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31. 发明申请

US20060246666A1 Method of fabricating flash memory with u-shape floating gate 审中-公开
标题翻译：用u形浮栅制造闪速存储器的方法
公开(公告)号：US20060246666A1
公开(公告)日：2006-11-02
申请号：US11410837
申请日：2006-04-26
申请人： Jeong-nam Han , Dong-chan Kim , Chang-jin Kang , Kyeong-koo Chi , Woo-gwan Shim , Hyo-san Lee , Chang-ki Hong , Sang-jun Choi
发明人： Jeong-nam Han , Dong-chan Kim , Chang-jin Kang , Kyeong-koo Chi , Woo-gwan Shim , Hyo-san Lee , Chang-ki Hong , Sang-jun Choi
IPC分类号： H01L21/336
CPC分类号： H01L27/11526 , H01L27/105 , H01L27/11543
摘要： A method of fabricating a flash memory having a U-shape floating gate is provided. The method includes forming adjacent isolation layers separated by a gap and forming a tunnel oxide layer in the gap. After a conductive layer is formed on the tunnel oxide layer to a thickness not to fill the gap, a polishing sacrificial layer is formed on the conductive layer. The sacrificial layer and the conductive layer on the isolation layers are removed, thereby forming a U-shape floating gate self-aligned in the gap, and concurrently forming a sacrificial layer pattern within an inner portion of the floating gate. Selected isolation layers are then recessed to expose sidewalls of the floating gate. The sacrificial layer pattern is then removed from the floating gate to expose an upper surface of the floating gate.
摘要翻译：提供一种制造具有U形浮动栅极的闪速存储器的方法。该方法包括形成由间隙隔开并在间隙中形成隧道氧化物层的相邻隔离层。在隧道氧化物层上形成导电层至不填充间隙的厚度之后，在导电层上形成抛光牺牲层。除去隔离层上的牺牲层和导电层，从而在间隙中形成自对准的U形浮动栅极，同时在浮栅的内部部分内形成牺牲层图案。然后将选定的隔离层凹入以露出浮动栅极的侧壁。然后从浮动栅极去除牺牲层图案以暴露浮动栅极的上表面。

32. 发明授权

US06966952B2 Apparatus of depositing thin film with high uniformity 失效
公开(公告)号：US06966952B2
公开(公告)日：2005-11-22
申请号：US10910417
申请日：2004-08-04
申请人： Young-eal Kim , Sang-jun Choi , Dong-joon Ma
发明人： Young-eal Kim , Sang-jun Choi , Dong-joon Ma
IPC分类号： C23C14/24 , C23C14/00 , C23C14/50 , C23C16/00 , H01L21/68 , H01L21/687
CPC分类号： C23C14/505 , C23C14/243 , H01L21/68707
摘要： A deposition apparatus of depositing deposition material on a wafer in a vacuum chamber includes a deposition boat installed in the vacuum chamber to vaporize the deposition material, a wafer guide on which the wafer is loaded, the wafer guide having a rotational member rotating together with the wafer, a wafer-rotation device rotating the rotational member when the wafer guide approaches, and a wafer-transfer device reciprocating the wafer guide between an inlet of the vacuum chamber, the deposition boat and the wafer-rotation device.

