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31. 发明申请

US20090194502A1 AMORPHOUS NITRIDE RELEASE LAYERS FOR IMPRINT LITHOGRAPHY, AND METHOD OF USE 有权
标题翻译：用于印刷图的非晶氮化物释放层及其使用方法
公开(公告)号：US20090194502A1
公开(公告)日：2009-08-06
申请号：US12024985
申请日：2008-02-01
申请人： Frances A. Houle , Christopher V. Jahnes , Simone Raoux , Stephen M. Rossnagel
发明人： Frances A. Houle , Christopher V. Jahnes , Simone Raoux , Stephen M. Rossnagel
IPC分类号： B29C35/08 , B44C1/22 , B28B17/00
CPC分类号： B29C37/0067 , B29C35/0888 , B29C37/0053 , B29C43/003 , B29C43/021 , B29C2035/0827 , B29C2043/025 , B29C2059/023 , B82Y10/00 , B82Y40/00 , G03F7/0002 , Y10S977/887
摘要： A morphous inorganic nitrides are used as release layers on templates for nanoimprint lithography. Such a layer facilitates the release of a template from a cured, hardened composition into which the template has transferred a pattern, by reducing the adhesion energy between the release layer and the cured, hardened composition. The release layer may include one or more metallic or semiconductor elements such as Al, Mn, B, Co, Ti, Ta, W and Ge.
摘要翻译：用于纳米压印光刻的模板上使用形态无机氮化物作为剥离层。通过减少脱模层和固化的硬化组合物之间的粘附能，这种层有助于从固化的硬化组合物中释放模板，模板已转移到模板中。剥离层可以包括一种或多种金属或半导体元件，例如Al，Mn，B，Co，Ti，Ta，W和Ge。

32. 发明授权

US06917268B2 Lateral microelectromechanical system switch 有权
公开(公告)号：US06917268B2
公开(公告)日：2005-07-12
申请号：US10035840
申请日：2001-12-31
申请人： Hariklia Deligianni , Christopher V. Jahnes , Jennifer L. Lund , Lawrence E. Larson
发明人： Hariklia Deligianni , Christopher V. Jahnes , Jennifer L. Lund , Lawrence E. Larson
IPC分类号： H01H59/00 , H01H51/22
CPC分类号： H01H59/0009 , H01H2001/0068 , H01H2001/0078
摘要： A switch comprising a substrate, an elongated movable part, a pair of electrical contacts disposed at one side of said part, an actuation electrode disposed at the one side of the part and separated from the pair of electrical contacts, wherein the part, the contacts and the electrode are disposed on the substrate, wherein the elongated movable part is arranged and dimensioned such that the part is movable in a generally lateral direction toward the contacts; the movable part includes a central elongated member fixed to a head having an electrical contact disposed at the one side. One end of the movable part is attached to the substrate by means of various anchoring arrangements.

33. 发明授权

US06380003B1 Damascene anti-fuse with slot via 失效
标题翻译：大马士革防熔丝与插槽通孔
公开(公告)号：US06380003B1
公开(公告)日：2002-04-30
申请号：US09469374
申请日：1999-12-22
申请人： Christopher V. Jahnes , Chandrasekhar Narayan , Carl J. Radens
发明人： Christopher V. Jahnes , Chandrasekhar Narayan , Carl J. Radens
IPC分类号： H01L2182
CPC分类号： H01L23/5252 , H01L21/76816 , H01L2221/1057 , H01L2924/0002 , H01L2924/00
摘要： Interconnect structures comprising a substrate having a first level of electrically conductive features formed thereon; a patterned interlevel dielectric material formed on said substrate, wherein said patterned interlevel dielectric includes via spaces, wherein at least one of said via spaces is a slot via in which an anti-fuse material is formed on a portion thereof; and a second level of electrically conductive features formed in said spaces, whereby the anti-fuse material in the slot via provides a connection between the first and second levels of electrically conductive features and a method of fabricating the same.
摘要翻译：互连结构，包括其上形成有第一层导电特征的基底; 形成在所述衬底上的图案化层间电介质材料，其中所述图案化层间电介质包括通孔空间，其中所述通孔空间中的至少一个是其中在其一部分上形成反熔丝材料的槽通孔; 以及形成在所述空间中的第二级别的导电特征，由此所述槽通孔中的所述反熔丝材料提供所述第一和第二层导电特征之间的连接及其制造方法。

