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31. 发明授权

US5121347A Apparatus for manipulating triangular wave signals used to drive a gauge having a pair of coils arranged in quadrature 失效
标题翻译：用于操纵用于驱动具有正交布置的一对线圈的量规的三角波信号的装置
公开(公告)号：US5121347A
公开(公告)日：1992-06-09
申请号：US429937
申请日：1989-11-01
申请人： Tomohisa Yamamoto , Hiroyuki Ban , Katsuyuki Miyake
发明人： Tomohisa Yamamoto , Hiroyuki Ban , Katsuyuki Miyake
IPC分类号： G01P3/489 , G01R7/00
CPC分类号： G01R7/00 , G01P3/489
摘要： An apparatus for driving a gauge having coils in quadrature to generate a resultant magnetic field in accordance with currents applied thereto and having a pointer angularly swept by the field, the apparatus having a memory to store a first data defining a relationship between a first level, indicative of the current applied to one of the coils, and an angle of the pointer. The first level has a continous waveform varying in isoceles trapezoid form over an angle range of 0.degree. to 180.degree.. The first data varies symmetrically with the isoceles trapezoid wave at the 180.degree. pointer angle over an angle range of 180.degree. to 360.degree.. The memory is arranged to store second data defining a relationship between a second level indicative of the current applied to the other coil and the pointer angle. The second level has a continuous waveform phase shifted by 90.degree. from the continuous waveform of the first data. The apparatus also has an output generator to generate output signals indicative of first and second levels related to the first and second data. A driving circuit is responsive to the output signals to drive the coils with currents proportional to the first and second levels. Each continuous waveform of the first and second data is modified so as to be cut triangularly at its corner portions.
摘要翻译：一种用于驱动具有正交线圈的量规的装置，以根据施加到其上的电流产生合成的磁场，并具有由该场被角度扫描的指针，该装置具有存储器，用于存储限定第一电平之间的关系的第一数据，指示施加到线圈中的一个的电流以及指针的角度。第一级在0°至180°的角度范围内具有等间距梯形变化的连续波形。第一个数据在角度范围为180°至360°的180°指针角度处的等方梯形波对称变化。存储器被布置为存储定义指示施加到另一个线圈的电流的第二电平与指针角度之间的关系的第二数据。第二级具有从第一数据的连续波形偏移90°的连续波形相位。该装置还具有输出发生器，以产生指示与第一和第二数据相关的第一和第二电平的输出信号。驱动电路响应于输出信号以与第一和第二电平成比例的电流来驱动线圈。第一和第二数据的每个连续波形被修改为在其角部三角形地切割。

32. 发明授权

US08192703B2 Reactor and reacting method 有权
标题翻译：反应器和反应方法
公开(公告)号：US08192703B2
公开(公告)日：2012-06-05
申请号：US12482903
申请日：2009-06-11
申请人： Hiroyuki Ban , Koji Noishiki , Kazuto Okada , Seiichi Yamamoto
发明人： Hiroyuki Ban , Koji Noishiki , Kazuto Okada , Seiichi Yamamoto
IPC分类号： B01J8/00 , B01L3/00 , B01F5/06
CPC分类号： B01J4/001 , B01F5/0471 , B01F13/0059 , B01J19/249 , B01J2219/2453 , B01J2219/2458 , B01J2219/247 , B01J2219/2485 , B01J2219/2486 , B01J2219/2487 , B01J2219/2488 , B01J2219/249
摘要： To improve reaction efficiency by increasing a contact area of first and second reactants per unit volume, without reducing dimensions of the inlet paths for the first and second reactants in a layer-thickness direction, a channel includes a first inlet path having the first reactant, a parallel second inlet path separated from the first inlet path and having the second reactant, a junction channel for causing the first and second reactants to join as separate laminar flows, and a parallel reaction channel connected with a downstream side of the junction channel for permitting the laminar flows of the first and second reactants to react at a contact interface thereof. A dimension of the reaction channel in the layer-thickness direction perpendicular to the contact interface is set to be smaller than the sum of the dimensions of the first inlet path and the second inlet path in the layer-thickness direction.
摘要翻译：为了通过增加每单位体积的第一和第二反应物的接触面积而不减少第一和第二反应物在层厚度方向上的入口路径的尺寸来提高反应效率，通道包括具有第一反应物的第一入口路径，与第一入口路径分离并具有第二反应物的平行的第二入口路径，用于使第一和第二反应物作为单独层流连接的接合通道，以及与接合通道的下游侧连接的平行反应通道，以允许第一和第二反应物的层流在其接触界面处反应。垂直于接触界面的层厚度方向上的反应通道的尺寸被设定为小于层厚度方向上的第一入口通道和第二入口通道的尺寸之和。

