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31. 发明授权

US07994502B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US07994502B2
公开(公告)日：2011-08-09
申请号：US12325439
申请日：2008-12-01
申请人： Shunpei Yamazaki , Hidekazu Miyairi , Yasuhiro Jinbo
发明人： Shunpei Yamazaki , Hidekazu Miyairi , Yasuhiro Jinbo
IPC分类号： H01L29/786
CPC分类号： H01L27/1288 , H01L21/67017 , H01L21/67207 , H01L27/1214 , H01L27/124 , H01L27/1244 , H01L29/04 , H01L29/41733 , H01L29/4908 , H01L29/66742 , H01L29/66765 , H01L29/78678 , H01L29/78687 , H01L29/78696
摘要： An object is to reduce off-current of a thin film transistor. Another object is to improve electric characteristics of a thin film transistor. Further, it is still another object to improve image quality of a display device using the thin film transistor. An aspect of the present invention is a thin film transistor including a semiconductor film formed over a gate electrode and in an inner region of the gate electrode which does not reach an end portion of the gate electrode, with a gate insulating film interposed therebetween, a film covering at least a side surface of the semiconductor film, and a pair of wirings over the film covering the side surface of the semiconductor film; in which an impurity element serving as a donor is added to the semiconductor film.
摘要翻译：目的是减少薄膜晶体管的截止电流。另一个目的是改善薄膜晶体管的电特性。此外，还有另一个目的是提高使用薄膜晶体管的显示装置的图像质量。本发明的一个方面是一种薄膜晶体管，它包括半导体膜，该半导体膜形成在栅电极之上，并且在栅电极的内部区域中，其不到达栅电极的端部，栅极绝缘膜介于它们之间，至少覆盖半导体膜的侧面的膜，以及覆盖半导体膜的侧面的膜上的一对配线; 其中作为供体的杂质元素被添加到半导体膜。

32. 发明申请

US20080087629A1 Method for Manufacturing Semiconductor Device 有权
标题翻译：半导体器件制造方法
公开(公告)号：US20080087629A1
公开(公告)日：2008-04-17
申请号：US11869951
申请日：2007-10-10
申请人： Akihisa Shimomura , Hidekazu Miyairi , Yasuhiro Jinbo
发明人： Akihisa Shimomura , Hidekazu Miyairi , Yasuhiro Jinbo
IPC分类号： C23C14/00 , B05D3/06
CPC分类号： H01L27/1288 , B23K26/0661 , B23K26/0732 , G03F7/20 , G03F7/70291 , H01L27/1214 , H01L29/66757 , H01L29/66765 , H01L29/78633
摘要： The present invention provides a method by which a thin film process can be conducted simply and accurately without using resist. Further, the present invention provides a method of manufacturing semiconductor devices at low cost. A first layer is formed over a substrate, a peeling layer is formed over the first layer, the peeling layer is selectively irradiated with a laser beam from the peeling layer side to reduce adhesiveness of a part of the peeling layer. Next, the peeling layer in the part with reduced adhesiveness is removed, and the left portion of the peeling layer is used as a mask to selectively etch the first layer.
摘要翻译：本发明提供一种方法，通过该方法，可以在不使用抗蚀剂的情况下简单且准确地进行薄膜处理。此外，本发明提供了一种以低成本制造半导体器件的方法。在衬底上形成第一层，在第一层上形成剥离层，用剥离层侧的激光束选择性地照射剥离层，以减少剥离层的一部分的粘附性。接下来，去除粘合性降低的部分中的剥离层，并且将剥离层的左部用作掩模以选择性地蚀刻第一层。

