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31. 发明专利

JPH01266715A THIN FILM GROWTH APPARATUS 失效
公开(公告)号：JPH01266715A
公开(公告)日：1989-10-24
申请号：JP9348388
申请日：1988-04-18
申请人： HITACHI LTD
发明人： ONO YUICHI , KONO TOSHIHIRO , ITO KAZUHIRO
IPC分类号： H01L21/205
摘要： PURPOSE:To enable a thin film growth apparatus to be applied to a vapor growth system for every kind of a thin film, by a method wherein the sum of gas flow rate of a gas main flow line and that of a gas discharge line is always maintained at a fixed given value. CONSTITUTION:A gas piping system is provided which comprises at least four lines with one kind of gas in which respective flow control can be performed independently. Two lines among them are treated as a gas main flow line 1 for transporting raw gas to a reaction chamber and a gas discharge line 2 for discharging the raw gas to the outside of a reaction system, respectively, while the remaining two lines are treated as a metal organic gas line 6 for transporting the raw gas together with hydrogen gas and a hydrogen gas line 5 for transporting hydrogen gas of dummy gas, respectively. Under this condition, the sum of gas flow rate of the gas main flow line 1 and that of the gas discharge line 2 is so controlled as to maintain always a fixed value. As a result, both a releasing phenomenon of reactive constituent gas and an addition reaction are prevented, which enables a thin film of good quality to grow.

32. 发明专利

JPS63208293A SEMICONDUCTOR LASER DEVICE 失效
公开(公告)号：JPS63208293A
公开(公告)日：1988-08-29
申请号：JP4024887
申请日：1987-02-25
申请人： HITACHI LTD
发明人： KONO TOSHIHIRO , ONO YUICHI , KAJIMURA TAKASHI , HIRASHIMA KENJI , UEJIMA KENICHI , FUKUI YUKIO , INOUE MASAYUKI , NAKATSUKA SHINICHI , TANAKA TOSHIAKI , OTOSHI SO
IPC分类号： H01S5/00
摘要： PURPOSE:To prevent the interference caused by a plurality of light sources and fo prevent abnormal tracking, by forming a part of at least one end surface of a semiconductor substrate in a slant or curved shape with respect to the end surface of a laser-light emitting part, or by removing a part of the semiconductor substrate in a stripe shape. CONSTITUTION:A part of the end surface of a substrate 1 is slanted by 5 deg. or more with respect to the end surface of a laser-light emitting part or formed in a curved shape at the end surface of a laser device. The distance between an active layer 4 and the slant end surface or the curved end surface is made to be 50 mum or less. When these elements are used as a pickup light source for an optical disc, the primary reflected light, whose image is formed at the distance of about 50 mum from the active layer 4, is hardly returned to a pickup optical system at the end surface of the laser device. Therefore interference due to a plurality of light sources does not occur in the pickup optical system, and abnormal tracking is not yielded.

33. 发明专利

JPS6372173A SEMICONDUCTOR LASER DEVICE 失效
公开(公告)号：JPS6372173A
公开(公告)日：1988-04-01
申请号：JP21571786
申请日：1986-09-16
申请人： HITACHI LTD
发明人： YOSHIZAWA MISUZU , UOMI KAZUHISA , KONO TOSHIHIRO , ONO YUICHI , KAJIMURA TAKASHI
IPC分类号： H01S5/00 , H01S5/042 , H01S5/20 , H01S5/223 , H01S5/32 , H01S5/323
摘要： PURPOSE:To improve the reliability of a self-aligned type semiconductor laser device and to raise a yieal of the device by a method wherein the Al mol ratio of a semiconductor constituting an interface-improving layer is made smaller than, or equal to, the Al mol ratio of a semiconductor forming an active layer. CONSTITUTION:The Al mol ratio of a semiconductor at a stripe-like bottom which is exposed to the air during the formation of a grooved stripe, i.e. a semiconductor constituting an interface-improving layer 11, is made smaller than the Al mol ratio of a semiconductor constituting a clad layer 4. In addition, the refractive index of a buried clad layer 6 is made smaller than the refractive index of the clad layer 4. Alternatively, the semiconductor layer at the stripe-like bottom which is exposed to the air during the formation of the grooved stripe is formed by the interface-improving layer 11 composed of the semiconductor layer whose Al mol ratio is smaller than the Al mol ratio of the clad layer 4 and is bigger than the Al mol ratio of the active layer. Because the width of a forbidden band of the semiconductor for said interface-improving layer 11 is wider than the width of the active layer, there occurs no loss due to absorption by the interface-improving layer 11. Through this constitution, it does not occur that an oxide is formed on the surface which is exposed to the air during the formation of the grooved stripe, and it is possible to manufacture a semiconductor laser device whose yield is high and whose reliability is high.

