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31. 发明申请

US20060286770A1 Method for concurrently producing at least a pair of semiconductor structures that each include at least one useful layer on a substrate 失效
标题翻译：用于同时产生至少一对半导体结构的方法，每个半导体结构在衬底上包括至少一个有用层
公开(公告)号：US20060286770A1
公开(公告)日：2006-12-21
申请号：US11509047
申请日：2006-08-24
申请人： Bruno Ghyselen , Cecile Aulnette , Benoit Bataillou , Carlos Mazure , Hubert Moriceau
发明人： Bruno Ghyselen , Cecile Aulnette , Benoit Bataillou , Carlos Mazure , Hubert Moriceau
IPC分类号： H01L21/30 , H01L21/46
CPC分类号： H01L21/76254 , Y10S438/977
摘要： A method for producing a semiconductor structure that includes at least one useful layer on a substrate. This method includes providing a source substrate with a zone of weakness therein that defines a relatively thick useful layer between the zone of weakness and a front face of the source substrate; bonding the front face of the source substrate to a support substrate and detaching the useful layer from the source substrate at the zone of weakness to transfer the useful layer to the support substrate; implanting atomic species into a free face of the useful layer to a controlled mean implantation depth therein to form a zone of weakness within the useful layer that defines front and rear useful layers, with the rear useful layer contacting the source substrate and the front useful layer containing a greater concentration of defects; bonding a stiffening substrate to the free face of the front useful layer after implantation of the atomic species; and detaching the front useful layer from the rear useful layer along the zone of weakness to form a semiconductor structure comprising the support substrate and the rear useful layer thereon. The structures obtained can be used in the fields of electronics, optoelectronics or optics.
摘要翻译：一种用于制造半导体结构的方法，所述半导体结构在衬底上包括至少一个有用层。该方法包括提供源极基底中的弱化区域，其在弱化区域和源极基底的前面之间限定相对较厚的有用层; 将源极基板的正面粘合到支撑基板上，并在弱化区域将有用层与源极基板分离，以将有用层转移到支撑基板; 将原子物质植入有用层的自由面中，以在其中形成受控的平均注入深度，以在限定前后有用层的有用层内形成弱化区，其中后部有用层与源极基底和前部有用层接触含有较大浓度的缺陷; 在加入原子物质之后将加强基底粘合到前有用层的自由面上; 并且沿着弱化区从后部有用层分离前部有用层，以形成包括支撑基板和其上的后部有用层的半导体结构。所获得的结构可用于电子学，光电子学或光学领域。

32. 发明授权

US06809044B1 Method for making a thin film using pressurization 有权
标题翻译：使用加压制造薄膜的方法
公开(公告)号：US06809044B1
公开(公告)日：2004-10-26
申请号：US10018757
申请日：2002-03-20
申请人： Bernard Aspar , Michel Bruel , Hubert Moriceau
发明人： Bernard Aspar , Michel Bruel , Hubert Moriceau
IPC分类号： H01L21425
CPC分类号： H01L21/76251 , H01L21/2007 , Y10S438/977
摘要： The invention relates to a process for making a thin film starting from a substrate (1) of a solid material with a plane face (2) comprising: the implantation of gaseous compounds in the substrate (1) to make a layer of micro-cavities (4) at a depth from the said plane face (2) corresponding to the thickness of the required thin film, the gaseous compounds being implanted under conditions that could weaken the substrate at the layer of micro-cavities, partial or total separation of the thin film from the rest of the substrate (1), this separation comprising a step in which thermal energy is added and pressure is applied to the said plane face (2).
摘要翻译：本发明涉及从具有平面（2）的固体材料的基材（1）开始制造薄膜的方法，该方法包括：将气态化合物注入基材（1）中以形成一个微孔（4）在与所述薄膜的厚度对应的所述平面（2）的深度处，气态化合物在可能削弱微腔层的基底的条件下被注入，部分或全部分离从基板（1）的其余部分的薄膜，该分离包括添加热能并将压力施加到所述平面（2）的步骤。