33. 发明申请

US20080070393A1 Method for Manufacturing Semiconductor Device 有权
标题翻译：半导体器件制造方法
公开(公告)号：US20080070393A1
公开(公告)日：2008-03-20
申请号：US11839349
申请日：2007-08-15
申请人： Hidekazu Miyairi , Yasuhiro Jinbo , Eiji Higa , Shunpei Yamazaki
发明人： Hidekazu Miyairi , Yasuhiro Jinbo , Eiji Higa , Shunpei Yamazaki
IPC分类号： H01L21/311 , H01L21/3205 , H01L21/44
CPC分类号： H01L27/1288 , B23K26/0884 , B23K2101/006 , G03F1/20 , H01L21/3086 , H01L21/32139 , H01L27/1214 , H01L29/42384 , H01L29/66765
摘要： In a manufacturing process of a semiconductor device, a manufacturing technique for reducing the number of lithography processes that use a photoresist and simplifying the process is provided, which improves throughput. An etching mask for forming a pattern of a layer to be processed such as a conductive layer or a semiconductor layer is manufactured without using a lithography technique that uses a photoresist. The etching mask is formed of a light absorption layer including a material which absorbs a laser beam. The mask is formed by irradiating the light absorption layer with a laser beam through a photomask and utilizing laser ablation by energy of the laser beam absorbed by the light absorption layer.
摘要翻译：在半导体器件的制造工艺中，提供了减少使用光致抗蚀剂并简化工艺的光刻工艺的数量的制造技术，这提高了生产率。在不使用使用光致抗蚀剂的光刻技术的情况下，制造用于形成诸如导电层或半导体层的被处理层的图案的蚀刻掩模。蚀刻掩模由包括吸收激光束的材料的光吸收层形成。通过光掩模用激光束照射光吸收层并利用由光吸收层吸收的激光束的能量进行激光烧蚀来形成掩模。

34. 发明申请

US20080020555A1 Method for manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20080020555A1
公开(公告)日：2008-01-24
申请号：US11826228
申请日：2007-07-13
申请人： Akihisa Shimomura , Hidekazu Miyairi , Fumito Isaka , Yasuhiro Jinbo , Junya Maruyama
发明人： Akihisa Shimomura , Hidekazu Miyairi , Fumito Isaka , Yasuhiro Jinbo , Junya Maruyama
IPC分类号： H01L21/20
CPC分类号： H01L21/02683 , H01L21/02422 , H01L21/02532 , H01L21/02592 , H01L21/02686 , H01L21/2026 , H01L27/1214 , H01L27/1266 , H01L27/1285 , H01L29/66757 , H01L29/78603 , H01L29/78675
摘要： It is an object to provide a method of manufacturing a crystalline silicon device and a semiconductor device in which formation of cracks in a substrate, a base protective film, and a crystalline silicon film can be suppressed. First, a layer including a semiconductor film is formed over a substrate, and is heated. A thermal expansion coefficient of the substrate is 6×10−7/° C. to 38×10−7/° C., preferably 6×10−7/° C. to 31.8×10−7/° C. Next, the layer including the semiconductor film is irradiated with a laser beam to crystallize the semiconductor film so as to form a crystalline semiconductor film. Total stress of the layer including the semiconductor film is −500 N/m to +50 N/m, preferably −150 N/m to 0 N/m after the heating step.
摘要翻译：本发明的目的是提供一种制造晶体硅器件和半导体器件的方法，其中可以抑制衬底，基底保护膜和晶体硅膜中的裂纹的形成。首先，在基板上形成包含半导体膜的层，并加热。基板的热膨胀系数为6×10 -7 /℃至38×10 -7 /℃，优选6×10 -7 / ℃至31.8×10 -7 /℃。接下来，用激光束照射包含半导体膜的层，以使半导体膜结晶，从而形成结晶半导体膜。包括半导体膜的层的总应力在加热步骤之后为-500N / m至+ 50N / m，优选为-150N / m至0N / m。

