磁阻膜表示根据被钉扎层的磁化方向和自由层的磁化方向形成的角度的电阻大小，包含铜元素的氧化物的氧化铜层7为通过氧化构成自由层的材料制成的材料的氧化物层6直接形成在自由层上或自由层上。

36. 发明授权

US06243241B1 Spin valve magneto-resistance effect head and a magnetic storage apparatus using the same 失效
标题翻译：旋转阀磁阻效应头和使用其的磁存储装置
公开(公告)号：US06243241B1
公开(公告)日：2001-06-05
申请号：US09095414
申请日：1998-06-10
申请人： Hitoshi Kanai
发明人： Hitoshi Kanai
IPC分类号： G11B539
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/00 , G11B5/3903 , G11B5/59683 , G11B2005/0016 , G11B2005/3996
摘要： A spin valve magneto-resistance effect head includes a spin valve film, a pair of magnetic shield members, and a support member. Each of the pair of magnetic shield members is arranged opposite to each surface of the spin valve film. The support member is arranged between the spin valve film and the pair of magnetic shield members for setting the relative position therebetween (D1>D2) in order to form a predetermined gap having non-conductivity therebetween. The change of resistivity based on giant magneto-resistance effect for signal magnetic field applied from a storage medium is output from the spin valve film as voltage drop in response to sense current applied from an outside. The antiferromagnetic layer is provided in order to magnetize the pinned layer to a direction orthogonal to the direction of the sense current by forming magnetic field by an exchange coupling to the pinned layer.
摘要翻译：自旋阀磁阻效应头包括自旋阀膜，一对磁屏蔽构件和支撑构件。所述一对磁屏蔽构件中的每一个与所述自旋阀膜的每个表面相对布置。支撑构件布置在自旋阀膜和一对磁屏蔽构件之间，用于设定它们之间的相对位置（D1> D2），以形成其间具有不导电性的预定间隙。基于从存储介质施加的信号磁场的巨磁阻效应的电阻率的变化从自旋阀膜输出，作为响应于从外部施加的感测电流的电压降。提供反铁磁层，以通过通过与被钉扎层的交换耦合而形成磁场来将钉扎层磁化到与感测电流方向正交的方向。

37. 发明授权

US6123780A Spin valve magnetoresistive head and manufacturing method therefor 失效
标题翻译：自旋阀磁阻头及其制造方法
公开(公告)号：US6123780A
公开(公告)日：2000-09-26
申请号：US6977
申请日：1998-01-14
申请人： Hitoshi Kanai , Kenichi Aoshima , Kenichiro Yamada , Mitsumasa Okada , Eiji Shimizu , Junichi Kane
发明人： Hitoshi Kanai , Kenichi Aoshima , Kenichiro Yamada , Mitsumasa Okada , Eiji Shimizu , Junichi Kane
IPC分类号： G11B5/31 , G11B5/39 , C21D1/04
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B5/3967 , G11B2005/3996 , G11B5/3163
摘要： A method for manufacturing a spin valve GMR head is describe in which a fixed magnetic layer of the head may maintain magnetization in a desired orientation. In one aspect of the invention, the method comprises steps of: forming a magnetic film including at least a free magnetic layer, a non-magnetic metallic layer, a fixed magnetic layer, and a magnetic domain control layer; subjecting the magnetic film to a first heat treatment under a magnetic field to enhance magnetic anisotropy of the free magnetic layer; and subjecting the magnetic film to a second heat treatment under a magnetic field and at a higher temperature than the maximum temperature applied in the processes that precede the second heat treatment, to fix the magnetization in the fixed magnetic layer. In anther aspect of the invention, the method comprises steps of: forming a magnetic film including a free magnetic layer, a non-magnetic metallic layer, a fixed magnetic layer, and a magnetic domain control layer; subjecting the magnetic film to a first heat treatment under a magnetic field to fix the magnetization in the fixed magnetic layer; subjecting the magnetic film to a second heat treatment under a magnetic field to enhance magnetic anisotropy of the free magnetic layer; and subjecting the magnetic film to a third heat treatment in the absence of an externally applied magnetic field.
摘要翻译：描述了用于制造自旋阀GMR头的方法，其中磁头的固定磁性层可以将磁化保持在期望的取向。在本发明的一个方面，所述方法包括以下步骤：形成至少包括自由磁性层，非磁性金属层，固定磁性层和磁畴控制层的磁性膜; 在磁场下对磁性膜进行第一次热处理以提高自由磁性层的磁各向异性; 并且在磁场和比在第二热处理之前的工序中施加的最高温度更高的温度下对磁性膜进行第二次热处理，以将磁化固定在固定磁性层中。在本发明的另一方面，该方法包括以下步骤：形成包括自由磁性层，非磁性金属层，固定磁性层和磁畴控制层的磁性膜; 对磁性膜进行磁场的第一次热处理，以固定在固定磁性层中的磁化强度; 在磁场下对磁性膜进行第二次热处理，以提高自由磁性层的磁各向异性; 并且在没有外部施加的磁场的情况下对磁性膜进行第三次热处理。

