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31. 发明申请

US20060085772A1 Model-based pattern characterization to generate rules for rule-model-based hybrid optical proximity correction 失效
公开(公告)号：US20060085772A1
公开(公告)日：2006-04-20
申请号：US11221528
申请日：2005-09-08
申请人： Youping Zhang
发明人： Youping Zhang
IPC分类号： G06F17/50
CPC分类号： G03F7/705 , G03F1/36 , G03F7/70441
摘要： A system and method are provided for analyzing layout patterns via simulation using a lithography model to characterize the patterns and generate rules to be used in rule-based optical proximity correction (OPC). The system and method analyze a series of layout patterns conforming to a set of design rules by simulation using a lithography model to obtain a partition of the pattern spaces into one portion that requires only rule-based OPC and another portion that requires model-based OPC. A corresponding hybrid OPC system and method are also introduced that utilize the generated rules to correct an integrated circuit (IC) design layout which reduces the OPC output complexity and improves turnaround time.

32. 发明授权

US06522991B2 Suppressing oscillations in processes such as gas turbine combustion 有权
公开(公告)号：US06522991B2
公开(公告)日：2003-02-18
申请号：US09849067
申请日：2001-05-04
申请人： Andrzej Banaszuk , Youping Zhang , Clas A. Jacobson , Miroslav Krstic
发明人： Andrzej Banaszuk , Youping Zhang , Clas A. Jacobson , Miroslav Krstic
IPC分类号： G06F1710
CPC分类号： F23N5/16 , F05B2260/96 , F23N2023/44 , F23R3/00 , F23R2900/00013 , F23R2900/00014
摘要： A frequency tracking extended Kalman filter (35), responsive to combustor pressure (30), produces in-phase (36) and quadrature (37) components of the estimated magnitude of the undesirable combustor pressure variations, for which compensation is to be achieved; a bidirectional minimum-seeking algorithm (41) is used to select the phase (42) of a process adjusting input variable (28), such as fuel that is in addition to the main fuel flow used for power control purposes.

33. 发明授权

US08739082B2 Method of pattern selection for source and mask optimization 有权
标题翻译：源和掩码优化的图案选择方法
公开(公告)号：US08739082B2
公开(公告)日：2014-05-27
申请号：US13505286
申请日：2010-10-26
申请人： Hua-Yu Liu , Luoqi Chen , Hong Chen , Zhi-Pan Li , Jun Ye , Min-Chun Tsai , Youping Zhang , Yen-Wen Lu , Jiangwei Li
发明人： Hua-Yu Liu , Luoqi Chen , Hong Chen , Zhi-Pan Li , Jun Ye , Min-Chun Tsai , Youping Zhang , Yen-Wen Lu , Jiangwei Li
IPC分类号： G06F17/50
CPC分类号： G06F17/5081 , G03F1/144 , G03F1/36 , G03F7/70125 , G03F7/70425 , G03F7/70441 , G03F7/705 , G03F7/70666 , G06F17/50 , G06F17/5009
摘要： The present invention relates to a method of selecting a subset of patterns from a design, to a method of performing source and mask optimization, and to a computer program product for performing the method of selecting a subset of patterns from a design. According to certain aspects, the present invention enables coverage of the full design while lowering the computation cost by intelligently selecting a subset of patterns from a design in which the design or a modification of the design is configured to be imaged onto a substrate via a lithographic process. The method of selecting the subset of patterns from a design includes identifying a set of patterns from the design related to the predefined representation of the design. By selecting the subset of patterns according to the method, the selected subset of patterns constitutes a similar predefined representation of the design as the set of patterns.
摘要翻译：本发明涉及从设计中选择模式子集的方法，以及执行源和掩码优化的方法以及用于执行从设计中选择模式子集的方法的计算机程序产品。根据某些方面，本发明能够覆盖整个设计，同时降低计算成本，通过智能地从设计中选择图案子集，其中设计的设计或修改被配置为经由光刻成像到衬底上处理。从设计中选择图案子集的方法包括从与设计的预定义表示相关的设计中识别一组图案。通过根据该方法选择模式子集，所选择的模式子集构成与模式集合相似的设计表示。

34. 发明授权

US07908572B2 Creating and applying variable bias rules in rule-based optical proximity correction for reduced complexity 有权
标题翻译：在基于规则的光学邻近校正中创建和应用可变偏差规则，以降低复杂度
公开(公告)号：US07908572B2
公开(公告)日：2011-03-15
申请号：US11221533
申请日：2005-09-08
申请人： Youping Zhang
发明人： Youping Zhang
IPC分类号： G06F17/50
CPC分类号： G06F17/5081 , G03F1/36 , G03F7/70441 , G03F7/705 , G06F2217/12 , Y02P90/265
摘要： An optical proximity correction (OPC) based integrated circuit design system and method introduce a variable rule in which rules are specified in terms of multiple correction actions that yield acceptable results. This category of rules provides more degrees of freedom in actual application so that the rule-based OPC tool can intelligently select the proper valid rule that minimizes the OPC complexity or meets other objectives.
摘要翻译：基于光学邻近校正（OPC）的集成电路设计系统和方法引入可变规则，其中规则是根据产生可接受结果的多个校正动作来指定的。这种类型的规则在实际应用中提供了更多的自由度，因此基于规则的OPC工具可以智能地选择最小化OPC复杂性或满足其他目标的正确有效规则。