33. 发明授权

US06808967B1 Method for producing a buried layer of material in another material 失效
标题翻译：用于在另一种材料中制造掩埋层材料的方法
公开(公告)号：US06808967B1
公开(公告)日：2004-10-26
申请号：US09806511
申请日：2001-04-16
申请人： Bernard Aspar , Michel Bruel , Hubert Moriceau
发明人： Bernard Aspar , Michel Bruel , Hubert Moriceau
IPC分类号： H01L2100
CPC分类号： H01L21/26533 , H01L21/76245
摘要： The aim of the invention is a method for producing a layer (2) of a first material embedded in a substrate (1) comprising at least one second material. The method comprises the following stages: formation in the substrate (1), at the level of the desired embedded layer, of a layer of microcavities intended to serve as centers of nucleation to produce said first material in said second material, formation of precipitate embryos from the nucleation centers formed, the precipitate embryos corresponding to the first material, growth of the precipitates from the embryos through species concentration corresponding to the first material and carried to the microcavity layer.
摘要翻译：本发明的目的是一种用于生产包含至少一种第二材料的衬底（1）中的第一材料的层（2）的方法。该方法包括以下步骤：在所需嵌入层的基底（1）的水平上形成旨在用作成核中心以在所述第二材料中产生所述第一材料的微腔层，形成沉淀胚胎从成核中心形成，沉淀胚胎对应于第一种材料，从胚胎生长沉淀物质浓度对应于第一种物质并运送到微腔层。

34. 发明授权

US06204079B1 Selective transfer of elements from one support to another support 有权
标题翻译：元素从一个支持选择性转移到另一个支持
公开(公告)号：US06204079B1
公开(公告)日：2001-03-20
申请号：US09352783
申请日：1999-07-14
申请人： Bernard Aspar , Hubert Moriceau , Olivier Rayssac
发明人： Bernard Aspar , Hubert Moriceau , Olivier Rayssac
IPC分类号： H01L2100
CPC分类号： H01L21/568 , H01L21/6835 , H01L24/29 , H01L24/83 , H01L24/97 , H01L2221/68354 , H01L2221/68368 , H01L2224/83191 , H01L2224/8385 , H01L2224/97 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01023 , H01L2924/01033 , H01L2924/01039 , H01L2924/01058 , H01L2924/01072 , H01L2924/01074 , H01L2924/01087 , H01L2924/07802 , H01L2924/12042 , H01L2224/83 , H01L2924/00
摘要： A process for the selective transfer of elements from a transfer support to a reception support, the elements bonding through a first face to the transfer support according to a defined bonding energy, the elements each having a second face configured to contact with the reception support. Elements to be transferred are transferred by applying a bonding energy between them and the reception support that exceeds the bonding energy between their first face and the transfer support. Elements not to be transferred onto the transfer support are retained.
摘要翻译：一种用于将元件从转移支撑件选择性地传送到接收支撑件的过程，所述元件根据限定的结合能将第一面粘接到转印支撑件，每个元件具有被配置为与接收支撑件接触的第二面。通过在它们之间施加超过其第一面和转印支撑体之间的结合能的接收支撑体之间的结合能量来转移待转移的元件。不转移到转印支架上的元素被保留。

35. 发明授权

US08877539B2 Method for producing a photovoltaic cell including the preparation of the surface of a crystalline silicon substrate 有权
标题翻译：包括制备晶体硅衬底表面的光伏电池的方法
公开(公告)号：US08877539B2
公开(公告)日：2014-11-04
申请号：US13522829
申请日：2011-01-26
申请人： Hubert Moriceau , Pierre Mur , Pierre-Jean Ribeyron
发明人： Hubert Moriceau , Pierre Mur , Pierre-Jean Ribeyron
IPC分类号： H01L31/18 , H01L31/20 , H01L21/306 , H01L31/0236 , H01L31/075
CPC分类号： H01L21/30604 , H01L31/02363 , H01L31/075 , H01L31/18 , H01L31/202 , Y02E10/548 , Y02P70/521
摘要： A method for producing of at least one photovoltaic cell includes successively the anisotropic etching of a surface of a crystalline silicon substrate and the isotropic etching treatment of said surface. The isotropic etching treatment includes at least two successive operations respectively consisting in forming a silicon oxide thin film with a controlled average thickness, ranging between 10 nm and 500 nm and in removing said thin film thus-formed. The operation consisting in forming a silicon oxide thin film on the face of the substrate is carried out by a thermally activated dry oxidation. Such a method makes it possible to improve the surface quality of the surface of the substrate once said surface is etched in an anisotropic way.
摘要翻译：至少一个光伏电池的制造方法包括：连续地对结晶硅衬底的表面进行各向异性蚀刻以及所述表面的各向同性蚀刻处理。各向同性蚀刻处理包括至少两个连续的操作，分别包括形成具有可控平均厚度的氧化硅薄膜，范围在10nm和500nm之间，并且去除所形成的所述薄膜。通过热活化干法氧化进行在基板表面上形成氧化硅薄膜的操作。这种方法使得一旦所述表面以各向异性的方式被蚀刻，就可以提高基板的表面的表面质量。