38. 发明授权

US6046892A Magnetoresistive head with improved underlayer 失效
标题翻译：具有改进底层的磁阻头
公开(公告)号：US6046892A
公开(公告)日：2000-04-04
申请号：US40048
申请日：1998-03-17
申请人： Kenichi Aoshima , Hitoshi Kanai
发明人： Kenichi Aoshima , Hitoshi Kanai
IPC分类号： G11B5/39 , H01F10/08 , H01F10/30 , H01F10/32
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B5/3906 , H01F10/3268 , G11B2005/3996 , G11B5/399 , H01F10/3295
摘要： A magnetoresistive head includes an underlayer composed of one of Ni and NiFe alloy and at least one additive selected from the group consisting of Cr, Nb, Rh, and Pd. An anti-ferromagnetic layer is formed on the underlayer, and a first ferromagnetic layer is formed on the anti-ferromagnetic layer. The magnetic head also includes a nonmagnetic layer formed on the first ferromagnetic layer, and a second ferromagnetic layer formed on the nonmagnetic layer.
摘要翻译：磁阻头包括由Ni和NiFe合金中的一种构成的底层和选自Cr，Nb，Rh和Pd的至少一种添加剂。在底层上形成反铁磁层，在反铁磁层上形成第一铁磁层。磁头还包括形成在第一铁磁层上的非磁性层和形成在非磁性层上的第二铁磁层。

39. 发明授权

US5978182A Magnetoresistive head with spin valve configuration 失效
标题翻译：具有自旋阀配置的磁阻头
公开(公告)号：US5978182A
公开(公告)日：1999-11-02
申请号：US971102
申请日：1997-11-14
申请人： Hitoshi Kanai , Yoshifumi Mizoshita , Junichi Kane , Kenichi Aoshima
发明人： Hitoshi Kanai , Yoshifumi Mizoshita , Junichi Kane , Kenichi Aoshima
IPC分类号： G11B5/00 , G11B5/39
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/00 , G11B5/3903 , G11B2005/3996 , G11B5/3925 , G11B5/3967
摘要： The present invention relates to a magnetoresistive head capable of converting a change in a magnetic field generated by a magnetic recording medium into a change in electric resistivity by utilizing spin valve magnetoresistance effect to read signal information. The magnetoresistive head comprises a first magnetic layer, a second magnetic layer formed on the first magnetic layer through a first nonmagnetic metal layer and magnetized in one direction, a third magnetic layer formed on the second magnetic layer through a second nonmagnetic metal layer, and an electric current supplying layer for applying a constant current to at least the third magnetic layer, the second nonmagnetic metal layer and the second magnetic layer in one of the same direction as and the opposite direction to the direction of magnetization of the second magnetic layer.
摘要翻译：本发明涉及一种能够通过利用自旋阀磁电阻效应将磁记录介质产生的磁场变化转换为电阻率变化的磁阻头。磁阻头包括第一磁性层，通过第一非磁性金属层形成在第一磁性层上并在一个方向上被磁化的第二磁性层，通过第二非磁性金属层形成在第二磁性层上的第三磁性层，以及电流供给层，用于向与第二磁性层的磁化方向相同的方向和与第二磁性层的磁化方向相反的方向中的至少第三磁性层，第二非磁性金属层和第二磁性层施加恒定电流。

40. 发明授权

US5792546A Magneto-resistive head and method of producing the same 失效
标题翻译：磁阻头及其制造方法
公开(公告)号：US5792546A
公开(公告)日：1998-08-11
申请号：US289204
申请日：1994-08-12
申请人： Michiaki Kanamine , Hitoshi Kanai , Junichi Kane , Junzo Toda , Yuji Uehara
发明人： Michiaki Kanamine , Hitoshi Kanai , Junichi Kane , Junzo Toda , Yuji Uehara
IPC分类号： G11B5/31 , G11B5/39 , G11B5/66
CPC分类号： G11B5/3932 , G11B5/3903 , G11B5/3912 , G11B5/3967 , G11B5/3163 , Y10S428/90 , Y10T428/1171 , Y10T428/24942 , Y10T428/2495
摘要： A magneto-resistive head is provided with a substrate, a lower shield layer made of a Fe-system magnetic material and provided above the substrate, and a non-magnetic insulator layer provided above the lower shield layer. The non-magnetic insulator layer has a function of suppressing deterioration of surface roughness of the lower shield layer when subjected to an annealing process under a magnetic field in order to improve magnetic characteristics of the lower shield layer to desired magnetic characteristics.
摘要翻译：磁阻头设置有基板，由Fe系磁性材料制成并设置在基板上方的下屏蔽层，以及设置在下屏蔽层上方的非磁性绝缘体层。非磁性绝缘体层具有在磁场下进行退火处理时抑制下屏蔽层的表面粗糙度劣化的功能，以便将下屏蔽层的磁特性改善为期望的磁特性。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式