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31. 发明申请

US20050121768A1 Silicon chip carrier with conductive through-vias and method for fabricating same 有权
标题翻译：具有导电通孔的硅芯片载体及其制造方法
公开(公告)号：US20050121768A1
公开(公告)日：2005-06-09
申请号：US10729254
申请日：2003-12-05
申请人： Daniel Edelstein , Paul Andry , Leena Buchwalter , Jon Casey , Sherif Goma , Raymond Horton , Gareth Hougham , Michael Lane , Xiao Liu , Chirag Patel , Edmund Sprogis , Michelle Steen , Brian Sundlof , Cornelia Tsang , George Walker
发明人： Daniel Edelstein , Paul Andry , Leena Buchwalter , Jon Casey , Sherif Goma , Raymond Horton , Gareth Hougham , Michael Lane , Xiao Liu , Chirag Patel , Edmund Sprogis , Michelle Steen , Brian Sundlof , Cornelia Tsang , George Walker
IPC分类号： H01L21/48 , H01L21/768 , H01L23/498 , H01L23/48 , H01L21/4763
CPC分类号： H01L23/49883 , H01L21/486 , H01L21/76898 , H01L23/49827 , H01L2224/16 , H01L2924/01004 , H01L2924/01019 , H01L2924/01078 , H01L2924/01079 , H01L2924/01322 , H01L2924/09701 , H01L2924/10253 , H01L2924/15311 , H01L2924/3011 , H01L2924/3025 , H01L2924/00
摘要： A carrier structure and method for fabricating a carrier structure with through-vias each having a conductive structure with an effective coefficient of thermal expansion which is less than or closely matched to that of the substrate, and having an effective elastic modulus value which is less than or closely matches that of the substrate. The conductive structure may include concentric via fill areas having differing materials disposed concentrically therein, a core of the substrate material surrounded by an annular ring of conductive material, a core of CTE-matched non-conductive material surrounded by an annular ring of conductive material, a conductive via having an inner void with low CTE, or a full fill of a conductive composite material such as a metal-ceramic paste which has been sintered or fused.
摘要翻译：一种载体结构和方法，用于制造具有通孔的载流子结构，每个导通孔具有导电结构，其有效热膨胀系数小于或接近于基板的热膨胀系数，并且具有小于或等于或者与衬底的密切匹配。导电结构可以包括同心的通孔填充区域，其具有同心设置的不同材料，由导电材料的环形环包围的衬底材料的芯，由导电材料的环形环包围的CTE匹配的非导电材料的芯，具有低CTE的内部空隙的导电通孔，或已经烧结或熔合的诸如金属 - 陶瓷浆料的导电复合材料的完整填充物。

32. 发明申请

US20050106902A1 Interposer with electrical contact button and method 有权
标题翻译：内插器与电气接触按钮和方法
公开(公告)号：US20050106902A1
公开(公告)日：2005-05-19
申请号：US10715288
申请日：2003-11-17
申请人： Gareth Hougham , Keith Fogel , Joanna Rosner , Paul Lauro , Sherif Goma , Joseph Zinter
发明人： Gareth Hougham , Keith Fogel , Joanna Rosner , Paul Lauro , Sherif Goma , Joseph Zinter
IPC分类号： H01L23/32 , H01L23/48 , H01L23/498 , H01R12/00 , H05K3/32 , H05K3/40 , H05K3/42 , H05K7/10
CPC分类号： H05K7/1069 , H01L23/49827 , H01L2924/0002 , H01L2924/09701 , H01R12/52 , H05K3/326 , H05K3/4092 , H05K3/42 , H05K2201/10378 , H05K2203/308 , Y10T29/49147 , Y10T29/49151 , Y10T29/49155 , Y10T29/49156 , Y10T29/49204 , Y10T29/49222 , H01L2924/00
摘要： An interposer having one or more hollow electrical contact buttons disposed in a carrier. The interposer is formed by disposing sacrificial posts in vias of the carrier. The electrical contact buttons are formed on the sacrificial posts by a metallizing process in desired pattern using a mask. The sacrificial posts are made of a material that thermally decomposes upon application of heat without altering the carrier or the electrical contact buttons.
摘要翻译：具有设置在载体中的一个或多个中空电触点按钮的插入器。中间层通过在载体的通孔中设置牺牲柱而形成。通过使用掩模的期望图案的金属化处理在牺牲柱上形成电接触按钮。牺牲柱由在施加热量时热分解而不改变载体或电触点按钮的材料制成。

