专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20140008742A1 MAGNETIC TUNNELING JUNCTION SEED, CAPPING, AND SPACER LAYER MATERIALS 有权
标题翻译：磁性隧道接头，覆盖层和间隔层材料
公开(公告)号：US20140008742A1
公开(公告)日：2014-01-09
申请号：US13491568
申请日：2012-06-07
申请人： Eugene Youjun Chen , Xueti Tang
发明人： Eugene Youjun Chen , Xueti Tang
IPC分类号： H01L43/10
CPC分类号： H01L43/10 , B82Y25/00 , B82Y40/00 , G01R33/098 , G11C11/161 , H01F10/3254 , H01F10/3286 , H01F41/307 , H01F41/34 , H01L27/228 , H01L43/08
摘要： In one embodiment, a magnetic element for a semiconductor device includes a reference layer, a free layer, and a nonmagnetic spacer layer disposed between the reference layer and the free layer. The nonmagnetic spacer layer includes a binary, ternary, or multi-nary alloy oxide material. The binary, ternary, or multi-nary alloy oxide material includes MgO having one or more additional elements selected from the group consisting of: Ru, Al, Ta, Tb, Cu, V, Hf, Zr, W, Ag, Au, Fe, Co, Ni, Nb, Cr, Mo, and Rh.
摘要翻译：在一个实施例中，用于半导体器件的磁性元件包括设置在参考层和自由层之间的参考层，自由层和非磁性间隔层。非磁性间隔层包括二元，三元或多元合金氧化物材料。二元，三元或多元合金氧化物材料包括具有选自Ru，Al，Ta，Tb，Cu，V，Hf，Zr，W，Ag，Au，Fe中的一种或多种另外的元素的MgO ，Co，Ni，Nb，Cr，Mo和Rh。

2. 发明授权

US08779538B2 Magnetic tunneling junction seed, capping, and spacer layer materials 有权
标题翻译：磁隧道结种子，封盖和间隔层材料
公开(公告)号：US08779538B2
公开(公告)日：2014-07-15
申请号：US13491568
申请日：2012-06-07
申请人： Eugene Youjun Chen , Xueti Tang
发明人： Eugene Youjun Chen , Xueti Tang
IPC分类号： H01L27/22 , H01L29/04 , H01L47/00 , G11B5/33 , G11B5/127
CPC分类号： H01L43/10 , B82Y25/00 , B82Y40/00 , G01R33/098 , G11C11/161 , H01F10/3254 , H01F10/3286 , H01F41/307 , H01F41/34 , H01L27/228 , H01L43/08
摘要： In one embodiment, a magnetic element for a semiconductor device includes a reference layer, a free layer, and a nonmagnetic spacer layer disposed between the reference layer and the free layer. The nonmagnetic spacer layer includes a binary, ternary, or multi-nary alloy oxide material. The binary, ternary, or multi-nary alloy oxide material includes MgO having one or more additional elements selected from the group consisting of: Ru, Al, Ta, Tb, Cu, V, Hf, Zr, W, Ag, Au, Fe, Co, Ni, Nb, Cr, Mo, and Rh.
摘要翻译：在一个实施例中，用于半导体器件的磁性元件包括设置在参考层和自由层之间的参考层，自由层和非磁性间隔层。非磁性间隔层包括二元，三元或多元合金氧化物材料。二元，三元或多元合金氧化物材料包括具有选自Ru，Al，Ta，Tb，Cu，V，Hf，Zr，W，Ag，Au，Fe中的一种或多种另外的元素的MgO ，Co，Ni，Nb，Cr，Mo和Rh。

