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31. 发明申请

US20080064212A1 Method of manufacturing semiconductor device 审中-公开
标题翻译：制造半导体器件的方法
公开(公告)号：US20080064212A1
公开(公告)日：2008-03-13
申请号：US11892634
申请日：2007-08-24
申请人： Yoshihiro Ogawa , Masahiro Kiyotoshi , Katsuhiko Tachibana , Hiroyasu Iimori , Hiroaki Yamada , Kaori Umezawa , Hiroshi Tomita , Atsuko Kawasaki
发明人： Yoshihiro Ogawa , Masahiro Kiyotoshi , Katsuhiko Tachibana , Hiroyasu Iimori , Hiroaki Yamada , Kaori Umezawa , Hiroshi Tomita , Atsuko Kawasaki
IPC分类号： H01L21/311 , H01L21/31
CPC分类号： H01L21/3125 , C23C18/122 , C23C18/1287 , H01L21/02164 , H01L21/02222 , H01L21/02282 , H01L21/02337 , H01L21/02343 , H01L21/316 , H01L21/3165 , H01L21/67086
摘要： A method of manufacturing a semiconductor device, has applying perhydro polysilazane to a substrate; and immersing at least the surface of said substrate to which perhydro polysilazane is applied in a mixture containing water heated to 120 degrees C. or higher to which ultrasound is applied, thereby modifying the perhydro polysilazane into silicon oxide.
摘要翻译：一种半导体器件的制造方法，将全氢化硅氮烷应用于基板; 并将至少将所述基板的表面施加于含有加氢至120℃以上的水的混合物中，在该混合物中施加全羟基聚硅氮烷，从而将全氟聚硅氮烷改性为氧化硅。

32. 发明授权

US07335562B2 Method of manufacturing semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US07335562B2
公开(公告)日：2008-02-26
申请号：US11494736
申请日：2006-07-28
申请人： Takuya Kobayashi , Katsuyuki Sekine , Tomonori Aoyama , Hiroshi Tomita
发明人： Takuya Kobayashi , Katsuyuki Sekine , Tomonori Aoyama , Hiroshi Tomita
IPC分类号： H01L21/336
CPC分类号： H01L21/02148 , C23C16/401 , H01L21/02271 , H01L21/0234 , H01L21/31645 , H01L21/823462 , H01L21/823857 , H01L29/517 , H01L29/66553 , H01L29/6656
摘要： A method of manufacturing a semiconductor device includes forming a trench in an interlayer dielectric film on the semiconductor substrate, the trench reaching a semiconductor substrate and having a sidewall made of silicon nitride film; depositing a gate insulation film made of a HfSiO film at a temperature within a range of 200 degrees centigrade to 260 degrees centigrade, so that the HfSiO film is deposited on the semiconductor substrate which is exposed at a bottom surface of the trench without depositing the HfSiO film on the silicon nitride film; and filling the trench with a gate electrode made of metal.
摘要翻译：制造半导体器件的方法包括在半导体衬底上的层间电介质膜中形成沟槽，沟槽到达半导体衬底并具有由氮化硅膜制成的侧壁; 在200摄氏度至260摄氏度的温度范围内沉积由HfSiO膜制成的栅极绝缘膜，使得HfSiO膜沉积在暴露于沟槽底表面的半导体衬底上，而不沉积HfSiO 膜上的氮化硅膜; 并用金属制成的栅电极填充沟槽。

