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31. 发明专利

JPS63108788A OPTICAL INTEGRATED CIRCUIT 失效
公开(公告)号：JPS63108788A
公开(公告)日：1988-05-13
申请号：JP25382086
申请日：1986-10-27
申请人： HITACHI LTD , HITACHI CABLE
发明人： MATSUMURA HIROYOSHI , SAKANO SHINJI , TSUJI SHINJI , OISHI AKIO , INOUE HIROAKI , HIRAO MOTONAO
IPC分类号： G02B6/12 , G02B6/42 , H01S5/00
摘要： PURPOSE:To obstruct reflected return beams while stabilizing a laser output and a wavelength by forming a tapered optical guide between a semiconductor laser and the optical guide. CONSTITUTION:An optical integrated circuit is constituted of a semiconductor laser region A and an optical guide region B, an optical guide 1 for a semiconductor laser is shaped in the region A, and a tapered optical guide 2 is formed in the region B. Beams projected by the taper of the optical guide 2 are condensed gradually and changed into an original single mode, and projected to another optcal element, and the single mode reversely reflected from the optical element and being returning is turned slowly into another mode, and mismatched to the waveguide 1, and the projection of a return wave is hindered. A rotational grating 4 is shaped to a section corresponding to the laser section A on the InP substrate 1 for a distributed feedback type semiconductor laser by the irradiation of electron beams, and laser structure having an active layer 5 is formed through an LPE method. A crystal in the tapered optical guide section B is gotten rid of, and the crystal structure of the tapered optical guide 2 is formed through selective epitaxial growth.

32. 发明专利

JPS61214589A SEMICONDUCTOR LASER DEVICE 失效
公开(公告)号：JPS61214589A
公开(公告)日：1986-09-24
申请号：JP5442085
申请日：1985-03-20
申请人： HITACHI LTD
发明人： OKAI MAKOTO , TSUJI SHINJI , NAKAMURA HITOSHI , SAKANO SHINJI , MATSUMURA HIROYOSHI , OISHI AKIO , HIRAO MOTONAO , KAYANE NAOKI
IPC分类号： H01S5/00 , H01S5/12
摘要： PURPOSE:To obtain a semiconductor laser device which realizes a steady single longitudinal mode operation even in the modulation period by a method wherein two or more domains with different refractive indices are provided along the axial direction of a resonator of a DFB laser and the axial widths of those domains are varied from the center to the edge of te resonator. CONSTITUTION:A resist is applied on the whole surface of an N-type InP substrate 1 and grooves 10 are formed by photolithography or RIE. Distances between the adjacent grooves 10 are varied along the axial direction of a resonator from the center to the edge to provide an effective refractive index distribution. An N-type InGaAs guide layer 2, an InGaAsP activation layer 3 and a P-type InGaAsP buffer layer 4 are formed by MO-CVD. A resist is applied on the layer 4 and a grating 9 is formed by laser interference exposure. A P-type InP layer 5 and a P-type InGaAsP surface layer 6 are formed on the grating 9 and a P-type electrode 7 and an N-type electrode 8 are formed on the top and the bottom surfaces respectively. A semiconductor laser can be obtained by cleaving.

33. 发明专利

JPS6144492A Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：JPS6144492A
公开(公告)日：1986-03-04
申请号：JP16012785
申请日：1985-07-22
申请人： Hitachi Ltd
发明人： SATOU NAOSHI , HIRAO MOTONAO , KOBAYASHI MASAYOSHI , MORI TAKAO
IPC分类号： H01L29/43 , H01L21/28 , H01S5/00 , H01S5/042
摘要： PURPOSE: To enhance the reliability of the titled device by preventing the reaction of both of the followings by providing an Mo or W barrier between a III-V group compound semiconductor crystal of GaAlAs, InGaAsP series or the like and a solder of Au or Au-Sn, In-Sn, or Pb-Sn series.
CONSTITUTION: A P type InP 5 and P type InGaAsP 6 are laminated on an InGaAsP active layer 3 filled with a P type InP 2 on an N-InP substrate 1, and an electrode window is provided in an SiO
2 film 7. Next, Cr of about 150∼500Å, Mo or W of about 1,000∼2,000Å, and Au of 1,000∼10,000Å are laminated by successive evaporation. Loading to a heat radiator produces the electrode structure of ohmic electrode and adhesion layer-barrier metallic laser-Au or solder layer. Even under high temperature and high output, the reaction of the solder and the laser constituent or the rise in operating current due to the diffusion of solder into the laser element never occurs.
COPYRIGHT: (C)1986,JPO&Japio
摘要翻译：目的：为了通过在GaAlAs，InGaAsP系列等的III-V族化合物半导体晶体和Au或Au的焊料之间提供Mo或W阻挡层来防止两者的反应来提高标题器件的可靠性 -Sn，In-Sn或Pb-Sn系列。构成：将AP型InP 5和P型InGaAsP 6层叠在N-InP基板1上填充有P型InP 2的InGaAsP活性层3上，在SiO 2膜7中设置电极窗。接着，将Cr 150-500埃，Mo或W为约1,000-2,000埃，Au为1,000-10,000埃，通过连续蒸发层压。负载到散热器产生欧姆电极和粘附层阻挡金属激光Au或焊料层的电极结构。即使在高温高输出的情况下，由于焊料向激光元件的扩散也不会发生焊料与激光成分的反应或工作电流的上升。