3. 发明授权

US08546896B2 Magnetic tunneling junction elements having magnetic substructures(s) with a perpendicular anisotropy and memories using such magnetic elements 有权
标题翻译：具有垂直各向异性的磁性子结构的磁隧道连接元件和使用这种磁性元件的存储器
公开(公告)号：US08546896B2
公开(公告)日：2013-10-01
申请号：US12941031
申请日：2010-11-06
申请人： Daniel Lottis , Eugene Youjun Chen , Xueti Tang , Steven M. Watts
发明人： Daniel Lottis , Eugene Youjun Chen , Xueti Tang , Steven M. Watts
IPC分类号： H01L29/82
CPC分类号： H01L43/08 , B82Y25/00 , G11C11/16 , G11C11/1659 , H01F10/3254 , H01F10/3259 , H01F10/3263 , H01F10/3272 , H01F10/3286
摘要： A method and system for providing a magnetic substructure usable in a magnetic device, as well as a magnetic element and memory using the substructure are described. The magnetic substructure includes a plurality of ferromagnetic layers and a plurality of nonmagnetic layers. The plurality of ferromagnetic layers are interleaved with the plurality of nonmagnetic layers. The plurality of ferromagnetic layers are immiscible with and chemically stable with respect to the plurality of nonmagnetic layers. The plurality of ferromagnetic layers are substantially free of a magnetically dead layer-producing interaction with the plurality of nonmagnetic layers. Further, the plurality of nonmagnetic layers induce a perpendicular anisotropy in the plurality of ferromagnetic layers. The magnetic substructure is configured to be switchable between a plurality of stable magnetic states when a write current is passed through the magnetic substructure.
摘要翻译：描述了一种用于提供可用于磁性装置中的磁性子结构的方法和系统，以及使用该子结构的磁性元件和存储器。磁性子结构包括多个铁磁层和多个非磁性层。多个铁磁层与多个非磁性层交错。所述多个铁磁层相对于所述多个非磁性层不混溶并且化学稳定。多个铁磁层基本上没有与多个非磁性层产生磁性死层的相互作用。此外，多个非磁性层在多个铁磁层中引起垂直各向异性。磁性子结构被配置为当写入电流通过磁性子结构时在多个稳定磁状态之间切换。

4. 发明申请

US20120012953A1 METHOD AND SYSTEM FOR PROVIDING MAGNETIC TUNNELING JUNCTION ELEMENTS HAVING LAMINATED FREE LAYERS AND MEMORIES USING SUCH MAGNETIC ELEMENTS 有权
标题翻译：使用这种磁性元件提供具有层压自由层和记忆体的磁性隧道结点元件的方法和系统
公开(公告)号：US20120012953A1
公开(公告)日：2012-01-19
申请号：US12941031
申请日：2010-11-06
申请人： Daniel Lottis , Eugene Youjun Chen , Xueti Tang , Steven M. Watts
发明人： Daniel Lottis , Eugene Youjun Chen , Xueti Tang , Steven M. Watts
IPC分类号： H01L29/82
CPC分类号： H01L43/08 , B82Y25/00 , G11C11/16 , G11C11/1659 , H01F10/3254 , H01F10/3259 , H01F10/3263 , H01F10/3272 , H01F10/3286
摘要： A method and system for providing a magnetic substructure usable in a magnetic device, as well as a magnetic element and memory using the substructure are described. The magnetic substructure includes a plurality of ferromagnetic layers and a plurality of nonmagnetic layers. The plurality of ferromagnetic layers are interleaved with the plurality of nonmagnetic layers. The plurality of ferromagnetic layers are immiscible with and chemically stable with respect to the plurality of nonmagnetic layers. The plurality of ferromagnetic layers are substantially free of a magnetically dead layer-producing interaction with the plurality of nonmagnetic layers. Further, the plurality of nonmagnetic layers induce a perpendicular anisotropy in the plurality of ferromagnetic layers. The magnetic substructure is configured to be switchable between a plurality of stable magnetic states when a write current is passed through the magnetic substructure.
摘要翻译：描述了一种用于提供可用于磁性装置中的磁性子结构的方法和系统，以及使用该子结构的磁性元件和存储器。磁性子结构包括多个铁磁层和多个非磁性层。多个铁磁层与多个非磁性层交错。所述多个铁磁层相对于所述多个非磁性层不混溶并且化学稳定。多个铁磁层基本上没有与多个非磁性层产生磁性死层的相互作用。此外，多个非磁性层在多个铁磁层中引起垂直各向异性。磁性子结构被配置为当写入电流通过磁性子结构时在多个稳定磁状态之间切换。

