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31. 发明专利

DE68921234T2 未知
公开(公告)号：DE68921234T2
公开(公告)日：1995-06-22
申请号：DE68921234
申请日：1989-04-25
申请人： APPLIED MATERIALS INC
发明人： CHENG DAVID , MAYDAN DAN , SOMEKH SASSON , STALDER KENNETH R , ANDREWS DANA L , CHANG MEI , WHITE JOHN M , WONG JERRY YUEN KUI , ZEITLIN VLADIMIR J , WANG DAVID NIN-KOU
IPC分类号： H05H1/46 , B01J3/02 , H01J37/32 , H01L21/00 , H01L21/302 , H01L21/3065 , C23F4/00
摘要： A magnetic field enhanced vacuum single wafer plasma etch reactor (60) is disclosed. The features of the reactor include an electrically-controlled stepped magnetic field for providing high rate uniform etching at high pressures; temperature controlled reactor surfaces including heated anode surfaces (66 I, 67 I) (walls and gas manifold) and a cooled wafer supporting cathode (72) and a unitary wafer exchange mechanism comprising wafer lift pins (79) which extend through the pedestal (72) and a wafer clamp ring (78). The lift pins (79) and clamp ring (78) are moved vertically by a one-axis lift mechanism (140) to accept the wafer (75) from a cooperating external robot blade (76), clamp the wafer (75) to the pedestal (72) and return the wafer (75) to the blade (76). The electrode cooling combines water cooling (170, 172, 174) for the body (128) of the electrode and a thermal conductivity-enhancing gas parallel-bowed interface between the wafer (75) and electrode (72) for keeping the wafer surface cooled despite the high power densities applied to the electrode. A gas feed-through device (175, 176, 178, 180) applies the cooling gas to the RF powered electrode (72) without breakdown of the gas. Protective coatings/layers (811, 83) of materials such as quartz are provided for surfaces such as the clamp ring (78) and gas manifold (80). The combination of these features provides a wide pressure regime, high etch rate, high throughput single wafer etcher (60) which provides uniformity, directionality and selectivity at high gas pressures, operates cleanly and incorporates in-situ self-cleaning capability.

32. 发明专利

DE3587964D1 未知
公开(公告)号：DE3587964D1
公开(公告)日：1995-02-09
申请号：DE3587964
申请日：1985-10-24
申请人： APPLIED MATERIALS INC
发明人： FOSTER ROBERT , WANG DAVID NIN-KOU , SOMEKH SASSON , MAYDAN DAN
IPC分类号： C23C16/50 , C23C16/04 , C23C16/44 , C23C16/455 , C23C16/509 , C23C16/517 , H01J37/32 , H01L21/203 , H01L21/205 , H01L21/31

33. 发明专利

DE3750502T2 未知
公开(公告)号：DE3750502T2
公开(公告)日：1995-01-12
申请号：DE3750502
申请日：1987-12-18
申请人： APPLIED MATERIALS INC
发明人： CHENG DAVID , MAYDAN DAN , SOMEKH SASSON , STALDER KENNETH R , ANDREWS DANA L , CHANG MEI , WHITE JOHN M , WONG JERRY YUEN KUI , ZEITLIN VLADIMIR J , WANG DAVID NIN-KOU
IPC分类号： H01L21/302 , C23F4/00 , H01J37/32 , H01L21/00 , H01L21/3065 , C23C16/50 , H01L21/306