34. 发明专利

JPS60126882A DISTRIBUTED FEEDBACK TYPE SEMICONDUCTOR LASER DEVICE 失效
公开(公告)号：JPS60126882A
公开(公告)日：1985-07-06
申请号：JP23423883
申请日：1983-12-14
申请人： HITACHI LTD
发明人： KAYANE NAOKI , TSUJI SHINJI , FUJISAKI YOSHIHISA , KASHIWADA YASUTOSHI , HIRAO MOTONAO
IPC分类号： H01S5/00 , H01S5/10 , H01S5/12 , H01S5/183
摘要： PURPOSE:To obtain a distributed feedback type semiconductor laser stably oscillating in a single mode by dividing a diffraction grating into regions having different Bragg wavelengths and arranging each resion in a cascade in the direction of an optical axis. CONSTITUTION:An N type InP layer (a buffer layer) 2, an InGaAsP layer (an active layer) 3 and an InGaAsP layer (an optical guide layer) 4 are grown on an N type InP substrate 1 through a known liquid phase growth method in succession. The surface of the optical guide layer 4 is exposed through an interference exposure method to form a desired pattern having periodic irregularities, and irregularities 7, 8 having different periods in a region I and a region II are shaped. A P type InP clad layer 5 and a P type InGaAsP layer (a contact layer) 6 are grown on the irregularities 7, 8 in succession, and an N side electrode 9 consisting of Au-Sn is formed on the lower side of the substrate 1 and a P-side electrode 10 composed of Cr-Au on the upper side of the contact layer 6. According to such constitution, single longitudinal mode oscillation can be realized with excellent reproducibility without depending upon the variance of an element.

35. 发明专利

JPS6053018A IMPURITY DIFFUSION TO COMPOUND SEMICONDUCTOR 失效
公开(公告)号：JPS6053018A
公开(公告)日：1985-03-26
申请号：JP16034183
申请日：1983-09-02
申请人： HITACHI LTD
发明人： MORI TAKAO , TSUJI SHINJI , NAKAYAMA YOSHINORI , FUJISAKI YOSHIHISA , HIRAO MOTONAO
IPC分类号： H01L21/22 , H01L21/223 , H01L33/30 , H01L33/40 , H01S5/00
摘要： PURPOSE:To form a shallow impurity diffusion layer with high concentration, and moreover having favorable reproducibility when Zn is to be diffused to a compound semiconductor containing phosphorus by a method wherein an impurity diffusion source composed of zinc phosphide and phsphorus is used. CONSTITUTION:To diffuse Zn into InP, InGaAsP, when diffusion is performed adding phosphorus to a diffusion dopant source in addition to the simple substance of ZnP2, Zn3P2, the diffusing speed thereof can be controlled, and moreover, when an ohmic electrode is formed on the diffused layer, the favorably low resistance ohmic electrode can be obtained, and surface concentration of the diffused layer is also enlarged sufficiently. When an InGaAsP/InP semiconductor laser device is to be manufactured applying this invention, a Zn selective diffusion layer 510 of 8mum width and 1mum depth is formed using an oxide film 509 formed according to the CVD method as a mask to reduce contact resistance of the ohmic electrode 508 consisting of Cr/Au and to be formed on a P type InGaAsP layer. At this time, when Zn is diffused according to the diffusion source added with P to ZnP2, and the temperature is made at 610 deg.C and the diffusion time is made for 20-30min, a shallow diffusion layer can be formed at a high temperature and moreover under a favorable diffusion condition having favorable controllability.

36. 发明专利

JPS6030141A ETCHING DEVICE 失效
公开(公告)号：JPS6030141A
公开(公告)日：1985-02-15
申请号：JP13754583
申请日：1983-07-29
申请人： HITACHI LTD , HITACHI IRUMA DENSHI KK
发明人： NAKAYAMA YOSHINORI , TSUJI SHINJI , HIRAO MOTONAO , NAKAMURA MICHIHARU , TSUCHIYA MASAAKI , ICHIKI MASAHIRO
IPC分类号： H01L21/306
摘要： PURPOSE:To agitate an etching liquid sufficiently, to improve the reproducibility of the depth of etching and to obtain the dimensional accuracy of a mesa shape having excellent controllability by uniformly moving a crystal to be etched in parallel with a stripe to the etching liquid when mesa structure is formed on the compound semiconductor crystal through chemical etching. CONSTITUTION:The revolution of a motor 16 is converted into a reciprocating motion by a revolving rotor 13 and a vibrating shaft 12, and a crystal support jig 11 is vibrated in an etching liquid 18 and a crystal is etched. The progress of etching can be made sure by a visual observation from the horizontal direction (b) in the direction of vibration by a specular body 10 or the monitor of a TV20, etc., the depth of etching can be observed while using the surface of the crystal as a stabilized image, the end point of etching can be grasped without interrupting a vibration, and the control of the depth of etching can be realized with excellet reproducibility.

