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31. 发明申请

US20110171770A1 MANUFACTURING METHOD OF A PHOTOELECTRIC CONVERSION DEVICE 有权
标题翻译：光电转换装置的制造方法
公开(公告)号：US20110171770A1
公开(公告)日：2011-07-14
申请号：US13073321
申请日：2011-03-28
申请人： Ryuichi Mishima , Mineo Shimotsusa , Hiroaki Naruse
发明人： Ryuichi Mishima , Mineo Shimotsusa , Hiroaki Naruse
IPC分类号： H01L31/18
CPC分类号： H01L27/307 , H01L27/14603 , H01L27/14625 , H01L27/14643 , H01L27/14689
摘要： A manufacturing method of a photoelectric conversion device included a first step of forming a gate electrode, a second step of forming a semiconductor region of a first conductivity type, a third step of forming an insulation film, and a fourth step of forming a protection region of a second conductivity type, which is the opposite conductivity type to the first conductivity type, by implanting ions in the semiconductor region using the gate electrode of the transfer transistor and a portion covering a side face of the gate electrode of the transfer transistor of the insulation film as a mask in a state in which the semiconductor substrate and the gate electrode of the transfer transistor are covered by the insulation film, and causing a portion of the semiconductor region of the first conductivity type from which the protection region is removed to be the charge accumulation region.
摘要翻译：光电转换装置的制造方法包括形成栅电极的第一工序，形成第一导电型半导体区域的第二工序，形成绝缘膜的第三工序，形成保护区域的第四工序第二导电类型与第一导电类型相反的导电类型，通过使用转移晶体管的栅电极在半导体区域中注入离子，以及覆盖转移晶体管的转移晶体管的栅电极的侧面的部分在半导体基板和转移晶体管的栅电极被绝缘膜覆盖的状态下作为掩模的绝缘膜，并且使保护区域被去除的第一导电类型的半导体区域的一部分为电荷累积区域。

32. 发明授权

US07935557B2 Manufacturing method of a photoelectric conversion device 有权
标题翻译：光电转换装置的制造方法
公开(公告)号：US07935557B2
公开(公告)日：2011-05-03
申请号：US12622747
申请日：2009-11-20
申请人： Ryuichi Mishima , Mineo Shimotsusa , Hiroaki Naruse
发明人： Ryuichi Mishima , Mineo Shimotsusa , Hiroaki Naruse
IPC分类号： H01L21/266 , H01L21/339
CPC分类号： H01L27/307 , H01L27/14603 , H01L27/14625 , H01L27/14643 , H01L27/14689
摘要： A manufacturing method of a photoelectric conversion device included a first step of forming a gate electrode, a second step of forming a semiconductor region of a first conductivity type, a third step of forming an insulation film, and a fourth step of forming a protection region of a second conductivity type, which is the opposite conductivity type to the first conductivity type, by implanting ions in the semiconductor region using the gate electrode of the transfer transistor and a portion covering a side face of the gate electrode of the transfer transistor of the insulation film as a mask in a state in which the semiconductor substrate and the gate electrode of the transfer transistor are covered by the insulation film, and causing a portion of the semiconductor region of the first conductivity type from which the protection region is removed to be the charge accumulation region.
摘要翻译：光电转换装置的制造方法包括形成栅电极的第一工序，形成第一导电型半导体区域的第二工序，形成绝缘膜的第三工序，形成保护区域的第四工序第二导电类型与第一导电类型相反的导电类型，通过使用转移晶体管的栅电极在半导体区域中注入离子，以及覆盖转移晶体管的转移晶体管的栅电极的侧面的部分在半导体基板和转移晶体管的栅电极被绝缘膜覆盖的状态下作为掩模的绝缘膜，并且使保护区域被去除的第一导电类型的半导体区域的一部分为电荷累积区域。

