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31. 发明专利

JPS61263219A FORMING METHOD OF RESIST PATTERN 失效
公开(公告)号：JPS61263219A
公开(公告)日：1986-11-21
申请号：JP10379885
申请日：1985-05-17
申请人： HITACHI LTD , HITACHI MICROCUMPUTER ENG
发明人： NOZAKI KATSUHIRO , KADOTA KAZUYA , SATO FUMIYOSHI , SUGIMOTO ARITOSHI , OZAKI KATSUMI
IPC分类号： G03F7/26 , H01L21/027 , H01L21/30
摘要： PURPOSE:To form an accurate resist pattern by forming a resist layer which gradually decreases in containing light absorber density in a surface direction from the coating surface, exposing and developing the layer. CONSTITUTION:A resist layer 3 is coated on the upper surface of the aluminum layer 2 on a silicon wafer 1. A light absorber 4 s contained in the layer 3, and higher the density is, the nearer the layer 2 is disposed to the surface of the layer 2, and lower the density is, the layer 2 is nearer to the surface of the layer 3. When the layer 3 is exposed, the reflected light on the surface of the exposed light arrived at the surface of the layer 2 is absorbed and removed by a light absorber 4 of high density. Thus, an accurate resist pattern can be formed.

32. 发明专利

JPS61125034A Inspecting method and inspecting device 失效
标题翻译：检查方法和检查设备
公开(公告)号：JPS61125034A
公开(公告)日：1986-06-12
申请号：JP24601084
申请日：1984-11-22
申请人： Hitachi Ltd
发明人： KADOTA KAZUYA , NAGAO MAKI , SUGIMOTO ARITOSHI
IPC分类号： G01B15/00 , H01L21/66
CPC分类号： H01L22/00
摘要： PURPOSE:To prevent charge-up and to make a pattern-inspection of high resolving power and of high accuracy by eliminating a conductive thin film after making a pattern detection and inspection with a high acceleration scanning type electron microscope in a condition in which a conductive thin film to easily form and eliminate exists on a pattern surface of a body to be inspected. CONSTITUTION:After a wafer 20 is coated all over with a conductive thin film 22 in a conductive thin film forming portion 6, it is set on a high acceleration scanning type microscope SEM2. After, in the SEM2, an electron beam EB from a body 3 is projected to a surface of the wafer 20, while on the other hand its reflected electron and the secondary electron are detected to a sensor 4, a pattern of a photoresist film 21 is detected, and this is compared with a standard pattern, its quality is estimated. As the conductive thin film 22 is formed on a surface of the wafer 20 in this time, electrons projected to the wafer 20 are moved in all directions (diffused) through the conductive thin film 22, there is no charge in this part and a charge-up is prevented. Therefore, a discoloration and a distortion of a pattern image are prevented and an inspection of high resolving power and of high accuracy is done.
摘要翻译：目的：为了防止充电，通过在使用高加速度扫描型电子显微镜进行图案检测和检查之后，在导电性的条件下，通过消除导电薄膜来进行高分辨率和高精度的图案检查易于形成和消除的薄膜存在于要检查的身体的图案表面上。构成：在导电薄膜形成部分6中用导电薄膜22整个涂覆晶片20之后，将其设置在高加速度扫描型显微镜SEM2上。之后，在SEM2中，将来自主体3的电子束EB投影到晶片20的表面，而另一方面，其反射的电子和二次电子被检测到传感器4，光刻胶膜21的图案被检测到，并将其与标准模式进行比较，估算其质量。由于此时在晶片20的表面上形成导电薄膜22，所以投射到晶片20的电子通过导电性薄膜22向所有方向（扩散）移动，该部分没有电荷，电荷 -up被阻止。因此，防止了图案图像的变色和失真，并且进行高分辨率的检查和高精度的检查。

