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31. 发明申请

US20140008742A1 MAGNETIC TUNNELING JUNCTION SEED, CAPPING, AND SPACER LAYER MATERIALS 有权
标题翻译：磁性隧道接头，覆盖层和间隔层材料
公开(公告)号：US20140008742A1
公开(公告)日：2014-01-09
申请号：US13491568
申请日：2012-06-07
申请人： Eugene Youjun Chen , Xueti Tang
发明人： Eugene Youjun Chen , Xueti Tang
IPC分类号： H01L43/10
CPC分类号： H01L43/10 , B82Y25/00 , B82Y40/00 , G01R33/098 , G11C11/161 , H01F10/3254 , H01F10/3286 , H01F41/307 , H01F41/34 , H01L27/228 , H01L43/08
摘要： In one embodiment, a magnetic element for a semiconductor device includes a reference layer, a free layer, and a nonmagnetic spacer layer disposed between the reference layer and the free layer. The nonmagnetic spacer layer includes a binary, ternary, or multi-nary alloy oxide material. The binary, ternary, or multi-nary alloy oxide material includes MgO having one or more additional elements selected from the group consisting of: Ru, Al, Ta, Tb, Cu, V, Hf, Zr, W, Ag, Au, Fe, Co, Ni, Nb, Cr, Mo, and Rh.
摘要翻译：在一个实施例中，用于半导体器件的磁性元件包括设置在参考层和自由层之间的参考层，自由层和非磁性间隔层。非磁性间隔层包括二元，三元或多元合金氧化物材料。二元，三元或多元合金氧化物材料包括具有选自Ru，Al，Ta，Tb，Cu，V，Hf，Zr，W，Ag，Au，Fe中的一种或多种另外的元素的MgO ，Co，Ni，Nb，Cr，Mo和Rh。

32. 发明授权

US08779538B2 Magnetic tunneling junction seed, capping, and spacer layer materials 有权
标题翻译：磁隧道结种子，封盖和间隔层材料
公开(公告)号：US08779538B2
公开(公告)日：2014-07-15
申请号：US13491568
申请日：2012-06-07
申请人： Eugene Youjun Chen , Xueti Tang
发明人： Eugene Youjun Chen , Xueti Tang
IPC分类号： H01L27/22 , H01L29/04 , H01L47/00 , G11B5/33 , G11B5/127
CPC分类号： H01L43/10 , B82Y25/00 , B82Y40/00 , G01R33/098 , G11C11/161 , H01F10/3254 , H01F10/3286 , H01F41/307 , H01F41/34 , H01L27/228 , H01L43/08
摘要： In one embodiment, a magnetic element for a semiconductor device includes a reference layer, a free layer, and a nonmagnetic spacer layer disposed between the reference layer and the free layer. The nonmagnetic spacer layer includes a binary, ternary, or multi-nary alloy oxide material. The binary, ternary, or multi-nary alloy oxide material includes MgO having one or more additional elements selected from the group consisting of: Ru, Al, Ta, Tb, Cu, V, Hf, Zr, W, Ag, Au, Fe, Co, Ni, Nb, Cr, Mo, and Rh.
摘要翻译：在一个实施例中，用于半导体器件的磁性元件包括设置在参考层和自由层之间的参考层，自由层和非磁性间隔层。非磁性间隔层包括二元，三元或多元合金氧化物材料。二元，三元或多元合金氧化物材料包括具有选自Ru，Al，Ta，Tb，Cu，V，Hf，Zr，W，Ag，Au，Fe中的一种或多种另外的元素的MgO ，Co，Ni，Nb，Cr，Mo和Rh。

33. 发明授权

US08546896B2 Magnetic tunneling junction elements having magnetic substructures(s) with a perpendicular anisotropy and memories using such magnetic elements 有权
标题翻译：具有垂直各向异性的磁性子结构的磁隧道连接元件和使用这种磁性元件的存储器
公开(公告)号：US08546896B2
公开(公告)日：2013-10-01
申请号：US12941031
申请日：2010-11-06
申请人： Daniel Lottis , Eugene Youjun Chen , Xueti Tang , Steven M. Watts
发明人： Daniel Lottis , Eugene Youjun Chen , Xueti Tang , Steven M. Watts
IPC分类号： H01L29/82
CPC分类号： H01L43/08 , B82Y25/00 , G11C11/16 , G11C11/1659 , H01F10/3254 , H01F10/3259 , H01F10/3263 , H01F10/3272 , H01F10/3286
摘要： A method and system for providing a magnetic substructure usable in a magnetic device, as well as a magnetic element and memory using the substructure are described. The magnetic substructure includes a plurality of ferromagnetic layers and a plurality of nonmagnetic layers. The plurality of ferromagnetic layers are interleaved with the plurality of nonmagnetic layers. The plurality of ferromagnetic layers are immiscible with and chemically stable with respect to the plurality of nonmagnetic layers. The plurality of ferromagnetic layers are substantially free of a magnetically dead layer-producing interaction with the plurality of nonmagnetic layers. Further, the plurality of nonmagnetic layers induce a perpendicular anisotropy in the plurality of ferromagnetic layers. The magnetic substructure is configured to be switchable between a plurality of stable magnetic states when a write current is passed through the magnetic substructure.
摘要翻译：描述了一种用于提供可用于磁性装置中的磁性子结构的方法和系统，以及使用该子结构的磁性元件和存储器。磁性子结构包括多个铁磁层和多个非磁性层。多个铁磁层与多个非磁性层交错。所述多个铁磁层相对于所述多个非磁性层不混溶并且化学稳定。多个铁磁层基本上没有与多个非磁性层产生磁性死层的相互作用。此外，多个非磁性层在多个铁磁层中引起垂直各向异性。磁性子结构被配置为当写入电流通过磁性子结构时在多个稳定磁状态之间切换。