34. 发明授权

US5576579A Tasin oxygen diffusion barrier in multilayer structures 失效
标题翻译： Tasin氧扩散阻挡层在多层结构中的应用
公开(公告)号：US5576579A
公开(公告)日：1996-11-19
申请号：US371627
申请日：1995-01-12
申请人： Paul D. Agnello , Cyril Cabral, Jr. , Alfred Grill , Christopher V. Jahnes , Thomas J. Licata , Ronnen A. Roy
发明人： Paul D. Agnello , Cyril Cabral, Jr. , Alfred Grill , Christopher V. Jahnes , Thomas J. Licata , Ronnen A. Roy
IPC分类号： H01L21/28 , H01L21/46 , H01L21/8238 , H01L21/8242 , H01L21/8246 , H01L27/092 , H01L27/105 , H01L27/108 , H01L29/49 , H01L29/51 , H01L29/78 , H01L29/94 , H01L29/43
CPC分类号： H01L21/28185 , H01L21/28061 , H01L21/28202 , H01L21/823835 , H01L21/823842 , H01L29/4941 , H01L29/4958 , H01L29/513 , H01L29/518 , H01L29/94
摘要： A multilayer structure having an oxygen or dopant diffusion barrier fabricated of an electrically conductive, thermally stable material of refractory metal-silicon-nitrogen which is resistant to oxidation, prevents out-diffusion of dopants from silicon and has a wide process window wherein the refractory metal is selected from Ta, W, Nb, V, Ti, Zr, Hf, Cr and Mo.
摘要翻译：具有氧化或掺杂剂扩散阻挡层的多层结构，其由耐氧化的难熔金属 - 硅 - 氮的导电的，热稳定的材料制成，防止掺杂剂从硅的扩散扩散，并且具有宽的工艺窗口，其中难熔金属选自Ta，W，Nb，V，Ti，Zr，Hf，Cr和Mo。

35. 发明授权

US08973250B2 Methods of manufacturing a micro-electro-mechanical system (MEMS) structure 有权
标题翻译：制造微电子机械系统（MEMS）结构的方法
公开(公告)号：US08973250B2
公开(公告)日：2015-03-10
申请号：US13164323
申请日：2011-06-20
申请人： Christopher V. Jahnes , Anthony K. Stamper
发明人： Christopher V. Jahnes , Anthony K. Stamper
IPC分类号： H04R31/00 , B81B3/00 , B81C1/00 , B81B7/00 , H01L41/113 , H01L41/09
CPC分类号： B81B3/001 , B81B3/0021 , B81B3/0059 , B81B3/0072 , B81B7/0006 , B81B7/008 , B81B2201/016 , B81B2203/0163 , B81C1/00015 , B81C1/0015 , B81C1/00476 , G06F17/5045 , H01L41/094 , H01L41/1134 , H01L41/1138 , Y10T29/49002 , Y10T29/49005 , Y10T29/4908 , Y10T29/49121
摘要： Micro-Electro-Mechanical System (MEMS) structures, methods of manufacture and design structures are provided. The method of forming a MEMS structure includes forming a wiring layer on a substrate comprising actuator electrodes and a contact electrode. The method further includes forming a MEMS beam above the wiring layer. The method further includes forming at least one spring attached to at least one end of the MEMS beam. The method further includes forming an array of mini-bumps between the wiring layer and the MEMS beam.
摘要翻译：提供微机电系统（MEMS）结构，制造方法和设计结构。形成MEMS结构的方法包括在包括致动器电极和接触电极的基板上形成布线层。该方法还包括在布线层上方形成MEMS光束。该方法还包括形成至少一个连接到MEMS梁的至少一端的弹簧。该方法还包括在布线层和MEMS光束之间形成微小凸块的阵列。

36. 发明授权

US08029716B2 Amorphous nitride release layers for imprint lithography, and method of use 有权
标题翻译：用于压印光刻的无定形氮化物剥离层及其使用方法
公开(公告)号：US08029716B2
公开(公告)日：2011-10-04
申请号：US12024985
申请日：2008-02-01
申请人： Frances A Houle , Christopher V. Jahnes , Simone Raoux , Stephen M Rossnagel
发明人： Frances A Houle , Christopher V. Jahnes , Simone Raoux , Stephen M Rossnagel
IPC分类号： B28B11/08
CPC分类号： B29C37/0067 , B29C35/0888 , B29C37/0053 , B29C43/003 , B29C43/021 , B29C2035/0827 , B29C2043/025 , B29C2059/023 , B82Y10/00 , B82Y40/00 , G03F7/0002 , Y10S977/887
摘要： Amorphous inorganic nitrides are used as release layers on templates for nanoimprint lithography. Such a layer facilitates the release of a template from a cured, hardened composition into which the template has transferred a pattern, by reducing the adhesion energy between the release layer and the cured, hardened composition. The release layer may include one or more metallic or semiconductor elements such as Al, Mn, B, Co, Ti, Ta, W and Ge.
摘要翻译：无定形无机氮化物用作纳米压印光刻模板上的剥离层。通过减少脱模层和固化的硬化组合物之间的粘附能，这种层有助于从固化的硬化组合物中释放模板，模板已转移到模板中。剥离层可以包括一种或多种金属或半导体元件，例如Al，Mn，B，Co，Ti，Ta，W和Ge。