33. 发明申请

US20050100743A1 Negative coefficient of thermal expansion particles and method of forming the same 失效
标题翻译：热膨胀颗粒的负系数及其形成方法
公开(公告)号：US20050100743A1
公开(公告)日：2005-05-12
申请号：US10702280
申请日：2003-11-06
申请人： Gareth Hougham , Xiao Liu , S. Chey , James Doyle , Joseph Zinter , Michael Rooks , Brian Sundlof , Jon Casey
发明人： Gareth Hougham , Xiao Liu , S. Chey , James Doyle , Joseph Zinter , Michael Rooks , Brian Sundlof , Jon Casey
IPC分类号： B32B15/08 , B32B27/00 , H01R13/24 , H01R43/00 , H05K1/02 , H05K3/32
CPC分类号： H01R13/2414 , B32B15/08 , H01R43/007 , H05K1/0271 , H05K3/321 , H05K3/325 , H05K2201/0218 , H05K2201/068 , Y10T428/12028 , Y10T428/12181 , Y10T428/12535 , Y10T428/249971 , Y10T428/249974 , Y10T428/31609
摘要： A negative coefficient of thermal expansion particle includes a first bilayer having a first bilayer inner layer and a first bilayer outer layer, and a second bilayer having a second bilayer inner layer and a second bilayer outer layer. The first and second bilayers are joined together along perimeters of the first and second bilayer outer layers and first and second bilayer inner layers, respectively. The first bilayer inner layer and the second bilayer inner layer are made of a first material and the first bilayer outer layer and the second bilayer outer layer are made of a second material. The first material has a greater coefficient of thermal expansion than that of the second material.
摘要翻译：负系数的热膨胀粒子包括具有第一双层内层和第一双层外层的第一双层和具有第二双层内层和第二双层外层的第二双层。第一和第二双层分别沿着第一和第二双层外层以及第一和第二双层内层的周边连接在一起。第一双层内层和第二双层内层由第一材料制成，第一双层外层和第二双层外层由第二材料制成。第一种材料具有比第二种材料更大的热膨胀系数。

34. 发明授权

US06764313B2 High density interconnects 有权
标题翻译：高密度互连
公开(公告)号：US06764313B2
公开(公告)日：2004-07-20
申请号：US10038483
申请日：2002-01-03
申请人： Gareth Hougham
发明人： Gareth Hougham
IPC分类号： H01R1200
CPC分类号： H01R12/57 , H01R4/01 , H01R12/52 , H01R13/2421 , H05K3/325 , H05K7/1061
摘要： A method of forming an electrical interconnection between a first electrical device and a second electrical device comprises the steps of providing contacts in an uncompressed state. The uncompressed contacts are then deformed to a compressed state and then the contacts are positioned in a device adapted to hold the contacts between the first and second electrical devices. Or alternatively, the uncompressed contacts are positioned in the device and then compressed to the compressed state. The contacts are then activated to substantially expand to the uncompressed state wherein each contact expands to substantially its uncompressed state for establishing the electrical interconnection between the first and second electrical devices.
摘要翻译：在第一电气设备和第二电气设备之间形成电互连的方法包括以非压缩状态提供接触的步骤。然后将未压缩的触头变形到压缩状态，然后将触头定位在适于将触头保持在第一和第二电气装置之间的装置中。或者，未压缩的触点定位在设备中，然后被压缩到压缩状态。接触件然后被激活以基本上膨胀到未压缩状态，其中每个触头扩展到基本上其未压缩状态，以建立第一和第二电气装置之间的电互连。