33. 发明专利

JPS6180820A Projection exposure equipment 失效
标题翻译：投影曝光设备
公开(公告)号：JPS6180820A
公开(公告)日：1986-04-24
申请号：JP20174684
申请日：1984-09-28
申请人： Hitachi Ltd
发明人： KADOTA KAZUYA , NAGAO MAKI , TSUNEMATSU MASAYASU
IPC分类号： G03F7/20 , H01L21/027 , H01L21/30
CPC分类号： H01L21/30
摘要： PURPOSE:To contrive reducing the reflected light from a pattern or on a wafer by forming a low reflection film at the position which includes the pattern of a reticule and by carrying out low reflection treatment against the photo resist of a semiconductor wafer. CONSTITUTION:A reticule 12 is based upon a transparent quartz glass substrate 10 on the surface of which the pattern 11 of a metal film such as chromium is formed in a required shape. In this case, a low reflection film 13 is formed on the surface of the pattern 11. On the other hand, a patterned or etched film is formed on the surface of a semiconductor wafer 40 and a photo resist film 41 is formed on the patterned or etched film. If the above-mentioned reticule or wafer is each set in a projection exposure equipment 9 and the pattern of a reticule 3A is copied on a wafer 5A, the reflected light on the surface or on the back of the reticule 3A or the wafer 5A is reduced.
摘要翻译：目的：通过在包括网状图案的位置处形成低反射膜，并通过对半导体晶片的光致抗蚀剂进行低反射处理，来减少来自图案或晶片的反射光。构成：网状物12基于透明石英玻璃基板10，其表面上形成金属膜如铬的图案11为所需形状。在这种情况下，在图案11的表面上形成低反射膜13.另一方面，在半导体晶片40的表面上形成图案化或蚀刻的膜，并且在图案或蚀刻膜。如果将上述的网状物或晶片分别设置在投影曝光设备9中，并且将网状物3A的图案复制在晶片5A上，则在网状物3A或晶片5A的表面或背面上的反射光为减少

34. 发明专利

JPS60247937A SEMICONDUCTOR MANUFACTURING PROCESS CONTROLLING SYSTEM 失效
公开(公告)号：JPS60247937A
公开(公告)日：1985-12-07
申请号：JP10255684
申请日：1984-05-23
申请人： HITACHI LTD
发明人： TAKEUCHI MASARU , KADOTA KAZUYA , TANUMA MASAYA , OONARI MIKIHIKO
IPC分类号： H01L21/50
摘要： PURPOSE:To contrive accomplishment of a highly precise control over the semiconductor manufacturing process as well as to expedite said control by a method wherein a measuring process is provided between each treatment process, and the condition of each treatment process is established based on the measured data of the adjoining measuring process. CONSTITUTION:A measuring process is provided between each process constituting the manufacturing process of a semiconductor device. Each process 1 is controlled by a controlling part 3 based on the data obtained by the measuring process 2 located adjoining to the process 1. To be more precise, a controlling signal Si+1 is formed by the controlling part 3 based on the measured data Ti sent from the measuring process 2 and the desined data M given from outside, and the controlling signal is inputted to the treatment process 1. A treatment is performed based on said controlling signal by the treatment process 1. As a result, the control of a treatment process is automated, the control is performed in a highly precise manner, the speed of control is improved, and also the stability of control can be improved.

35. 发明专利

JPS60200301A CONTROL SYSTEM FOR SEMICONDUCTOR PRODUCTION PROCESS 失效
公开(公告)号：JPS60200301A
公开(公告)日：1985-10-09
申请号：JP5603084
申请日：1984-03-26
申请人： HITACHI LTD
发明人： TAKEUCHI MASARU , KADOTA KAZUYA , TANUMA MASAYA , OONARI MIKIHIKO
IPC分类号： G05B11/32 , G05B13/02 , H01L21/50
摘要： PURPOSE:To attain the high control accuracy and to improve the production yield of semiconductors by controlling the processing conditions of each processing part through an adaptation control part, an FF control part and a set value control part based on the measurement value signal and the design value sent from a measurement part. CONSTITUTION:For adaptation control, a processing part 1 is controlled by a control part 3 based on the data obtained from a measurement part 2 set in a succeeding process. The target value M set from outside and the signal sent from the part 2 are supplied to the part 3. For FF control, a processing part 4 is controlled by a control part 6 based on the data obtained from a measurement part 5 set in the preceding process. The part 6 receives the target value M from outside and the signal from part 5 and delivers a signal to the part 4. For set value control, a processing part 7 is controlled by a control part 8. The part 8 calculates the target value Ms of processing corresponding to the design value or the corrected design value D and controls the part 7 with the target value signal Ms.

