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31. 发明专利

JPS62131584A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS62131584A
公开(公告)日：1987-06-13
申请号：JP27146585
申请日：1985-12-04
申请人： HITACHI LTD
发明人： MITANI KATSUHIKO , TAKAHASHI SUSUMU , OKAZAKI SHINJI , YANAGISAWA HIROSHI , ONO RYOICHI , URYU TAKESHI
IPC分类号： H01L21/28 , H01L21/338 , H01L29/80 , H01L29/812
摘要： PURPOSE:To form a minute electrode pattern simply by using a single resist layer, by coating a dielectric film on a substrate having stepped structure, and selectively performing anisotropic etching of a region including a step part. CONSTITUTION:In a GaAs crystal substrate 1, recess etching is performed. An SiO2 dielectric film 2 is applied on the substrate by a chemical vapor deposition method. Resist 3 is applied on the substrate. A hole is provided in the resist including a step part of the dielectric film 2. With the resist pattern as a mask, the dielectric thin film 2 undergoes reactive ion etching, and a metal electrode 4 is formed by a lift-off method. Thus a recess structure is provided, the length of a gate can be shortened and the distance between a source and a drain can be also shortened.

32. 发明专利

JPS6254966A SCHOTTKY GATE FIELD EFFECT TRANSISTOR AND MANUFACTURE THEREOF 失效
公开(公告)号：JPS6254966A
公开(公告)日：1987-03-10
申请号：JP19384185
申请日：1985-09-04
申请人： HITACHI LTD , HITACHI VLSI ENG
发明人： KAMIYANAGI KIICHI , MIYAZAKI MASARU , KOBAYASHI MASAYOSHI , KAYAMA SATOSHI , KODERA NOBUO , SHIGETA JUNJI , YANAGISAWA HIROSHI , HASHIMOTO TETSUKAZU , MASUKI JIYUNJI , ISOBE YOSHIHIKO
IPC分类号： H01L29/812 , H01L21/338 , H01L29/08
摘要： PURPOSE:To obtain a short gate MESFET having high performance by disposing the second source and drain regions having lower carrier density than the first source and drain regions between a gate electrode, and the first source region and the drain region respectively. CONSTITUTION:Source and drain regions are formed double and to be self- aligned with a gate electrode, the second source and drain regions 14, 14' of the gate electrode 3 side have relatively low carrier density and shallow depth, the first source and drain regions 4, 4' of the side separated from the gate electrode have high carrier density to form a high performance MESFET having small short channel effect, and low source resistance. The regions 14, 14' are formed by ion implanting at 15 with the electrode 3 as a mask, and the regions 4, 4' of higher carrier density than the regions 14, 14' are separated from the electrode 3 by ion implanting at 9 with the side wall 16 formed on the side of the electrode 3 as a mask. Thus, a high performance MESFET is obtained.

33. 发明专利

JPS6251270A MANUFACTURE OF FIELD EFFECT TRANSISTOR 失效
公开(公告)号：JPS6251270A
公开(公告)日：1987-03-05
申请号：JP18959185
申请日：1985-08-30
申请人： HITACHI LTD
发明人： MIYAZAKI MASARU , MATSUOKA NAOYUKI , YANAGISAWA HIROSHI
IPC分类号： H01L29/812 , H01L21/338 , H01L29/80
摘要： PURPOSE:To form a minute pattern of 1mum or less at a high yield rate, when the gate electrode of an FET using a compound semiconductor is formed, by using a high-melting-point metal layer as a spacer material. CONSTITUTION:In processes for forming the gate electrode of an FET using a compound semiconductor crystal, a high-melting-point metal layer is used as a spacer material. For example, an N layer 11 and an N layer 12 are selectively formed in a GaAs substrate 1. WSix is deposited, and a spacer metal layer 401 is formed. Resist 101 is applied, and a pattern of a source and a drain layer is machined. After the WSix is machined by an RIE method, ohmic metal of AuGe alloy is deposited. Liftoff is performed and alloy is formed. Then, electron beam resist 102 is applied, and a gate pattern is formed. The WSix is machined by the RIE. Then, a gate metal Al is evaporated and lifted off. Thus, an Al gate electrode 301, which is contacted with the side wall of the spacer metal layer 401, is formed. Thereafter, the WSix is removed by the RIE and an FET is completed.