33. 发明授权

US07821069B2 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07821069B2
公开(公告)日：2010-10-26
申请号：US12010111
申请日：2008-01-22
申请人： Satoshi Shiraki , Hiroyuki Ban , Akira Yamada
发明人： Satoshi Shiraki , Hiroyuki Ban , Akira Yamada
IPC分类号： H01L23/62
CPC分类号： H01L27/1203 , H01L21/84 , H01L27/0629 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device includes: n transistor elements; n resistive elements; and n capacitive elements, each kind of elements coupled in series between the first and second terminals. The gate of each transistor element has a gate pad, and each transistor element includes transistor pads disposed on both sides. Each resistive element includes resistive pads disposed on both sides. Each capacitive element includes capacitive pads disposed on both sides. The gate pad other than the first stage transistor element, a corresponding resistive pad, and a corresponding capacitive pad are electrically coupled. One transistor pad, one resistive pad, and one capacitive pad in the first stage are electrically coupled. One transistor pad, one resistive pad, and one capacitive pad in the n-th stage are electrically coupled.
摘要翻译：半导体器件包括：n个晶体管元件; n电阻元件; 和n个电容元件，每种元件串联在第一和第二端子之间。每个晶体管元件的栅极具有栅极焊盘，并且每个晶体管元件包括设置在两侧的晶体管焊盘。每个电阻元件包括设置在两侧的电阻垫。每个电容元件包括设置在两侧的电容焊盘。除了第一级晶体管元件之外的栅极焊盘，对应的电阻焊盘和对应的电容焊盘是电耦合的。第一级中的一个晶体管焊盘，一个电阻焊盘和一个电容焊盘电耦合。第n级中的一个晶体管焊盘，一个电阻焊盘和一个电容焊盘电耦合。

34. 发明申请

US20070279272A1 Semiconductor device and method for manufacturing the same 审中-公开
标题翻译：半导体装置及其制造方法
公开(公告)号：US20070279272A1
公开(公告)日：2007-12-06
申请号：US11806326
申请日：2007-05-31
申请人： Satoshi Sobue , Hiroyuki Ban
发明人： Satoshi Sobue , Hiroyuki Ban
IPC分类号： H03M1/78
CPC分类号： H01L27/016 , H01L28/20
摘要： A semiconductor device includes a semiconductor substrate, a first wire disposed on the semiconductor substrate, an first insulating layer disposed on the semiconductor substrate and the wire, a first thin film resistor having a first resistance within a predetermined error range, and a second thin film resistor having a second resistance which is allowable to be out of the predetermined error range. A surface of the first insulating layer includes a first area and a second area, in which the second area is located adjacent to the first wire. The first thin film resistor is disposed in the first area, and the second thin film resistor is disposed in the second area.
摘要翻译：半导体器件包括半导体衬底，设置在半导体衬底上的第一布线，设置在半导体衬底和布线上的第一绝缘层，具有预定误差范围内的第一电阻的第一薄膜电阻和第二薄膜电阻器具有允许超出预定误差范围的第二电阻。第一绝缘层的表面包括第一区域和第二区域，其中第二区域位于第一导线附近。第一薄膜电阻器设置在第一区域中，第二薄膜电阻器设置在第二区域中。

35. 发明申请

US20070217104A1 Input protection circuit 有权
标题翻译：输入保护电路
公开(公告)号：US20070217104A1
公开(公告)日：2007-09-20
申请号：US11715421
申请日：2007-03-08
申请人： Shinichiro Nakata , Hiroyuki Ban , Satoshi Ichikawa
发明人： Shinichiro Nakata , Hiroyuki Ban , Satoshi Ichikawa
IPC分类号： H02H3/00
CPC分类号： H01L27/0255 , H01L2924/0002 , H01L2924/00
摘要： An input protection circuit comprises a reverse flow preventing diode, a series circuit of a diode and a Zener diode, and a current path forming resistor or diode. The reverse flow preventing diode is connected between an input terminal and an internal circuit. The series circuit is connected between the input terminal and a ground. The current path forming resistor or diode is connected between a first common connection point of the reverse flow preventing diode and the internal circuit and a second common connection point of the series circuit, and sets a potential at the first common connection point to be less than a potential at the input terminal when the surge voltage is applied to the input terminal.
摘要翻译：输入保护电路包括反向阻流二极管，二极管和齐纳二极管的串联电路以及电流路径形成电阻器或二极管。反向防流二极管连接在输入端和内部电路之间。串联电路连接在输入端和地之间。电流通路形成电阻器或二极管连接在反向防流二极管的第一公共连接点和内部电路之间，并且串联电路的第二公共连接点连接，并将第一公共连接点处的电位设置为小于当浪涌电压施加到输入端时在输入端子处的电位。