35. 发明授权

US09054206B2 Method for manufacturing semiconductor device 有权
公开(公告)号：US09054206B2
公开(公告)日：2015-06-09
申请号：US12222109
申请日：2008-08-01
申请人： Shunpei Yamazaki , Sachiaki Teduka , Satoshi Toriumi , Makoto Foruno , Yasuhiro Jinbo , Koji Dairiki , Hideaki Kuwabara
发明人： Shunpei Yamazaki , Sachiaki Teduka , Satoshi Toriumi , Makoto Foruno , Yasuhiro Jinbo , Koji Dairiki , Hideaki Kuwabara
IPC分类号： H01L21/84 , H01L29/786 , H01L29/04 , H01L29/417 , H01L29/49 , H01L29/66 , H01L21/02 , H01L21/67 , H01L27/12
CPC分类号： H01L29/78696 , H01L21/02532 , H01L21/0262 , H01L21/67207 , H01L27/1288 , H01L29/04 , H01L29/41733 , H01L29/4908 , H01L29/66765 , H01L29/78678
摘要： After a gate insulating film is formed over a gate electrode, in order to improve the quality of a microcrystalline semiconductor film which is formed in an early stage of deposition, a film near an interface with the gate insulating film is formed under a first deposition condition in which a deposition rate is low but the quality of a film to be formed is high, and then, a film is further deposited under a second deposition condition in which a deposition rate is high. Then, a buffer layer is formed to be in contact with the microcrystalline semiconductor film. Further, plasma treatment with a rare gas such as argon or hydrogen plasma treatment is performed before formation of the film under the first deposition condition for removing adsorbed water on a substrate.

36. 发明授权

US09048327B2 Microcrystalline semiconductor film, method for manufacturing the same, and method for manufacturing semiconductor device 有权
标题翻译：微晶半导体膜及其制造方法以及半导体装置的制造方法
公开(公告)号：US09048327B2
公开(公告)日：2015-06-02
申请号：US13355340
申请日：2012-01-20
申请人： Tetsuhiro Tanaka , Takashi Ienaga , Ryu Komatsu , Erika Kato , Ryota Tajima , Yasuhiro Jinbo
发明人： Tetsuhiro Tanaka , Takashi Ienaga , Ryu Komatsu , Erika Kato , Ryota Tajima , Yasuhiro Jinbo
IPC分类号： H01L21/00 , H01L29/786 , H01L21/02 , H01L29/04 , H01L29/66
CPC分类号： H01L29/78696 , H01L21/02422 , H01L21/0245 , H01L21/02502 , H01L21/02513 , H01L21/02532 , H01L21/02595 , H01L21/02598 , H01L21/0262 , H01L29/04 , H01L29/66765 , H01L29/78648 , H01L29/78654 , H01L29/78678
摘要： An embodiment of the present invention is a microcrystalline semiconductor film having a thickness of more than or equal to 70 nm and less than or equal to 100 nm and including a crystal grain partly projecting from a surface of the microcrystalline semiconductor film. The crystal grain has an orientation plane and includes a crystallite having a size of 13 nm or more. Further, the film density of the microcrystalline semiconductor film is higher than or equal to 2.25 g/cm3 and lower than or equal to 2.35 g/cm3, preferably higher than or equal to 2.30 g/cm3 and lower than or equal to 2.33 g/cm3.
摘要翻译：本发明的一个实施方案是具有大于或等于70nm且小于或等于100nm的厚度的微晶半导体膜，并且包括从微晶半导体膜的表面部分地突出的晶粒。晶粒具有取向平面，并且包括尺寸为13nm以上的微晶。此外，微晶半导体膜的膜密度高于或等于2.25g / cm 3，低于或等于2.35g / cm 3，优选高于或等于2.30g / cm 3，低于或等于2.33g / cm3。

