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31. 发明申请

US20110249365A1 PERPENDICULAR MAGNETIC RECORDING WRITE HEAD WITH IMPROVED LAMINATED MAIN POLE 有权
标题翻译：具有改进层压主要特点的磁记录磁头
公开(公告)号：US20110249365A1
公开(公告)日：2011-10-13
申请号：US12759508
申请日：2010-04-13
申请人： Alexander M. Zeltser , Stefan Maat
发明人： Alexander M. Zeltser , Stefan Maat
IPC分类号： G11B5/187 , G11B21/16
CPC分类号： G11B5/147 , G11B5/3116 , G11B5/3146 , G11B5/315
摘要： A perpendicular magnetic recording write head has an improved antiferromagnetically-coupled laminated main pole (MP) formed on a substrate. The MP has two ferromagnetic multilayers, each comprising at least one FeCo/NiFe/FeCo ferromagnetic trilayer, antiferromagnetically coupled across an antiferromagnetically coupling (AFC) film consisting essentially of ruthenium (Ru). The MP has a NiFe layer directly above the AFC film, on the side of the AFC film opposite the side facing the substrate, and in contact with the Ru AFC film and the lower FeCo layer of the upper multilayer. There is no NiFe layer directly below the Ru AFC film so the side of the AFC film facing the substrate is in direct contact with the upper FeCo layer of the lower multilayer.
摘要翻译：垂直磁记录写头具有形成在基板上的改进的反铁磁耦合叠层主极（MP）。 MP具有两个铁磁多层，每层包含至少一个FeCo / NiFe / FeCo铁磁性三层膜，反向铁磁耦合在基本上由钌（Ru）组成的反铁磁耦合（AFC）膜上。 MP具有在AFC膜正上方的NiFe层，在与基板相对的一侧的AFC膜侧，与Ru AFC膜和上部多层的下部FeCo层接触。在Ru AFC膜的正下方没有NiFe层，因此面向衬底的AFC膜的侧面与下部多层的上部FeCo层直接接触。

32. 发明申请

US20110149428A1 SLIDER FLY-HEIGHT CONTROL IN A HARD DISK DRIVE 有权
标题翻译：硬盘驱动器中的滑块飞行高度控制
公开(公告)号：US20110149428A1
公开(公告)日：2011-06-23
申请号：US12646848
申请日：2009-12-23
申请人： Luiz M. FRANCA-NETO , Bernhard E. Knigge , Stefan Maat
发明人： Luiz M. FRANCA-NETO , Bernhard E. Knigge , Stefan Maat
IPC分类号： G11B21/02
CPC分类号： G11B5/6029
摘要： In fly-height control system, a slider comprises a spin torque oscillator that is configured for generating an RF carrier signal which is out-of-band of a frequency band of read data, write data, and control signals in a hard disk drive.
摘要翻译：在飞行高度控制系统中，滑块包括自旋扭矩振荡器，其被配置为产生在硬盘驱动器中的读取数据，写入数据和控制信号的频带的带外的RF载波信号。