36. 发明申请

US20070103139A1 Current mirror circuit and constant current circuit having the same 有权
标题翻译：电流镜电路和恒流电路具有相同的功能
公开(公告)号：US20070103139A1
公开(公告)日：2007-05-10
申请号：US11589878
申请日：2006-10-31
申请人： Satoshi Sobue , Hiroyuki Ban , Shigenori Mori
发明人： Satoshi Sobue , Hiroyuki Ban , Shigenori Mori
IPC分类号： G05F3/16
CPC分类号： G05F3/265 , G05F3/267
摘要： A current mirror circuit includes transistors having bases coupled together and emitters connected to a voltage line. The current mirror circuit further includes a zener diode having an anode connected to the bases and a cathode connected to the voltage line. When a base potential of the transistors decreases, a reverse current of the zener diode increases. Therefore, the zener diode has a resistance and acts as a resistor to clamp the base potential of the transistors. A layout area of the zener diode is much smaller than that of the resistor having a resistance equal to that of the zener diode. The current mirror circuit achieves reduced chip size by using the zener diode instead of the resistor.
摘要翻译：电流镜电路包括具有耦合在一起的基极和连接到电压线的发射极的晶体管。电流镜电路还包括具有连接到基极的阳极和连接到电压线的阴极的齐纳二极管。当晶体管的基极电位降低时，齐纳二极管的反向电流增加。因此，齐纳二极管具有电阻并且用作钳位晶体管的基极电位的电阻器。齐纳二极管的布局面积远小于具有等于齐纳二极管电阻的电阻器的布局面积。电流镜电路通过使用齐纳二极管而不是电阻实现了减小的芯片尺寸。

37. 发明授权

US06922105B2 Operational amplifier 失效
标题翻译：运算放大器
公开(公告)号：US06922105B2
公开(公告)日：2005-07-26
申请号：US10632849
申请日：2003-08-04
申请人： Hiroshi Imai , Mitsuru Aoki , Hiroyuki Ban
发明人： Hiroshi Imai , Mitsuru Aoki , Hiroyuki Ban
IPC分类号： H03F1/52 , H03F3/30 , H03F3/45 , H03F3/26
CPC分类号： H03F3/3071 , H03F3/45183 , H03F2203/30036 , H03F2203/30051 , H03F2203/45324 , H03F2203/45352 , H03F2203/45632 , H03F2203/45708
摘要： In an operational amplifier, a differential amplifying circuit is configured to amplify an input voltage inputted from the input terminal. An outputting transistor is connected to the output terminal. A driving transistor is connected to the differential amplifying circuit and the outputting transistor. The driving transistor turns on according to a control signal supplied from the differential amplifying circuit to the driving circuit. The driving transistor is also configured to drive the outputting transistor according to the control signal. A control signal reducing circuit, when a voltage is applied on the driving transistor through the outputting transistor, is configured to reduce the control signal within a range that the driving transistor is kept to on state. The voltage applied on the driving transistor exceeds a predetermined threshold voltage.
摘要翻译：在运算放大器中，差分放大电路被配置为放大从输入端输入的输入电压。输出晶体管连接到输出端子。驱动晶体管连接到差分放大电路和输出晶体管。驱动晶体管根据从差分放大电路向驱动电路提供的控制信号导通。驱动晶体管也被配置为根据控制信号来驱动输出晶体管。当通过输出晶体管对驱动晶体管施加电压时，控制信号降低电路被配置为在驱动晶体管保持导通状态的范围内减少控制信号。施加在驱动晶体管上的电压超过预定阈值电压。