34. 发明授权

US08411497B2 Method and system for providing a magnetic field aligned spin transfer torque random access memory 有权
标题翻译：用于提供磁场对准的自旋转移转矩随机存取存储器的方法和系统
公开(公告)号：US08411497B2
公开(公告)日：2013-04-02
申请号：US12774703
申请日：2010-05-05
申请人： Adrian E. Ong , Xueti Tang
发明人： Adrian E. Ong , Xueti Tang
IPC分类号： G11C11/14
CPC分类号： G11C11/1675 , G11C11/165 , G11C11/1655 , G11C11/1657 , G11C11/1659 , G11C11/1693 , G11C2207/002
摘要： A method and system for providing a magnetic memory are described. The method and system include providing magnetic storage cells, bit lines coupled with the magnetic storage cells, preset lines, and word lines coupled with the magnetic storage cells. Each magnetic storage cell includes magnetic element(s). The bit lines drive write current(s) through selected storage cell(s) of the magnetic storage cells to write to the selected storage cell(s). The preset lines drive preset current(s) in proximity to but not through the selected storage cell(s). The preset current(s) generate magnetic field(s) to orient the magnetic element(s) of the selected storage cell(s) in a direction. The word lines enable the selected storage cell(s) for writing. Either the bit lines reside between the preset lines and the storage cells or the preset lines reside between the storage cells and on a storage cell side of the bit lines.
摘要翻译：描述了一种用于提供磁存储器的方法和系统。该方法和系统包括提供磁存储单元，与磁存储单元耦合的位线，预设线和与磁存储单元耦合的字线。每个磁存储单元包括磁性元件。位线驱动通过磁存储单元的选定存储单元写入电流以写入所选择的存储单元。预设线驱动预设电流接近而不是通过选定的存储单元。预设电流产生磁场以使所选择的存储单元的磁性元件沿一个方向定向。字线允许所选存储单元进行写入。位线位于预设线和存储单元之间，或者预设线位于存储单元之间和位线的存储单元侧。

35. 发明申请

US20110031569A1 METHOD AND SYSTEM FOR PROVIDING MAGNETIC TUNNELING JUNCTION ELEMENTS HAVING IMPROVED PERFORMANCE THROUGH CAPPING LAYER INDUCED PERPENDICULAR ANISOTROPY AND MEMORIES USING SUCH MAGNETIC ELEMENTS 审中-公开
公开(公告)号：US20110031569A1
公开(公告)日：2011-02-10
申请号：US12776331
申请日：2010-05-07
申请人： Steven M. Watts , Zhitao Diao , Xueti Tang
发明人： Steven M. Watts , Zhitao Diao , Xueti Tang
IPC分类号： H01L29/82 , H01L21/00
CPC分类号： H01L27/224 , B82Y25/00 , B82Y40/00 , G01R33/098 , G11C11/16 , G11C11/161 , G11C11/1675 , G11C11/5607 , H01F10/3254 , H01F10/3286 , H01F41/307 , H01F41/34 , H01L27/228 , H01L43/08 , H01L43/12
摘要： A method and system for providing a magnetic element and a magnetic memory utilizing the magnetic element are described. The magnetic element is used in a magnetic device that includes a contact electrically coupled to the magnetic element. The method and system include providing pinned, nonmagnetic spacer, and free layers. The free layer has an out-of-plane demagnetization energy and a perpendicular magnetic anisotropy corresponding to a perpendicular anisotropy energy that is less than the out-of-plane demagnetization energy. The nonmagnetic spacer layer is between the pinned and free layers. The method and system also include providing a perpendicular capping layer adjoining the free layer and the contact. The perpendicular capping layer induces at least part of the perpendicular magnetic anisotropy in the free layer. The magnetic element is configured to allow the free layer to be switched between magnetic states when a write current is passed through the magnetic element.

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