33. 发明申请

US20110089940A1 MAGNETORESISTIVE SENSOR EMPLOYING NITROGENATED Cu/Ag UNDER-LAYERS WITH (100) TEXTURED GROWTH AS TEMPLATES FOR CoFe, CoFeX, AND Co2(MnFe)X ALLOYS 有权
标题翻译：使用（100）纹理生长作为CoFe，CoFeX和Co2（MnFe）X合金的模板的氮化物Cu / Ag底层的磁电传感器
公开(公告)号：US20110089940A1
公开(公告)日：2011-04-21
申请号：US12581045
申请日：2009-10-16
申请人： Matthew J. Carey , Shekar B Chandrashekariaih , Jeffrey R. Childress , Stefan Maat
发明人： Matthew J. Carey , Shekar B Chandrashekariaih , Jeffrey R. Childress , Stefan Maat
IPC分类号： G01R33/02 , B05D5/12 , C23C14/35
CPC分类号： G01R33/093 , B82Y25/00 , B82Y40/00 , G11B5/3906 , H01F10/1936 , H01F10/30 , H01F10/3272 , H01F41/306 , H01F41/307
摘要： A magnetoresistive sensor that has a free layer with a face centered cubic, 100 crystal orientation formed on an underlayer structure that has been deposited in the presence of nitrogen. The free layer can be constructed of CoFe, Co2(Mn(1-y)Fey)X (where 0≦y≦1 and X is Si, Ge, Sn, Al, Ga, or a combination thereof), CoFeX (where X is Si, Ge, Sn, Al, Ga, or a combination thereof). The under-layer can include a layer of Ta, a Cu layer formed over the layer of Ta and deposited using a process gas comprising about 20 percent nitrogen and a layer of Ag deposited over the layer of Cu and deposited using a process gas comprising about 50 to 100 percent nitrogen.
摘要翻译：磁阻传感器具有形成在已经在氮存在下沉积的底层结构上的面心立方晶体取向的自由层。自由层可以由CoFe，Co2（Mn（1-y）Fey）X（其中0＆nlE; y＆nlE; 1和X是Si，Ge，Sn，Al，Ga或它们的组合），CoFeX（其中X 是Si，Ge，Sn，Al，Ga或它们的组合）。底层可以包括一层Ta，在层Ta上形成的Cu层，并使用包含约20％的氮和沉积在Cu层上的沉积层的工艺气体沉积，并使用包含约 50至100％的氮气。

34. 发明授权

US07833388B2 End point detection for direct ion milling to induce magnetic anisotropy in a magnetic layer 有权
标题翻译：用于直接离子研磨以在磁性层中诱导磁各向异性的终点检测
公开(公告)号：US07833388B2
公开(公告)日：2010-11-16
申请号：US11615865
申请日：2006-12-22
申请人： Matthew Joseph Carey , Jeffrey Robinson Childress , Stefan Maat
发明人： Matthew Joseph Carey , Jeffrey Robinson Childress , Stefan Maat
IPC分类号： C23C14/34
CPC分类号： G11B5/3166 , G11B5/3163 , G11B5/3196 , G11B5/3932 , G11C11/14 , H01L43/12 , Y10T29/49021 , Y10T29/49044 , Y10T29/49046
摘要： A method for manufacturing a magnetic layer with a magnetic anisotropy. The method includes an endpoint detection process for determining an end point to carefully control the final thickness of the magnetic layer. The method includes depositing a magnetic layer and then depositing a sacrificial layer over the magnetic layer. A low power angled ion milling is then performed until the magnetic layer has been reached. The angled ion milling can be performed at an angle relative to normal and without rotation in order to form an anisotropic surface texture that induces a magnetic anisotropy in the magnetic layer. An indicator layer may be included between the magnetic layer and the sacrificial layer in order to further improve endpoint detection.
摘要翻译：一种制造具有磁各向异性的磁性层的方法。该方法包括用于确定终点的端点检测过程以仔细地控制磁性层的最终厚度。该方法包括沉积磁性层，然后在磁性层上沉积牺牲层。然后执行低功率角度离子铣削，直到达到磁性层。角度离子铣削可以相对于法线成角度而不旋转地进行，以形成在磁性层中引起磁各向异性的各向异性表面纹理。为了进一步改善端点检测，可以在磁性层和牺牲层之间包括指示层。