36. 发明申请

US20130196484A1 PROCESS FOR PRODUCING A FILM, FOR EXAMPLE A SINGLE-CRYSTAL FILM, ON A POLYMER SUBSTRATE 有权
标题翻译：用于生产膜的方法，例如聚合物基材上的单晶膜
公开(公告)号：US20130196484A1
公开(公告)日：2013-08-01
申请号：US13819993
申请日：2011-08-24
申请人： Hubert Moriceau , Maxime Argoud , Christophe Morales , Marc Zussy
发明人： Hubert Moriceau , Maxime Argoud , Christophe Morales , Marc Zussy
IPC分类号： H01L21/762
CPC分类号： H01L21/76251 , H01L21/2007 , H01L21/68 , H01L21/6835 , H01L21/762 , H01L21/76224
摘要： A method for obtaining a film made out of a first material on a polymer support, said method comprising bonding a first wafer to a second wafer, thereby defining a bonding interface between said first wafer and said second wafer, at least one of said first and second wafers comprising a layer of said first material situated in proximity to said bonding interface, in said first wafer, hollowing out a cavity, said cavity comprising a bottom parallel to said bonding interface that defines, in said first wafer, a bottom zone at a controlled distance relative to said second wafer, forming, in said cavity, a polymer layer on a thickness controlled from a bottom thereof to obtain a combined wafer portion, said combined wafer portion comprising a bottom zone formed by said polymer layer on said bottom and a peripheral zone, and eliminating said second wafer on a major portion of a thickness thereof, thereby releasing, beneath said polymer layer, a film comprising said layer of said first material.
摘要翻译：一种用于获得由聚合物载体上的第一材料制成的膜的方法，所述方法包括将第一晶片接合到第二晶片，由此限定所述第一晶片和所述第二晶片之间的结合界面，所述第一和第二晶片中的至少一个第二晶片包括位于所述接合界面附近的所述第一材料层，在所述第一晶片中，挖空出空腔，所述空腔包括平行于所述结合界面的底部，所述底部在所述第一晶片中在在所述空腔中形成从其底部控制的厚度的聚合物层以获得组合的晶片部分，所述组合的晶片部分包括由所述底部上的所述聚合物层形成的底部区域和周边区域，并且在其厚度的主要部分上消除所述第二晶片，从而在所述聚合物层下方释放包含所述第一材料层的膜 ial

37. 发明授权

US08329048B2 Method for trimming a structure obtained by the assembly of two plates 有权
标题翻译：用于修整通过组装两个板获得的结构的方法
公开(公告)号：US08329048B2
公开(公告)日：2012-12-11
申请号：US11722115
申请日：2005-12-22
申请人： Marc Zussy , Bernard Aspar , Chrystelle Lagahe-Blanchard , Hubert Moriceau
发明人： Marc Zussy , Bernard Aspar , Chrystelle Lagahe-Blanchard , Hubert Moriceau
IPC分类号： B23B37/02
CPC分类号： H01L21/02008 , H01L21/76251 , H01L21/76254 , Y10T156/10
摘要： A method for trimming a structure obtained by bonding a first wafer to a second waver on contact faces and thinning the first waver, wherein at least either the first wafer or the second wafer is chamfered and thus exposes the edge of the contact face of the first wafer, wherein the trimming concerns the first wafer. The method includes a) selecting the second wafer from among wafers with a resistance to a chemical etching planned in b) that is sufficient with respect to the first wafer to allow b) to be carried out; b) after bonding the first wafer to the second wafer, chemical etching the edge of the first wafer to form in the first wafer a pedestal resting entirely on the contact face of the second wafer and supporting the remaining of the first wafer; and c) thinning the first wafer until the pedestal is reached and attacked, to provide a thinned part of the first wafer.
摘要翻译：一种用于修整通过将第一晶片接合在接触面上的第二摆动件并使第一摇摆器变薄而获得的结构的方法，其中至少第一晶片或第二晶片被倒角，从而使第一晶片或第二晶片的接触面的边缘暴露在第一晶片，其中修整涉及第一晶片。该方法包括：a）从具有对b）中计划的化学蚀刻的抗性的晶片中选择第二晶片，相对于第一晶片来说足以允许b）被执行; b）在将第一晶片接合到第二晶片之后，化学蚀刻第一晶片的边缘，以在第一晶片中形成完全搁置在第二晶片的接触面上并支撑第一晶片的剩余部分的基座; 以及c）使所述第一晶片变薄直到所述基座到达并受到攻击，以提供第一晶片的变薄部分。