35. 发明授权

US09040841B2 Axiocentric scrubbing land grid array contacts and methods for fabrication 有权
标题翻译：轴心洗涤地面网格阵列触点和制造方法
公开(公告)号：US09040841B2
公开(公告)日：2015-05-26
申请号：US13604363
申请日：2012-09-05
申请人： Gareth Hougham , Gerard McVicker , Xiaoxiong Gu , Sung K. Kang , Frank R. Libsch , Xiao H. Liu
发明人： Gareth Hougham , Gerard McVicker , Xiaoxiong Gu , Sung K. Kang , Frank R. Libsch , Xiao H. Liu
IPC分类号： H05K1/11 , H05K3/40 , H01R12/70 , H01R12/71 , H01R13/24 , H05K3/32
CPC分类号： H05K1/11 , H01R12/7082 , H01R12/714 , H01R13/2414 , H01R13/2421 , H01R43/16 , H05K3/326 , H05K3/4092 , H05K2201/0311 , H05K2201/10265 , H05K2201/10378 , Y10T29/49224 , Y10T29/49226
摘要： A contact structure and assembly and a method for manufacturing the same for a microelectronics device includes first and second electrically conductive contacts being helically shaped. A carrier element is attached to and positioned between the first and second contacts. The first and second contacts are in electrical communication with each other, and the first and second contacts are in a mirror image relationship with each other. A pair of insulating substrates each include electrically conductive members. A contact point on each of the first and second contacts is attached and electrically communicating to respective electrically conductive members such that the first and second electrically conductive contacts between the pair of insulating substrates form an electrically conductive package. A metal layer on the carrier element provides electrical conductivity through a first opening defined by the carrier element between the first and second portions of the helix shaped contact.
摘要翻译：接触结构和组件及其制造方法用于微电子器件包括第一和第二导电接触件，其为螺旋形的。载体元件附接到并定位在第一和第二触点之间。第一和第二触点彼此电连通，并且第一和第二触点彼此成镜像关系。一对绝缘基板各自包括导电构件。每个第一和第二触点上的接触点被附接并与相应的导电构件电连通，使得该对绝缘基板之间的第一和第二导电触点形成导电封装。载体元件上的金属层通过由载体元件在螺旋形接触件的第一和第二部分之间限定的第一开口提供导电性。

36. 发明授权

US08959764B2 Metallurgical clamshell methods for micro land grid array fabrication 有权
标题翻译：用于微地面网格阵列制造的冶金蛤壳式方法
公开(公告)号：US08959764B2
公开(公告)日：2015-02-24
申请号：US12614231
申请日：2009-11-06
申请人： Gareth Hougham , Gerard McVicker , Xiaoxiong Gu
发明人： Gareth Hougham , Gerard McVicker , Xiaoxiong Gu
IPC分类号： H01R43/00
CPC分类号： H01L24/14 , H01L21/486 , H01L23/48 , H01L23/49827 , H01L24/11 , H01L24/17 , H01L24/81 , H01L25/50 , H01L2224/11622 , H01L2224/1182 , H01L2224/13014 , H01L2224/13017 , H01L2224/1607 , H01L2224/16145 , H01L2224/81101 , H01L2224/81208 , H01L2224/81899 , H01L2225/06513 , H01L2924/0002 , H01L2924/12042 , H01L2924/15313 , H01L2924/15323 , H01L2924/15333 , H01R13/02 , H01R13/2421 , H01R43/16 , H05K3/064 , H05K3/326 , H05K3/4092 , H05K2201/0355 , H05K2201/0382 , H05K2201/10265 , H05K2201/10378 , Y10T29/49126 , Y10T29/49208 , Y10T29/49218 , Y10T29/49222 , Y10T29/49224 , H01L2924/00
摘要： A structure and method for manufacturing the same for manufacturing a contact structure for microelectronics manufacturing including the steps of forming first and second metal sheets to form a plurality of outwardly extending bump each defining a cavity. Symmetrically mating the first and second metal sheets in opposing relation to each other to form upper and lower bumps each defining an enclosure therebetween wherein the mated first and second sheets form a contact structure. Coating the contact structure with an insulating material, and fabricating helix shaped contacts from upper and lower bumps. The helix shaped contacts having first and second portions being in mirror image relationship to each other.
摘要翻译：一种用于制造用于微电子制造的接触结构的结构和方法，包括以下步骤：形成第一和第二金属片以形成多个向外延伸的凸起，每个限定腔。将第一和第二金属板彼此相对地对称地配合，以形成每个限定其间的外壳的上凸块和下凸块，其中配合的第一和第二板形成接触结构。用绝缘材料涂覆接触结构，并从上部和下部凸块制造螺旋形接触。具有彼此成镜像关系的第一和第二部分的螺旋形接触件。

