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31. 发明授权

US07428130B2 Magnetoresistive element, magnetic head, magnetic storage unit, and magnetic memory unit 失效
标题翻译：磁阻元件，磁头，磁存储单元和磁存储单元
公开(公告)号：US07428130B2
公开(公告)日：2008-09-23
申请号：US11410315
申请日：2006-04-25
申请人： Arata Jogo , Hirotaka Oshima , Takahiro Ibusuki , Yutaka Shimizu , Takuya Uzumaki
发明人： Arata Jogo , Hirotaka Oshima , Takahiro Ibusuki , Yutaka Shimizu , Takuya Uzumaki
IPC分类号： G11B5/39
CPC分类号： H01F10/3254 , B82Y25/00 , G01R33/093 , G11B5/3906 , G11C11/16 , H01F10/3263 , H01F10/3272 , H01F10/3281 , H01L43/08
摘要： A CPP-type magnetoresistive element including a fixed magnetization layer, a non-magnetic metal layer, and a free magnetization layer that are stacked, and a diffusion prevention layer is disclosed. The free magnetization layer includes CoMnAl. The diffusion prevention layer is provided between the non-magnetic metal layer and the free magnetization layer so as to prevent Mn included in the free magnetization layer from diffusing into the non-magnetic metal layer. CoMnAl has a composition within the area formed by connecting Point A (44, 23, 33), Point B (48, 25, 27), Point C (60, 20, 20), Point D (65, 15, 20), Point E (65, 10, 25), Point F (60, 10, 30), and Point A with straight lines in this order in a ternary composition diagram where coordinates of the composition are expressed as (Co content, Mn content, Al content) with each of the Co, Mn, and Al contents being expressed in atomic percentage.
摘要翻译：包括堆叠的固定磁化层，非磁性金属层和自由磁化层的CPP型磁阻元件，以及扩散防止层。自由磁化层包括CoMnAl。在非磁性金属层和自由磁化层之间设置扩散防止层，以防止包含在自由磁化层中的Mn扩散到非磁性金属层。 CoMnAl具有通过连接点A（44,23,33），点B（48,25,27），点C（60,20,20），点D（65,15,20），点E（65,10,25），点F（60,10,30），点A以直线表示，其组成的坐标表示为（Co含量，Mn含量，Al 含量），其中Co，Mn和Al中的每一种以原子百分比表示。

32. 发明授权

US07428127B2 CPP magnetoresistive effect element and magnetic storage device having a CPP magnetoresistive effect element 失效
标题翻译： CPP磁阻效应元件和具有CPP磁阻效应元件的磁存储器件
公开(公告)号：US07428127B2
公开(公告)日：2008-09-23
申请号：US11042962
申请日：2005-01-25
申请人： Keiichi Nagasaka , Yoshihiko Seyama , Hirotaka Oshima , Yutaka Shimizu , Atsushi Tanaka
发明人： Keiichi Nagasaka , Yoshihiko Seyama , Hirotaka Oshima , Yutaka Shimizu , Atsushi Tanaka
IPC分类号： G11B5/33 , G11B5/127
CPC分类号： G11B5/3903 , H01L43/08 , H01L43/12
摘要： A CPP magnetoresistive effect element includes a free magnetization layer, a fixed magnetization layer, and a plurality of conductive non-magnetic intermediate layers formed between the free magnetization layer and the fixed magnetization layer. An insulating layer and a magnetic layer including magnetic atoms are provided between any two of the non-magnetic intermediate layers.
摘要翻译： CPP磁阻效应元件包括自由磁化层，固定磁化层和形成在自由磁化层和固定磁化层之间的多个导电非磁性中间层。在任意两个非磁性中间层之间设置绝缘层和包含磁性原子的磁性层。