37. 发明申请

US20090263991A1 Negative Thermal Expansion System (NTES) Device for TCE Compensation in Elastomer Compsites and Conductive Elastomer Interconnects in Microelectronic Packaging 有权
标题翻译：负极热膨胀系统（NTES）装置用于微电子封装中弹性体组合和导电弹性体互连中的TCE补偿
公开(公告)号：US20090263991A1
公开(公告)日：2009-10-22
申请号：US12497903
申请日：2009-07-06
申请人： Gareth Geoffrey Hougham , S. Jay Chey , James Patrick Doyle , Xiao Hu Liu , Christopher V. Jahnes , Paul Alfred Lauro , Nancy C. LaBianca , Michael J. Rooks
发明人： Gareth Geoffrey Hougham , S. Jay Chey , James Patrick Doyle , Xiao Hu Liu , Christopher V. Jahnes , Paul Alfred Lauro , Nancy C. LaBianca , Michael J. Rooks
IPC分类号： H01R4/58 , B32B37/02
CPC分类号： B81B3/0035 , H01L2924/0002 , Y10T428/249986 , H01L2924/00
摘要： A method for fabricating a negative thermal expanding system device includes coating a wafer with a thermally decomposable polymer, patterning the decomposable polymer into repeating disk patterns, releasing the decomposable polymer from the wafer and forming a sheet of repeating patterned disks, suspending the sheet into a first solution with seeding compounds for electroless decomposition, removing the sheet from the first solution, suspending the sheet into a second solution to electrolessly deposit a first layer material onto the sheet, removing the sheet from the second solution, suspending the sheet into a third solution to deposit a second layer of material having a lower TCE value than the first layer of material, separating the patterned disks from one another, and annealing thermally the patterned disks to decompose the decomposable polymer and creating a cavity in place of the decomposable polymer.
摘要翻译：一种制造负热膨胀系统装置的方法包括用可热分解的聚合物涂覆晶片，将可分解的聚合物图案化成重复的圆盘图案，将可分解的聚合物从晶片上释放出来并形成一张重复图案的圆盘，将薄片悬挂在用于无电解分解的接种化合物的第一溶液，从第一溶液中除去片材，将片材悬浮在第二溶液中以将第一层材料无电沉积到片材上，从第二溶液中除去片材，将片材悬浮在第三溶液中沉积具有比第一层材料低的TCE值的第二层材料，将图案化的盘彼此分离，并对图案化的盘进行热退火以分解可分解聚合物并产生空腔以代替可分解的聚合物。

38. 发明申请

US20080160679A1 Apparatus and Methods for Encapsulating Microelectromechanical (MEM) Devices on a Wafer Scale 有权
标题翻译：用于在晶片尺寸上封装微机电（MEM）器件的装置和方法
公开(公告)号：US20080160679A1
公开(公告)日：2008-07-03
申请号：US12049836
申请日：2008-03-17
申请人： Evan G. Colgan , Bruce K. Furman , Christopher V. Jahnes
发明人： Evan G. Colgan , Bruce K. Furman , Christopher V. Jahnes
IPC分类号： H01L21/00
CPC分类号： B81C1/00293 , B81C2203/0145
摘要： Apparatus and methods are provided for enabling wafer-scale encapsulation of microelectromechanical (MEM) devices (e.g., resonators, filters) to protect the MEMs from the ambient and to provide either a controlled ambient or a reduced pressure. In particular, methods for wafer-scale encapsulation of MEM devices are provided, which enable encapsulation of MEM devices under desired ambient conditions that are not determined by the deposition conditions of a sealing process in which MEM release via holes are sealed or pinched-off, and which prevent sealing material from being inadvertently deposited on the MEM device during the sealing process.
摘要翻译：提供了设备和方法，用于实现微机电（MEM）装置（例如，谐振器，滤波器）的晶片级封装，以保护MEM免受环境影响，并提供受控的环境或减压。特别地，提供了用于MEM器件的晶片级封装的方法，其能够在期望的环境条件下封装MEM器件，所述环境条件不是通过其中MEM释放通孔被密封或夹断的密封过程的沉积条件来确定的，并且其在密封过程中防止密封材料被无意中沉积在MEM装置上。