33. 发明授权

US06416927B1 Chemically amplified resist compositions 有权
标题翻译：化学扩增抗蚀剂组合物
公开(公告)号：US06416927B1
公开(公告)日：2002-07-09
申请号：US09675500
申请日：2000-09-29
申请人： Sang-jun Choi , Chun-geun Park , Young-bum Koh
发明人： Sang-jun Choi , Chun-geun Park , Young-bum Koh
IPC分类号： G03F7004
CPC分类号： C08F220/18 , C08F222/06 , G03F7/0045 , G03F7/039 , Y10S430/111 , Y10S430/115
摘要： Copolymers and terpolyers are used in chemically amplified resists. The terpolymers are of the formula: wherein R3 is selected from the group consisting of hydrogen and a C1 to C10 aliphatic hydrocarbon, wherein the aliphatic hydrocarbon contains substituents selected from the group consisting of hydrogen, hydroxy, carboxylic acid, carboxylic anhydride, and combinations thereof; R4 is selected from the group consisting of hydrogen and a C1 to C10 aliphatic hydrocarbon, wherein the aliphatic hydrocarbon contains substituents selected from the group consisting of hydrogen, hydroxy, carboxylic acid, carboxylic anhydride, and combinations thereof; R5 is selected from the group consisting of hydrogen and methyl; R6 is selected from the group consisting of t-butyl and tetrahydropyranyl; m and n are each integers; and wherein n/(m+n) ranges from about 0.1 to about 0.5.
摘要翻译：共聚物和三聚体用于化学增强抗蚀剂。三元共聚物具有下式：其中R 3选自氢和C 1至C 10脂族烃，其中脂族烃包含选自氢，羟基，羧酸，羧酸酐及其组合的取代基 ; R4选自氢和C1至C10脂族烃，其中脂族烃包含选自氢，羟基，羧酸，羧酸酐及其组合的取代基; R5选自氢和甲基; R6选自叔丁基和四氢吡喃基; m和n分别为整数; 并且其中n /（m + n）为约0.1至约0.5。

34. 发明授权

US06284438B1 Method for manufacturing a photoresist pattern defining a small opening and method for manufacturing semiconductor device using the same 失效
标题翻译：用于制造限定小开口的光致抗蚀剂图案的方法和使用其制造半导体器件的方法
公开(公告)号：US06284438B1
公开(公告)日：2001-09-04
申请号：US09420555
申请日：1999-10-19
申请人： Sang-jun Choi , Yool Kang , Si-hyeung Lee , Joo-tae Moon
发明人： Sang-jun Choi , Yool Kang , Si-hyeung Lee , Joo-tae Moon
IPC分类号： G03F726
CPC分类号： G03F7/40 , G03F7/0045 , G03F7/039
摘要： A method for manufacturing a photoresist pattern that defines an opening having a small size, and a method for manufacturing a semiconductor device using the same are provided. A photoresist pattern defining the opening can be formed using a photoresist composition that includes either polymer mixture I containing a polymer A in which an acid-labile di-alkyl malonate group is pendant to the polymer backbone, and a polymer B in which a group that thermally decomposes at a temperature lower than the glass transition temperature of the polymer B itself is pendant to the polymer backbone, or polymer mixture II containing the polymer B and a polymer C including a (meth)acrylate as a monomer, as a main component. The size of the opening then can be reduced by thermal flowing the photoresist pattern. It is possible to form the photoresist pattern defining an opening having a small size since the photoresist composition comprises the polymer mixture which has advantageous characteristics, such as high contrast, and in which the flow rate of the composition upon thermal flowing can easily be controlled.
摘要翻译：提供了限定具有小尺寸的开口的光致抗蚀剂图案的制造方法以及使用其的半导体装置的制造方法。可以使用光致抗蚀剂组合物形成限定开口的光致抗蚀剂图案，该光致抗蚀剂组合物包括含有聚合物A的聚合物混合物I，其中酸不稳定的二烷基丙二酸酯基团悬挂于聚合物主链，聚合物B，在低于聚合物B本身的玻璃化转变温度的温度下热分解为聚合物主链，或含有聚合物B的聚合物混合物II和包含（甲基）丙烯酸酯作为单体的聚合物C作为主要成分。然后可以通过光致抗蚀剂图案的热流动来减小开口的尺寸。可以形成限定具有小尺寸的开口的光致抗蚀剂图案，因为光致抗蚀剂组合物包含聚合物混合物，其具有诸如高对比度的有利特征，并且其中组合物在热流动时的流速可以容易地被控制。