37. 发明授权

US08994060B2 Method of manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08994060B2
公开(公告)日：2015-03-31
申请号：US13164893
申请日：2011-06-21
申请人： Yasuhiro Jinbo , Toshiyuki Isa , Tatsuya Honda
发明人： Yasuhiro Jinbo , Toshiyuki Isa , Tatsuya Honda
IPC分类号： H01L33/00 , H01L29/786 , H01L27/12 , H01L27/28 , H01L49/02 , H01L21/20 , H01L27/32 , H01L51/00 , H01L51/56
CPC分类号： H01L21/02686 , H01L21/02532 , H01L21/02565 , H01L21/2026 , H01L27/12 , H01L27/1214 , H01L27/1266 , H01L27/283 , H01L27/3258 , H01L27/3274 , H01L28/40 , H01L29/24 , H01L29/42356 , H01L29/45 , H01L29/4908 , H01L29/495 , H01L29/66969 , H01L29/78603 , H01L29/7869 , H01L51/003 , H01L51/56 , H01L2227/323 , H01L2227/326 , H01L2251/5338
摘要： An object of the invention is to provide a method for manufacturing semiconductor devices that are flexible in which elements fabricated using a comparatively low-temperature (less than 500° C.) process are separated from a substrate. After a molybdenum film is formed over a glass substrate, a molybdenum oxide film is formed over the molybdenum film, a nonmetal inorganic film and an organic compound film are stacked over the molybdenum oxide film, and elements fabricated by a comparatively low-temperature (less than 500° C.) process are formed using existing manufacturing equipment for large glass substrates, the elements are separated from the glass substrate.
摘要翻译：本发明的目的是提供一种制造半导体器件的方法，该半导体器件是柔性的，其中使用比较低温（小于500℃）的工艺制造的元件与衬底分离。在玻璃基板上形成钼膜之后，在钼膜上形成氧化钼膜，在氧化钼膜上层叠非金属无机膜和有机化合物膜，通过比较低温（少于使用现有的用于大玻璃基板的制造设备来形成工艺，元件与玻璃基板分离。

38. 发明授权

US08823030B2 Light-emitting device and lighting device 有权
标题翻译：发光装置及照明装置
公开(公告)号：US08823030B2
公开(公告)日：2014-09-02
申请号：US13560046
申请日：2012-07-27
申请人： Yasuhiro Jinbo , Kensuke Yoshizumi
发明人： Yasuhiro Jinbo , Kensuke Yoshizumi
IPC分类号： H01L33/00
CPC分类号： H01L51/5265 , H01L51/504 , H01L51/5212 , H01L51/5275 , H01L2251/5361
摘要： A light-emitting device which has various emission colors and can be manufactured efficiently and easily is provided. A first conductive layer formed of a semi-transmissive and semi-reflective conductive film is provided in a first light-emitting element region, so that the intensity of light in a specific wavelength region is increased with a cavity effect. As a result, the light-emitting device as a whole can emit desired light. When the first conductive layer is formed using a material with low electric resistance, voltage drop in a transparent conductive layer in the light-emitting device can be prevented. Accordingly, a light-emitting device with less emission unevenness can be manufactured. By applying such a structure to a white-light-emitting device, desired white light emission or white light emission with an excellent color rendering property can be obtained. Further, a large-area lighting device including a white-light-emitting device with less emission unevenness can be provided.
摘要翻译：提供具有各种发光颜色并且可以有效且容易地制造的发光装置。由半透射半导体膜形成的第一导电层设置在第一发光元件区域中，使得特定波长区域中的光的强度随腔效应而增加。结果，整个发光装置可以发出所需的光。当使用具有低电阻的材料形成第一导电层时，可以防止发光器件中的透明导电层中的电压降。因此，可以制造发光不均匀性较差的发光元件。通过将这种结构应用于白色发光元件，可以获得具有优异显色特性的期望的白色发光或白色发光。此外，可以提供包括具有较少发射不均匀性的白光发射装置的大面积照明装置。