33. 发明授权

US07116533B2 Magnetoresistive sensor 失效
标题翻译：磁阻传感器
公开(公告)号：US07116533B2
公开(公告)日：2006-10-03
申请号：US11327676
申请日：2006-01-06
申请人： Yoshihiko Seyama , Atsushi Tanaka , Keiichi Nagasaka , Yutaka Shimizu , Shin Eguchi , Hitoshi Kanai , Reiko Kondo , Hitoshi Kishi , Junya Ikeda
发明人： Yoshihiko Seyama , Atsushi Tanaka , Keiichi Nagasaka , Yutaka Shimizu , Shin Eguchi , Hitoshi Kanai , Reiko Kondo , Hitoshi Kishi , Junya Ikeda
IPC分类号： G11B5/127
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3903 , G11B2005/3996 , H01F10/3259 , H01F10/3268 , H01F10/3295
摘要： A magnetoresistive sensor including the following layers, in order: a first conductor layer; a first antiferromagnetic layer; a first pinned ferromagnetic layer; a first nonmagnetic intermediate layer; a free ferromagnetic layer; a second nonmagnetic intermediate layer; a second pinned ferromagnetic layer; a second antiferromagnetic layer; and a second conductor layer. Alternatively, the magnetoresistive sensor may include the following layers, in order: a first conductor layer; a first free ferromagnetic layer; a first nonmagnetic intermediate layer; a first pinned ferromagnetic layer; an antiferromagnetic layer; a second pinned ferromagnetic layer; a second nonmagnetic intermediate layer; a second free ferromagnetic layer; and a second conductor layer.
摘要翻译：一种磁阻传感器，包括以下层：第一导体层; 第一反铁磁层; 第一固定铁磁层; 第一非磁性中间层; 自由铁磁层; 第二非磁性中间层; 第二钉扎铁磁层; 第二反铁磁层; 和第二导体层。或者，磁阻传感器可以依次包括以下层：第一导体层; 第一自由铁磁层; 第一非磁性中间层; 第一固定铁磁层; 反铁磁层; 第二钉扎铁磁层; 第二非磁性中间层; 第二自由铁磁层; 和第二导体层。

34. 发明授权

US06970764B2 Machining program producing apparatus 失效
标题翻译：加工程序制作装置
公开(公告)号：US06970764B2
公开(公告)日：2005-11-29
申请号：US10507777
申请日：2002-12-26
申请人： Toshio Harada , Yutaka Shimizu , Kouzou Shima
发明人： Toshio Harada , Yutaka Shimizu , Kouzou Shima
IPC分类号： G05B19/406 , G05B19/4093 , G06F19/00
CPC分类号： G05B19/4093 , G05B2219/35305 , Y02P90/265
摘要： An input data check control portion, which compares input data with a decimal point check target word (step 64, 65) and, issues a warning when the input data is the decimal point check target word and the numerical value data of the input data is not given a decimal point (step 66), is provided. This structure enables the prevention of input mistakes of coordinate data and the like, which are easily made at the time of manual programming of a machining program for an NC machine tool, and also enables said input mistakes to be easily found.
摘要翻译：一种输入数据检查控制部分，其将输入数据与小数点检查对象字进行比较（步骤64,65），并且当输入数据是小数点检查对象字并且输入数据的数值数据为未提供小数点（步骤66）。该结构能够防止在NC机床的加工程序的手动编程时容易进行的坐标数据等的输入错误，并且还能够容易地找到所述输入错误。