33. 发明授权

US07322557B2 Chemical liquid control valve 有权
标题翻译：化学液体控制阀
公开(公告)号：US07322557B2
公开(公告)日：2008-01-29
申请号：US11417133
申请日：2006-05-04
申请人： Toshiyuki Nagao , Shigeru Osugi , Hiroshi Tomita
发明人： Toshiyuki Nagao , Shigeru Osugi , Hiroshi Tomita
IPC分类号： F16K31/44
CPC分类号： F16K27/02 , F16K1/42
摘要： A chemical liquid control valve is provided with a barrier on an outer circumferential end portion of a protruding part (an outer circumferential bottom portion of a valve seat). The barrier is placed so that an angle between the center line of an outlet passage and the line extending between the center of a valve port and each end of the barrier. The barrier is designed to have a height relative to a contact surface of the valve seat with a valve element is substantially half of the travel distance of a diaphragm valve element.
摘要翻译：化学液体控制阀在突出部（阀座的外周底部）的外周端部设置有阻挡物。隔离物被放置成使得出口通道的中心线与在阀口的中心与屏障的每个端部之间延伸的线之间的角度。阻挡件被设计为具有相对于阀座的接触表面的高度，阀元件基本上是隔膜阀元件的移动距离的一半。

34. 发明申请

US20070224792A1 Manufacturing method of semiconductor device and etching solution 失效
标题翻译：半导体器件和蚀刻溶液的制造方法
公开(公告)号：US20070224792A1
公开(公告)日：2007-09-27
申请号：US11702575
申请日：2007-02-06
申请人： Hiroshi Tomita , Hiroyasu Iimori
发明人： Hiroshi Tomita , Hiroyasu Iimori
IPC分类号： H01L21/465 , C09K13/08
CPC分类号： H01L21/02071 , C09K13/08 , H01L21/0206 , H01L21/31111
摘要： This disclosure concerns a manufacturing method of a semiconductor device comprising an etching process using an etching solution having ozone dissolved by 10 ppm or more into a liquid containing H2SO4 by 86 wt % to 97.9 wt %, HF by 0.1 wt % to 10 wt %, and H2O by 2 wt % to 4 wt %.
摘要翻译：本公开涉及一种半导体器件的制造方法，其包括使用具有溶解在10ppm以上的臭氧的蚀刻溶液的含有H 2 SO 4的液体的蚀刻工艺86 重量％至97.9重量％，HF为0.1重量％至10重量％，H 2 O 2为2重量％至4重量％。

35. 发明申请

US20070201106A1 Optimum noise filter setting for a scanner in a closed loop system 有权
标题翻译：闭环系统中扫描仪的最佳噪声滤波器设置
公开(公告)号：US20070201106A1
公开(公告)日：2007-08-30
申请号：US11364439
申请日：2006-02-28
申请人： Paul Cattrone , Hiroshi Tomita , Vivek Pathak
发明人： Paul Cattrone , Hiroshi Tomita , Vivek Pathak
IPC分类号： H04N1/40
CPC分类号： H04N1/4078 , H04N1/409
摘要： Disclosed is a method for determining optimum noise filter setting to be used by a scanner in a system including a printer and a detector forming a closed loop system. A test image including a plurality of horizontal lines, vertical lines, slanted lines and dots are printed using the printer and scanned back using the scanner. The scanned test image data is compared to the input test image data representing the test image, and based on such comparison, the optimum noise filter setting for the printer/scanner pair is determined and stored for future use. This method is particularly useful for printing barcodes having high data capacity.
摘要翻译：公开了一种用于确定由包括打印机和形成闭环系统的检测器的系统中的扫描仪使用的最佳噪声滤波器设置的方法。使用打印机打印包括多个水平线，垂直线，倾斜线和点的测试图像，并使用扫描仪进行扫描。将扫描的测试图像数据与表示测试图像的输入测试图像数据进行比较，并且基于这样的比较，确定并存储打印机/扫描仪对的最佳噪声滤波器设置以备将来使用。该方法对于打印具有高数据容量的条形码特别有用。