37. 发明申请

US20080064143A1 Microelectronic Devices and Methods 有权
标题翻译：微电子器件与方法
公开(公告)号：US20080064143A1
公开(公告)日：2008-03-13
申请号：US11932793
申请日：2007-10-31
申请人： Sri Sri-Jayantha , Gareth Hougham , Sung Kang , Lawrence Mok , Hien Dang , Arun Sharma
发明人： Sri Sri-Jayantha , Gareth Hougham , Sung Kang , Lawrence Mok , Hien Dang , Arun Sharma
IPC分类号： H01L21/00
CPC分类号： H01L23/552 , H01L23/3677 , H01L2924/0002 , H01L2924/00
摘要： A microelectronic device is made of a semiconductor substrate, a heat generating component in a layer thereof, and a body within the remaining semiconductor substrate. The body is made of materials which have a high thermal inertia and/or thermal conductivity. When high thermal conductivity materials are used, the body acts to transfer the heat away from the substrate to a heat sink.
摘要翻译：微电子器件由半导体衬底，其一层中的发热元件和剩余半导体衬底内的主体构成。主体由具有高热惯性和/或导热性的材料制成。当使用高导热性材料时，主体用于将热量从基板转移到散热器。

38. 发明申请

US20080032520A1 LAND GRID ARRAY (LGA) INTERPOSER UTILIZING METAL-ON-ELASTOMER HEMI-TORUS AND OTHER MULTIPLE POINTS OF CONTACT GEOMETRIES 有权
公开(公告)号：US20080032520A1
公开(公告)日：2008-02-07
申请号：US11865305
申请日：2007-10-01
申请人： Gareth Hougham , Brian Beaman , Evan Colgan , Paul Coteus , Stefano Oggioni , Enrique Vargas
发明人： Gareth Hougham , Brian Beaman , Evan Colgan , Paul Coteus , Stefano Oggioni , Enrique Vargas
IPC分类号： H01R12/16
CPC分类号： H01R12/714 , H01L2224/16225 , H01L2224/32225 , H01L2224/73204 , H01R12/52 , H05K3/326 , H05K3/4007 , H05K7/1061 , H05K2201/0133 , H05K2201/0367 , H05K2201/09481 , H05K2201/09745 , H05K2201/10378 , H05K2201/10734 , Y10T29/49002 , Y10T29/49121 , Y10T29/49124 , Y10T29/49126 , Y10T29/49128 , Y10T29/4913 , Y10T29/49147 , Y10T29/49149 , Y10T29/49151 , Y10T29/49155 , Y10T29/49158 , Y10T29/49165 , Y10T29/49204 , Y10T29/49208 , Y10T29/49213 , Y10T29/49218 , Y10T29/49222 , H01L2924/00
摘要： A land grid array (LGA) interposer structure, including an electrically insulating carrier plane, and at least one interposer mounted on a first surface of said carrier plane. The interposer possesses a hemi-toroidal configuration in transverse cross-section and is constituted of a dielectric elastomeric material. A plurality of electrically-conductive elements are arranged about the surface of the at least one hemi-toroidal interposer and extend radically inwardly and downwardly from an uppermost end thereof into electrical contact with at least one component located on an opposite side of the electrically insulating carrier plane. Provided is also a method of producing the land grid array interposer structure.

