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1. 发明申请

US20120181582A1 MANUFACTURING METHOD OF A PHOTOELECTRIC CONVERSION DEVICE 有权
标题翻译：光电转换装置的制造方法
公开(公告)号：US20120181582A1
公开(公告)日：2012-07-19
申请号：US13431113
申请日：2012-03-27
申请人： Ryuichi Mishima , Mineo Shimotsusa , Hiroaki Naruse
发明人： Ryuichi Mishima , Mineo Shimotsusa , Hiroaki Naruse
IPC分类号： H01L27/148
CPC分类号： H01L27/307 , H01L27/14603 , H01L27/14625 , H01L27/14643 , H01L27/14689
摘要： A manufacturing method of a photoelectric conversion device comprises a first step of forming a gate electrode, a second step of forming a semiconductor region of a first conductivity type, a third step of forming an insulation film, and a fourth step of forming a protection region of a second conductivity type, which is the opposite conductivity type to the first conductivity type, by implanting ions in the semiconductor region using the gate electrode of the transfer transistor and a portion covering a side face of the gate electrode of the transfer transistor of the insulation film as a mask in a state in which the semiconductor substrate and the gate electrode of the transfer transistor are covered by the insulation film, and causing a portion of the semiconductor region of the first conductivity type from which the protection region is removed to be the charge accumulation region.
摘要翻译：光电转换装置的制造方法包括形成栅电极的第一工序，形成第一导电型的半导体区域的第二工序，形成绝缘膜的第三工序，形成保护区域的第四工序第二导电类型与第一导电类型相反的导电类型，通过使用转移晶体管的栅电极在半导体区域中注入离子，以及覆盖转移晶体管的转移晶体管的栅电极的侧面的部分在半导体基板和转移晶体管的栅电极被绝缘膜覆盖的状态下作为掩模的绝缘膜，并且使保护区域被去除的第一导电类型的半导体区域的一部分为电荷累积区域。

2. 发明授权

US08163588B2 Manufacturing method of a photoelectric conversion device 有权
标题翻译：光电转换装置的制造方法
公开(公告)号：US08163588B2
公开(公告)日：2012-04-24
申请号：US13073321
申请日：2011-03-28
申请人： Ryuichi Mishima , Mineo Shimotsusa , Hiroaki Naruse
发明人： Ryuichi Mishima , Mineo Shimotsusa , Hiroaki Naruse
IPC分类号： H01L21/00
CPC分类号： H01L27/307 , H01L27/14603 , H01L27/14625 , H01L27/14643 , H01L27/14689
摘要： A manufacturing method of a photoelectric conversion device included a first step of forming a gate electrode, a second step of forming a semiconductor region of a first conductivity type, a third step of forming an insulation film, and a fourth step of forming a protection region of a second conductivity type, which is the opposite conductivity type to the first conductivity type, by implanting ions in the semiconductor region using the gate electrode of the transfer transistor and a portion covering a side face of the gate electrode of the transfer transistor of the insulation film as a mask in a state in which the semiconductor substrate and the gate electrode of the transfer transistor are covered by the insulation film, and causing a portion of the semiconductor region of the first conductivity type from which the protection region is removed to be the charge accumulation region.
摘要翻译：光电转换装置的制造方法包括形成栅电极的第一工序，形成第一导电型半导体区域的第二工序，形成绝缘膜的第三工序，形成保护区域的第四工序第二导电类型与第一导电类型相反的导电类型，通过使用转移晶体管的栅电极在半导体区域中注入离子，以及覆盖转移晶体管的转移晶体管的栅电极的侧面的部分在半导体基板和转移晶体管的栅电极被绝缘膜覆盖的状态下作为掩模的绝缘膜，并且使保护区域被去除的第一导电类型的半导体区域的一部分为电荷累积区域。