34. 发明专利

JPS612614A AIR-FLOAT WAFER CARRY PATH 失效
公开(公告)号：JPS612614A
公开(公告)日：1986-01-08
申请号：JP12252785
申请日：1985-06-07
申请人： HITACHI LTD , HITACHI TOKYO ELECTONICS KK
发明人： YANAGISAWA HIROSHI , HASEGAWA NOBUO , SUZUKI MICHIO , ISHIOKA MASATO , NAGATOMO HIROTO
IPC分类号： B65G49/07 , B65G51/03 , H01L21/67 , H01L21/677
摘要： PURPOSE:To reduce the spatial occupation of carry path by making air-holes for carrying in both left and right directions in the wafer carry path. CONSTITUTION:Air-holes 21, 22 for blowing out the air are made in both left and right directions then air for left or right direction carrying is fed under time sharing contol to carry Si wafer bilaterally thus to reduce the spatial occupation.

35. 发明专利

JPS6097351A RESIST COATER 失效
公开(公告)号：JPS6097351A
公开(公告)日：1985-05-31
申请号：JP20481983
申请日：1983-11-02
申请人： HITACHI LTD
发明人： KANEKO TADAO , YANAGISAWA HIROSHI , KOBASHI TAKAHIRO
IPC分类号： G03C1/74 , G03F7/16
摘要： PURPOSE:To improve the wettability between a metallic surface and resist as well as the adhesion between the photoresist and a sample by subjecting a thin sheet-like article to an oxidation treatment and surface treatment then coating the photoresist thereon. CONSTITUTION:UV rays are irradiated from a low pressure mercury lamp 1 under an oxygen-contg. atmosphere to a thin sheet-like article conveyed from an object ejecting part 11 to an oxidation treating part 12, by which the article is oxidized. Such article is then placed on the sample base 2 in a surface treating part 13 where the lower part 3 and upper part 5 of a reaction chamber are brought into tight contact with each other to form a hermetic reaction chamber and thereafter the article is heated by a heating jig 4 and is rested in a bubbler 6 by opening solenoid valves 111-113. The vapor of an org. compd. (e.g.; hexamethyl disilazane) is introduced into the chamber to perform surface treatment, then the object is conveyed to a coating machine part 14 where a photoresist is coated thereon.

36. 发明专利

JPS59224548A APPARATUS FOR SURFACE ANALYSIS 失效
公开(公告)号：JPS59224548A
公开(公告)日：1984-12-17
申请号：JP9779083
申请日：1983-06-03
申请人： HITACHI LTD , HITACHI MICROCUMPUTER ENG
发明人： YANAGISAWA HIROSHI , SUZUKI YOSHISHIGE , SUZUKI MICHIO , HASHIMOTO TETSUKAZU , OOHAYASHI HIDEHITO
IPC分类号： H01J37/252 , G01N1/34 , G01N1/40 , G01N23/22
摘要： PURPOSE:To obtain the titled apparatus having a mechamism for removing effectively only a contamination of an organic material adhering to a sample surface by providing a mercury-arc lamp of low pressure at a position opposed to the sample in a vacuum vessel, and providing a mechanism capable of supplying an oxygen to the sample surface. CONSTITUTION:The mercury-arc lamp 12 of low pressure and a nozzle 13 for supplying oxygen are provided at the position opposed to an analyzing sample 11. The sample 11 is attached to a sample base 14 in accordance with usual operation, an inner part of an analyzing chamber is evacuated, then, the lamp 12 is lit to irradiate ultraviolet ray to the surface of the sample 11, and the oxygen is leaked from the nozzle 13 by only a very small quantity to supply the oxygen to the surface of the sample 11. By this operation, ozone is generated near the surface of the sample 11, thereby, the organic contamination material at the sample surface is removed. After treating said surface in such a way only for 3min, the oxygen is stopped and the lamp 12 is turned off, the vacuum evacuation is performed successively for 20min, then the sample 1 is analyzed continuously.