5. 发明授权

US08891290B2 Method and system for providing inverted dual magnetic tunneling junction elements 有权
标题翻译：提供反向双磁隧道连接元件的方法和系统
公开(公告)号：US08891290B2
公开(公告)日：2014-11-18
申请号：US13045528
申请日：2011-03-11
申请人： Xueti Tang , Jing Wu
发明人： Xueti Tang , Jing Wu
IPC分类号： G11C11/00 , G11C11/16 , H01L43/12
CPC分类号： G11C11/1675 , G11C11/16 , G11C11/161 , H01L43/12
摘要： A method and system for providing a magnetic junction residing on a substrate and usable in a magnetic device are described. The magnetic junction includes a first pinned layer, a first nonmagnetic spacer layer having a first thickness, a free layer, a second nonmagnetic spacer layer having a second thickness greater than the first thickness, and a second pinned layer. The first nonmagnetic spacer layer resides between the pinned layer and the free layer. The first pinned layer resides between the free layer and the substrate. The second nonmagnetic spacer layer is between the free layer and the second pinned layer. Further, the magnetic junction is configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction.
摘要翻译：描述了一种用于提供驻留在基板上并可用于磁性装置中的磁性结的方法和系统。磁结包括第一被钉扎层，具有第一厚度的第一非磁性间隔层，具有大于第一厚度的第二厚度的自由层，第二非磁性间隔层，以及第二钉扎层。第一非磁性间隔层位于被钉扎层和自由层之间。第一被钉扎层位于自由层和基底之间。第二非磁性间隔层位于自由层和第二被钉扎层之间。此外，磁结被配置为使得当写入电流通过磁结时，自由层可在多个稳定磁状态之间切换。

6. 发明授权

US08786039B2 Method and system for providing magnetic junctions having engineered perpendicular magnetic anisotropy 有权
标题翻译：用于提供具有工程化的垂直磁各向异性的磁结的方法和系统
公开(公告)号：US08786039B2
公开(公告)日：2014-07-22
申请号：US13723172
申请日：2012-12-20
申请人： Dmytro Apalkov , Chang-Man Park , Roman Chepulskyy , Alexey Vasilyevitch Khvalkovskiy , Xueti Tang
发明人： Dmytro Apalkov , Chang-Man Park , Roman Chepulskyy , Alexey Vasilyevitch Khvalkovskiy , Xueti Tang
IPC分类号： H01L29/82
CPC分类号： H01L43/02 , G11C11/161 , G11C11/1675 , H01L27/224 , H01L27/228 , H01L43/08 , H01L43/12
摘要： A method and system provide a magnetic junction usable in a magnetic device. The magnetic junction includes a reference layer, a nonmagnetic spacer layer, and a free layer. The nonmagnetic spacer layer is between the reference layer and the free layer. The free layer has an engineered perpendicular magnetic anisotropy. The engineered PMA includes at least one of an insulating insertion layer induced PMA, a stress induced PMA, PMA due to interface symmetry breaking, and a lattice mismatch induced PMA. The magnetic junction is configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction.
摘要翻译：一种方法和系统提供可用于磁性装置的磁结。磁结包括参考层，非磁性间隔层和自由层。非磁性间隔层位于参考层和自由层之间。自由层具有工程垂直磁各向异性。工程化的PMA包括绝缘插入层诱导的PMA，由于界面对称断裂引起的应力诱导的PMA，PMA和晶格失配诱导的PMA中的至少一种。磁结被配置为使得当写入电流通过磁结时，自由层可在多个稳定磁状态之间切换。