37. 发明专利

JPS6021587A SEMICONDUCTOR LASER DEVICE 失效
公开(公告)号：JPS6021587A
公开(公告)日：1985-02-02
申请号：JP12768383
申请日：1983-07-15
申请人： HITACHI LTD
发明人： TSUJI SHINJI , MIZUISHI KENICHI , MORI TAKAO , HIRAO MOTONAO , NAKAYAMA YOSHINORI
IPC分类号： H01S5/00 , H01S5/227
摘要： PURPOSE:To reduce or eliminate the influence of crystal defect on an element structure by a method wherein an InGaAsP/InP buried hetero type laser is provided with a buried layer of a structure wherein an InGaAsP four-element layer is sandwiched by InP crystals. CONSTITUTION:The first crystal part 1' is composed of an InGaAsP active layer 11 on a substrate 3, a P type InGaAsP surface layer 13, and an InP 12; a buried crystal part 2' of a P type InP 21, an N type InP 22, an N type InGaAsP 24, a P type InP 25, and a P type InGaAsP layer 23 in this order from the substrate InP 3. Since the Peierls force of InGaAsP is larger than that of InP, the advancement of dislocation introduced in the wafer process is inhibited by the presence of the four-element layer 24, and accordingly the reactive current flowing through the buried layer can be reduced.

38. 发明专利

JPS5511310A SEMICONDUCTOR LASER ELEMENT 失效
公开(公告)号：JPS5511310A
公开(公告)日：1980-01-26
申请号：JP8301478
申请日：1978-07-10
申请人： HITACHI LTD
发明人： KASHIMURA TAKASHI , HIRAO MOTONAO , NAKAMURA MICHIHARU , KURODA IKUROU , YAMASHITA SHIGEO , UMEDA JIYUNICHI
IPC分类号： H01L21/208 , H01S5/00 , H01S5/22 , H01S5/323
摘要： PURPOSE:To easily shorten the oscillation wavelength, by providing clad layers, made of GaAlAsP and of opposite conducting types, on both sides of a GaInAsP crystal active layer and selecting the forbidden band of the clad layers large compared with the active layer. CONSTITUTION:Clad layer 2, of No.1 conducting type and made of GaAlAsP crystal, is provided on the upper part of semiconductor base 4, and active layer 1, made of GaInAsP, is formed on layer 2. Clad layer 3, of conducting type poppsite to that of layer 2 and made of GaAlAsP crystal, is provided on layer 1, and thereby a double-hetero structure is formed. By this, the refraction index of layers 2 and 3 on both sides of layer 1, the region in which laser oscillation or light modulation is operated, is low compared with layer 1, so that it is possible to select the forbidden band large and shorten the oscillation wavelength easily.

39. 发明专利

JPS5368570A FORMATION METHOD OF SEMICONDUCTOR EPITAXIAL FILM 失效
公开(公告)号：JPS5368570A
公开(公告)日：1978-06-19
申请号：JP14333876
申请日：1976-12-01
申请人： HITACHI LTD
发明人： WATANABE KIKUO , HIRAO MOTONAO , ASANO TETSUO , AOKI MASAO
IPC分类号： H01L29/80 , C30B25/18 , H01L21/205 , H01L21/338 , H01L29/812 , H01L29/94
摘要： PURPOSE:To make the supply of epitaxial film forming molecules to substrate crystal surface uniform and obtain a grown layer of an even thickness by beforehand making rough the surface of a support jig for placement of a semiconductor crystal substrate.

40. 发明专利

JPS5366882A CROWING METHOD FOR EPITAXIAL SEMICONDUCTOR FILM 失效
公开(公告)号：JPS5366882A
公开(公告)日：1978-06-14
申请号：JP14125676
申请日：1976-11-26
申请人： HITACHI LTD
发明人： ASANO TETSUO , WATANABE KIKUO , HIRAO MOTONAO
IPC分类号： C30B25/12 , C01B25/08 , H01L21/205
摘要： PURPOSE:To grow eqitaxial film of uniform thickness in wafer surface by growing epitaxial film on substratum crystal holding apparatus so as to remove de fects in film thickness distribution.

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