36. 发明专利

JPS60136310A RESIST 失效
公开(公告)号：JPS60136310A
公开(公告)日：1985-07-19
申请号：JP24389483
申请日：1983-12-26
申请人： HITACHI LTD
发明人： SUGIMOTO ARITOSHI , KADOTA KAZUYA , SATOU FUMIYOSHI , UENO TAKUMI , SHIRAISHI HIROSHI
IPC分类号： G03C1/00 , G03F7/004 , G03F7/038 , G03F7/039 , H01L21/027 , H01L21/265 , H01L21/266
摘要： PURPOSE:To enhance the blocking ability against charged particle penetration of the whole resist to enable to make good-selective doping of impurities with only the resist, by including any one of metal, metallic compound, organometallic compound, iodine and iodic compound in dispersion state in the resist. CONSTITUTION:Any one of metal, metallic compound, organometallic compound, iodine and iodic compound is included in dispersion state in the resist. For example, a field insulating film 5 is formed on a silicon substrate 1 to form an active region and gate electrodes 7, 7 are formed on the gate insulating film 6 of the active region. Next, the side 2 of a P-MOSFET is covered by a patterned photo resist 8. When As ions are implanted, ion implantation layers 9, 9 which function as source and drain layers are formed on the side 3 of an N-MOSFET by the self alignment of the gate electrode 7. On the contrary, on the side 2 of the P-MOSFET, As ions can not penetrate through the photo resist film 8 and can not arrive at the silicon substrate 1 because of the blocking ability against charged particle penetration by the substance being included in the photo resist 8.

37. 发明专利

JPS6053028A FORMATION OF FINE PATTERN 失效
公开(公告)号：JPS6053028A
公开(公告)日：1985-03-26
申请号：JP16035283
申请日：1983-09-02
申请人： HITACHI LTD
发明人： MATSUZAWA TOSHIHARU , YANAGISAWA HIROSHI , SHIRAISHI HIROSHI , KADOTA KAZUYA
IPC分类号： H01L21/3205 , H01L21/28 , H01L21/302 , H01L21/3065
摘要： PURPOSE:To enable to lift off a wiring of 1mum or less of line width by a method wherein an undercut-shape pattern is formed to a resist according to plasma etching. CONSTITUTION:A positive type photo resist 2 and a resist layer 3 containing triiodophenol are formed on an Si wafer 1 [the figure (a)]. A pattern of 0.8mum line width and 1.2mum line interval is transferred to the sample thereof formed with the two layer thin film according to the reducing projection exposure method following to the usual method, and only the layer 3 containing triiodophenol is developed [the figure (b)]. After that, when isotropic etching according to oxygen plasma is performed for 20min using a cylindrical plasma processor, the second layer pattern becomes to show resistance against oxygen plasma in proportion to progress of oxidation of triiodophenol, as a result thereof, a side etched shape can be formed to the lower layer resist layer [the figure (c)]. Al 4 is evaporated to the sample acted with the process mentioned above [the figure (d)], and by removing the resist parts 2, 3 according to a resist remover following to the usual method at the lift-off process, an Al wiring 4 of 0.8mum interval and 1.2mum line width can be formed [the figure (e)].

38. 发明专利

JPS59161026A Etching 失效
标题翻译：蚀刻
公开(公告)号：JPS59161026A
公开(公告)日：1984-09-11
申请号：JP3454883
申请日：1983-03-04
申请人： Hitachi Ltd
发明人： HIROBE YOSHIMICHI , KADOTA KAZUYA , NAGAO MAKI , NAKAZAWA TOMIO , SATOU FUMIYOSHI
IPC分类号： H01L21/302 , G03F7/20 , H01L21/027 , H01L21/30 , H01L21/3065
CPC分类号： H01L21/30
摘要： PURPOSE:To contrive to enlarge the substantial size of inclination parts according to isotropic etching, and to enhance reliability and manufacturing yield of a product by a method wherein the edge faces of a mask is formed in the eaves shape, and continuous processes are performed according to isotropic etching and anisotropic etching. CONSTITUTION:A silicon oxide film 11 and a photo resist film 12 are formed on a semiconcuctor substrate 10, and a photolithography process is performed using a photo mask 13. A negative type photo resist having favorable light absorbency is used for the photo resist 12, and the photo resist film 12A is formed to have the eaves shape protruding the edge faces upwards. The silicon oxide film 11 is isotropically etched to be etched nearly in a circle centering about the edge parts A' of the resist film 12A, etching is changed over anisotropic etching, and etching is performed making the upper side edge parts H of the resist film 12A as the reference. The inclination parts 11a of the silicon oxide film 11 can be formed in a large and gentle face type, disconnection at the level difference is not generated even when an aluminum film for wiring is adhered, and reliability of the product can be enhanced.
摘要翻译：目的：为了根据各向同性蚀刻来扩大倾斜部分的大小，并且通过掩模的边缘面形成为檐形状的方法提高产品的可靠性和制造成品率，并且按照各向同性蚀刻和各向异性蚀刻。构成：在半导体基板10上形成氧化硅膜11和光致抗蚀剂膜12，使用光掩模13进行光刻工序。对光致抗蚀剂12使用具有良好的光吸收性的负型光致抗蚀剂，并且形成光致抗蚀剂膜12A以使边缘面向上突出的檐形状。将各氧化硅膜11进行各向同性蚀刻，以围绕抗蚀剂膜12A的边缘部分A'为中心的圆弧蚀刻，蚀刻通过各向异性蚀刻进行蚀刻，并进行蚀刻，使抗蚀剂膜的上侧边缘部分H 12A作为参考。氧化硅膜11的倾斜部分11a可以形成为大而温和的表面型，即使在用于布线的铝膜被粘附时也不会产生电平差的断开，并且可以提高产品的可靠性。