33. 发明申请

US20070205439A1 IMAGE PICKUP APPARATUS AND IMAGE PICKUP SYSTEM 审中-公开
标题翻译：图像拾取装置和图像拾取系统
公开(公告)号：US20070205439A1
公开(公告)日：2007-09-06
申请号：US11680742
申请日：2007-03-01
申请人： Akira Okita , Hiroki Hiyama , Ryuichi Mishima , Asako Ura
发明人： Akira Okita , Hiroki Hiyama , Ryuichi Mishima , Asako Ura
IPC分类号： H01L27/148
CPC分类号： H01L27/14632 , H01L27/14609 , H01L27/14621 , H01L27/14623 , H01L27/14625 , H01L27/14627 , H01L27/14645
摘要： An image pickup apparatus of the present invention includes a plurality of photoelectric conversion elements disposed on a semiconductor substrate, a multi-layer wiring structure including a plurality of interlayer insulation films disposed above the semiconductor substrate, and a passiation layer disposed above the multi-layer wiring structure. A first insulation layer is disposed below the under surface of the passiation layer; a second insulation layer is disposed above the top surface of the passiation layer; and the refractive indices of the passiation layer and the first insulation layer differ from each other, and the refractive indices of the passiation layer and the second insulation layer differ from each other. Moreover, planarization processing is performed to at least one layer of the interlayer insulation films and the first insulation layer. Furthermore, a first anti-reflection film is disposed between the passiation layer and the first insulation layer, and a second anti-reflection film is disposed between the passiation layer and the second insulation layer.
摘要翻译：本发明的图像拾取装置包括设置在半导体衬底上的多个光电转换元件，包括设置在半导体衬底之上的多个层间绝缘膜的多层布线结构，以及设置在多层上方的钝化层接线结构。第一绝缘层设置在被钝化层的下表面下方; 第二绝缘层设置在被钝化层的顶表面之上; 并且被照射层和第一绝缘层的折射率彼此不同，并且被照射层和第二绝缘层的折射率彼此不同。此外，对层间绝缘膜和第一绝缘层的至少一层进行平坦化处理。此外，第一防反射膜设置在被照射层和第一绝缘层之间，第二防反射膜设置在被照射层和第二绝缘层之间。

34. 发明申请

US20120288979A1 SOLID-STATE IMAGE SENSOR AND IMAGING SYSTEM 审中-公开
标题翻译：固态图像传感器和成像系统
公开(公告)号：US20120288979A1
公开(公告)日：2012-11-15
申请号：US13555355
申请日：2012-07-23
申请人： Toru Koizumi , Akira Okita , Tetsuya Itano , Sakae Hashimoto , Ryuichi Mishima
发明人： Toru Koizumi , Akira Okita , Tetsuya Itano , Sakae Hashimoto , Ryuichi Mishima
IPC分类号： H01L31/18
CPC分类号： H01L27/14636 , H01L27/14609 , H01L27/14612 , H01L27/1462 , H01L27/14621 , H01L27/14625 , H01L27/14627 , H01L27/14643
摘要： At least one exemplary embodiment is directed to a solid state image sensor including at least one antireflective layer and/or non rectangular shaped wiring layer cross section to reduce dark currents and 1/f noise.
摘要翻译：至少一个示例性实施例涉及包括至少一个抗反射层和/或非矩形形状的布线层横截面的固态图像传感器，以减少暗电流和1 / f噪声。

35. 发明申请

US20120181582A1 MANUFACTURING METHOD OF A PHOTOELECTRIC CONVERSION DEVICE 有权
标题翻译：光电转换装置的制造方法
公开(公告)号：US20120181582A1
公开(公告)日：2012-07-19
申请号：US13431113
申请日：2012-03-27
申请人： Ryuichi Mishima , Mineo Shimotsusa , Hiroaki Naruse
发明人： Ryuichi Mishima , Mineo Shimotsusa , Hiroaki Naruse
IPC分类号： H01L27/148
CPC分类号： H01L27/307 , H01L27/14603 , H01L27/14625 , H01L27/14643 , H01L27/14689
摘要： A manufacturing method of a photoelectric conversion device comprises a first step of forming a gate electrode, a second step of forming a semiconductor region of a first conductivity type, a third step of forming an insulation film, and a fourth step of forming a protection region of a second conductivity type, which is the opposite conductivity type to the first conductivity type, by implanting ions in the semiconductor region using the gate electrode of the transfer transistor and a portion covering a side face of the gate electrode of the transfer transistor of the insulation film as a mask in a state in which the semiconductor substrate and the gate electrode of the transfer transistor are covered by the insulation film, and causing a portion of the semiconductor region of the first conductivity type from which the protection region is removed to be the charge accumulation region.
摘要翻译：光电转换装置的制造方法包括形成栅电极的第一工序，形成第一导电型的半导体区域的第二工序，形成绝缘膜的第三工序，形成保护区域的第四工序第二导电类型与第一导电类型相反的导电类型，通过使用转移晶体管的栅电极在半导体区域中注入离子，以及覆盖转移晶体管的转移晶体管的栅电极的侧面的部分在半导体基板和转移晶体管的栅电极被绝缘膜覆盖的状态下作为掩模的绝缘膜，并且使保护区域被去除的第一导电类型的半导体区域的一部分为电荷累积区域。