3. 发明申请

US20100173444A1 MANUFACTURING METHOD OF A PHOTOELECTRIC CONVERSION DEVICE 有权
标题翻译：光电转换装置的制造方法
公开(公告)号：US20100173444A1
公开(公告)日：2010-07-08
申请号：US12622747
申请日：2009-11-20
申请人： Ryuichi Mishima , Mineo Shimotsusa , Hiroaki Naruse
发明人： Ryuichi Mishima , Mineo Shimotsusa , Hiroaki Naruse
IPC分类号： H01L31/113
CPC分类号： H01L27/307 , H01L27/14603 , H01L27/14625 , H01L27/14643 , H01L27/14689
摘要： A manufacturing method of a photoelectric conversion device comprises a first step of forming a gate electrode, a second step of forming a semiconductor region of a first conductivity type, a third step of forming an insulation film, and a fourth step of forming a protection region of a second conductivity type, which is the opposite conductivity type to the first conductivity type, by implanting ions in the semiconductor region using the gate electrode of the transfer transistor and a portion covering a side face of the gate electrode of the transfer transistor of the insulation film as a mask in a state in which the semiconductor substrate and the gate electrode of the transfer transistor are covered by the insulation film, and causing a portion of the semiconductor region of the first conductivity type from which the protection region is removed to be the charge accumulation region.
摘要翻译：光电转换装置的制造方法包括形成栅电极的第一工序，形成第一导电型的半导体区域的第二工序，形成绝缘膜的第三工序，形成保护区域的第四工序第二导电类型与第一导电类型相反的导电类型，通过使用转移晶体管的栅电极在半导体区域中注入离子，以及覆盖转移晶体管的转移晶体管的栅电极的侧面的部分在半导体基板和转移晶体管的栅电极被绝缘膜覆盖的状态下作为掩模的绝缘膜，并且使保护区域被去除的第一导电类型的半导体区域的一部分为电荷累积区域。

4. 发明授权

US08698208B2 Photoelectric conversion device 有权
标题翻译：光电转换装置
公开(公告)号：US08698208B2
公开(公告)日：2014-04-15
申请号：US13431113
申请日：2012-03-27
申请人： Ryuichi Mishima , Mineo Shimotsusa , Hiroaki Naruse
发明人： Ryuichi Mishima , Mineo Shimotsusa , Hiroaki Naruse
IPC分类号： H01L27/146 , H01L27/30
CPC分类号： H01L27/307 , H01L27/14603 , H01L27/14625 , H01L27/14643 , H01L27/14689
摘要： A manufacturing method of a photoelectric conversion device comprises a first step of forming a gate electrode, a second step of forming a semiconductor region of a first conductivity type, a third step of forming an insulation film, and a fourth step of forming a protection region of a second conductivity type, which is the opposite conductivity type to the first conductivity type, by implanting ions in the semiconductor region using the gate electrode of the transfer transistor and a portion covering a side face of the gate electrode of the transfer transistor of the insulation film as a mask in a state in which the semiconductor substrate and the gate electrode of the transfer transistor are covered by the insulation film, and causing a portion of the semiconductor region of the first conductivity type from which the protection region is removed to be the charge accumulation region.
摘要翻译：光电转换装置的制造方法包括形成栅电极的第一工序，形成第一导电型的半导体区域的第二工序，形成绝缘膜的第三工序，形成保护区域的第四工序第二导电类型与第一导电类型相反的导电类型，通过使用转移晶体管的栅电极在半导体区域中注入离子，以及覆盖转移晶体管的转移晶体管的栅电极的侧面的部分在半导体基板和转移晶体管的栅电极被绝缘膜覆盖的状态下作为掩模的绝缘膜，并且使保护区域被去除的第一导电类型的半导体区域的一部分为电荷累积区域。

5. 发明申请

US20110171770A1 MANUFACTURING METHOD OF A PHOTOELECTRIC CONVERSION DEVICE 有权
标题翻译：光电转换装置的制造方法
公开(公告)号：US20110171770A1
公开(公告)日：2011-07-14
申请号：US13073321
申请日：2011-03-28
申请人： Ryuichi Mishima , Mineo Shimotsusa , Hiroaki Naruse
发明人： Ryuichi Mishima , Mineo Shimotsusa , Hiroaki Naruse
IPC分类号： H01L31/18
CPC分类号： H01L27/307 , H01L27/14603 , H01L27/14625 , H01L27/14643 , H01L27/14689
摘要： A manufacturing method of a photoelectric conversion device included a first step of forming a gate electrode, a second step of forming a semiconductor region of a first conductivity type, a third step of forming an insulation film, and a fourth step of forming a protection region of a second conductivity type, which is the opposite conductivity type to the first conductivity type, by implanting ions in the semiconductor region using the gate electrode of the transfer transistor and a portion covering a side face of the gate electrode of the transfer transistor of the insulation film as a mask in a state in which the semiconductor substrate and the gate electrode of the transfer transistor are covered by the insulation film, and causing a portion of the semiconductor region of the first conductivity type from which the protection region is removed to be the charge accumulation region.
摘要翻译：光电转换装置的制造方法包括形成栅电极的第一工序，形成第一导电型半导体区域的第二工序，形成绝缘膜的第三工序，形成保护区域的第四工序第二导电类型与第一导电类型相反的导电类型，通过使用转移晶体管的栅电极在半导体区域中注入离子，以及覆盖转移晶体管的转移晶体管的栅电极的侧面的部分在半导体基板和转移晶体管的栅电极被绝缘膜覆盖的状态下作为掩模的绝缘膜，并且使保护区域被去除的第一导电类型的半导体区域的一部分为电荷累积区域。