7. 发明授权

US08704319B2 Method and system for providing magnetic layers having insertion layers for use in spin transfer torque memories 有权
标题翻译：用于提供具有用于自旋转移转矩存储器中的插入层的磁性层的方法和系统
公开(公告)号：US08704319B2
公开(公告)日：2014-04-22
申请号：US13332328
申请日：2011-12-20
申请人： Xueti Tang , Vladimir Nikitin , Dmytro Apalkov , Kiseok Moon , Steven M. Watts
发明人： Xueti Tang , Vladimir Nikitin , Dmytro Apalkov , Kiseok Moon , Steven M. Watts
IPC分类号： H01L29/82
CPC分类号： H01L43/08 , G11C11/161 , G11C11/1675
摘要： A method and system provide a magnetic junction usable in a magnetic device. The magnetic junction includes a pinned layer, a nonmagnetic spacer layer, a free layer, and at least one damping reduction layer. The free layer has an intrinsic damping constant. The nonmagnetic spacer layer is between the pinned layer and the free layer. The at least one damping reduction layer is adjacent to at least a portion of the free layer and configured to reduce the intrinsic damping constant of the free layer. The magnetic junction is configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction.
摘要翻译：一种方法和系统提供可用于磁性装置的磁结。磁结包括钉扎层，非磁性间隔层，自由层和至少一个阻尼减小层。自由层具有固有阻尼常数。非磁性间隔层位于被钉扎层和自由层之间。所述至少一个阻尼减小层与所述自由层的至少一部分相邻并且被配置为减小所述自由层的固有阻尼常数。磁结被配置为使得当写入电流通过磁结时，自由层可在多个稳定磁状态之间切换。

8. 发明授权

US08698259B2 Method and system for providing a magnetic tunneling junction using thermally assisted switching 有权
标题翻译：使用热辅助切换提供磁隧道结的方法和系统
公开(公告)号：US08698259B2
公开(公告)日：2014-04-15
申请号：US13332282
申请日：2011-12-20
申请人： Mohamad Towfik Krounbi , Dmytro Apalkov , Xueti Tang , Vladimir Nikitin
发明人： Mohamad Towfik Krounbi , Dmytro Apalkov , Xueti Tang , Vladimir Nikitin
IPC分类号： H01L27/22
CPC分类号： H01L43/12 , G11C11/161 , G11C11/1675 , H01F10/3254 , H01F10/3286 , H01F10/3295 , H01L43/08 , H01L43/10
摘要： A magnetic junction is described. The magnetic junction includes a pinned layer, a nonmagnetic spacer layer, and a free layer. The magnetic junction may also include an additional nonmagnetic spacer layer and an additional pinned layer opposing the nonmagnetic spacer layer and the pinned layer. The nonmagnetic spacer layer is between the pinned layer and the free layer. The free layer is configured to be switchable using a write current passed through the magnetic junction. The free layer is also configured to be thermally stable in a quiescent state and have a reduced thermal stability due to heating from the write current being passed through the magnetic junction. In some aspects, the free layer includes at least one of a pinning layer(s) interleaved with ferromagnetic layer(s), two sets of interleaved ferromagnetic layers having different Curie temperatures, and a ferrimagnet having a saturation magnetization that increases with temperature between ferromagnetic layers.
摘要翻译：描述了磁连接。磁结包括钉扎层，非磁性间隔层和自由层。磁结还可以包括附加的非磁性间隔层和与非磁性间隔层和被钉扎层相对的附加钉扎层。非磁性间隔层位于被钉扎层和自由层之间。自由层被配置为可以使用通过磁结的写入电流来切换。自由层还被配置为在静止状态下是热稳定的，并且由于来自写入电流的加热通过磁结而具有降低的热稳定性。在一些方面，自由层包括与铁磁层交织的钉扎层，具有不同居里温度的两组交错铁磁层和具有随着温度升高的饱和磁化强度的铁磁体中的至少一个铁磁材料层。

