专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

31. 发明申请

US20060115916A1 Method of manufacturing silicon optoelectronic device, silicon optoelectronic device manufacture by the method, and image input and/or output apparatus using the silicon optoelectronic device 有权
标题翻译：制造硅光电子器件的方法，通过该方法制造的硅光电子器件，以及使用硅光电子器件的图像输入和/或输出装置
公开(公告)号：US20060115916A1
公开(公告)日：2006-06-01
申请号：US11335503
申请日：2006-01-20
申请人： Eun-kyung Lee , Byoung-iyong Choi , Pil-soo Ahn , Jun-young Kim , Young-gu Jin
发明人： Eun-kyung Lee , Byoung-iyong Choi , Pil-soo Ahn , Jun-young Kim , Young-gu Jin
IPC分类号： H01L21/00
CPC分类号： H01L33/34 , B82Y10/00 , B82Y20/00 , B82Y30/00 , G01Q80/00 , H01L27/14601 , H01L27/14621 , H01L27/14645 , H01L27/14683 , H01L27/156 , H01L31/02363 , H01L31/028 , H01L31/035281 , H01L31/1804 , H01L33/0054 , H01L33/24 , Y02E10/547 , Y02P70/521
摘要： A method of manufacturing a silicon optoelectronic device, a silicon optoelectronic device manufactured by the method, and an image input and/or output apparatus including the silicon optoelectronic device are provided. The method includes preparing an n- or p-type silicon-based substrate, forming a microdefect pattern along a surface of the substrate by etching, forming a control film with an opening on the microdefect pattern, and forming a doping region on the surface of the substrate having the microdefect pattern in such a way that a predetermined dopant of the opposite type to the substrate is injected onto the substrate through the opening of the control film to be doped to a depth so that a photoelectric conversion effect leading to light emission and/or reception by quantum confinement effect in the p-n junction occurs. The silicon optoelectronic device has superior light-emitting efficiency, can be used as at least one of a light-emitting device and a light-receiving device, and has high wavelength selectivity. In addition, the silicon optoelectronic device panel having the two-dimensional array of the silicon optoelectronic devices can be applied in the image input and/or output apparatus capable of directly displaying an image and/or inputting optical information in a screen.
摘要翻译：提供一种制造硅光电子器件的方法，通过该方法制造的硅光电子器件，以及包括硅光电子器件的图像输入和/或输出设备。该方法包括制备n型或p型硅基衬底，通过蚀刻形成沿衬底表面的微观图案，在微缺陷图案上形成具有开口的控制膜，并在具有微观图案的衬底，使得通过控制膜的开口将与衬底相反类型的预定掺杂剂注入到衬底上以被掺杂到深度，使得导致发光的光电转换效应和 /或在pn结中发生量子限制效应的接收。硅光电子器件具有优异的发光效率，可以用作发光器件和光接收器件中的至少一种，并且具有高波长选择性。此外，具有硅光电子器件的二维阵列的硅光电子器件面板可以应用于能够直接在屏幕中显示图像和/或输入光学信息的图像输入和/或输出设备。

32. 发明授权

US5648979A Assembly of VCSEL light source and VCSEL optical detector 失效
标题翻译： VCSEL光源和VCSEL光检测器的组装
公开(公告)号：US5648979A
公开(公告)日：1997-07-15
申请号：US581259
申请日：1995-12-29
申请人： Jong-kuk Mun , Yong-hee Lee , Eun-kyung Lee , Kyung-ho Ha
发明人： Jong-kuk Mun , Yong-hee Lee , Eun-kyung Lee , Kyung-ho Ha
IPC分类号： H01L33/00 , H01S5/026 , H01S5/183 , H01S3/19 , H01L27/15 , H01S3/08
CPC分类号： H01S5/0264 , H01S5/1078 , H01S5/183
摘要： There is provided an assembly of a light source and an optical detector, each using a vertical cavity surface emitting laser (VCSEL). To control light emission of the VCSEL light source, spontaneous light emitted laterally therefrom is converted into an electrical signal. The optical detector for monitoring light is provided around the light source to supply the feedback electrical signal. The inner surface facing the light source of the optical detector is circular to absorb the spontaneous light and the outer surface thereof is polygonal having a plurality of peaks and valleys. Therefore, most of spontaneous light absorbed in the optical detector is reflected within, not penetrating the outer surface thereof, thereby extending the path of the spontaneous light in the optical detector and increasing the light intensity converted into an electrical signal.
摘要翻译：提供了一种光源和光学检测器的组件，每个使用垂直腔表面发射激光器（VCSEL）。为了控制VCSEL光源的发光，将其侧向发射的自发光转换成电信号。在光源周围设置用于监视光的光检测器，以提供反馈电信号。面向光学检测器的光源的内表面是圆形的以吸收自发光，并且其外表面是具有多个峰和谷的多边形。因此，在光检测器中吸收的大部分自发光被反射到内部，不会穿透其外表面，从而延长光学检测器中自发光的路径，并增加转换成电信号的光强度。

