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31. 发明申请

US20060035107A1 Aluminum nitride sintered body 失效
标题翻译：氮化铝烧结体
公开(公告)号：US20060035107A1
公开(公告)日：2006-02-16
申请号：US11198009
申请日：2005-08-04
申请人： Masuhiro Natsuhara , Kenji Shinma , Hirohiko Nakata
发明人： Masuhiro Natsuhara , Kenji Shinma , Hirohiko Nakata
IPC分类号： B32B15/01
CPC分类号： C04B35/581 , C04B35/62655 , C04B35/645 , C04B2235/3225 , C04B2235/5409 , C04B2235/5445 , C04B2235/608 , C04B2235/6584 , C04B2235/668 , C04B2235/72 , C04B2235/724 , C04B2235/963 , C04B2235/9692 , Y10T428/12736
摘要： In an aluminum nitride sintered body, the bismuth and chlorine contents are restricted to be no more than fixed amounts. More specifically, in an aluminum nitride sintered body having aluminum nitride as its main component, the bismuth content in the aluminum nitride sintered body is no more than 30 ppm and the chlorine content is no more than 100 ppm. It would be preferable to form a resistance heating body on the aluminum nitride sintered body, and it would be preferable for the aluminum nitride sintered body to be used as a semiconductor heating part.
摘要翻译：在氮化铝烧结体中，铋和氯的含量被限定为不大于固定量。更具体地说，在以氮化铝为主要成分的氮化铝烧结体中，氮化铝烧结体中的铋含量不超过30ppm，氯含量不大于100ppm。优选在氮化铝烧结体上形成电阻加热体，优选将氮化铝烧结体用作半导体加热部。

32. 发明申请

US20050170651A1 Semiconductor manufacturing apparatus 有权
标题翻译：半导体制造装置
公开(公告)号：US20050170651A1
公开(公告)日：2005-08-04
申请号：US10987304
申请日：2004-11-15
申请人： Kenji Shinma , Hirohiko Nakata , Masuhiro Natsuhara
发明人： Kenji Shinma , Hirohiko Nakata , Masuhiro Natsuhara
IPC分类号： H05B3/10 , C23C16/458 , H01L21/00 , H01L21/027 , H01L21/205 , H01L21/302 , H01L21/461 , H01L21/68 , H01L21/683 , H05B3/74
CPC分类号： C23C16/4586 , H01L21/67109
摘要： To provide a semiconductor manufacturing device, which is provided with a wafer holder capable of improving the cooling rate of a heater and retaining the homogeneity of the temperature distribution of the heater at cooling time and which can markedly shorten the time period for treating a semiconductor wafer. The wafer holder includes the heater 1 for carrying the semiconductor wafer thereon to heat the same, and the cooling block 2 for cooling the heater 1. The cooling block 2 is arranged so as to come into and out of abutment against the back 1b of the heater on the side opposed to the wafer carrying face 1a, and its abutment face 2a to abut against the heater 1 has a warpage of 1 mm or less. The cooling block 2 can be provided therein with a passage for a cooling liquid. It is preferred that the passage has a sectional area of 1 mm2 or larger over 80% of its entire length, and that the area of the portion having the passage formed is 3% or larger of the entire area of the abutment face 2a.
摘要翻译：为了提供一种半导体制造装置，其具有能够提高加热器的冷却速度的晶片保持器，并且保持加热器的冷却时间的温度分布的均匀性，并且可以显着缩短处理半导体晶片的时间周期。晶片保持器包括用于在其上承载半导体晶片以加热其的加热器1和用于冷却加热器1的冷却块2。冷却块2被布置成在与晶片承载面1a相对的一侧进入和离开加热器的背面1b，并且其抵靠加热器1的邻接面2a具有翘曲为1mm以下。冷却块2可以在其中设置有用于冷却液体的通道。优选的是，通道的截面面积为其整个长度的80％以上的1mm 2以上，并且具有通路形状的部分的面积为整体的3％以上邻接面2a的区域。