39. 发明申请

US20080023845A1 LAND GRID ARRAY (LGA) INTERPOSER UTILIZING METAL-ON-ELASTOMER HEMI-TORUS AND OTHER MULTIPLE POINTS OF CONTACT GEOMETRIES 有权
公开(公告)号：US20080023845A1
公开(公告)日：2008-01-31
申请号：US11865395
申请日：2007-10-01
申请人： Gareth Hougham , Brian Beaman , Evan Colgan , Paul Coteus , Stefano Oggioni , Enrique Vargas
发明人： Gareth Hougham , Brian Beaman , Evan Colgan , Paul Coteus , Stefano Oggioni , Enrique Vargas
IPC分类号： H01L23/48
CPC分类号： H01R12/714 , H01L2224/16225 , H01L2224/32225 , H01L2224/73204 , H01R12/52 , H05K3/326 , H05K3/4007 , H05K7/1061 , H05K2201/0133 , H05K2201/0367 , H05K2201/09481 , H05K2201/09745 , H05K2201/10378 , H05K2201/10734 , Y10T29/49002 , Y10T29/49121 , Y10T29/49124 , Y10T29/49126 , Y10T29/49128 , Y10T29/4913 , Y10T29/49147 , Y10T29/49149 , Y10T29/49151 , Y10T29/49155 , Y10T29/49158 , Y10T29/49165 , Y10T29/49204 , Y10T29/49208 , Y10T29/49213 , Y10T29/49218 , Y10T29/49222 , H01L2924/00
摘要： A land grid array (LGA) interposer structure, including an electrically insulating carrier plane, and at least one interposer mounted on a first surface of said carrier plane. The interposer possesses a hemi-toroidal configuration in transverse cross-section and is constituted of a dielectric elastomeric material. A plurality of electrically-conductive elements are arranged about the surface of the at least one hemi-toroidal interposer and extend radically inwardly and downwardly from an uppermost end thereof into electrical contact with at least one component located on an opposite side of the electrically insulating carrier plane. Provided is also a method of producing the land grid array interposer structure.

40. 发明申请

US20080020603A1 LAND GRID ARRAY (LGA) INTERPOSER UTILIZING METAL-ON-ELASTOMER HEMI-TORUS AND OTHER MULTIPLE POINTS OF CONTACT GEOMETRIES 失效
公开(公告)号：US20080020603A1
公开(公告)日：2008-01-24
申请号：US11865321
申请日：2007-10-01
申请人： Gareth Hougham , Brian Beaman , Evan Colgan , Paul Coteus , Stefano Oggioni , Enrique Vargas
发明人： Gareth Hougham , Brian Beaman , Evan Colgan , Paul Coteus , Stefano Oggioni , Enrique Vargas
IPC分类号： H01R12/22
CPC分类号： H01R12/714 , H01L2224/16225 , H01L2224/32225 , H01L2224/73204 , H01R12/52 , H05K3/326 , H05K3/4007 , H05K7/1061 , H05K2201/0133 , H05K2201/0367 , H05K2201/09481 , H05K2201/09745 , H05K2201/10378 , H05K2201/10734 , Y10T29/49002 , Y10T29/49121 , Y10T29/49124 , Y10T29/49126 , Y10T29/49128 , Y10T29/4913 , Y10T29/49147 , Y10T29/49149 , Y10T29/49151 , Y10T29/49155 , Y10T29/49158 , Y10T29/49165 , Y10T29/49204 , Y10T29/49208 , Y10T29/49213 , Y10T29/49218 , Y10T29/49222 , H01L2924/00
摘要： A land grid array (LGA) interposer structure, including an electrically insulating carrier plane, and at least one interposer mounted on a first surface of said carrier plane. The interposer possesses a hemi-toroidal configuration in transverse cross-section and is constituted of a dielectric elastomeric material. A plurality of electrically-conductive elements are arranged about the surface of the at least one hemi-toroidal interposer and extend radically inwardly and downwardly from an uppermost end thereof into electrical contact with at least one component located on an opposite side of the electrically insulating carrier plane. Provided is also a method of producing the land grid array interposer structure.

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