6. 发明授权

US07935557B2 Manufacturing method of a photoelectric conversion device 有权
标题翻译：光电转换装置的制造方法
公开(公告)号：US07935557B2
公开(公告)日：2011-05-03
申请号：US12622747
申请日：2009-11-20
申请人： Ryuichi Mishima , Mineo Shimotsusa , Hiroaki Naruse
发明人： Ryuichi Mishima , Mineo Shimotsusa , Hiroaki Naruse
IPC分类号： H01L21/266 , H01L21/339
CPC分类号： H01L27/307 , H01L27/14603 , H01L27/14625 , H01L27/14643 , H01L27/14689
摘要： A manufacturing method of a photoelectric conversion device included a first step of forming a gate electrode, a second step of forming a semiconductor region of a first conductivity type, a third step of forming an insulation film, and a fourth step of forming a protection region of a second conductivity type, which is the opposite conductivity type to the first conductivity type, by implanting ions in the semiconductor region using the gate electrode of the transfer transistor and a portion covering a side face of the gate electrode of the transfer transistor of the insulation film as a mask in a state in which the semiconductor substrate and the gate electrode of the transfer transistor are covered by the insulation film, and causing a portion of the semiconductor region of the first conductivity type from which the protection region is removed to be the charge accumulation region.
摘要翻译：光电转换装置的制造方法包括形成栅电极的第一工序，形成第一导电型半导体区域的第二工序，形成绝缘膜的第三工序，形成保护区域的第四工序第二导电类型与第一导电类型相反的导电类型，通过使用转移晶体管的栅电极在半导体区域中注入离子，以及覆盖转移晶体管的转移晶体管的栅电极的侧面的部分在半导体基板和转移晶体管的栅电极被绝缘膜覆盖的状态下作为掩模的绝缘膜，并且使保护区域被去除的第一导电类型的半导体区域的一部分为电荷累积区域。

7. 发明授权

US09252169B2 Solid-state imaging device and imaging system 有权
标题翻译：固态成像装置和成像系统
公开(公告)号：US09252169B2
公开(公告)日：2016-02-02
申请号：US13807084
申请日：2011-06-22
申请人： Masahiro Kobayashi , Mineo Shimotsusa
发明人： Masahiro Kobayashi , Mineo Shimotsusa
IPC分类号： H01L27/146 , H01L27/02 , H01L27/28
CPC分类号： H01L27/14689 , H01L27/0255 , H01L27/0296 , H01L27/146 , H01L27/14636 , H01L27/1464 , H01L27/14645 , H01L27/14685 , H01L27/288
摘要： A solid-state imaging device includes: a first semiconductor substrate including a photoelectric conversion element; and a second semiconductor substrate including at least a part of a peripheral circuit arranged in a main face of the second semiconductor substrate, the peripheral circuit generating a signal based on the charge of the photoelectric conversion element, a main face of the first semiconductor substrate and the main face of the second semiconductor substrate being opposed to each other with sandwiching a wiring structure therebetween; a pad to be connected to an external terminal; and a protection circuit electrically connected to the pad and to the peripheral circuit, wherein the protection circuit is arranged in the main face of the second semiconductor substrate.
摘要翻译：固态成像装置包括：包括光电转换元件的第一半导体衬底; 以及第二半导体衬底，包括布置在第二半导体衬底的主面中的外围电路的至少一部分，外围电路基于光电转换元件的电荷，第一半导体衬底的主面和所述第二半导体衬底的主面通过在其间夹着布线结构相互相对; 要连接到外部端子的焊盘; 以及保护电路，电连接到所述焊盘和所述外围电路，其中所述保护电路布置在所述第二半导体衬底的主面中。