9. 发明申请

US20130154035A1 METHOD AND SYSTEM FOR PROVIDING A MAGNETIC TUNNELING JUNCTION USING THERMALLY ASSISTED SWITCHING 有权
标题翻译：使用热辅助开关提供磁性隧道接头的方法和系统
公开(公告)号：US20130154035A1
公开(公告)日：2013-06-20
申请号：US13332282
申请日：2011-12-20
申请人： Mohamad Towfik Krounbi , Dmytro Apalkov , Xueti Tang , Vladimir Nikitin
发明人： Mohamad Towfik Krounbi , Dmytro Apalkov , Xueti Tang , Vladimir Nikitin
IPC分类号： H01L27/22 , G11B5/84 , B05D5/12 , G11B5/66 , G11B5/673
CPC分类号： H01L43/12 , G11C11/161 , G11C11/1675 , H01F10/3254 , H01F10/3286 , H01F10/3295 , H01L43/08 , H01L43/10
摘要： A magnetic junction is described. The magnetic junction includes a pinned layer, a nonmagnetic spacer layer, and a free layer. The magnetic junction may also include an additional nonmagnetic spacer layer and an additional pinned layer opposing the nonmagnetic spacer layer and the pinned layer. The nonmagnetic spacer layer is between the pinned layer and the free layer. The free layer is configured to be switchable using a write current passed through the magnetic junction. The free layer is also configured to be thermally stable in a quiescent state and have a reduced thermal stability due to heating from the write current being passed through the magnetic junction. In some aspects, the free layer includes at least one of a pinning layer(s) interleaved with ferromagnetic layer(s), two sets of interleaved ferromagnetic layers having different Curie temperatures, and a ferrimagnet having a saturation magnetization that increases with temperature between ferromagnetic layers.
摘要翻译：描述了磁连接。磁结包括钉扎层，非磁性间隔层和自由层。磁结还可以包括附加的非磁性间隔层和与非磁性间隔层和被钉扎层相对的附加钉扎层。非磁性间隔层位于被钉扎层和自由层之间。自由层被配置为可以使用通过磁结的写入电流来切换。自由层还被配置为在静止状态下是热稳定的，并且由于来自写入电流的加热通过磁结而具有降低的热稳定性。在一些方面，自由层包括与铁磁层交织的钉扎层，具有不同居里温度的两组交错铁磁层和具有随着温度升高的饱和磁化强度的铁磁体中的至少一个铁磁材料层。

10. 发明申请

US20110273928A1 METHOD AND SYSTEM FOR PROVIDING A MAGNETIC MAGNETIC FIELD ALIGNED SPIN TRANSFER TORQUE RANDOM ACCESS MEMORY 有权
标题翻译：用于提供磁性磁场对准的旋转转矩随机存取存储器的方法和系统
公开(公告)号：US20110273928A1
公开(公告)日：2011-11-10
申请号：US12774703
申请日：2010-05-05
申请人： Adrian E. Ong , Xueti Tang
发明人： Adrian E. Ong , Xueti Tang
IPC分类号： G11C11/14 , G11C7/00
CPC分类号： G11C11/1675 , G11C11/165 , G11C11/1655 , G11C11/1657 , G11C11/1659 , G11C11/1693 , G11C2207/002
摘要： A method and system for providing a magnetic memory are described. The method and system include providing magnetic storage cells, bit lines coupled with the magnetic storage cells, preset lines, and word lines coupled with the magnetic storage cells. Each magnetic storage cell includes magnetic element(s). The bit lines drive write current(s) through selected storage cell(s) of the magnetic storage cells to write to the selected storage cell(s). The preset lines drive preset current(s) in proximity to but not through the selected storage cell(s). The preset current(s) generate magnetic field(s) to orient the magnetic element(s) of the selected storage cell(s) in a direction. The word lines enable the selected storage cell(s) for writing. Either the bit lines reside between the preset lines and the storage cells or the preset lines reside between the storage cells and on a storage cell side of the bit lines.
摘要翻译：描述了一种用于提供磁存储器的方法和系统。该方法和系统包括提供磁存储单元，与磁存储单元耦合的位线，预设线和与磁存储单元耦合的字线。每个磁存储单元包括磁性元件。位线驱动通过磁存储单元的选定存储单元写入电流以写入所选择的存储单元。预设线驱动预设电流接近而不是通过选定的存储单元。预设电流产生磁场以使所选择的存储单元的磁性元件沿一个方向定向。字线允许所选存储单元进行写入。位线位于预设线和存储单元之间，或者预设线位于存储单元之间和位线的存储单元侧。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式