36. 发明授权

US08163588B2 Manufacturing method of a photoelectric conversion device 有权
标题翻译：光电转换装置的制造方法
公开(公告)号：US08163588B2
公开(公告)日：2012-04-24
申请号：US13073321
申请日：2011-03-28
申请人： Ryuichi Mishima , Mineo Shimotsusa , Hiroaki Naruse
发明人： Ryuichi Mishima , Mineo Shimotsusa , Hiroaki Naruse
IPC分类号： H01L21/00
CPC分类号： H01L27/307 , H01L27/14603 , H01L27/14625 , H01L27/14643 , H01L27/14689
摘要： A manufacturing method of a photoelectric conversion device included a first step of forming a gate electrode, a second step of forming a semiconductor region of a first conductivity type, a third step of forming an insulation film, and a fourth step of forming a protection region of a second conductivity type, which is the opposite conductivity type to the first conductivity type, by implanting ions in the semiconductor region using the gate electrode of the transfer transistor and a portion covering a side face of the gate electrode of the transfer transistor of the insulation film as a mask in a state in which the semiconductor substrate and the gate electrode of the transfer transistor are covered by the insulation film, and causing a portion of the semiconductor region of the first conductivity type from which the protection region is removed to be the charge accumulation region.
摘要翻译：光电转换装置的制造方法包括形成栅电极的第一工序，形成第一导电型半导体区域的第二工序，形成绝缘膜的第三工序，形成保护区域的第四工序第二导电类型与第一导电类型相反的导电类型，通过使用转移晶体管的栅电极在半导体区域中注入离子，以及覆盖转移晶体管的转移晶体管的栅电极的侧面的部分在半导体基板和转移晶体管的栅电极被绝缘膜覆盖的状态下作为掩模的绝缘膜，并且使保护区域被去除的第一导电类型的半导体区域的一部分为电荷累积区域。

37. 发明申请

US20110049332A1 PHOTOELECTRIC CONVERSION DEVICE, IMAGE SENSING SYSTEM, AND METHOD OF MANUFACTURING PHOTOELECTRIC CONVERSION DEVICE 有权
标题翻译：光电转换装置，图像感测系统及制造光电转换装置的方法
公开(公告)号：US20110049332A1
公开(公告)日：2011-03-03
申请号：US12853547
申请日：2010-08-10
申请人： Hiroaki Naruse , Ryuichi Mishima
发明人： Hiroaki Naruse , Ryuichi Mishima
IPC分类号： H01L27/146 , H01L31/0232 , H01L31/18
CPC分类号： H01L27/14625 , H01L27/14609 , H01L27/14632
摘要： A photoelectric conversion device having a pixel array region in which a plurality of pixels each including a photoelectric converter are arrayed, and a peripheral region arranged around the pixel array region, the device comprising a multilayer wiring structure which is arranged on a semiconductor substrate, and includes wiring layers in the peripheral region more than wiring layers in the pixel array region, and a plurality of interlayer lenses which is arranged on the multilayer wiring structure in the pixel array region, wherein the plurality of interlayer lenses each includes a first insulator, and a second insulator arranged to cover the first insulator, and having a refractive index higher than the first insulator, and wherein the first insulator in each of the plurality of interlayer lenses, and an uppermost interlayer insulating film in the peripheral region in the multilayer wiring structure are made of an identical material.
摘要翻译：具有像素阵列区域的光电转换装置，其中排列有包括光电转换器的多个像素，以及围绕像素阵列区域布置的周边区域，该装置包括布置在半导体衬底上的多层布线结构，以及包括比像素阵列区域中的布线层更多的边缘区域中的布线层，以及布置在像素阵列区域中的多层布线结构上的多个层间透镜，其中多个层间透镜各自包括第一绝缘体，以及布置成覆盖第一绝缘体并且具有比第一绝缘体高的折射率的第二绝缘体，并且其中多个层间透镜中的每一个中的第一绝缘体和多层布线结构中的周边区域中的最上层的层间绝缘膜由相同的材料制成。