33. 外观设计

USD596217S1 Digital camera 有权
公开(公告)号：USD596217S1
公开(公告)日：2009-07-14
申请号：US29310149
申请日：2008-07-29
申请人： Tae-hwan Kim , Eun-kyung Lee
设计人： Tae-hwan Kim , Eun-kyung Lee

34. 外观设计

USD596214S1 Digital camera 有权
公开(公告)号：USD596214S1
公开(公告)日：2009-07-14
申请号：US29310174
申请日：2008-07-30
申请人： Tae-hwan Kim , Eun-kyung Lee
设计人： Tae-hwan Kim , Eun-kyung Lee

35. 外观设计

USD571844S1 Digital camera 有权
公开(公告)号：USD571844S1
公开(公告)日：2008-06-24
申请号：US29285668
申请日：2007-04-05
申请人： Eun-kyung Lee , Seung-seup Yoo , Sung-hwa Chang
设计人： Eun-kyung Lee , Seung-seup Yoo , Sung-hwa Chang

36. 发明授权

US07276298B2 Substance for intermediate layer of organic electroluminescent device and organic electroluminescent device using the same 有权
标题翻译：有机电致发光器件的中间层的物质和使用其的有机电致发光器件
公开(公告)号：US07276298B2
公开(公告)日：2007-10-02
申请号：US10998821
申请日：2004-11-30
申请人： Soo-hyoung Lee , Yi-yeol Lyu , Eun-kyung Lee , Tae-yong Noh
发明人： Soo-hyoung Lee , Yi-yeol Lyu , Eun-kyung Lee , Tae-yong Noh
IPC分类号： H01L51/54 , C09K11/06 , H05B33/12
CPC分类号： H01L51/0035 , H01L51/0037 , H01L51/0039 , H01L51/0059 , H01L51/006 , H01L51/5096 , H01L2251/308 , Y10S428/917
摘要： The present invention is related to an intermediate layer of an organic electroluminescent device comprising an amine derivative substance which may further comprise a functional group capable of forming crosslinks. In particular, the substance may have excellent solubility and can be easily formed into a thin film. Specifically, the thin film may be stable in the solvent and can be easily formed to various thicknesses. Furthermore, the band gaps and LUMO/HOMO values may be easily controlled depending of the characteristics of the hole transporting material, so that an intermediate layer with the desired characteristics may be formed. Accordingly, the introduction of an intermediate layer manufactured using the substance of the present invention as the intermediate layer may result in an organic electroluminescent device having high efficiency and a longer lifespan.
摘要翻译：本发明涉及包含胺衍生物物质的有机电致发光器件的中间层，其可以进一步包含能够形成交联的官能团。特别地，该物质可以具有优异的溶解性并且可以容易地形成为薄膜。具体地说，薄膜在溶剂中可以是稳定的，并且可以容易地形成为各种厚度。此外，可以根据空穴传输材料的特性容易地控制带隙和LUMO / HOMO值，从而可以形成具有期望特性的中间层。因此，引入使用本发明的物质制造的中间层作为中间层可以产生具有高效率和更长寿命的有机电致发光器件。

37. 发明申请

US20060269745A1 Nano wires and method of manufacturing the same 审中-公开
标题翻译：纳米线和制造方法相同
公开(公告)号：US20060269745A1
公开(公告)日：2006-11-30
申请号：US11362046
申请日：2006-02-27
申请人： Eun-kyung Lee , Byoung-Iyong Choi , Sang-jun Choi , Hoon Kim
发明人： Eun-kyung Lee , Byoung-Iyong Choi , Sang-jun Choi , Hoon Kim
IPC分类号： D02G3/00
CPC分类号： H01L21/0273 , H01L21/26533 , H01L21/31654 , H01L21/76243 , H01L33/20 , Y10T428/2913
摘要： The present invention provides a method of manufacturing nano wires and nano wires having a p-n junction structure. The method includes: stacking a mask layer on a substrate; patterning the mask layer into stripes; and performing an oxygen ion injection process on the substrate and the mask layer to form oxygen ion injection regions in the substrate, thereby forming nano wire regions embedded in the substrate and separated from the substrate by the oxygen ion injection regions.
摘要翻译：本发明提供一种制造具有p-n结结构的纳米线和纳米线的方法。该方法包括：在基板上层叠掩模层; 将掩模层图案化成条纹; 在基板和掩模层上进行氧离子注入处理，在基板上形成氧离子注入区域，由此形成嵌入到基板内的纳米线区域，并通过氧离子注入区域与基板分离。

