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31. 发明专利

JPS6379354A RESIN-SEALED SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS6379354A
公开(公告)日：1988-04-09
申请号：JP22356986
申请日：1986-09-24
申请人： HITACHI VLSI ENG , HITACHI LTD
发明人： OZAKI HIROSHI , OKINAGA TAKAYUKI , YAMAZAKI YASUYUKI , FURUKAWA MICHIAKI , OTSUKA KANJI
IPC分类号： H01L23/29 , H01L23/31 , H01L23/34
摘要： PURPOSE:To obtain a resin-sealed semiconductor device characterized by an excellent discharging characteristic, by mixing powder of a heat conducting specified inorganic material in a molding resin, forming a resin seal part, and radiating heat through the powder. CONSTITUTION:In order to protect the bonding part of a semiconductor element 3 and a piece of connecting wire 5 from an outer environment, a resin is molded, and a resin seal part 6 is formed. As the resin for the seal part 6, an epoxy resin, in which e.g., a phenol resin is used as a hardening agent, is used. At this time, powder of one or more kinds of heat conducting inorganic materials, which are selected among a group comprising SiC powder, diamond powder or cubic boron nitride, is mixed in the seal part 6. Then, heat is radiated through the powder, and a resin-sealed semiconductor device characterized by an excellent discharging characteristic is obtained.

32. 发明专利

JPS6354731A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS6354731A
公开(公告)日：1988-03-09
申请号：JP19717586
申请日：1986-08-25
申请人： HITACHI VLSI ENG , HITACHI LTD
发明人： MATSUGAMI SHOJI , OTSUKA KANJI , OKINAGA TAKAYUKI , SHIRAI MASAYUKI , TATE HIROSHI
IPC分类号： H01L21/52
摘要： PURPOSE:To enable treatment at a low temperature, and to reduce damage to glazing by attaching a pellet by a resin material such as a polyimide synthetic resin in the die bonding of a semiconductor element to the glazed substrate to which a thin-film conductor is formed. CONSTITUTION:Glazing 2 is executed onto the whole surface of a base 1. A wiring layer 3 shaped onto the glazing 2 is constituted of a metal such as Al, and can be formed through a method such as a known evaporation technique. A semiconductor element 5 is fixed onto said thin-film conductor 3 by a resin joining member 4. Both thermoseting and thermoplastic resins can also be used as a resin material. A polyimide synthetic resin is cited as the concrete example of the resin material. The resin material may also be employed singly, but it may also contain an inorganic material such as silver. Said heating temperature depends upon the resin material, but approximately 100-150 deg.C can be used.

33. 发明专利

JPS62249462A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS62249462A
公开(公告)日：1987-10-30
申请号：JP9220086
申请日：1986-04-23
申请人： HITACHI VLSI ENG , HITACHI LTD
发明人： OKINAGA TAKAYUKI , TATE HIROSHI , YAMAZAKI YASUYUKI , FURUKAWA MICHIAKI , OTSUKA KANJI , SAWARA KUNIZO
IPC分类号： H01L23/04 , H01L23/02 , H01L23/29 , H01L23/31 , H01L23/34 , H01L23/42
摘要： PURPOSE:To improve heat dissipation from a semiconductor pellet by a method wherein the semiconductor pellet which is mounted on a pellet mounting substrate made of resin with low thermal conductivity is covered with elastic material containing diamond powder or borazon powder. CONSTITUTION:A space defined by a substrate 1 and dams 7 is filled with silicone gel (elastic material) 9 which covers a pellet 3. The protruded part 10a of a cap 10 which is made of aluminum and bonded to the top surfaces of the dams 7 with adhesive 8a is contacted with the silicone gel 9. Diamond powder 11 is contained in the elastic material 9 as filler. As movement of phonons induced by lattice vibration can be realized easily in diamond owing to the regulality of crystal lattice, equality of masses of atoms forming the lattice and so forth, the diamond powder provides excellent thermal conductivity. With this constitution, the heat generated in the pellet can be transmitted quickly through the elastic material to the member contacted with the elastic material so that heat dissipation of the semiconductor device can be improved.