35. 发明授权

US07382912B2 Method and apparatus for performing target-image-based optical proximity correction 有权
标题翻译：用于执行基于目标图像的光学邻近校正的方法和装置
公开(公告)号：US07382912B2
公开(公告)日：2008-06-03
申请号：US11325211
申请日：2006-01-03
申请人： Youping Zhang
发明人： Youping Zhang
IPC分类号： G03F9/00 , G06F17/50 , G06K9/00
CPC分类号： G03F9/00 , G03F1/30 , G03F1/36 , G03F1/70
摘要： A system that performs target-image-based optical proximity correction on masks that are used to generate an integrated circuit is presented. The system operates by first receiving a plurality of masks that are used to expose features on the integrated circuit. Next, the system computes a target image for a target feature defined by the plurality of masks, wherein mask features from different masks define the target image. The system dissects the feature into a plurality of segments, wherein dissecting the mask feature involves using dissection parameters associated with geometric characteristics of the target image, instead of using dissection parameters associated with geometric characteristics of the mask feature. The system then performs an optical proximity correction (OPC) operation on the plurality of masks, wherein the OPC operation uses parameters associated with geometric characteristics of the target image to perform optical proximity correction on the mask features that define the target image.
摘要翻译：提出了一种在用于生成集成电路的掩模上执行基于目标图像的光学邻近校正的系统。该系统首先接收用于暴露集成电路上的特征的多个掩模来操作。接下来，系统计算由多个掩模定义的目标特征的目标图像，其中来自不同掩模的掩模特征定义目标图像。该系统将特征解剖成多个段，其中解剖掩模特征涉及使用与目标图像的几何特征相关联的解剖参数，而不是使用与掩模特征的几何特征相关联的解剖参数。然后，系统对多个掩模执行光学邻近校正（OPC）操作，其中OPC操作使用与目标图像的几何特征相关联的参数来对限定目标图像的掩模特征进行光学邻近校正。

36. 发明申请

US20070113216A1 Photolithographic mask correction 有权
标题翻译：光刻掩模校正
公开(公告)号：US20070113216A1
公开(公告)日：2007-05-17
申请号：US11273685
申请日：2005-11-14
申请人： Youping Zhang
发明人： Youping Zhang
IPC分类号： G06F17/50
CPC分类号： G06F17/5068
摘要： An exemplary method for modifying at least part of an integrated circuit layout comprises obtaining an integrated circuit device layout, the integrated circuit device being designed using a library of cells, obtaining a modified library of cells, and replacing at least one cell in the integrated circuit device layout with a corresponding modified cell of the modified library to obtain a modified integrated circuit device layout. The modified library includes modified cells corresponding to cells in the library and candidate areas of each modified cell indicating portions of the cell for further processing. At least some of the modified cells have been modified to at least partially compensate for a manufacturing effect.
摘要翻译：用于修改集成电路布局的至少一部分的示例性方法包括获得集成电路器件布局，使用单元库设计的集成电路器件，获得修改的单元库，以及替换集成电路中的至少一个单元设备布局与修改库的相应修改单元获得修改后的集成电路设备布局。修饰的文库包括对应于文库中的细胞的修饰细胞和每个修饰的细胞的候选区域，指示细胞的部分用于进一步处理。修饰的细胞中的至少一些已被修饰以至少部分补偿制造效果。

37. 发明申请

US20060115753A1 Method and apparatus for performing target-image-based optical proximity correction 有权
公开(公告)号：US20060115753A1
公开(公告)日：2006-06-01
申请号：US11325211
申请日：2006-01-03
申请人： Youping Zhang
发明人： Youping Zhang
IPC分类号： G03F1/00 , G06F17/50 , G03C5/00
CPC分类号： G03F9/00 , G03F1/30 , G03F1/36 , G03F1/70
摘要： A system that performs target-image-based optical proximity correction on masks that are used to generate an integrated circuit is presented. The system operates by first receiving a plurality of masks that are used to expose features on the integrated circuit. Next, the system computes a target image for a target feature defined by the plurality of masks, wherein mask features from different masks define the target image. The system dissects the feature into a plurality of segments, wherein dissecting the mask feature involves using dissection parameters associated with geometric characteristics of the target image, instead of using dissection parameters associated with geometric characteristics of the mask feature. The system then performs an optical proximity correction (OPC) operation on the plurality of masks, wherein the OPC operation uses parameters associated with geometric characteristics of the target image to perform optical proximity correction on the mask features that define the target image.