33. 发明申请

US20050167422A1 Ceramics heater for semiconductor production system 审中-公开
标题翻译：陶瓷加热器用于半导体生产系统
公开(公告)号：US20050167422A1
公开(公告)日：2005-08-04
申请号：US10500736
申请日：2003-03-20
申请人： Yoshifumi Kachi , Akira Kuibira , Hirohiko Nakata
发明人： Yoshifumi Kachi , Akira Kuibira , Hirohiko Nakata
IPC分类号： H05B3/20 , H01L21/00 , H01L21/02 , H01L21/687 , H05B3/10 , H05B3/12 , H05B3/14 , H05B3/18 , H05B3/74
CPC分类号： H01L21/68757 , H01L21/67103 , H05B3/143
摘要： For semiconductor manufacturing equipment a ceramic susceptor is made available in which the temperature uniformity in the surface of a wafer during heating operations is enhanced by keeping fluctuations in the shape of the susceptor—particularly in the outer diameter along the thickness at normal temperature—under control. The ceramic susceptor (1) for semiconductor manufacturing equipment has a resistive heating element (3) on a surface of or inside ceramic substrates (2a), (2b). The difference between the maximum outer diameter and minimum outer diameter along the thickness of the ceramic susceptor when not heating is 0.8% or less of the average diameter along the wafer-support side. A plasma electrode may be arranged on a surface of or inside the ceramic substrates (2a), (2b) of the ceramic susceptor (1). The ceramic substrates (2a), (2b) are preferably made of at least one selected from aluminum nitride, silicon nitride, aluminum oxynitride, and silicon carbide.
摘要翻译：对于半导体制造设备，可以提供陶瓷感受体，其中通过保持基座形状的波动（特别是在正常温度下的厚度的外径）来控制加热操作期间晶片表面的温度均匀性 - 在控制下。用于半导体制造设备的陶瓷感受体（1）在陶瓷基板（2a），（2b）的表面上或内部具有电阻加热元件（3）。沿着不加热时的陶瓷基座的厚度的最大外径和最小外径之间的差异为晶片支撑侧的平均直径的0.8％以下。等离子体电极可以布置在陶瓷基座（1）的陶瓷基板（2a），（2b）的表面上或内部。陶瓷基板（2a），（2b）优选由选自氮化铝，氮化硅，氮氧化铝和碳化硅中的至少一种制成。

34. 发明申请

US20050166848A1 Wafer holder and semiconductor manufacturing apparatus 审中-公开
标题翻译：晶圆支架和半导体制造装置
公开(公告)号：US20050166848A1
公开(公告)日：2005-08-04
申请号：US10503784
申请日：2003-09-26
申请人： Masuhiro Natsuhara , Hirohiko Nakata , Akira Kuibira , Manabu Hashikura
发明人： Masuhiro Natsuhara , Hirohiko Nakata , Akira Kuibira , Manabu Hashikura
IPC分类号： H01L21/00 , H01L21/687 , H05B3/14 , C23C16/00 , B05C13/00 , B05C13/02 , B05C21/00
CPC分类号： H01L21/68792 , H01L21/67103 , H05B3/143
摘要： A wafer holder furnished with a plurality of anchored tubular pieces and/or anchored support pieces affixed to the holder's ceramic susceptor and in which damage to the anchored tubular pieces due to thermal stress during heating operations is prevented, and a high-reliability semiconductor manufacturing apparatus utilizing the wafer holder are made available. One end of at least two of the anchored tubular pieces (5) and/or anchored support pieces is affixed to the ceramic susceptor (2) and the other end is fixed in the reaction chamber (4), wherein letting the highest temperature the ceramic susceptor (2) attains be T1, the thermal expansion coefficient of the ceramic susceptor (2) be α1, the highest temperature the reaction chamber (4) attains be T2, the thermal expansion coefficient of the reaction chamber (4) be α2, the longest inter-piece distance on the ceramic susceptor (2) among the plurality of anchored tubular pieces (5) and/or anchored support pieces at normal temperature be L1, and the longest inter-piece distance on the reaction chamber (4) among the plurality of anchored tubular pieces (5) and/or anchored support pieces at normal temperature be L2, then the relational formula |(T1×α1×L1)−(T2×α2×L2)|≦0.7 mm is satisfied.
摘要翻译：一种晶片保持器，其配备有多个固定在保持器的陶瓷基座上的锚固的管状件和/或锚定的支撑件，并且其中由于加热操作期间的热应力而损坏锚定的管状件，并且高可靠性的半导体制造装置使用晶片保持器可用。至少两个锚固的管状件（5）和/或锚固的支撑件的一端固定在陶瓷基座（2）上，另一端固定在反应室（4）中，其中使最高温度的陶瓷基座（2）达到T1，陶瓷基座（2）的热膨胀系数为α1，反应室（4）达到最高温度为T2，反应室（4）的热膨胀系数为α2，多个锚定管状件（5）中的陶瓷基座（2）和常规温度下的固定支撑件之间的最长间隔距离为L1，反应室（4）中最长的间隔距离为在常温下多个锚定的管状件（5）和/或锚定的支撑件为L2，则满足关系式|（T1xalpha1xL1） - （T2xalpha2xL2）| <= 0.7mm。