38. 发明申请

US20120100719A1 METHOD FOR MAKING A PLANAR MEMBRANE 失效
标题翻译：制备平面膜的方法
公开(公告)号：US20120100719A1
公开(公告)日：2012-04-26
申请号：US13377319
申请日：2010-06-17
申请人： Christophe Constancias , Bernard Dalzotto , Frank Fournel , Philippe Michallon , Hubert Moriceau , Valerie Pouteau
发明人： Christophe Constancias , Bernard Dalzotto , Frank Fournel , Philippe Michallon , Hubert Moriceau , Valerie Pouteau
IPC分类号： H01L21/31 , G01N3/08
CPC分类号： B81C1/00158 , B81B2201/0264 , B81B2201/047 , B81C2201/017
摘要： A method for determining a minimum tension compensation stress which will have a membrane of a thickness of less than or equal to one micrometer, secured to a frame, having, in the absence of any external stress, a desired deflection. The membrane can be made as planar as possible in absence of any external stress, and its thickness can be less than or equal to one micrometer.
摘要翻译：一种用于确定最小张力补偿应力的方法，其将具有小于或等于1微米厚度的膜，固定到框架，在没有任何外部应力的情况下具有期望的偏转。膜可以在没有任何外部应力的情况下制成尽可能平坦的，并且其厚度可以小于或等于1微米。

39. 发明申请

US20120088352A1 PROCESS FOR ASSEMBLING SUBSTRATES WITH LOW-TEMPERATURE HEAT TREATMENTS 有权
标题翻译：用低温热处理装配基板的方法
公开(公告)号：US20120088352A1
公开(公告)日：2012-04-12
申请号：US13273982
申请日：2011-10-14
申请人： Rémi Beneyton , Hubert Moriceau , Frank Fournel , François Rieutord , Yannick Le Tiec
发明人： Rémi Beneyton , Hubert Moriceau , Frank Fournel , François Rieutord , Yannick Le Tiec
IPC分类号： H01L21/762
CPC分类号： C09J5/06
摘要： The invention relates to a process for producing a bond between a first and a second substrate. The process includes preparing surfaces of the substrates to be assembled, and attaching the surfaces to form an assembly of these two surfaces, by direct molecular bonding. The assembly is then heat treated, which includes maintaining the temperature within the range of 50° C. to 100° C. for at least one hour.
摘要翻译：本发明涉及一种用于在第一和第二基底之间产生粘结的方法。该方法包括制备要组装的基底的表面，并且通过直接分子键合来附着表面以形成这两个表面的组合。然后对组件进行热处理，其包括将温度保持在50℃至100℃的范围内至少1小时。

40. 发明授权

US07940477B2 Solid immersion lens and related method for making same 失效
标题翻译：固体浸没透镜及其制作方法
公开(公告)号：US07940477B2
公开(公告)日：2011-05-10
申请号：US12678730
申请日：2008-09-16
申请人： Mickaël Brun , Salim Mimouni , Sergio Nicoletti , Ludovic Poupinet , Hubert Moriceau
发明人： Mickaël Brun , Salim Mimouni , Sergio Nicoletti , Ludovic Poupinet , Hubert Moriceau
IPC分类号： G02B3/08 , G02B7/02
CPC分类号： G01Q60/22 , B29D11/00009 , B29D11/00346 , G01Q70/12 , G11B7/1374 , G11B7/1387
摘要： The invention generally pertains to the field of solid immersion lenses for optical applications in high resolution microscopy. The lens of the invention includes a spherical sector limited by a planar surface and an object having nanometric dimensions arranged on the planar surface at the focus of said solid immersion lens. A light-opaque layer having a central opening with nanometric dimensions can be provided on the planar surface, said opening being centred on the focus of the solid immersion lens. The nano-object can be a tube or a thread having a cylindrical shape. The lens of the invention can be made using lithography techniques.
摘要翻译：本发明一般涉及在高分辨率显微镜中用于光学应用的固体浸没透镜领域。本发明的透镜包括由平面表面限制的球形部分和在所述固体浸没透镜的焦点处的平面表面上具有纳米尺寸的物体。具有纳米尺寸的中心开口的不透光层可以设置在平坦表面上，所述开口以固体浸没透镜的焦点为中心。纳米物体可以是具有圆柱形状的管或线。本发明的透镜可以使用光刻技术制成。

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