38. 发明授权

US06646319B2 Semiconductor device having isolating region for suppressing electrical noise 失效
公开(公告)号：US06646319B2
公开(公告)日：2003-11-11
申请号：US10175306
申请日：2002-06-20
申请人： Hirokazu Itakura , Hiroyuki Ban
发明人： Hirokazu Itakura , Hiroyuki Ban
IPC分类号： H01L2900
CPC分类号： H01L21/765 , H01L21/76264 , H01L21/76286 , H01L21/76291
摘要： A semiconductor device includes an output power device, which generates an electrical noise, and an on-chip circuit, to which the noise is transmitted. The output power device is surrounded by two isolating regions. The area between the two isolating regions is electrically connected to a field ground area by a first wiring line. The field ground area is electrically connected to a point of contact, which has ground potential. The area between the outer isolating region of the two isolating regions and another isolating region around the on-chip circuit is also electrically connected to the field ground area by a second wiring line. The first and second wiring lines are separated from each other. The electrical noise is transmitted to the field ground area and released to the point of contact. Therefore, the noise is attenuated and the transmission of the noise to the on-chip circuit is suppressed.

39. 发明授权

US06242787B1 Semiconductor device and manufacturing method thereof 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US06242787B1
公开(公告)日：2001-06-05
申请号：US08748896
申请日：1996-11-15
申请人： Yoshiaki Nakayama , Hiroshi Maeda , Makio Iida , Hiroshi Fujimoto , Mitsuhiro Saitou , Hiroshi Imai , Hiroyuki Ban
发明人： Yoshiaki Nakayama , Hiroshi Maeda , Makio Iida , Hiroshi Fujimoto , Mitsuhiro Saitou , Hiroshi Imai , Hiroyuki Ban
IPC分类号： H01L2976
CPC分类号： H01L29/7816 , H01L21/8249 , H01L27/0251 , H01L27/0623 , H01L27/085 , H01L29/063 , H01L29/1083 , H01L29/1095 , H01L29/66674 , H01L29/7395 , H01L29/7801 , H01L29/7824 , H01L29/7835
摘要： A semiconductor device including a reduced surface field strength type LDMOS transistor which can prevent the breakdown of elements at channel formation portions when a reverse voltage is applied to its drain. A P well and an N well are formed in an N-type substrate to produce a double-well structure, with a source electrode being set to be equal in electric potential to the N-type substrate. The drift region of the N well has a dopant concentration to satisfy the so-called RESURF condition, which can provide a high breakdown voltage a low ON resistance. When a reverse voltage is applied to a drain electrode, a parasitic bipolar transistor comprising the N well, the P well and the N-type substrate develops to form a current-carrying path toward a substrate, so that the element breakdown at the channel formation portions is avoidable at the application of the reverse voltage.
摘要翻译：一种包括减小表面场强度型LDMOS晶体管的半导体器件，其可以防止当向其漏极施加反向电压时在沟道形成部分处的元件的击穿。在N型衬底中形成P阱和N阱以产生双阱结构，其中源极被设置为与N型衬底的电位相等。 N阱的漂移区域具有掺杂浓度以满足所谓的RESURF条件，其可以提供高的击穿电压低导通电阻。当向漏极施加反向电压时，包括N阱，P阱和N型衬底的寄生双极晶体管形成朝向衬底的通电路径，使得元件在沟道形成时击穿在施加反向电压时部分是可避免的。

40. 发明授权

US6157246A Load driving circuit with boosting timing control 失效
标题翻译：负载驱动电路具有升压时序控制
公开(公告)号：US6157246A
公开(公告)日：2000-12-05
申请号：US109732
申请日：1998-07-02
申请人： Mitsuhiro Saitou , Hiroyuki Ban
发明人： Mitsuhiro Saitou , Hiroyuki Ban
IPC分类号： B60R21/01 , G05F1/10
CPC分类号： B60R21/017
摘要： The present invention is aimed at avoiding noise generation accompanying switching actions in booster circuits for a load such as an air-bag driving circuit. In an air-bag driving circuit, which is designed to actuate an igniting transistor 13 in response to output of a collision detecting signal from a collision detector 7 for detecting a collision condition of a vehicle so as to supply an igniting current to a squib 11 based on a voltage boosted by booster circuits 4 and 5, the boosting operation of the booster circuits 4 and 5 is inhibited while the collision detecting signal is absent and started when the collision detecting signal is output from the collision detector 7.
摘要翻译：本发明旨在避免伴随诸如气囊驱动电路的负载的升压电路中的切换动作的噪声产生。在气囊驱动电路中，其被设计成响应来自碰撞检测器7的碰撞检测信号的输出来致动点火晶体管13，用于检测车辆的碰撞状况，以便向点火器11提供点火电流基于由升压电路4和5升压的电压，当碰撞检测信号从碰撞检测器7输出时，不存在冲突检测信号并开始升压电路4和5的升压操作。

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