35. 发明授权

US07826182B2 Current-perpendicular-to-the-plane (CPP) magnetoresistive sensor with CoFeGe ferromagnetic layers 有权
标题翻译：具有CoFeGe铁磁层的电流垂直平面（CPP）磁阻传感器
公开(公告)号：US07826182B2
公开(公告)日：2010-11-02
申请号：US11781576
申请日：2007-07-23
申请人： Matthew J. Carey , Jeffrey R. Childress , Stefan Maat
发明人： Matthew J. Carey , Jeffrey R. Childress , Stefan Maat
IPC分类号： G11B5/127
CPC分类号： H01L43/10 , B82Y25/00 , G01R33/093 , G11B5/3906 , G11B5/398 , G11B5/3983
摘要： A current-perpendicular-to-the-plane spin-valve (CPP-SV) magnetoresistive sensor has a ferromagnetic alloy comprising Co, Fe and Ge in the sensor's free layer and/or pinned layer. The sensor may be a simple pinned structure, in which case the pinned layer may be formed of the CoFeGe ferromagnetic alloy. Alternatively, the sensor may have an AP-pinned layer structure, in which case the AP2 layer may be formed of the CoFeGe ferromagnetic alloy. The Ge-containing alloy comprises Co, Fe and Ge, wherein Ge is present in the alloy in an amount between about 20 and 40 atomic percent, and wherein the ratio of Co to Fe in the alloy is between about 0.8 and 1.2. More particularly, the CoFeGe alloy may consist essentially of only Co, Fe and Ge according to the formula (CoxFe(100-x))(100-y)Gey where the subscripts represent atomic percent, x is between about 45 and 55, and y is between about 23 and 37.
摘要翻译：电流垂直于平面的自旋阀（CPP-SV）磁阻传感器在传感器的自由层和/或固定层中具有包含Co，Fe和Ge的铁磁合金。传感器可以是简单的钉扎结构，在这种情况下，被钉扎层可以由CoFeGe铁磁合金形成。或者，传感器可以具有AP钉扎层结构，在这种情况下，AP2层可以由CoFeGe铁磁合金形成。含Ge合金包括Co，Fe和Ge，其中Ge在合金中以约20至40原子％的量存在，并且其中合金中Co与Fe的比率在约0.8和1.2之间。更具体地说，CoFeGe合金基本上仅由根据式（CoxFe（100-x））（100-y）的Co，Fe和Ge组成，其中下标表示原子百分数，x在约45和55之间， y在约23和37之间。

36. 发明授权

US07679866B2 CPP spin valve with long spin diffusion length AP1 layers 有权
标题翻译： CPP自旋阀具有长自旋扩散长度AP1层
公开(公告)号：US07679866B2
公开(公告)日：2010-03-16
申请号：US11944082
申请日：2007-11-21
申请人： Matthew Joseph Carey , Shekar Chandrashekariaih , Stefan Maat , Jeffrey Robinson Childress
发明人： Matthew Joseph Carey , Shekar Chandrashekariaih , Stefan Maat , Jeffrey Robinson Childress
IPC分类号： G11B5/39
CPC分类号： G01R33/093 , B82Y25/00 , G11B5/3906 , H01F10/3236 , H01F10/3263 , H01F10/3272
摘要： A magnetoresistive sensor having a pinned layer that includes a first magnetic layer (AP1) a second magnetic layer (AP2) and an antiparallel coupling layer sandwiched between the AP1 and AP2 layers. The AP1 layer is adjacent to a layer of antiferromagnetic material (AFM layer) and is constructed so as to have a long spin diffusion length. The long spin diffusion length of the AP1 layer minimizes the negative GMR contribution of the AP1 layer, thereby increasing the overall GMR effect of the sensor.
摘要翻译：一种具有固定层的磁阻传感器，其包括夹在AP1和AP2层之间的第一磁性层（AP1），第二磁性层（AP2）和反向平行耦合层。 AP1层与反铁磁材料层（AFM层）相邻，并被构造成具有长的自旋扩散长度。 AP1层的长自旋扩散长度使AP1层的负GMR贡献最小化，从而增加了传感器的总体GMR效应。