34. 发明专利

DE3789142T2 未知
公开(公告)号：DE3789142T2
公开(公告)日：1994-05-26
申请号：DE3789142
申请日：1987-12-18
申请人： APPLIED MATERIALS INC
发明人： WANG DAVID NIN-KOU , WHITE JOHN M , LAW KAM S , LEUNG CISSY , UMOTOY SALVADOR P , COLLINS KENNETH S , ADAMIK JOHN A , PERLOV ILYA , MAYDAN DAN
IPC分类号： C23C16/48 , C23C16/04 , C23C16/40 , C23C16/42 , C23C16/44 , C23C16/455 , C23C16/46 , C23C16/50 , C23C16/509 , C23C16/54 , C23F4/00 , C30B25/14 , H01L21/205 , H01L21/302 , H01L21/3065 , H01L21/31 , H01L21/314 , H01L21/316 , H01L21/683
摘要： A high pressure, high throughput, single wafer, semiconductor processing reactor (10) is disclosed which is capable of thermal CVD, plasma-enhanced CVD, plasma-assisted etchback, plasma self-cleaning, and deposition topography modification by sputtering, either separately or as part of in-situ multiple step processing. The reactor includes cooperating arrays of interdigitated susceptor (16) and wafer fingers (20) which collectively remove the wafer (15) from a robot transfer blade (24) and position the wafer with variable, controlled, close parallel spacing between the wafer and the chamber gas inlet manifold (26) then return the wafer to the blade. A combined RF/gas feed-through device (36) protects against process gas leaks and applies RF energy to the gas inlet manifold without internal breakdown or deposition of the gas. The gas inlet manifold (26) is adapted for providing uniform gas flow over the wafer. Temperature-controlled internal and external manifold surfaces suppress condensation, premature reactions and decomposition and deposition on the external surfaces. The reactor also incorporates a uniform radial pumping gas system which enables uniform reactant gas flow across the wafer and directs purge gas flow downwardly and upwardly toward the periphery of the wafer for sweeping exhaust fases radially away from the wafer to prevent deposition outside the wafer and keep the chamber clean. The reactor provides uniform processing over a wide range of pressure including very high pressures. A low temperature CVD process for forming a highly conformal layer of silicon dioxide is also disclosed. The process uses very high chamber pressure and low temperature, and TEOS and ozone reactants. The low temperature CVD silicon dioxide deposition step is particularly useful for planarizing underlying stepped dielectric layers, either alone on in conjunction with a subsequent isotropic etch. A preferred in-situ multiple-step process for forming a planarized silicon dioxide layer uses (1) high rate silicon dioxide deposition at a low temperature and high pressure followed by (2) the deposition of the conformal silicon dioxide layer also at high pressure and low temperature, followed by (3) a high rate isotropic etch, preferably at low temperature and high pressure in the same reactor used for the two oxide deposition steps. Various combinations of the steps are disclosed for different applications, as is a preferred reactor self-cleaning step.

35. 发明专利

AT102397T 未知
公开(公告)号：AT102397T
公开(公告)日：1994-03-15
申请号：AT87311194
申请日：1987-12-18
申请人： APPLIED MATERIALS INC
发明人： MAYDAN DAN , SOMEKH SASSON , WANG DAVID NIN-KOU , CHENG DAVID , TOSHIMA MASATO , HARARI ISAAC , HOPPE PETER D
IPC分类号： H01L21/677 , H01L21/00

36. 发明专利

AT96184T 未知
公开(公告)号：AT96184T
公开(公告)日：1993-11-15
申请号：AT88307501
申请日：1988-08-12
申请人： APPLIED MATERIALS INC
发明人： CHANG MEI , WHITE JOHN M , WANG DAVID NIN-KOU , MAYDAN DAN
IPC分类号： C23C16/50 , C23C16/30 , C23C16/34 , C23C16/44 , C23C16/455 , C23C16/509
摘要： An inlet gas manifold (11) for a vacuum deposition chamber (10) incorporates inlet apertures (31) which increase in diameter or cross-section transverse to the direction of gas flow (22). The aperture configuration increases the dissociation gases such as nitrogen and, thus increases the rate of silicon nitride deposition provided by nitrogen gas chemistry, without requiring the use of reactants such as ammonia. While one could use ammonia in the deposition gas chemistry if desired, the process provides the option of completely eliminating ammonia The inlet manifold (11) containing the increasing-diameter gas inlet holes (31) provides enhanced control of the process and the deposited film, and is also useful for forming other dielectrics such as silicon oxide and silicon oxynitride. In particular, silicon oxynitride films are characterized by low hydrogen content and by compositional uniformity.

