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    • 36. 发明授权
    • Three-dimensional memory device incorporating segmented array line memory array
    • 三维存储器件结合分段阵列线存储器阵列
    • US08637870B2
    • 2014-01-28
    • US13348336
    • 2012-01-11
    • Roy E. ScheuerleinAlper IlkbaharLuca G. Fasoli
    • Roy E. ScheuerleinAlper IlkbaharLuca G. Fasoli
    • H01L27/10
    • G11C7/18G11C16/0416G11C16/0466G11C17/12G11C17/18G11C2213/71G11C2213/77Y10S257/91
    • A three-dimensional (3D) high density memory array includes multiple layers of segmented bit lines (i.e., sense lines) with segment switch devices within the memory array that connect the segments to global bit lines. The segment switch devices reside on one or more layers of the integrated circuit, preferably residing on each bit line layer. The global bit lines reside preferably on one layer below the memory array, but may reside on more than one layer. The bit line segments preferably share vertical connections to an associated global bit line. In certain EEPROM embodiments, the array includes multiple layers of segmented bit lines with segment connection switches on multiple layers and shared vertical connections to a global bit line layer. Such memory arrays may be realized with much less write-disturb effects for half selected memory cells, and may be realized with a much smaller block of cells to be erased.
    • 三维(3D)高密度存储器阵列包括多个分段位线(即感测线),其中存储器阵列内的段切换器件将段连接到全局位线。 分段交换设备驻留在集成电路的一个或多个层上,优选地驻留在每个位线层上。 全局位线优选地位于存储器阵列下方的一个层上,但可驻留在多于一个层上。 位线段优选地共享到相关联的全局位线的垂直连接。 在某些EEPROM实施例中,该阵列包括多层分段位线,其中多层具有段连接开关,并且共享与全局位线层的垂直连接。 这样的存储器阵列可以通过对于半选择的存储器单元的更少的写入干扰效应来实现,并且可以用要被擦除的小得多的单元块来实现。
    • 38. 发明申请
    • Method and apparatus for improving yield in semiconductor devices by guaranteeing health of redundancy information
    • 通过保证冗余信息的健康来提高半导体器件产量的方法和装置
    • US20070291563A1
    • 2007-12-20
    • US11894861
    • 2007-08-21
    • Alper IlkbaharDerek Bosch
    • Alper IlkbaharDerek Bosch
    • G11C29/04
    • G11C29/76
    • A method is provided comprising reading a set of memory cells indicating whether stored redundancy information is reliable and, if the set of memory cells indicates that the stored redundancy information is reliable, determining whether to read primary memory or redundant memory based on the stored redundancy information. Another method is provided comprising reading a set of memory cells associated with a group of memory cells in a primary memory, the set of memory cells indicating whether data can be reliably stored in the group of memory cells; if the set of memory cells indicates that data can be reliably stored in the group of memory cells, storing data in the group of memory cells; and if the set of memory cells does not indicate that data can be reliably stored in the group of memory cells, storing data in a group of memory cells in a redundant memory. In another preferred embodiment, a method for providing memory redundancy is provided.
    • 提供了一种方法,其包括:读取一组存储器单元,指示存储的冗余信息是否可靠;以及如果存储单元组指示所存储的冗余信息是可靠的,则基于所存储的冗余信息确定是否读取主存储器还是冗余存储器 。 提供了另一种方法,包括读取与主存储器中的一组存储器单元相关联的一组存储器单元,该组存储器单元指示数据是否可以可靠地存储在存储器单元组中; 如果存储器单元组指示数据可以可靠地存储在存储器单元组中,则将数据存储在存储单元组中; 并且如果存储器单元组不指示数据可以可靠地存储在存储器单元组中,则将数据存储在冗余存储器中的一组存储器单元中。 在另一个优选实施例中,提供了一种用于提供存储器冗余的方法。