35. 发明授权

US06171754B2 Chemically amplified resist compositions 失效
标题翻译：化学扩增抗蚀剂组合物
公开(公告)号：US06171754B2
公开(公告)日：2001-01-09
申请号：US09124597
申请日：1998-07-29
申请人： Sang-jun Choi , Chun-geun Park , Young-bum Koh
发明人： Sang-jun Choi , Chun-geun Park , Young-bum Koh
IPC分类号： B03F7004
CPC分类号： C08F220/18 , C08F222/06 , G03F7/0045 , G03F7/039 , Y10S430/111 , Y10S430/115
摘要： Copolymers and terpolyers are used in chemically amplified resists. The terpolymers are of the formula: wherein R3 is selected from the group consisting of hydrogen and a C1 to C10 aliphatic hydrocarbon, wherein the aliphatic hydrocarbon contains substituents selected from the group consisting of hydrogen, hydroxy, carboxylic acid, carboxylic anhydride, and combinations thereof; R4 is selected from the group consisting of hydrogen and a C1 to C10 aliphatic hydrocarbon, wherein the aliphatic hydrocarbon contains substituents selected from the group consisting of hydrogen, hydroxy, carboxylic acid, carboxylic anhydride, and combinations thereof; R5 is selected from the group consisting of hydrogen and methyl; R6 is selected from the group consisting of t-butyl and tetrahydropyranyl; m and n are each integers; and wherein n/(m+n) ranges from about 0.1 to about 0.5.
摘要翻译：共聚物和三聚体用于化学增强抗蚀剂。三元共聚物具有下式：其中R 3选自氢和C 1至C 10脂族烃，其中脂族烃包含选自氢，羟基，羧酸，羧酸酐及其组合的取代基 ; R4选自氢和C1至C10脂族烃，其中脂族烃包含选自氢，羟基，羧酸，羧酸酐及其组合的取代基; R5选自氢和甲基; R6选自叔丁基和四氢吡喃基; m和n分别为整数; 并且其中n /（m + n）为约0.1至约0.5。

36. 发明授权

US6080524A Photosensitive polymer having cyclic backbone and resist composition comprising the same 失效
标题翻译：具有环状骨架的光敏聚合物和包含其的抗蚀剂组合物
公开(公告)号：US6080524A
公开(公告)日：2000-06-27
申请号：US251158
申请日：1999-02-17
申请人： Sang-jun Choi
发明人： Sang-jun Choi
IPC分类号： H01L21/027 , C08F120/30 , C08F220/30 , C08F236/20 , G03F7/004 , G03F7/039
CPC分类号： G03F7/039 , G03F7/0045 , Y10S430/106 , Y10S430/111
摘要： A photoresist composition including a photoacid generator and a photosensitive polymer for use in a chemically amplified photoresist that is represented by the following chemical formula (CF1): ##STR1## wherein R.sub.1 is a C.sub.1 to C.sub.20 aliphatic hydrocarbon; R.sub.2 is selected from the group including t-butyl, tetrahydropyranyl and 1-alkoxyethyl groups; l, m, and n are integers, and wherein l/(l+m+n)=0.1-0.5, m/(l+m+n)=0.1-0.7, and n/(l+m+n)=0.0-0.4. The photosensitive polymer has a cyclic backbone containing an alicyclic compound, which has high resistance to dry etching, and is used with excimer lasers to create a fine pattern line.
摘要翻译：一种光致抗蚀剂组合物，其包含用于由以下化学式（CF1）表示的化学放大光致抗蚀剂中的光致酸产生剂和感光性聚合物：其中R1为C1〜C20脂肪族烃; R2选自叔丁基，四氢吡喃基和1-烷氧基乙基; l，m和n是整数，其中l /（1 + m + n）= 0.1-0.5，m /（1 + m + n）= 0.1-0.7，n /（1 + m + n）= 0.0-0.4。感光性聚合物具有含有脂环族化合物的环状主链，其具有高耐干蚀刻性，并且与准分子激光器一起使用以形成精细图案线。

37. 发明授权

US5998557A Chemically amplified resists 有权
标题翻译：化学扩增抗蚀剂
公开(公告)号：US5998557A
公开(公告)日：1999-12-07
申请号：US265150
申请日：1999-03-09
申请人： Sang-jun Choi
发明人： Sang-jun Choi
IPC分类号： G03F7/004 , C08F30/08 , C08L43/04 , G03F7/039 , G03F7/075 , G03C1/72
CPC分类号： G03F7/0758 , G03F7/0045 , Y10S430/106 , Y10S430/111
摘要： In general, the invention provides polymers which may be used in chemically amplified resists. More particularly, the invention relates to esterified polymers containing the group: ##STR1## Resist compositions comprise the esterified polymers and photoacid generators.
摘要翻译：通常，本发明提供了可用于化学增强抗蚀剂中的聚合物。更具体地说，本发明涉及含有该基团的酯化聚合物：抗蚀剂组合物包含酯化聚合物和光酸产生剂。