34. 发明专利

JPS62213188A SEMICONDUCTOR LASER ELEMENT 失效
公开(公告)号：JPS62213188A
公开(公告)日：1987-09-19
申请号：JP5474686
申请日：1986-03-14
申请人： HITACHI LTD
发明人： KAYANE NAOKI , YAMASHITA SHIGEO , NAKATSUKA SHINICHI , YAMANAKA AKEMI , ONO YUICHI , KONO TOSHIHIRO , UOMI KAZUHISA , KAJIMURA TAKASHI , TANAKA TOSHIAKI , AIKI KUNIO
IPC分类号： H01S5/00 , H01S3/00 , H01S5/026 , H01S5/10
摘要： PURPOSE:To reduce astigmatism by forming a laser resonator to a curved- surface shape in a semiconductor laser having stripe width in which a single transverse mode is obtained. CONSTITUTION:A sectional shape in a plane parallel with an active layer for a laser resonator, a semiconductor end surface, is formed to a curved-surface shape. Spot width is narrowed in a cross section such as a convex end surface 1 while the radius of curvature of a wave front (a phase front) is increased with the decrease of the radius of curvature R of the end surface, reaches infinity and takes a negative value and the absolute value is reduced again. On the other hand, spot width is broadened in a concave end surface 2, and the radius of curvature of the wave front is decreased with the shrinkage of the radius of curvature R of the end surface. Accordingly, since the end surfaces are formed to the curved-surface shape, spot width and the redius of curvature of the wave front can be altered, thus reducing astigmatism.

35. 发明专利

JPS6298684A CLEAVING EQUIPMENT 失效
公开(公告)号：JPS6298684A
公开(公告)日：1987-05-08
申请号：JP23724585
申请日：1985-10-25
申请人： HITACHI LTD
发明人： MATSUO AKIHIKO , TAJIMA TAKESHI , KAWAGUCHI KOJI , KAYANE NAOKI , KONO TOSHIHIRO
IPC分类号： H01L21/301 , H01L21/67 , H01L21/677 , H01L21/68 , H01L21/78 , H01S5/00
摘要： PURPOSE:To increase cleavage accuracy, obtain a transparent cleavage face, and achieve high intensity output, by making it possible to cleave a crystal with the same position and direction as those of a prescribed flaw. CONSTITUTION:On a Y-stage, the following are mounted; a rotary stand 33 driven by a motor 32, a vacuum chack 35 to adsorb a wafer 34 and a cleavage mechanism part 37 on the top of which a blade 36 is fixed. The Y-stage is transferred in the Y-direction 41 via linear guides 39 and 40 for a base 38. A wafer is stuck to an adhesive tape 43 of a wafer holder 42, which can be fixed on a X-stage by a pin 44. A diamond point 45 descends and ascends along the wafer surface according to a up-and-down mechanism 46. A TV camera 47 is installed above the wafer, which is connected to a control circuit system 49 together with a TV display 48 to monitor the wafer surface.

36. 发明专利

JPS61253883A SEMICONDUCTOR LASER DEVICE 失效
公开(公告)号：JPS61253883A
公开(公告)日：1986-11-11
申请号：JP9544985
申请日：1985-05-07
申请人： HITACHI LTD
发明人： KAYANE NAOKI , NAKATSUKA SHINICHI , KONO TOSHIHIRO , ONO YUICHI , KAJIMURA TAKASHI
IPC分类号： H01S5/00
摘要： PURPOSE:To improve noise characteristic and to prevent astigmatism, by making refractivity difference extremely near the active layer in the vicinity of the end face, and making the refractivity difference with being spaced from the active layer in the inside of the device, in a case where there provided is a region of a stripe shape having different refractivity near the planar active layer to constitute a refractivity wave guide structure. CONSTITUTION:Outside of the trench 12, current does not flow because of the PNPN structure, and laser oscillation is caused only in the active layer near the trench 12. Since the bottom 13 of the trench 12 is near to the active layer 5 in the vicinity of the end face, oscillated laser mode is confined in the central section owing to the refractivity difference between the P-type clad layer 6 and buried layer 8. Since this is refractivity wave guiding, astigmatism does not result. In the meanwhile, refractivity difference between the GaAs layer 7 and buried layer 12 exists, but is spaced from the active layer 5, so the laser mode is less affected and the vertical mode becomes multi-mode oscillation. Thus there does not exist astigmatism and returning light noise can be reduced.