35. 发明授权

US06927952B2 CPP GMR free layer having ferromagnetic layers with parallel magnetization separated by non-magnetic layer 失效
标题翻译：具有由非磁性层分离的具有平行磁化的铁磁层的CPP GMR自由层
公开(公告)号：US06927952B2
公开(公告)日：2005-08-09
申请号：US10114767
申请日：2002-04-03
申请人： Yutaka Shimizu , Hirotaka Oshima , Keiichi Nagasaka , Yoshihiko Seyama , Atsushi Tanaka
发明人： Yutaka Shimizu , Hirotaka Oshima , Keiichi Nagasaka , Yoshihiko Seyama , Atsushi Tanaka
IPC分类号： G11B5/00 , G11B5/012 , G11B5/39 , H01L43/08
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/00 , G11B5/012 , G11B5/3903 , G11B2005/3996 , H01L43/08
摘要： A magnetoresistive device includes a laminated film, and a mechanism for applying sense current in a direction of lamination in the laminated film, wherein the laminated film includes a first ferromagnetic layer having a substantially fixed direction of magnetization, a second ferromagnetic layer having a freely variable direction of magnetization according to an external magnetic field, the second ferromagnetic layer including a non-magnetic metal layer, and two or more ferromagnetic metal layers separated from each other by the non-magnetic metal layer in the direction of lamination, and a non-magnetic intermediate layer that separates the first and second ferromagnetic layer from each other.
摘要翻译：磁阻装置包括层叠膜，以及用于在叠层膜中层叠方向施加感应电流的机构，其中层压膜包括具有大体上固定的磁化方向的第一铁磁层，具有可自由变化的第二铁磁层根据外部磁场的磁化方向，所述第二铁磁层包括非磁性金属层，以及两个或多个非磁性金属层在层叠方向上彼此分离的强磁性金属层，磁性中间层，其将第一和第二铁磁层彼此分离。

36. 发明申请

US20050168877A1 Magnetoresistive head 审中-公开
标题翻译：磁阻头
公开(公告)号：US20050168877A1
公开(公告)日：2005-08-04
申请号：US11093514
申请日：2005-03-30
申请人： Reiko Kondo , Yutaka Shimizu , Atsushi Tanaka
发明人： Reiko Kondo , Yutaka Shimizu , Atsushi Tanaka
IPC分类号： G11B5/127 , G11B5/33 , G11B5/39
CPC分类号： G11B5/39 , G11B5/127
摘要： A magnetoresistive head for detecting a magnetic signal on a recording medium as a reproduction signal includes a first magnetic shield, a first electrode terminal disposed on the first magnetic shield, a magnetoresistive film disposed on the first electrode terminal, magnetic domain control films disposed on both sides of the magnetoresistive film for controlling magnetic domains in the magnetoresistive film by applying a bias magnetic field in a first direction to the magnetoresistive film. The magnetoresistive head further includes a second electrode terminal disposed on the magnetoresistive film, and a second magnetic shield disposed on the second electrode terminal. At the time of reproduction of the magnetic signal, a sense current is passed across the first and second electrode terminals in the direction perpendicular to the film plane of the magnetoresistive film so that the direction of a current magnetic field in a medium-opposed end portion of the magnetoresistive film is in the first direction.
摘要翻译：用于检测作为再现信号的记录介质上的磁信号的磁阻头包括第一磁屏蔽，设置在第一磁屏蔽上的第一电极端子，设置在第一电极端子上的磁阻膜，设置在两者上的磁畴控制膜用于通过向磁阻膜施加第一方向的偏置磁场来控制磁阻膜中的磁畴的磁阻膜的侧面。磁阻头还包括设置在磁阻膜上的第二电极端子和设置在第二电极端子上的第二磁屏蔽。在再现磁信号时，感测电流在与磁阻膜的膜平面垂直的方向上穿过第一和第二电极端子，使得中间相对端部中的电流磁场的方向磁阻膜位于第一方向。