34. 发明专利

JPS62249458A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS62249458A
公开(公告)日：1987-10-30
申请号：JP9217586
申请日：1986-04-23
申请人： HITACHI VLSI ENG , HITACHI LTD
发明人： EMATA KOJI , TATE HIROSHI , OKINAGA TAKAYUKI , SHIRAI MASAYUKI , OTSUKA KANJI
IPC分类号： H01L23/02 , H01L23/04 , H01L23/10 , H01L23/24
摘要： PURPOSE:To eliminate necessity of attaching a separate spacer and improve moisture resistant properties by a method wherein a cap is unified with a dam and two supports which support the cap are stood on the back surface of the cap and the space between the supports is filled with sealing material and, further, the end of the cap is protruded from the bottom surface of a base. CONSTITUTION:A cap 5 is put on supports 8 and 9. The cap 5 is composed of a ceiling 11, an extension 12 perpendicular to the ceiling 11 and a spacer 13 extended further from the extension 12. The inside of the support 8 is sealed with silicone system gel 6 and further the space between the two supports 8 and 9 is filled with silicone system gel 6. The spacer 13 is protruded from the back surface of a base 1 with a proper length. Thus, by providing the spacer 13 on the cap 5 itself, a separate process in which a spacer is attached to an external connecting pin 2 can be eliminated. Further, by filling the space between the support 8 and the support 9 with the gel 6, even if harmful substance such as moisture penetrates between the cap 5 and the base 1, the moisture resistant properties can be maintained and, by such double-sealing, the moisture resistant properties can be further improved.

35. 发明专利

JPS6298630A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS6298630A
公开(公告)日：1987-05-08
申请号：JP23741485
申请日：1985-10-25
申请人： HITACHI VLSI ENG , HITACHI LTD
发明人： OKINAGA TAKAYUKI , TATE HIROSHI , SAITO TETSUYA , SHIRAI MASAYUKI , OTSUKA KANJI
IPC分类号： H01L21/60
摘要： PURPOSE:To enable a semiconductor device to be efficiently manufacture a using accepted semiconductor pellet only by a method wherein the semiconductor pellet is junctioned with an insulating film formed of an interconnection layer to form a unit part by electric connection through the intermediary of the interconnection layer and wires. CONSTITUTION:A semiconductor pellet 2 is loaded on a print substrate 1 through the intermediary of an insulating film 3. Therefore, in the case of manufacturing a COB, an unit of semiconductor pellet 2 previously junctioned with the insulating film 3 to be electrically connected to an interconnection layer 4 by wires 5 cab be prepared. Thus, satisfactory characteristics tests of all semiconductor pellets can be performed before the pellets are loaded on the substrate 1 to eliminate any defective ones in advance. Furthermore, when any defect in a part of semiconductor pellet 2 is found, the defective pellet 2 can be easily replaced with accepted one to be repaired by peeling off the insulating film 3.

36. 发明专利

JPS6224650A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS6224650A
公开(公告)日：1987-02-02
申请号：JP16195285
申请日：1985-07-24
申请人： HITACHI VLSI ENG , HITACHI LTD
发明人： OZAKI HIROSHI , OKINAGA TAKAYUKI , FURUKAWA MICHIAKI , OTSUKA KANJI
IPC分类号： H01L23/29 , H01L21/312 , H01L21/316 , H01L23/31
摘要： PURPOSE:To obtain a semiconductor device which has excellent moisture resistance and is hardly influenced by an electron beam by a method wherein moisture-proof resin is applied to the bonding pads formed on the surface of a pellet and electron beam protection material is applied to the surface of the pellet except the bonding pads. CONSTITUTION:A pellet 3 composed of silicon semiconductor is attached to a tab 2 of a lead frame by Au-silicon eutectic method and a film sheet 8 made of polyimide resin is applied to the surface of the pellet 3 with silicon-based adhesive 10. Then bonding pads 7, exposed in the bottoms of the holes 8a in the film sheet 8, are connected to inner leads 5a by bonding wires 4. After that, the holes 8a formed in the film sheet 8 are filled with silicone gel 9 to cover the junction parts of the bonding pads 7 and the bonding wires 4. Then the lead frame is molded by molding material 6 such as epoxy resin which covers the pellet 3 and the wires 4 and outer lead parts 5b, protruding from the package main body are cut and shaped.

37. 发明专利

JPS61269339A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS61269339A
公开(公告)日：1986-11-28
申请号：JP11045685
申请日：1985-05-24
申请人： HITACHI VLSI ENG , HITACHI LTD
发明人： OZAKI HIROSHI , TATE HIROSHI , OKINAGA TAKAYUKI , FURUKAWA MICHIAKI , OTSUKA KANJI
IPC分类号： H01L23/50 , H01L23/28
摘要： PURPOSE:To obtain flatness in the surface of a package, on which a mark is printed, by forming a pre-molding type semiconductor structure in which an outer lead projected and shaped from a package proper is bent in the direction of the potting surface of a resin. CONSTITUTION:A semiconductor device 1 has a dual-in-line package shape. The semiconductor device 1 has structure in which a pellet 4 fitted onto a tab 2 by a bonding material 3 such as silver paste is connected electrically by leads 5 set up around the pellet 4 and wires 6, the sections of the pellet 4 and the wires 6 are sealed with silicon gel 7 as a damp-proof resin, and the periphery of the silicon gel is molded by a molding material 8 such as epoxy resin. Accordingly, the surface of a package functions as the surface of the molding resin, thus acquiring flatness in the surface of the package, then improving the printing of a mark.