37. 发明专利

JP2523648B2 失效
公开(公告)号：JP2523648B2
公开(公告)日：1996-08-14
申请号：JP15328487
申请日：1987-06-22
申请人： HITACHI LTD
发明人： YAMASHITA SHIGEO , ONO JUICHI , KAJIMURA TAKASHI , KONO TOSHIHIRO , TANAKA TOSHIAKI
IPC分类号： H01L21/306 , H01S5/00 , H01S3/18

38. 发明专利

JPH0774066A SEMICONDUCTOR DEVICE AND ITS MANUFACTURE 失效
公开(公告)号：JPH0774066A
公开(公告)日：1995-03-17
申请号：JP21953093
申请日：1993-09-03
申请人： HITACHI LTD
发明人： OKUNO YAE , UOMI KAZUHISA , KONO TOSHIHIRO
IPC分类号： H01L21/02 , H01L27/12
摘要： PURPOSE:To reject the propagation of dislocation within device structure formed by direct adhesion onto different kinds of substrates and suppress the dislocation on direct adhesion by placing a dislocation reduction region between a first semiconductor substrate and a second semiconductor substrate. CONSTITUTION:P-InGaAs etching stop layer 11, p -InGaAsP layer 12, p-InP layer 13, undope InGaAsP activation layer 14, and n-InP layer 15 are allowed to grow successively on p-InP substrate 1. Then, InGaP single distortion layer 5 and n-InP layer 9 are allowed to grow successively. After that, the surfaces of n-GaAs substrate 2a and the n-InP layer 9 are washed, are subjected to HF treatment, rinsing, and drying and then washed surfaces face each other and a weight is placed on it before annealing. A miss-fit dislocation occurs at the adhesion interface between the n-GaAs substrate 2a and the n-InP layer 9 and laser is operation for a long time at a high temperature, thus achieving propagation into the n-InP layer 9. However, their propagation is rejected by the InGaP single distortion layer 5.

39. 发明专利

JPH06125131A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH06125131A
公开(公告)日：1994-05-06
申请号：JP10733092
申请日：1992-04-27
申请人： HITACHI LTD , HITACHI TOBU SEMICONDUCTOR LTD
发明人： KONO TOSHIHIRO , UOMI KAZUHISA , YAMASHITA SHIGEO , OKA SATOHIKO , KIKUCHI SATORU
IPC分类号： H01S5/00 , H01S5/227 , H01S3/18
摘要： PURPOSE:To attain the low leakage current structure making no n-n connection at all by taking the interface of the first and second buried layers near mesa stripe as a specific crystalline direction. CONSTITUTION:A clad layer 2, an active layer 3 and another clad layer 4 are grown on a P-InP substrate 1. The whole surface is coated with an SiO2 film to form a mesa stripe having smooth side without a bent part at all using the SiO2 film as a mask. Next, a P-InP layer 5, an n-InP layer 6, another p-InP layer 7 and another n-InP layer 8 are buried in the sides. Next, the surface of the p-InP layer 5 is to be grown until (133) surface is formed represented by surface A, 76+ or -5 deg. with the surface (100). Later when the n-InP layer 6 is continuously grown, the surface A is also grown as if creeping up. When the growing step is terminated before reaching the topmost part of the mesa, the surface of the n-InP layer 6 on the mesa side also becomes the surface A. In such a buried structure, the periphery of the n-InP layer 6 is structured of the p-InP layer encircling the same thereby enabling the block layer structure making no n-n connection at all to be formed.

40. 发明专利

JPH0574723A VAPOR GROWTH DEVICE 失效
公开(公告)号：JPH0574723A
公开(公告)日：1993-03-26
申请号：JP23294091
申请日：1991-09-12
申请人： HITACHI LTD
发明人： TSUCHIYA TOMONOBU , TANIWATARI TAKESHI , KONO TOSHIHIRO , ONO YUICHI
IPC分类号： C30B25/12 , H01L21/205 , H01L21/285 , H01L21/31
摘要： PURPOSE:To obtain a vapor growth device with which high quality crystal having uniform composition can be grown on the surface of a wafer. CONSTITUTION:This vapor growth device is the device in which the temperature distribution on a susceptor 4 is brought into the optimum temperature for growth of wafer 3 only and the part outside the wafer 3 becomes low in temperature. The mixing of impurities from outside the wafer can be suppressed, and also defective density can be decreased.

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