35. 发明申请

US20050160989A1 WORKPIECE HOLDER FOR SEMICONDUCTOR MANUFACTURING APPARATUS 审中-公开
标题翻译：半导体制造设备的工作夹具
公开(公告)号：US20050160989A1
公开(公告)日：2005-07-28
申请号：US10249473
申请日：2003-04-14
申请人： Akira Kuibira , Masuhiro Natsuhara , Hirohiko Nakata
发明人： Akira Kuibira , Masuhiro Natsuhara , Hirohiko Nakata
IPC分类号： H05B3/06 , H01L21/00 , H01L21/02 , H01L21/027 , H01L21/683 , H01L21/687 , H05B3/10 , H05B3/74 , C23C16/00
CPC分类号： H01L21/67103
摘要： Semiconductor-manufacturing-apparatus workpiece holder whose wafer-retaining surface is superior in isothermal properties, and that is suitable for use in thermosetting of photolithographic photoresists in coater/developers, and in baking of low dielectric constant, i.e. low-k, insulating films. The workpiece holder is made up of a wafer holder 1, and a support member 4 that supports the wafer holder 1, and features the thermal conductivity of the support member 4 being lower than the thermal conductivity of the wafer holder 1. The wafer holder 1 and the support member 4 either are not joined, or if joined are made to have a difference in thermal expansion coefficient of 2.0×10−6/° C. or less. The chief component of the wafer holder 1 preferably is AlN, and of the support member 4, mullite.
摘要翻译：半导体制造装置工件保持器，其晶片保持表面的等温性能优异，并且适用于涂布机/显影剂中的光刻光刻胶的热固化和低介电常数即低k绝缘膜的烘烤。工件保持器由晶片保持器1和支撑晶片保持器1的支撑构件4构成，其特征在于支撑构件4的热导率低于晶片保持器1的热导率。晶片保持器1和支撑构件4也不接合，或者如果接合的热膨胀系数差为2.0×10 -6 /℃以下。晶片保持器1的主要部件优选为AlN，并且支撑部件4为莫来石。

36. 发明授权

US06881128B1 Ceramics base plate and method for producing the same 失效
标题翻译：陶瓷基板及其制造方法
公开(公告)号：US06881128B1
公开(公告)日：2005-04-19
申请号：US09342537
申请日：1999-06-29
申请人： Masuhiro Natsuhara , Hirohiko Nakata
发明人： Masuhiro Natsuhara , Hirohiko Nakata
IPC分类号： B26F3/00 , B28B17/00 , B28D1/00 , C04B35/71 , B24B1/00 , B28D1/02
CPC分类号： B28B17/0018 , Y10T225/12
摘要： A method of producing ceramics base plates is disclosed, comprising forming a continuous flaw on at least one surface of a ceramics sintered base plate from end to end using a flawing tool and dividing the ceramics sintered base plate along the flaw by applying an external force. It is preferred that a blade edge portion of the flawing tool is made of a cemented carbide or diamond. By the method of the invention, the ceramics sintered base plate can be easily divided, and ceramics base plates excellent in dimensional accuracy are obtained without lowering the strength thereof.
摘要翻译：公开了一种陶瓷基板的制造方法，其特征在于，使用有缺陷的工具，在陶瓷烧结基板的至少一个表面上形成连续的缺陷，并通过施加外力将所述陶瓷烧结基板沿着所述缺陷分割。优选的是，有缺陷的工具的刀刃部分由硬质合金或金刚石制成。通过本发明的方法，可以容易地分割陶瓷烧结基板，并且在不降低其强度的情况下获得尺寸精度优异的陶瓷基板。