38. 发明申请

US20060085773A1 Creating and applying variable bias rules in rule-based optical proximity correction for reduced complexity 有权
标题翻译：在基于规则的光学邻近校正中创建和应用可变偏差规则，以降低复杂度
公开(公告)号：US20060085773A1
公开(公告)日：2006-04-20
申请号：US11221533
申请日：2005-09-08
申请人： Youping Zhang
发明人： Youping Zhang
IPC分类号： G06F17/50
CPC分类号： G06F17/5081 , G03F1/36 , G03F7/70441 , G03F7/705 , G06F2217/12 , Y02P90/265
摘要： An optical proximity correction (OPC) based integrated circuit design system and method introduce a variable rule in which rules are specified in terms of multiple correction actions that yield acceptable results. This category of rules provides more degrees of freedom in actual application so that the rule-based OPC tool can intelligently select the proper valid rule that minimizes the OPC complexity or meets other objectives.
摘要翻译：基于光学邻近校正（OPC）的集成电路设计系统和方法引入可变规则，其中规则是根据产生可接受结果的多个校正动作来指定的。这种类型的规则在实际应用中提供了更多的自由度，因此基于规则的OPC工具可以智能地选择最小化OPC复杂性或满足其他目标的正确有效规则。

39. 发明申请

US20050188338A1 System for designing integrated circuits with enhanced manufacturability 失效
标题翻译：具有增强可制造性的集成电路设计系统
公开(公告)号：US20050188338A1
公开(公告)日：2005-08-25
申请号：US11060927
申请日：2005-02-18
申请人： Armen Kroyan , Youping Zhang , Etsuya Morita , Adrianus Ligtenberg
发明人： Armen Kroyan , Youping Zhang , Etsuya Morita , Adrianus Ligtenberg
IPC分类号： G06F17/50
CPC分类号： G06F17/5068 , G06F2217/12 , Y02P90/265
摘要： A system and method for integrated circuit design are disclosed to enhance manufacturability of circuit layouts through generation of hierarchical design rules which capture localized layout requirements. In contrast to conventional techniques which apply global design rules, the disclosed IC design system and method partition the original design layout into a desired level of granularity based on specified layout and integrated circuit properties. At that localized level, the design rules are adjusted appropriately to capture the critical aspects from a manufacturability standpoint. These adjusted design rules are then used to perform localized layout manipulation and mask data conversion.
摘要翻译：公开了用于集成电路设计的系统和方法，以通过生成捕获局部布局要求的分级设计规则来提高电路布局的可制造性。与采用全球设计规则的常规技术相比，本文所公开的IC设计系统和方法基于指定的布局和集成电路特性将原始设计布局分割成所需的粒度级别。在本地化的层面上，适当地调整设计规则以从可制造性的角度捕获关键方面。然后将这些调整后的设计规则用于执行本地化的布局操作和掩码数据转换。

40. 发明授权

US08918742B2 Methods and systems for pattern design with tailored response to wavefront aberration 有权
标题翻译：用于图案设计的方法和系统，具有针对波前像差的定制响应
公开(公告)号：US08918742B2
公开(公告)日：2014-12-23
申请号：US13542625
申请日：2012-07-05
申请人： Hanying Feng , Yu Cao , Jun Ye , Youping Zhang
发明人： Hanying Feng , Yu Cao , Jun Ye , Youping Zhang
IPC分类号： G06F17/50 , G03B27/54 , G03F7/20
CPC分类号： G03F7/706 , G03F7/70683
摘要： The present invention relates to methods and systems for designing gauge patterns that are extremely sensitive to parameter variation, and thus robust against random and repetitive measurement errors in calibration of a lithographic process utilized to image a target design having a plurality of features. The method may include identifying most sensitive line width/pitch combination with optimal assist feature placement which leads to most sensitive CD (or other lithography response parameter) changes against lithography process parameter variations, such as wavefront aberration parameter variation. The method may also include designing gauges which have more than one test patterns, such that a combined response of the gauge can be tailored to generate a certain response to wavefront-related or other lithographic process parameters. The sensitivity against parameter variation leads to robust performance against random measurement error and/or any other measurement error.
摘要翻译：本发明涉及用于设计对参数变化非常敏感的规格图案的方法和系统，因此对于用于对具有多个特征进行成像的目标设计的光刻工艺的校准中的随机和重复的测量误差是鲁棒的。该方法可以包括以最佳辅助特征放置来识别最敏感的线宽/间距组合，其导致针对光刻过程参数变化（例如波前像差参数变化）的最敏感的CD（或其他光刻响应参数）变化。该方法还可以包括设计具有多于一个测试图案的计量器，使得量规的组合响应可以被调整以产生对波前相关或其它光刻工艺参数的特定响应。对参数变化的敏感性导致对随机测量误差和/或任何其他测量误差的鲁棒性能。

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