38. 发明申请

US20100173444A1 MANUFACTURING METHOD OF A PHOTOELECTRIC CONVERSION DEVICE 有权
标题翻译：光电转换装置的制造方法
公开(公告)号：US20100173444A1
公开(公告)日：2010-07-08
申请号：US12622747
申请日：2009-11-20
申请人： Ryuichi Mishima , Mineo Shimotsusa , Hiroaki Naruse
发明人： Ryuichi Mishima , Mineo Shimotsusa , Hiroaki Naruse
IPC分类号： H01L31/113
CPC分类号： H01L27/307 , H01L27/14603 , H01L27/14625 , H01L27/14643 , H01L27/14689
摘要： A manufacturing method of a photoelectric conversion device comprises a first step of forming a gate electrode, a second step of forming a semiconductor region of a first conductivity type, a third step of forming an insulation film, and a fourth step of forming a protection region of a second conductivity type, which is the opposite conductivity type to the first conductivity type, by implanting ions in the semiconductor region using the gate electrode of the transfer transistor and a portion covering a side face of the gate electrode of the transfer transistor of the insulation film as a mask in a state in which the semiconductor substrate and the gate electrode of the transfer transistor are covered by the insulation film, and causing a portion of the semiconductor region of the first conductivity type from which the protection region is removed to be the charge accumulation region.
摘要翻译：光电转换装置的制造方法包括形成栅电极的第一工序，形成第一导电型的半导体区域的第二工序，形成绝缘膜的第三工序，形成保护区域的第四工序第二导电类型与第一导电类型相反的导电类型，通过使用转移晶体管的栅电极在半导体区域中注入离子，以及覆盖转移晶体管的转移晶体管的栅电极的侧面的部分在半导体基板和转移晶体管的栅电极被绝缘膜覆盖的状态下作为掩模的绝缘膜，并且使保护区域被去除的第一导电类型的半导体区域的一部分为电荷累积区域。

39. 发明申请

US20080203509A1 PHOTOELECTRIC CONVERSION DEVISE AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：光电转换装置及其制造方法
公开(公告)号：US20080203509A1
公开(公告)日：2008-08-28
申请号：US12026627
申请日：2008-02-06
申请人： Ryuichi Mishima , Hiroaki Naruse
发明人： Ryuichi Mishima , Hiroaki Naruse
IPC分类号： H01L31/0232 , H01L31/18
CPC分类号： H01L31/18 , H01L27/14625 , H01L31/02327
摘要： A photoelectric conversion device comprises a photoelectric conversion element disposed at a semiconductor substrate, and a multilayered wiring structure including a plurality of wiring layers disposed over the semiconductor substrate in such a manner to sandwich an interlayer insulation film therebetween. A diffusion suppressing film is disposed at least on the uppermost one of the wiring layers, the diffusion suppressing film serving to suppress diffusion of material forming the uppermost wiring layer; the diffusion suppressing film covers regions of the uppermost wiring layer and the interlayer insulation film corresponding to the photoelectric conversion element; and a lens is disposed with respect to a region of the diffusion suppressing film corresponding to the photoelectric conversion element.
摘要翻译：光电转换装置包括设置在半导体衬底上的光电转换元件和包括设置在半导体衬底之上的多个布线层的多层布线结构，以夹在其间的层间绝缘膜。扩散抑制膜至少设置在布线层的最上面，扩散抑制膜用于抑制形成最上层布线层的材料的扩散; 扩散抑制膜覆盖与光电转换元件相对应的最上层布线层和层间绝缘膜的区域; 并且相对于与光电转换元件对应的扩散抑制膜的区域设置透镜。

40. 发明申请

US20060049476A1 Solid-state image sensor and imaging system 有权
标题翻译：固态图像传感器和成像系统
公开(公告)号：US20060049476A1
公开(公告)日：2006-03-09
申请号：US11219007
申请日：2005-09-01
申请人： Toru Koizumi , Akira Okita , Tetsuya Itano , Sakae Hashimoto , Ryuichi Mishima
发明人： Toru Koizumi , Akira Okita , Tetsuya Itano , Sakae Hashimoto , Ryuichi Mishima
IPC分类号： H01L31/0232 , H01L31/00
CPC分类号： H01L27/14636 , H01L27/14609 , H01L27/14612 , H01L27/1462 , H01L27/14621 , H01L27/14625 , H01L27/14627 , H01L27/14643
摘要： At least one exemplary embodiment is directed to a solid state image sensor including at least one antireflective layer and/or non rectangular shaped wiring layer cross section to reduce dark currents and 1/f noise.
摘要翻译：至少一个示例性实施例涉及包括至少一个抗反射层和/或非矩形形状的布线层横截面的固态图像传感器，以减少暗电流和1 / f噪声。

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