37. 发明申请

US20050022744A1 Susceptor for Semiconductor Manufacturing Equipment, and Semiconductor Manufacturing Equipment in Which the Susceptor Is Installed 审中-公开
标题翻译：半导体制造设备的受害者以及安装了受体感染者的半导体制造设备
公开(公告)号：US20050022744A1
公开(公告)日：2005-02-03
申请号：US10710727
申请日：2004-07-30
申请人： Masuhiro Natsuhara , Hirohiko Nakata
发明人： Masuhiro Natsuhara , Hirohiko Nakata
IPC分类号： C23C16/458 , H01L21/02 , H01L21/205 , H01L21/265 , H01L21/3065 , H01L21/683 , C23C16/00
CPC分类号： C23C16/4586 , C23C16/4581
摘要： Enhances the durability of electrodes for supplying electricity to electroconductive components formed in the interior and/or on the surface of a susceptor ceramic heater-block, affords for semi-conductor manufacturing equipment a susceptor in which incidents of inter-electrode shorting are prevented, and makes available semiconductor manufacturing equipment in which the susceptor is installed. Rendering as unitary articles the electrodes for supplying electricity to electroconductive components formed in the interior and/or on the surface of a ceramic heater-block contributes to improved electrode endurance. Further, setting up a tubular piece encompassing each electrode contributes to preventing incidents of shorting. Introducing inert gas into the interior of the tubular pieces further improves the reliability of the electrodes. Semiconductor manufacturing equipment of excellent productivity and throughput can be made available by installing a susceptor of this kind into the semiconductor manufacturing equipment.
摘要翻译：提高用于向形成在基座陶瓷加热器块的内部和/或表面上的导电部件供电的电极的耐久性，为半导体制造设备提供防止电极间短路事件的感受体，以及提供安装感受器的半导体制造设备。作为整体制品，用于向形成在陶瓷加热器块的内部和/或表面的导电部件供电的电极有助于提高电极耐久性。此外，设置包围每个电极的管状件有助于防止短路的事件。将惰性气体引入管状件的内部进一步提高了电极的可靠性。通过将这种基座安装在半导体制造装置中，可以获得优异的生产率和产量的半导体制造设备。

38. 发明授权

US06569524B2 High thermal conductivity composite material, and method for producing the same 失效
公开(公告)号：US06569524B2
公开(公告)日：2003-05-27
申请号：US09886617
申请日：2001-06-22
申请人： Chihiro Kawai , Hirohiko Nakata
发明人： Chihiro Kawai , Hirohiko Nakata
IPC分类号： D02G300
CPC分类号： H01L23/3733 , B22F2998/00 , C22C32/00 , H01L24/48 , H01L2224/05599 , H01L2224/45099 , H01L2224/48091 , H01L2224/48247 , H01L2224/85399 , H01L2924/00014 , H01L2924/01019 , H01L2924/0102 , H01L2924/01079 , H01L2924/12042 , H01L2924/181 , Y10T428/2933 , Y10T428/2982 , C22C32/0052 , C22C32/0084 , H01L2924/00 , H01L2924/00012 , H01L2224/45015 , H01L2924/207
摘要： The present invention provides a composite material having comparatively high thermal conductivity and a small coefficient of thermal expansion, which is low cost and preferable as a heatsink material. A graphite powder and an alloy powder, whose main constituent is Ag and Cu, and including Ti, etc., which is selected from the elements belonging to 4A, 5A and 6A groups, are blended together, and are heated at a higher temperature than the melting point of the alloy in a vacuum state or in a gas atmosphere of He, Ar or hydrogen. A coating layer of metal carbide such as TiC is formed on the surface of the graphite grains, and at the same time, they are transformed into a sintered body. The composite material thus obtained is such that the relative density thereof is 70% or more, thermal conductivity thereof is 220 W/m·K or more at room temperature, and the mean coefficient of thermal expansion from the room temperature to 200° C. is 5 through 15×10−6/°C. Therefore, the composite material is best suitable as heatsink members for semiconductors. In addition, carbide powder such as carbon fibers or SiC may be used instead of graphite powder.