36. 发明申请

US20070182955A1 SUBSTRATE DEFECT INSPECTION METHOD, COMPUTER READABLE STORAGE MEDIUM, AND DEFECT INSPECTION APPARATUS 有权
标题翻译：基板缺陷检查方法，计算机可读存储介质和缺陷检查装置
公开(公告)号：US20070182955A1
公开(公告)日：2007-08-09
申请号：US11626028
申请日：2007-01-23
申请人： Hiroshi Tomita , Shinichi Shinozuka
发明人： Hiroshi Tomita , Shinichi Shinozuka
IPC分类号： G01N21/00
CPC分类号： G06T7/001 , G03F7/7065 , G06T2207/30148
摘要： In the present invention, data on a substrate image picked up by an image pickup unit is outputted to a difference calculation unit where a difference image from a normal substrate is calculated. A synthesis calculation unit calculates a synthesized image by rotating the difference image 360 degrees by every predetermined angle about the center of the substrate and synthesizing the images. A Zernike calculation unit digitizes the synthesized image by a Zernike polynomial and outputs a concentric circle component to a determination unit where the component is compared with a previously set threshold value, so that the presence or absence of a defect on the substrate is determined. The present invention can facilitate the determination of the presence or absence of a macro defect on the substrate and reduce the time required for the determination.
摘要翻译：在本发明中，由摄像单元拾取的基板图像上的数据被输出到差分计算单元，其中计算出与正常基板的差分图像。合成计算单元通过围绕基板的中心以预定的角度360度旋转差分图像来合成图像来计算合成图像。 Zernike计算单元通过Zernike多项式数字化合成图像，并将同心圆分量输出到确定单元，其中将分量与先前设置的阈值进行比较，从而确定基板上存在或不存在缺陷。本发明可以有助于确定基板上的宏观缺陷的存在或不存在，并且减少确定所需的时间。

37. 发明申请

US20070182814A1 Defect inspection method, defect inspection system, and computer readable storage medium 有权
标题翻译：缺陷检查方法，缺陷检查系统和计算机可读存储介质
公开(公告)号：US20070182814A1
公开(公告)日：2007-08-09
申请号：US11656956
申请日：2007-01-24
申请人： Makoto Hayakawa , Hiroshi Tomita
发明人： Makoto Hayakawa , Hiroshi Tomita
IPC分类号： H04N7/18
CPC分类号： G01N21/9501
摘要： In the present invention, an image of a substrate is picked up by an image pickup unit with the substrate being held by a transfer member. A drive unit for the transfer member is controlled by a driving signal from a first controller. A driving signal outputted to the first controller is outputted also to a second controller so that the second controller controls the image pickup unit based on the driving signal, thereby synchronizing drive of the transfer member with the image pickup by the image pickup unit. According to the present invention, the throughput in performing a defect inspection for the substrate is improved and a precise image is captured and subjected to accurate inspection.
摘要翻译：在本发明中，基板被转印部件保持的图像拾取单元拾取基板的图像。用于传送构件的驱动单元由来自第一控制器的驱动信号控制。输出到第一控制器的驱动信号也输出到第二控制器，使得第二控制器基于驱动信号控制图像拾取单元，由此通过图像拾取单元使传送部件与图像拾取器的驱动同步。根据本发明，提高了对基板进行缺陷检查的吞吐量，并捕获精确的图像并进行了精确的检查。

38. 发明申请

US20070150169A1 Navigation systems, methods, and programs 失效
标题翻译：导航系统，方法和程序
公开(公告)号：US20070150169A1
公开(公告)日：2007-06-28
申请号：US11640318
申请日：2006-12-18
申请人： Hiroshi Tomita , Kenji Nagase
发明人： Hiroshi Tomita , Kenji Nagase
IPC分类号： G08G1/00
CPC分类号： G01C21/3691 , G08G1/096844
摘要： Vehicle navigation systems, methods, and programs, receive traffic information. The systems, methods, and programs determine whether there is a controlled road link within a predetermined distance of the vehicle and determine whether there is congestion information that begins with the controlled road link based on the received traffic information. The systems, methods, and programs provide, if the congestion information indicates that traffic congestion begins at the controlled link, guidance including traffic congestion guidance, the traffic congestion guidance indicating that the traffic congestion begins at the controlled road link.
摘要翻译：车辆导航系统，方法和程序，接收交通信息。系统，方法和程序确定在车辆的预定距离内是否存在受控的道路连接，并且基于所接收的交通信息来确定是否存在以受控道路链路开始的拥堵信息。系统，方法和程序如果拥塞信息指示在受控链路处开始交通拥堵，则提供包括交通拥堵指导在内的指导，指示交通拥堵在受控道路链路处开始。