39. 发明专利

JPS5966116A Method and apparatus for exposure 失效
标题翻译：曝光方法和装置
公开(公告)号：JPS5966116A
公开(公告)日：1984-04-14
申请号：JP17616582
申请日：1982-10-08
申请人： Hitachi Ltd
发明人： KADOTA KAZUYA , NAGAO MAKI
IPC分类号： H01L21/30 , G03F7/20 , G03F9/00 , H01L21/027
CPC分类号： G03F9/70 , G03F7/20
摘要： PURPOSE:To secure highly accurate position alignment, by removing only the resist which is applied to a target pattern part before the alignment work. CONSTITUTION:An exposure light beam 24 is transmitted through an optical fiber 16 and projected on a resist 9 on a target pattern 7 through a lens 17. The resist 9 at said part is exposed. Then a developing liquid is supplied to the resist 9 through an inner tube 15 from a developing liquid supply source 18. Thereafter, a rinsing liquid is supplied through the inner tube 15 from a rinsing liquid supply source 19, and the developed part surrounded by an outer tube 11 on a wafer 6 is washed. The resist 9 at the part corresponding to the target pattern 7 is removed. A local resist removing device 10 is lifted. Then an aligning light beam is projected on the exposed part of the target pattern 7. By detecting the reflected light from the pattern part, optical fine alignment is performed, and the positioning of the wafer 6 and a reticle 3 is performed.
摘要翻译：目的：为了确保高精度的位置对准，只需在对准作业之前，仅移除施加到目标图案部分的抗蚀剂。构成：曝光光束24通过光纤16透射并通过透镜17投影在目标图案7上的抗蚀剂9上。所述部分处的抗蚀剂9被暴露。然后，将显影液从显影液供给源18通过内管15向抗蚀剂9供给。此后，通过内管15从冲洗液供给源19供给冲洗液，并将显影液洗涤晶片6上的外管11。去除与目标图案7对应的部分处的抗蚀剂9。局部抗蚀剂去除装置10被提起。然后将对准的光束投射在目标图案7的露出部分上。通过检测来自图案部分的反射光，执行光学精细对准，并且执行晶片6和标线片3的定位。

40. 发明专利

JPS5645023A PROJECTION ALIGNER 失效
公开(公告)号：JPS5645023A
公开(公告)日：1981-04-24
申请号：JP12063779
申请日：1979-09-21
申请人： HITACHI LTD
发明人： NAKAZAWA TOMIO , KADOTA KAZUYA
IPC分类号： G03F7/20 , H01L21/027 , H01L21/30
摘要： PURPOSE:To improve a projection aligner in resolving power by making the geometry of the aperture of its projection lens noncircular. CONSTITUTION:The optical system of a projection aligner has an optical diaphragm called aperture, which is an aperture diaphragm to eliminate the effect of lens aberrations. The aperture is decreased so as to improve the resolving power of the lens and the apparatus. In this case, the geometry of the aperture is made noncircular. This permits the MTF value to be larger and the resolving power to be greater, and the exposing time to be shorter. As the noncircular aperture, various shapes such as polygons are applicable. Moreover, it is advisable that the aperture itself can automatically change its geometry.

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