38. 发明专利

JPH08288437A HEAT RADIATING FIN, SEMICONDUCTOR DEVICE USING IT, AND SEMICONDUCTOR DEVICE MOUNTING STRUCTURE 失效
公开(公告)号：JPH08288437A
公开(公告)日：1996-11-01
申请号：JP11516595
申请日：1995-04-17
申请人： HITACHI LTD , HITACHI VLSI ENG
发明人： KOMATA MAKOTO , EMATA KOJI , OKINAGA TAKAYUKI , TATE HIROSHI , HORIUCHI HITOSHI , SASAKI MASAKO , HONDA ATSUSHI
IPC分类号： H01L23/40
摘要： PURPOSE: To surely prevent a heat radiating fin from coming off a semiconductor device by mechanically fixing the fin to the device with a plurality of retaining claws protruded from the outer periphery of the fin. CONSTITUTION: The main body 11 of a heat radiating fin 10 is brought into contact with the upper surface of a resin body 3 sealing a QFP and IC1 with the fin section 12 of the fin 10 upward. When the main body 11 is brought into contact with the upper surface of the body 3, the tour retaining claws 16 of the fin 10 are pressed down while the claws 16 are respectively aligned with the four corners of the body 3. Therefore, the claws 16 are respectively locked to the edge of the body 3 at the four corners on the rear surface side. Since the fin 10 is mechanically fixed to the QFP and IC1 with the tour claws 16 in such a way, the fin 10 is surely fixed to the QFP and IC1 without receiving any influence from the mold release agent of the body 3. Therefore, the QFP and IC1 can surely maintain their heat radiating abilities.

39. 发明专利

JPH07161902A SEMICONDUCTOR DEVICE AND LEAD FRAME USED FOR ITS MANUFACTURE 失效
公开(公告)号：JPH07161902A
公开(公告)日：1995-06-23
申请号：JP30255193
申请日：1993-12-02
申请人： HITACHI LTD , HITACHI VLSI ENG
发明人： MIURA KAORU , OKINAGA TAKAYUKI , EMATA KOJI , HORIUCHI HITOSHI , KOMATA MAKOTO , HONDA ATSUSHI , SUZUKI HIROMICHI
IPC分类号： H01L23/50
摘要： PURPOSE:To increase the number of pins and narrow a lead pitch in a semiconductor device. CONSTITUTION:A semiconductor device 1 comprises a package 2 made of a resin, a lead 3 extending over inside and outside the package 2, a semiconductor chip located inside the package 2. An inner lead 6 extending over inside the package is alternately sectioned up and down with one sheet of insulating film 12, and also the inner end of respective inner leads and the electrode of a semiconductor chip 9 are interconnected with a conductive wire 13. The tip of the inner lead 6 is alternately made long and short. The tip of short lead 11 extends on the insulating film 12, and the tip of a long lead 10 projects beyond the lower surface side of the insulating film 12, and the wire 13 is connected with the projection part. As a result, a wire-bonding position becomes zigzag-like arrangement, and since there is a a difference in level, it can be achieved that the inner lead 6 is made narrow. that is, an outer lead 7 is made narrow (the increase of the number of pins).

40. 发明专利

JPH04133457A CONDUCTIVE PLATE AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH04133457A
公开(公告)日：1992-05-07
申请号：JP25609190
申请日：1990-09-26
申请人： DAINIPPON PRINTING CO LTD , HITACHI LTD , HITACHI VLSI ENG
发明人： KATO TSUNENORI , YAMAGUCHI YUJI , SUZUKI HIROMICHI , OKINAGA TAKAYUKI , EMATA KOJI , HORIUCHI HITOSHI
IPC分类号： H01L23/50
摘要： PURPOSE:To prevent the fall of conductive plates from being generated at the time of alignment as well as to obtain the conductive plates, which can be jointed to inner leads without inclining, by a method wherein each conductive plate is constituted of a plane part and a prescribed number of terminal parts, which are made to project from the plane part and are connected to the inner leads, and the thickness of the plane part is formed thinner than those of the terminal parts. CONSTITUTION:In each conductive plate 2 which is laminated on a lead frame 1, the conductive plate 2 consists of a plane part 2a and a prescribed number of terminal parts 2b, which are made to project from the plane part 2a and at least one of which is jointed to each inner lead 1a of the lead frame 1, and the thickness of the plane part 2a is formed thinner than those of the terminal parts 2b. For example, each power plate 2 is formed of a Cu or Fe-Ni alloy film of a plate thickness of 0.05 to 1.00mm and is constituted of a plane part 2a, which is provided in such a way as to lie across on a tape 4 for taping use, and two pieces of terminal parts 2b and 2b which are made to project from the plane part 2a. The plane part 2a is formed thin by performing a half etching work on metal plates of a stock thickness in the jointing terminal parts 2b from the sides of the lower surfaces of the metal plates.

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