8. 发明授权

US09029967B2 Solid-state image pickup device having waveguides in light-receiving and light-shielding areas 有权
标题翻译：在光接收和遮光区域中具有波导的固态图像拾取装置
公开(公告)号：US09029967B2
公开(公告)日：2015-05-12
申请号：US13362649
申请日：2012-01-31
申请人： Mineo Shimotsusa , Masahiro Kobayashi
发明人： Mineo Shimotsusa , Masahiro Kobayashi
IPC分类号： H01L31/0232 , H01L27/146
CPC分类号： H01L27/14623 , H01L27/14614 , H01L27/14621 , H01L27/14625 , H01L27/14629 , H01L27/14636 , H01L27/14638 , H01L27/14643 , H01L27/14645 , H01L27/14685 , H01L27/14689
摘要： A solid-state image pickup device includes a semiconductor substrate in which photoelectric conversion units are arranged. An insulator is disposed on the semiconductor substrate. The insulator has holes associated with the respective photoelectric conversion units. Members are arranged in the respective holes. A light-shielding member is disposed on the opposite side of one of the members from the semiconductor substrate, such that only the associated photoelectric conversion unit is shielded from light. In the solid-state image pickup device, the holes are simultaneously formed and the members are simultaneously formed.
摘要翻译：固体摄像装置包括其中布置有光电转换单元的半导体衬底。绝缘体设置在半导体衬底上。绝缘体具有与各个光电转换单元相关联的孔。会员排列在相应的孔中。遮光构件设置在与半导体基板的一个构件的相对侧上，使得只有相关联的光电转换单元被遮光。在固态图像拾取装置中，同时形成孔并且同时形成构件。

9. 发明授权

US08947566B2 Solid-state imaging apparatus and manufacturing method of solid-state imaging apparatus 有权
公开(公告)号：US08947566B2
公开(公告)日：2015-02-03
申请号：US13807107
申请日：2011-06-22
申请人： Masahiro Kobayashi , Mineo Shimotsusa
发明人： Masahiro Kobayashi , Mineo Shimotsusa
IPC分类号： H04N5/335 , H04N3/14 , H01L31/062 , H01L31/0224 , H01L27/146 , H01L31/18
CPC分类号： H01L27/1469 , H01L21/76898 , H01L27/14632 , H01L27/14636 , H01L27/1464 , H01L27/14645 , H01L27/14685 , H01L27/14687 , H01L31/0224 , H01L31/18
摘要： The first face of the pad is situated between the front-side face of the second semiconductor substrate and a hypothetical plane including and being parallel to the front-side face, and a second face of the pad that is a face on the opposite side of the first face is situated between the first face and the front-side face of the second semiconductor substrate, and wherein the second face is connected to the wiring structure so that the pad is electrically connected to the circuit arranged in the front-side face of the second semiconductor substrate via the wiring structure.

10. 发明申请

US20130107075A1 SOLID-STATE IMAGING DEVICE AND IMAGING SYSTEM 有权
标题翻译：固态成像装置和成像系统
公开(公告)号：US20130107075A1
公开(公告)日：2013-05-02
申请号：US13807084
申请日：2011-06-22
申请人： Masahiro Kobayashi , Mineo Shimotsusa
发明人： Masahiro Kobayashi , Mineo Shimotsusa
IPC分类号： H01L27/146
CPC分类号： H01L27/14689 , H01L27/0255 , H01L27/0296 , H01L27/146 , H01L27/14636 , H01L27/1464 , H01L27/14645 , H01L27/14685 , H01L27/288
摘要： A solid-state imaging device includes: a first semiconductor substrate including a photoelectric conversion element; and a second semiconductor substrate including at least a part of a peripheral circuit arranged in a main face of the second semiconductor substrate, the peripheral circuit generating a signal based on the charge of the photoelectric conversion element, a main face of the first semiconductor substrate and the main face of the second semiconductor substrate being opposed to each other with sandwiching a wiring structure therebetween; a pad to be connected to an external terminal; and a protection circuit electrically connected to the pad and to the peripheral circuit, wherein the protection circuit is arranged in the main face of the second semiconductor substrate.
摘要翻译：固态成像装置包括：包括光电转换元件的第一半导体衬底; 以及第二半导体衬底，包括布置在第二半导体衬底的主面中的外围电路的至少一部分，外围电路基于光电转换元件的电荷，第一半导体衬底的主面和所述第二半导体衬底的主面通过在其间夹着布线结构相互相对; 要连接到外部端子的焊盘; 以及保护电路，电连接到所述焊盘和所述外围电路，其中所述保护电路布置在所述第二半导体衬底的主面中。

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