37. 发明授权

US07558028B2 Magnetic head with improved CPP sensor using Heusler alloys 有权
标题翻译：磁头与改进的CPP传感器使用Heusler合金
公开(公告)号：US07558028B2
公开(公告)日：2009-07-07
申请号：US11281054
申请日：2005-11-16
申请人： Matthew Joseph Carey , Jeffrey Robinson Childress , Stefan Maat
发明人： Matthew Joseph Carey , Jeffrey Robinson Childress , Stefan Maat
IPC分类号： G11B5/127
CPC分类号： G01R33/093 , B82Y10/00 , B82Y25/00 , G11B5/3929 , G11B2005/3996 , H01F10/1936 , H01F10/3263 , H01L43/10
摘要： A magnetic head including a CPP GMR read sensor that includes a reference layer, a free magnetic layer and a spacer layer that is disposed between them, where the free magnetic layer and the reference magnetic layer are each comprised of Co2MnX where X is a material selected from the group consisting of Ge, Si, Al, Ga and Sn, and where the spacer layer is comprised of a material selected from the group consisting of Ni3Sn, Ni3Sb, Ni2LiGe, Ni2LiSi, Ni2CuSn, Ni2CuSb, Cu2NiSn, Cu2NiSb, Cu2LiGe and Ag2LiSn.Further embodiments include a dual spin valve sensor where the free magnetic layers and the reference layers are each comprised of Heusler alloys.A further illustrative embodiment includes a laminated magnetic layer structure where the magnetic layers are each comprised of a ferromagnetic Heusler alloy, and where the spacer layers are comprised of a nonmagnetic Heusler alloy.
摘要翻译：包括CPP GMR读取传感器的磁头包括参考层，自由磁性层和间隔层，其中自由磁性层和参考磁性层各自包含Co2MnX，其中X是选择的材料由Ge，Si，Al，Ga和Sn组成的组中，并且间隔层由选自Ni3Sn，Ni3Sb，Ni2LiGe，Ni2LiSi，Ni2CuSn，Ni2CuSb，Cu2NiSn，Cu2NiSb，Cu2LiGe和Ag2LiSn的材料构成。。另外的实施例包括双自旋阀传感器，其中自由磁性层和参考层各自由Heusler合金构成。另外的说明性实施例包括层叠磁性层结构，其中磁性层各自包含铁磁Heusler合金，并且其中间隔层由非磁性Heusler合金构成。

38. 发明授权

US07551409B2 Current-perpendicular-to-the-plane (CPP) magnetoresistive sensor with improved ferromagnetic free layer structure 失效
标题翻译：具有改进的铁磁自由层结构的电流 - 垂直于平面（CPP）磁阻传感器
公开(公告)号：US07551409B2
公开(公告)日：2009-06-23
申请号：US11560578
申请日：2006-11-16
申请人： Matthew J. Carey , Jeffrey R. Childress , Stefan Maat
发明人： Matthew J. Carey , Jeffrey R. Childress , Stefan Maat
IPC分类号： G11B5/39
CPC分类号： G11B5/1278
摘要： A current-perpendicular-to-the-plane (CPP) magnetoresistive (MR) sensor has an improved free layer structure that includes a first ferromagnetic interface layer on the sensor's nonmagnetic spacer layer, a first electrically conductive interlayer on the first interface layer, a central ferromagnetic NiFe alloy free layer on the first interlayer, a second electrically conductive interlayer on the central free layer, and a second ferromagnetic interface layer on the second interlayer. The first ferromagnetic interface layer, central ferromagnetic free layer, and second ferromagnetic interface layer are ferromagnetically coupled together across the electrically conductive interlayers so their magnetization directions remain parallel. The free layer structure may be used in single or dual CPP sensors and in spin-valve or tunneling MR sensors.
摘要翻译：电流 - 垂直于平面（CPP）磁阻（MR）传感器具有改进的自由层结构，其包括传感器的非磁性间隔层上的第一铁磁界面层，第一界面层上的第一导电中间层，第一中间层上的中心铁磁NiFe合金自由层，中央自由层上的第二导电中间层和第二中间层上的第二铁磁界面层。第一铁磁界面层，中心铁磁自由层和第二铁磁界面层通过导电中间层铁磁耦合在一起，使得它们的磁化方向保持平行。自由层结构可用于单CPP或双CPP传感器和自旋阀或隧道式MR传感器。