39. 发明授权

US07344907B2 Apparatus and methods for encapsulating microelectromechanical (MEM) devices on a wafer scale 有权
标题翻译：用于将微机电（MEM）器件封装在晶片上的装置和方法
公开(公告)号：US07344907B2
公开(公告)日：2008-03-18
申请号：US10993548
申请日：2004-11-19
申请人： Evan G. Colgan , Bruce K. Furman , Christopher V. Jahnes
发明人： Evan G. Colgan , Bruce K. Furman , Christopher V. Jahnes
IPC分类号： H01L21/00
CPC分类号： B81C1/00293 , B81C2203/0145
摘要： Apparatus and methods are provided for enabling wafer-scale encapsulation of microelectromechanical (MEM) devices (e.g., resonators, filters) to protect the MEMs from the ambient and to provide either a controlled ambient or a reduced pressure. In particular, methods for wafer-scale encapsulation of MEM devices are provided, which enable encapsulation of MEM devices under desired ambient conditions that are not determined by the deposition conditions of a sealing process in which MEM release via holes are sealed or pinched-off, and which prevent sealing material from being inadvertently deposited on the MEM device during the sealing process.
摘要翻译：提供了设备和方法，用于实现微机电（MEM）装置（例如，谐振器，滤波器）的晶片级封装，以保护MEM免受环境影响，并提供受控的环境或减压。特别地，提供了用于MEM器件的晶片级封装的方法，其能够在期望的环境条件下封装MEM器件，所述环境条件不是通过其中MEM释放通孔被密封或夹断的密封过程的沉积条件来确定的，并且其在密封过程中防止密封材料被无意中沉积在MEM装置上。

40. 发明授权

US06720249B1 Protective hardmask for producing interconnect structures 失效
标题翻译：用于生产互连结构的保护硬掩模
公开(公告)号：US06720249B1
公开(公告)日：2004-04-13
申请号：US09550943
申请日：2000-04-17
申请人： Timothy J. Dalton , Christopher V. Jahnes , Joyce C. Liu , Sampath Purushothaman
发明人： Timothy J. Dalton , Christopher V. Jahnes , Joyce C. Liu , Sampath Purushothaman
IPC分类号： H01L214763
CPC分类号： H01L21/76835 , H01L21/76802 , H01L21/76811 , H01L21/76813 , H01L21/76816 , H01L21/76829 , H01L23/5222 , H01L23/5329 , H01L2924/0002 , H01L2924/00
摘要： The present invention provides a permanent protective hardmask which protects the dielectric properties of a main dielectric layer having a desirably low dielectric constant in a semiconductor device from undesirable increases in the dielectric constant, undesirable increases in current leakage, and low device yield from surface scratching during subsequent processing steps. The protective hardmask further includes a single layer or dual layer sacrificial hardmask particularly useful when interconnect structures such as via openings and/or lines are formed in the low dielectric material during the course of making the final product. The sacrificial hardmask layers and the permanent hardmask layer may be formed in a single step from a same precursor wherein process conditions are altered to provide films of differing dielectric constants. Most preferably, a dual damascene structure has a tri-layer hardmask comprising silicon carbide BLoK™, PECVD silicon nitride, and PECVD silicon dioxide, respectively, formed over a bulk low dielectric constant interlevel dielectric prior to forming the interconnect structures in the interlevel dielectric.
摘要翻译：本发明提供一种永久性保护性硬掩模，其保护半导体器件中具有期望的低介电常数的主电介质层的介电性能，不需要介电常数的增加，不期望的电流泄漏增加，以及在表面划伤期间的低的器件产量后续处理步骤。保护性硬掩模还包括单层或双层牺牲硬掩模，在制造最终产品的过程中，在低电介质材料中形成诸如通孔开口和/或线之间的互连结构时尤其有用。牺牲硬掩模层和永久硬掩模层可以从相同的前体在单个步骤中形成，其中改变工艺条件以提供不同介电常数的膜。最优选地，双镶嵌结构具有三层硬掩模，其在形成层间的互连结构之前分别形成在体低介电常数层间电介质上的碳化硅BLoK TM，PECVD氮化硅和PECVD二氧化硅电介质。

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