37. 发明专利

JPS5866206A METHOD OF TREATING SURFACE OF NESA FILM 失效
公开(公告)号：JPS5866206A
公开(公告)日：1983-04-20
申请号：JP16425181
申请日：1981-10-16
申请人： HITACHI LTD , HITACHI ELECTRONICS
发明人： YANAGISAWA HIROSHI , KUBOTA MINORU , SAITOU KAZUTOSHI
IPC分类号： C03C17/42 , C03C17/34 , H01B5/14 , H01B13/00 , H01J9/02

38. 发明专利

JPS5730829A Micropattern formation method 失效
标题翻译：微波炉形成方法
公开(公告)号：JPS5730829A
公开(公告)日：1982-02-19
申请号：JP10499080
申请日：1980-08-01
申请人： Hitachi Ltd
发明人： MATSUZAWA TOSHIHARU , DOUDA KIKUO , IWAYAGI TAKAO , YANAGISAWA HIROSHI
IPC分类号： C23F1/00 , G03F7/012 , G03F7/038 , G03F7/26 , H01L21/306
CPC分类号： G03F7/038 , G03F7/0125
摘要： PURPOSE: To obtain a high precision micropattern by once development through a lift-off method, by forming a photoresist having a benzene ring or that further containing a specified aromatic azide compound, irradiating it with short wavelength ultraviolet rays, and removing nonirradiated parts.
CONSTITUTION: A solution of polyvinylphenol, its bromide, polyvinyl hydroxybenzoate, or a condensation product of phenol, cresol, or the like and formaldehyde is coated on a substrate 1 of a silicon wafer or the like for use in an integrated circuit. Alternatively, it is coated with a solution obtained by dissolving a compound represented by the formula in which A is O, S, CH
2 , SO
2 , S
2 , or the like; X is H or N
3 ; and Z is N
3 when X is H, and Z is H or Cl, when X is N
3 in the above condensate solution. This photoresist 5 is patternwise irradiated with short wavelength ultraviolet rays, freed of the unexposed parts with an aqueous solution of N(CH
3 )
4 OH or the like containing no alkali metal to form a resist pattern having a section of reversely tapered form. Then, aluminum 4 is vapor deposited to form an aluminum pattern 4 on the substrate 1, the resist 5 and the aluminum layer 4 on this are removed by a lift-off method, and a micropattern 4 of high density to be obtained.
COPYRIGHT: (C)1982,JPO&Japio
摘要翻译：目的：通过一次剥离法得到高精度的微图案，通过形成具有苯环的光致抗蚀剂，或进一步含有特定的芳族叠氮化合物，用短波紫外线照射，除去非照射部。构成：将聚乙烯基苯酚，其溴化物，聚羟基苯甲酸酯或苯酚，甲酚等的缩合产物和甲醛的溶液涂布在硅晶片等的基板1上，用于集成电路。或者，将其溶解由A为O，S，CH2，SO2，S2等的由式表示的化合物所得到的溶液; X为H或N 3; 当X为H时Z为N3，Z为H或Cl时，X为上述缩合溶液中的N 3。使用不含碱金属的N（CH 3）4 OH等的水溶液除去未曝光部分的短波长紫外线图案照射光致抗蚀剂5，形成具有倒锥形部分的抗蚀剂图案。然后，在基板1上气相沉积铝4以形成铝图案4，通过剥离法去除抗蚀剂5和其上的铝层4，并获得高密度的微图案4。

39. 发明专利

JPS5394770A PHOTO MASK 失效
公开(公告)号：JPS5394770A
公开(公告)日：1978-08-19
申请号：JP865677
申请日：1977-01-31
申请人： HITACHI LTD
发明人： MATSUZAWA TOSHIHARU , YANAGISAWA HIROSHI , HASHIMOTO TETSUKAZU
IPC分类号： G03F1/00 , G03F1/48 , H01L21/027 , H01L21/302
摘要： PURPOSE:To make the separation from the photo resist film easy and to obtain the photo mask which can be used several times repeatedly, by adhering the SiO2 film which has surface free energy reduce through surface process onto the surface to be made in contact with the photo resist film of the photo mask.

40. 发明专利

JPS5359372A MASK ALIGNMENT 失效
公开(公告)号：JPS5359372A
公开(公告)日：1978-05-29
申请号：JP13405376
申请日：1976-11-10
申请人： HITACHI LTD
发明人： MATSUZAWA TOSHIHARU , SUNAMI HIDEO , YANAGISAWA HIROSHI , HASHIMOTO TETSUKAZU
IPC分类号： H05K3/00 , G03F1/00 , G03F1/38 , G03F9/00 , G05D3/00 , G05D3/12 , H01L21/027 , H01L21/30 , H01L21/68 , H05K3/06
摘要： PURPOSE:To reduce considerably the whole of alignment error by analyzing components of alignment error in an arithmetic processing unit and feeding back the result to a positioning mechanism after detecting the mutual positional slippage between patterns on a mask and on a wafer by a picture detector system.

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