39. 发明授权

US08207538B2 Thin film transistor 有权
标题翻译：薄膜晶体管
公开(公告)号：US08207538B2
公开(公告)日：2012-06-26
申请号：US12899089
申请日：2010-10-06
申请人： Yasuhiro Jinbo
发明人： Yasuhiro Jinbo
IPC分类号： H01L33/00
CPC分类号： H01L29/66765 , H01L29/42384 , H01L29/4908 , H01L29/78618 , H01L29/78669
摘要： A thin film transistor includes a first insulating layer covering the gate electrode layer; source and drain regions which at least partly overlaps with the gate electrode layer; a pair of second insulating layers which is provided apart from each other in a channel length direction over the first insulating layer and which at least partly overlaps with the gate electrode layer and the pair of impurity semiconductor layers; a pair of microcrystalline semiconductor layers provided apart from each other on and in contact with the second insulating layers; and an amorphous semiconductor layer covering the first insulating layer, the pair of second insulating layers, and the pair of microcrystalline semiconductor layers and which extends to exist between the pair of microcrystalline semiconductor layers. The first insulating layer is a silicon nitride layer and each of the pair of the second insulating layers is a silicon oxynitride layer.
摘要翻译：薄膜晶体管包括覆盖栅电极层的第一绝缘层; 源极和漏极区域，其至少部分地与栅电极层重叠; 一对第二绝缘层，其在所述第一绝缘层上在沟道长度方向上彼此分开设置，并且至少部分地与所述栅电极层和所述一对杂质半导体层重叠; 一对微晶半导体层，其彼此分开设置在第二绝缘层上并与第二绝缘层接触; 以及覆盖所述第一绝缘层，所述一对第二绝缘层和所述一对微晶半导体层并且延伸以存在于所述一对微晶半导体层之间的非晶半导体层。第一绝缘层是氮化硅层，一对第二绝缘层中的每一个都是氮氧化硅层。

40. 发明授权

US08053294B2 Manufacturing method of thin film transistor by controlling generation of crystal nuclei of microcrystalline semiconductor film 有权
标题翻译：通过控制微晶半导体膜的晶核的生成来制造薄膜晶体管的方法
公开(公告)号：US08053294B2
公开(公告)日：2011-11-08
申请号：US12424557
申请日：2009-04-16
申请人： Shunpei Yamazaki , Yasuhiro Jinbo
发明人： Shunpei Yamazaki , Yasuhiro Jinbo
IPC分类号： H01L21/00 , H01L21/84 , H01L29/10 , H01L29/76 , H01L31/036 , H01L31/112 , H01L27/108 , H01L29/00 , H01L29/12 , H01L27/14 , H01L29/04 , H01L29/15
CPC分类号： H01L27/127 , C23C16/0272 , C23C16/24 , H01L27/1214 , H01L27/1288 , H01L29/04 , H01L29/41733 , H01L29/66765 , H01L29/78621 , H01L29/78669 , H01L29/78678 , H01L29/78696
摘要： It is an object to control quality of a microcrystalline semiconductor film or a semiconductor film including crystal grains so that operation characteristics of a semiconductor element typified by a TFT can be improved. It is another object to improve characteristics of a semiconductor element typified by a TFT by controlling a deposition process of a microcrystalline semiconductor film or a semiconductor film including crystal grains. In addition, it is another object to increase on-state current of a thin film transistor and to reduce off-state current of the thin film transistor. In a semiconductor layer including a plurality of crystalline regions in an amorphous structure, generation positions and generation density of crystal nuclei from which the crystalline regions start to grow are controlled, whereby quality of the semiconductor layer is controlled. In addition, after generation of crystal nuclei from which the crystalline regions start to grow in the semiconductor layer, an impurity element serving as a donor is added to the semiconductor layer, whereby crystallinity of the semiconductor layer is increased and the resistivity of the semiconductor layer is reduced.
摘要翻译：本发明的目的是控制微晶半导体膜或包含晶粒的半导体膜的质量，从而可以提高由TFT代表的半导体元件的工作特性。另一个目的是通过控制微晶半导体膜或包括晶粒的半导体膜的沉积工艺来改善由TFT代表的半导体元件的特性。此外，另一个目的是增加薄膜晶体管的导通电流并且减小薄膜晶体管的截止电流。在包括非晶结构中的多个结晶区域的半导体层中，控制晶体区域开始生长的晶核的产生位置和发生密度，从而控制半导体层的质量。此外，在半导体层中产生结晶区域开始生长的晶核之后，在半导体层中添加用作施主的杂质元素，由此半导体层的结晶度增加，半导体层的电阻率降低了。

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