37. 发明申请

US20050030673A1 Current-perpendicular-to-the-plane structure magnetoresistive element having sufficient sensitivity 失效
标题翻译：电流垂直于平面结构的磁阻元件具有足够的灵敏度
公开(公告)号：US20050030673A1
公开(公告)日：2005-02-10
申请号：US10940941
申请日：2004-09-14
申请人： Hirotaka Oshima , Yutaka Shimizu , Atsushi Tanaka
发明人： Hirotaka Oshima , Yutaka Shimizu , Atsushi Tanaka
IPC分类号： G01R33/09 , G11B5/31 , G11B5/39 , G11B5/33 , G11B5/127
CPC分类号： G01R33/093 , B82Y10/00 , B82Y25/00 , G11B5/313 , G11B5/3903 , G11B2005/3996
摘要： A current-perpendicular-to-the-plane (CPP) structure magnetoresistive element includes an electrode layer contacting a magnetoresistive film. A low resistance region is defined to extend rearward along the boundary of the magnetoresistive film from the front end exposed at the medium-opposed surface of the head slider. A high resistance region is defined to extend rearward along the boundary from the rear end of the low resistance region. The high resistance region has a resistivity higher than that of the low resistance region. The high resistance region serves to restrict the path of a sensing current nearest to the medium-opposed surface. The sensing current is allowed to concentrate at a position closest to the medium-opposed surface in the magnetoresistive film. Magnetization sufficiently rotates in the magnetoresistive film near the medium-opposed surface. The CPP structure magnetoresistive element maintains a sufficient variation in the resistance. A sufficient sensitivity can be maintained.
摘要翻译：电流垂直于平面（CPP）结构的磁阻元件包括接触磁阻膜的电极层。限定低电阻区域沿着从磁头滑块的介质相对表面暴露的前端沿着磁阻膜的边界向后延伸。高电阻区域被限定为从低电阻区域的后端沿着边界向后延伸。高电阻区域的电阻率高于低电阻区域的电阻率。高电阻区域用于限制最接近介质相对表面的感测电流的路径。允许感测电流集中在最接近磁阻膜中的介质相对表面的位置。磁化膜在介质相对表面附近的磁阻膜中充分旋转。 CPP结构磁阻元件保持电阻的充分变化。可以保持足够的灵敏度。

38. 发明授权

US06781799B2 Current perpendicular-to-the-plane structure spin valve magnetoresistive head 失效
标题翻译：当前垂直于平面结构的自旋阀磁阻头
公开(公告)号：US06781799B2
公开(公告)日：2004-08-24
申请号：US09821185
申请日：2001-03-29
申请人： Yoshihiko Seyama , Atsushi Tanaka , Keiichi Nagasaka , Yutaka Shimizu
发明人： Yoshihiko Seyama , Atsushi Tanaka , Keiichi Nagasaka , Yutaka Shimizu
IPC分类号： G11B5127
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/00 , G11B5/012 , G11B5/3903 , G11B5/3967 , H01F10/3254
摘要： A current perpendicular-to-the-plane (CPP) structure spin valve magnetoresistive (MR) transducer includes an insulating layer. A pinned or free ferromagnetic layer serves to space or isolate the insulating layer from a non-magnetic spacer layer interposed between the pinned and free ferromagnetic layers. The sensing current is allowed to penetrate through the insulating layer. Fine pin-holes generally formed in the insulating layer are supposed to enable migration of electrons through the insulating layer. Similar to the situation in which the sensing current is allowed to flow through a reduced sectional area, a larger variation can be obtained in response to the inversion of the magnetization in the free ferromagnetic layer. The spin valve MR transducer is expected to greatly contribute to realization of a still higher recording density. Moreover, the spin valve MR transducer is also expected to exhibit an electric resistance approximately equal to a tenth part of that of a well-known tunnel junction magnetoresistive (TMR) element. Accordingly, a thermal noise can significantly be suppressed in the spin valve MR transducer as compared with the TMR element.
摘要翻译：电流垂直于平面（CPP）结构的自旋阀磁阻（MR）传感器包括绝缘层。被钉扎或自由的铁磁层用于将绝缘层与置于固定和自由铁磁层之间的非磁性间隔层隔离或隔离。允许感测电流穿过绝缘层。通常在绝缘层中形成的细针孔假设能使电子迁移通过绝缘层。类似于允许感测电流流过减小的截面面积的情况，响应于自由铁磁层中的磁化的反转，可以获得更大的变化。自旋阀MR换能器有望大大有助于实现更高的记录密度。此外，自旋阀MR换能器也预期会呈现大约等于公知的隧道结磁阻（TMR）元件的电阻的十分之一的电阻。因此，与TMR元件相比，自旋阀MR换能器可以显着地抑制热噪声。