38. 发明授权

US08362455B2 Storage node of a resistive random access memory device with a resistance change layer and method of manufacturing the same 有权
标题翻译：具有电阻变化层的电阻随机存取存储器件的存储节点及其制造方法
公开(公告)号：US08362455B2
公开(公告)日：2013-01-29
申请号：US12003136
申请日：2007-12-20
申请人： Sang-jun Choi , Jung-hyun Lee , Hyung-jin Bae , Chang-soo Lee
发明人： Sang-jun Choi , Jung-hyun Lee , Hyung-jin Bae , Chang-soo Lee
IPC分类号： H01L45/00
CPC分类号： H01L45/04 , H01L27/2436 , H01L45/1233 , H01L45/146 , H01L45/1625
摘要： Provided are a resistive random access memory device and a method of manufacturing the same. The resistive random access memory device includes a switching device and a storage node connected to the switching device, and the storage node includes a first electrode and a second electrode and a resistance change layer formed of Cu2-XO between the first electrode and the second electrode.
摘要翻译：提供一种电阻随机存取存储器件及其制造方法。电阻式随机存取存储器件包括开关器件和连接到开关器件的存储节点，并且存储节点包括第一电极和第二电极以及在第一电极和第二电极之间由Cu2-XO形成的电阻变化层。

39. 发明授权

US08247788B2 Nonvolatile memory device 有权
标题翻译：非易失性存储器件
公开(公告)号：US08247788B2
公开(公告)日：2012-08-21
申请号：US12659175
申请日：2010-02-26
申请人： Kwang-soo Seol , Yoon-dong Park , Deok-kee Kim , Sang-jun Choi
发明人： Kwang-soo Seol , Yoon-dong Park , Deok-kee Kim , Sang-jun Choi
IPC分类号： H01L45/00
CPC分类号： H01L27/2445 , H01L27/2436 , H01L27/249 , H01L45/04 , H01L45/06 , H01L45/1226 , H01L45/144 , H01L45/146 , H01L45/147
摘要： The nonvolatile memory device includes at least one pair of first electrode lines, at least one device structure disposed between the at least one pair of first electrode lines and a dielectric layer disposed between the at least one device structure and the at least one pair of first electrode lines. The at least one device structure includes a second electrode line including a first conductive type semiconductor, a resistance changing material layer adjacent to the second electrode line, a channel adjacent to the resistance changing material layer and including a second conductive type semiconductor different from the first conductive type semiconductor and a third electrode line adjacent to the channel and including the first conductive type semiconductor.
摘要翻译：非易失性存储器件包括至少一对第一电极线，设置在至少一对第一电极线之间的至少一个器件结构和设置在该至少一个器件结构与至少一对第一电极线之间的电介质层电极线。所述至少一个器件结构包括第二电极线，所述第二电极线包括第一导电类型半导体，与所述第二电极线相邻的电阻改变材料层，与所述电阻变化材料层相邻的通道，并且包括不同于所述第一导电类型的第一导电型半导体导电型半导体和与沟道相邻的第三电极线，并且包括第一导电型半导体。

40. 发明授权

US07932543B2 Wire structure and semiconductor device comprising the wire structure 有权
标题翻译：线结构和包括线结构的半导体器件
公开(公告)号：US07932543B2
公开(公告)日：2011-04-26
申请号：US12005364
申请日：2007-12-27
申请人： Sang-jun Choi , Jung-hyun Lee , Hyung-jin Bae , Chang-soo Lee
发明人： Sang-jun Choi , Jung-hyun Lee , Hyung-jin Bae , Chang-soo Lee
IPC分类号： H01L27/10
CPC分类号： H01L27/101 , Y10S977/732 , Y10S977/762 , Y10S977/765 , Y10S977/94
摘要： Provided are a wire structure and a semiconductor device having the wire structure. The wire structure includes a first wire that has a first region having a width of several to tens of nanometers and a second region having a width wider than that of the first region.
摘要翻译：提供一种线结构和具有线结构的半导体器件。导线结构包括具有宽度为几至几十纳米的第一区域和宽度大于第一区域宽度的第二区域的第一布线。

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