39. 发明申请

US20070095363A1 Substrate cleaning apparatus and substrate cleaning method 失效
标题翻译：基板清洗装置和基板清洗方法
公开(公告)号：US20070095363A1
公开(公告)日：2007-05-03
申请号：US11588393
申请日：2006-10-27
申请人： Hiroshi Tomita , Hiroaki Yamada , Kunihiro Miyazaki , Hajime Onoda
发明人： Hiroshi Tomita , Hiroaki Yamada , Kunihiro Miyazaki , Hajime Onoda
IPC分类号： C23G1/00 , B08B7/04 , B08B3/00 , C03C23/00
CPC分类号： H01L21/67057 , B08B3/08 , B08B3/10
摘要： A substrate cleaning apparatus, comprises a process tank that holds a mixture containing a hydrogen peroxide solution and sulfuric acid and is used for cleaning a substrate immersed in said mixture; circulation piping that extends between a primary side of said process tank on which said mixture is injected into said process tank and a secondary side of said process tank on which said mixture is discharged from said process tank and has a pump for causing circulation of said mixture; a heater disposed in said circulation piping configured to heat said mixture to a predetermined temperature; a chemical injection pipe configured to inject a hydrogen peroxide solution into said circulation piping at a position between the primary side of said process tank and a secondary side, which is a downstream side, of said heater; and a filter disposed in said circulation piping configured to remove particles in said mixture.
摘要翻译：一种基板清洗装置，包括保持含有过氧化氢溶液和硫酸的混合物的处理罐，用于清洗浸在所述混合物中的基板; 所述循环管道在所述处理罐的初级侧之间延伸，所述处理罐的所述混合物被注入到所述处理罐中，所述处理罐的二次侧在所述处理罐的二次侧上从所述处理罐排出所述混合物，并且具有用于使所述混合物循环的泵 ; 设置在所述循环管道中的加热器，被配置为将所述混合物加热至预定温度; 化学注入管，被配置为在所述处理罐的初级侧和位于所述加热器的下游侧的次级侧之间的位置处将过氧化氢溶液注入到所述循环管道中; 以及设置在所述循环管道中的过滤器，其构造成去除所述混合物中的颗粒。

40. 发明申请

US20070093032A1 Method of manufacturing semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US20070093032A1
公开(公告)日：2007-04-26
申请号：US11494736
申请日：2006-07-28
申请人： Takuya Kobayashi , Katsuyuki Sekine , Tomonori Aoyama , Hiroshi Tomita
发明人： Takuya Kobayashi , Katsuyuki Sekine , Tomonori Aoyama , Hiroshi Tomita
IPC分类号： H01L21/336
CPC分类号： H01L21/02148 , C23C16/401 , H01L21/02271 , H01L21/0234 , H01L21/31645 , H01L21/823462 , H01L21/823857 , H01L29/517 , H01L29/66553 , H01L29/6656
摘要： A method of manufacturing a semiconductor device includes forming a trench in an interlayer dielectric film on the semiconductor substrate, the trench reaching a semiconductor substrate and having a sidewall made of silicon nitride film; depositing a gate insulation film made of a HfSiO film at a temperature within a range of 200 degrees centigrade to 260 degrees centigrade, so that the HfSiO film is deposited on the semiconductor substrate which is exposed at a bottom surface of the trench without depositing the HfSiO film on the silicon nitride film; and filling the trench with a gate electrode made of metal.
摘要翻译：制造半导体器件的方法包括在半导体衬底上的层间电介质膜中形成沟槽，沟槽到达半导体衬底并具有由氮化硅膜制成的侧壁; 在200摄氏度至260摄氏度的温度范围内沉积由HfSiO膜制成的栅极绝缘膜，使得HfSiO膜沉积在暴露于沟槽底表面的半导体衬底上，而不沉积HfSiO 膜上的氮化硅膜; 并用金属制成的栅电极填充沟槽。

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