39. 发明申请

US20090154025A1 SCISSORING-TYPE CURRENT-PERPENDICULAR-TO-THE-PLANE (CPP) MAGNETORESISTIVE SENSOR WITH FREE LAYERS HAVING ETCH-INDUCED UNIAXIAL MAGNETIC ANISOTROPY 有权
标题翻译：具有电流感应的单相电磁异相的自由层的分析型电流 - 平面到平面（CPP）磁传感器
公开(公告)号：US20090154025A1
公开(公告)日：2009-06-18
申请号：US11959102
申请日：2007-12-18
申请人： Matthew J. Carey , Jeffrey R. Childress , Stefan Maat , Neil Smith
发明人： Matthew J. Carey , Jeffrey R. Childress , Stefan Maat , Neil Smith
IPC分类号： G11B5/33
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G01R33/098 , G11B5/3932 , G11B2005/3996 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： A “scissoring-type” current-perpendicular-to-the-plane (CPP) magnetoresistive sensor with dual ferromagnetic sensing or free layers separated by a nonmagnetic spacer layer has improved stability as a result of etch-induced uniaxial magnetic anisotropy in each of the free layers. Each of the two ferromagnetic free layers has an etch-induced uniaxial magnetic anisotropy and an in-plane magnetic moment substantially parallel to its uniaxial anisotropy in the quiescent state, i.e., the absence of an applied magnetic field. The etch-induced uniaxial anisotropy of each of the free layers is achieved either by direct ion etching of each of the free layers, and/or by ion etching of the layer on which each of the free layers is deposited. A strong magnetic anisotropy is induced in the free layers by the etching, which favors generally orthogonal orientation of the two free layers in the quiescent state.
摘要翻译：具有双铁磁感测或由非磁性间隔层隔开的自由层的“扫描型”电流垂直平面（CPP）磁阻传感器具有改进的稳定性，这是由于每个中的蚀刻诱导的单轴磁各向异性自由层。两个铁磁自由层中的每一个具有蚀刻诱导的单轴磁各向异性和在静止状态下基本上平行于其单轴各向异性的面内磁矩，即不存在施加的磁场。每个自由层的蚀刻诱导的单轴各向异性通过对每个自由层的直接离子蚀刻和/或通过其上沉积有每个自由层的层的离子蚀刻来实现。通过蚀刻在自由层中诱发强烈的磁各向异性，这有利于静止状态下的两个自由层的大致正交取向。

40. 发明授权

US07529066B2 Magnetoresistive sensor having magnetic layers with tailored magnetic anisotropy induced by direct ion milling 失效
标题翻译：磁阻传感器具有通过直接离子铣削引起的具有定制的磁各向异性的磁性层
公开(公告)号：US07529066B2
公开(公告)日：2009-05-05
申请号：US11304033
申请日：2005-12-14
申请人： Matthew Joseph Carey , Jeffrey Robinson Childress , Stefan Maat
发明人： Matthew Joseph Carey , Jeffrey Robinson Childress , Stefan Maat
IPC分类号： G11B5/39
CPC分类号： G11B5/3932 , G11B5/3163
摘要： A magnetoresistive sensor having a magnetic anisotropy induced in one or both of the free layer and/or pinned layer. The magnetic anisotropy is induced by a surface texture formed in the surface of the magnetic layer of either or both of the free layer or pinned layer. The surface texture is formed by a direct, angled ion mill performed on the surface of the magnetic layer while holding the wafer on a stationary chuck. By applying this ion milling technique, the magnetic anisotropy of the pinned layer can be formed in a first direction (eg. perpendicular to the ABS) while the magnetic anisotropy of the free layer can be formed perpendicular to that of the pinned layer (eg. parallel to the ABS).
摘要翻译：具有在自由层和/或固定层中的一个或两个中诱发的磁各向异性的磁阻传感器。磁各向异性由在自由层或被钉扎层中的任一个或两者的磁性层表面形成的表面纹理引起。表面纹理由在磁性层的表面上执行的直接成角度的离子磨机形成，同时将晶片保持在固定的卡盘上。通过应用这种离子铣削技术，可以沿着第一方向（例如垂直于ABS）形成钉扎层的磁各向异性，同时自由层的磁各向异性可以垂直于被钉扎层的形状形成（例如，平行于ABS）。

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