39. 发明授权

US06458444B1 Ceramic substrate and polishing method thereof 有权
标题翻译：陶瓷基板及其研磨方法
公开(公告)号：US06458444B1
公开(公告)日：2002-10-01
申请号：US09275478
申请日：1999-03-24
申请人： Masuhiro Natsuhara , Hirohiko Nakata , Motoyuki Tanaka , Yasuhisa Yushio
发明人： Masuhiro Natsuhara , Hirohiko Nakata , Motoyuki Tanaka , Yasuhisa Yushio
IPC分类号： G03G1520
CPC分类号： B24B29/00 , B24B7/22 , G03G15/2053 , Y10T428/24355 , Y10T428/24413 , Y10T428/2495 , Y10T428/24967 , Y10T428/26 , Y10T428/266 , Y10T428/268
摘要： The circumferential edge portion of a ductile rotating body containing abrasive grains is used to polish the surface of a ceramic substrate. The angle &thgr; formed between the polished direction D0 of the ceramic substrate and the rotating direction D1 of the rotating body is set in the range from 10° to 80° for the polishing step. Alternatively, the polishing process is divided into at least two steps, and the average grain size of abrasive grains is reduced stepwise in the successive steps of the polishing process. According to this method, the surface of a large-area and thin ceramic substrate can be polished without damage, and a smooth polished ceramic surface can be provided. This method is particularly suitable for polishing a ceramic substrate having a thickness of at most 2.0 mm, and the resulting polished ceramic substrate is suitable for a ceramic heater in a thermal fixation device for fixing a toner image.
摘要翻译：含有磨粒的韧性旋转体的圆周边缘部分用于抛光陶瓷基体的表面。在陶瓷基板的研磨方向D0与旋转体的旋转方向D1之间形成的角度θ被设定在10°〜80°的范围内。或者，抛光工艺被分为至少两个步骤，并且在抛光过程的连续步骤中磨粒的平均晶粒尺寸逐步降低。根据该方法，可以在不损坏的情况下抛光大面积且薄的陶瓷基板的表面，并且可以提供光滑的抛光陶瓷表面。该方法特别适合于研磨厚度至多为2.0mm的陶瓷基板，所得到的抛光陶瓷基板适用于用于定影调色剂图像的热固定装置中的陶瓷加热器。

40. 发明授权

US06428741B2 Aluminum nitride sintered body and method of preparing the same 有权
标题翻译：氮化铝烧结体及其制备方法
公开(公告)号：US06428741B2
公开(公告)日：2002-08-06
申请号：US09783259
申请日：2001-02-13
申请人： Yasuhisa Yushio , Hirohiko Nakata , Kazutaka Sasaki , Masuhiro Natsuhara , Motoyuki Tanaka , Yasuhiro Murase
发明人： Yasuhisa Yushio , Hirohiko Nakata , Kazutaka Sasaki , Masuhiro Natsuhara , Motoyuki Tanaka , Yasuhiro Murase
IPC分类号： C04B35581
CPC分类号： C04B35/581 , H01L23/15 , H01L2924/0002 , H01L2924/00
摘要： Provided is an aluminum nitride sintered body excellent in thermal shock resistance and strength and applicable to a radiating substrate for a power module or a jig for semiconductor equipment employed under a strict heat cycle. An aluminum nitride sintered body obtained with a sintering aid of a rare earth element and an alkaline earth metal element contains 0.01 to 5 percent by weight of an alkaline earth metal element compound in terms of an oxide and 0.01 to 10 percent by weight of a rare earth element compound in terms of an oxide, and the amount of carbon remaining in the sintered body is controlled to 0.005 to 0.1 percent by weight, thereby suppressing grain growth and improving thermal shock resistance and strength of the sintered body.
摘要翻译：提供耐热冲击性和强度优异的氮化铝烧结体，适用于在严格的热循环下使用的功率模块用的放射性基板或半导体装置的夹具。用稀土元素和碱土金属元素的烧结助剂获得的氮化铝烧结体含有0.01〜5重量％的碱土类金属元素化合物，以氧化物计，0.01〜10重量％的稀有金属元素以氧化物换算的土元素化合物，将烧结体中剩余的碳量控制在0.005〜0.1重量％，抑制晶粒生长，提高耐烧结体的耐热冲击性和强度。

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