39. 发明授权

US06436465B1 Extrusion coating method 失效
标题翻译：挤出涂布法
公开(公告)号：US06436465B1
公开(公告)日：2002-08-20
申请号：US08738469
申请日：1996-10-30
申请人： Eizo Tsunoda , Yutaka Shimizu , Masujiro Seki , Naomi Yoshiike , Kazuo Katai , Katsumi Onozawa
发明人： Eizo Tsunoda , Yutaka Shimizu , Masujiro Seki , Naomi Yoshiike , Kazuo Katai , Katsumi Onozawa
IPC分类号： B05D512
CPC分类号： G11B5/848
摘要： A magnetic paint is extrusion coated to a length of splice jointed webs through a coating head by continuously feeding the length of webs across the head. When a splice joint passes across the head, the head is moved apart from the web before passage and contacted with the web after passage. Objectionable coating portions which are formed as a result of moving the head out of and into contact with the web are scraped off by a scraping roll downstream of the head.
摘要翻译：通过连续地将长度的纤维网连续地供给到头部上，通过涂覆头将磁性涂料挤出涂覆到一段接头连接的腹板上。当接头接头穿过头部时，头部在通过之前从腹板移开并且在通过后与腹板接触。由于将头部移动并与纸幅接触而形成的不良涂层部分被头部下游的刮刀刮掉。

40. 发明授权

US06327121B1 GMR head, method for its manufacture, and magnetic disc drive utilizing the head 失效
标题翻译： GMR头，其制造方法和利用磁头的磁盘驱动器
公开(公告)号：US06327121B1
公开(公告)日：2001-12-04
申请号：US09191940
申请日：1998-11-13
申请人： Keiichi Nagasawa , Yutaka Shimizu , Hitoshi Kishi , Atsushi Tanaka , Reiko Kondoh
发明人： Keiichi Nagasawa , Yutaka Shimizu , Hitoshi Kishi , Atsushi Tanaka , Reiko Kondoh
IPC分类号： G11B539
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/012 , G11B5/3903 , G11B5/3929 , G11B5/3945 , G11B2005/3996 , Y10S977/934
摘要： The invention provides a GMR head in which an adequate bias point may be set for the free magnetic layer 12 of the GMR head by suppressing the static magnetic field in the free magnetic layer which arises from a pinned magnetic layer 14 of the GMR head. The GMR head comprises a sensor section 10, a magnetic field correction section 20 disposed laterally adjacent to the sensor section 10. The sensor section 10 includes, in addition to the free magnetic layer 12 and the pinned magnetic layer 14, an intermediate layer 13 and an anti-ferromagnetic layer 15 in a specific arrangement. The magnetic field correction section 20 may have the same structure as the sensor section 10. Because the sensor section 10 and the magnetic field correction section 20 are provided independently and disposed laterally adjacent to each other in the direction of height of the GMR head, the magnetic field emerging from the pinned magnetic layer 14 into the free magnetic layer 12 is suppressed by the magnetic field correction section 20. The magnetic field correction section 20 may be easily formed together and simultaneously with the sensor section 10.
摘要翻译：本发明提供一种GMR头，其中可以通过抑制由GMR头的钉扎磁性层14产生的自由磁性层中的静态磁场，为GMR头的自由磁性层12设置适当的偏置点。 GMR头包括传感器部分10，与传感器部分10相邻设置的磁场校正部分20.传感器部分10除了自由磁性层12和固定磁性层14之外还包括中间层13和具有特定布置的反铁磁层15。磁场校正部20可以具有与传感器部10相同的结构。由于传感器部10和磁场校正部20独立地设置并且在GMR头的高度方向上彼此横向相邻设置，通过磁场校正部20抑制从被钉扎磁性层14向自由磁性层12出射的磁场。磁场校正部20可以容易地与传感器部10一起形成。

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