37. 发明专利

DE69727624D1 未知
公开(公告)号：DE69727624D1
公开(公告)日：2004-03-25
申请号：DE69727624
申请日：1997-07-15
申请人： APPLIED MATERIALS INC
发明人： REDEKER FRED C , FARHAD MOGHADAM , HANAWA HIROJI , ISHIKAWA TETSUYA , MAYDAN DAN , LI SHIJIAN , LUE BRIAN , STEGER ROBERT , WANG YAXIM , WONG MANUS , SINHA ASHOK , NOWAK FRED ROMUALD , NIAZI KAVEH , SMYTH KENNETH , STARYUIK PAVEL , KRISHHANARAJ PADMANABHAM , MURUGESH LAXMAN , ROSSMAN KENT
IPC分类号： H01L21/205 , C23C16/507 , H01J37/32 , H01L21/31 , C23C16/50
摘要： The disclosure relates to an HDP-CVD tool (10) using simultaneous deposition and sputtering of doped and undoped silicon dioxide capable of excellent gap fill and blanket film deposition on wafers. The tool of the present invention includes: two separately powered RF coils (72,74) providing a dual RF zone inductively coupled plasma source; a dual zone gas distribution system; temperature controlled surfaces within the tool; a symmetrically shaped turbomolecular pumped chamber body (12); a dual cooling zone electrostatic chuck; an all ceramic/aluminum alloy chamber; and a remote plasma chamber cleaning system.

38. 发明专利

DE69415729T2 未知
公开(公告)号：DE69415729T2
公开(公告)日：1999-08-19
申请号：DE69415729
申请日：1994-06-21
申请人： APPLIED MATERIALS INC
发明人： ROBERTSON ROBERT , KOLLRACK MARC MICHAEL , LEE ANGELA T , LAW KAM , MAYDAN DAN
IPC分类号： C23C16/50 , C23C16/509 , C23C16/56 , C23C16/44 , B05D3/06 , B05D3/04
摘要： A method of limiting sticking of a body (38, substrate) to a susceptor (18) after the body (38) has been coated with a layer in a deposition chamber (12) by plasma chemical vapor deposition includes subjecting the coated body (38) to a plasma of an inactive gas, e.g., hydrogen, nitrogen, argon or ammonia, which does not adversely affect the coating and does not add additional layers to the body (38). After the coated body (38) is subjected to the plasma of the inactive gas, the body (38) is separated from the susceptor (18).

39. 发明专利

DE69130348T2 未知
公开(公告)号：DE69130348T2
公开(公告)日：1999-06-17
申请号：DE69130348
申请日：1991-07-31
申请人： APPLIED MATERIALS INC
发明人： COLLINS KENNETH S , RODERICK CRAIG A , YANG CHAN-LON , WANG DAVID N K , MAYDAN DAN
IPC分类号： C23C16/509 , H01J37/32 , C23C16/50 , H01H1/46

40. 发明专利

DE3752259D1 未知
公开(公告)号：DE3752259D1
公开(公告)日：1999-04-22
申请号：DE3752259
申请日：1987-12-18
申请人： APPLIED MATERIALS INC
发明人： WONG JERRY YUEN KUI , CHANG MEI , MAYDAN DAN , WANG DAVID NIN-KOU , MAK ALFRED W S
IPC分类号： H01L21/302 , H01L21/3065 , H01L21/3213 , H01L21/762 , H01L21/306 , H01J37/32
摘要： A process for etching single crystal silicon, polysilicon, silicide and polycide using iodide gas chemistry, is disclosed. The iodide gas chemistry etches narrow deep trenches (10) with very high aspect ratios and good profile control and without black silicon formation or other undesirable phenomena.

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