38. 发明申请

US20060182966A1 Silicon nano wire having a silicon-nitride shell and method of manufacturing the same 审中-公开
标题翻译：具有氮化硅壳的硅纳米线及其制造方法
公开(公告)号：US20060182966A1
公开(公告)日：2006-08-17
申请号：US11349250
申请日：2006-02-08
申请人： Eun-kyung Lee , Byoung-Iyong Choi
发明人： Eun-kyung Lee , Byoung-Iyong Choi
IPC分类号： D02G3/00
CPC分类号： C30B29/06 , B82Y30/00 , C30B11/12 , C30B25/00 , C30B29/60 , Y10T428/2933
摘要： Silicon nano wires having silicon nitride shells and a method of manufacturing the same are provided. Each silicon nano wire has a core portion formed of silicon, and a shell portion formed of silicon nitride surrounding the core portion. The method includes removing silicon oxide formed on the shell of the silicon nano wire and forming a silicon nitride shell.
摘要翻译：提供了具有氮化硅壳的硅纳米线及其制造方法。每个硅纳米线具有由硅形成的芯部分和由围绕芯部分的氮化硅形成的壳部分。该方法包括去除形成在硅纳米线的外壳上并形成氮化硅壳的氧化硅。

39. 发明授权

US07012239B2 Silicon optoelectronic device and image input/output device using the silicon optoelectronic device 有权
标题翻译：硅光电器件和图像输入/输出器件采用硅光电器件
公开(公告)号：US07012239B2
公开(公告)日：2006-03-14
申请号：US10716665
申请日：2003-11-20
申请人： Jun-young Kim , Byoung-Iyong Choi , Eun-kyung Lee
发明人： Jun-young Kim , Byoung-Iyong Choi , Eun-kyung Lee
IPC分类号： H01L31/00
CPC分类号： H01L31/125 , H01L31/173
摘要： A silicon optoelectronic device includes an optoelectronic device portion and a switching portion. The switching portion selectively controls the emission and detection of light by the optoelectronic device portion. The optoelectronic device portion includes: a doped region of the opposite type to an n- or p-type silicon-based substrate, in which emission and detection of light occurs due to quantum confinement effect at the p-n junction between the doped region and the substrate, and at least one semiconductor material region formed on the rear surface of the substrate, at least a portion of which forms a stack structure with the doped region so that a built-in transistor is formed. The silicon optoelectronic device allows selective light emission and detection without any external amplifying and switching circuits, easy control the duration of light emission and detection, and can be manufactured in a series of semiconductor fabrication process.
摘要翻译：硅光电子器件包括光电器件部分和开关部分。开关部分选择性地控制由光电子器件部分发出的光的发射和检测。光电子器件部分包括：与n型或p型硅基衬底相反类型的掺杂区域，其中由于在掺杂区域和衬底之间的pn结处的量子限制效应而发生光的发射和检测以及形成在所述衬底的后表面上的至少一个半导体材料区域，其至少一部分与所述掺杂区域形成堆叠结构，从而形成内置晶体管。硅光电子器件允许选择性发光和检测，而无需任何外部放大和开关电路，便于控制发光和检测的持续时间，并且可以在一系列半导体制造工艺中制造。

40. 发明授权

US09230801B2 Graphene structure and method of fabricating the same 有权
标题翻译：石墨烯结构及其制造方法
公开(公告)号：US09230801B2
公开(公告)日：2016-01-05
申请号：US13229183
申请日：2011-09-09
申请人： Byoung-Iyong Choi , Eun-kyung Lee , Dong-mok Whang
发明人： Byoung-Iyong Choi , Eun-kyung Lee , Dong-mok Whang
IPC分类号： B32B9/00 , H01L21/02 , C01B31/04
CPC分类号： H01L21/02381 , C01B32/182 , H01L21/02428 , H01L21/02444 , H01L21/0245 , H01L21/02502 , H01L21/02505 , H01L21/02527 , H01L21/0259 , H01L21/02606 , H01L21/02664 , Y10T428/13 , Y10T428/24273 , Y10T428/24479 , Y10T428/30
摘要： A graphene structure and a method of forming the same may include a graphene formed in a three-dimensional (3D) shape, e.g., a column shape, a stacking structure, and a three-dimensionally connected structure. The graphene structure can be formed by using Ge.
摘要翻译：石墨烯结构及其形成方法可以包括以三维（3D）形状形成的石墨烯，例如柱状，堆叠结构和三维连接的结构。可以使用Ge形成石墨烯结构。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式