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31. 发明申请

WO2006102182A3 PROCESS FOR ELECTROLESS COPPER DEPOSITION 审中-公开
公开(公告)号：WO2006102182A3
公开(公告)日：2006-09-28
申请号：PCT/US2006/009920
申请日：2006-03-20
申请人： APPLIED MATERIALS, INC. , LUBOMIRSKY, Dmitry , WEIDMAN, Timothy W. , SHANMUGASUNDRAM, Arulkumar , KOVARSKY, Nicolay Y. , WIJEKOON, Kapila , CHU, Schubert S. , WU, Frederick C. , SHAH, Kavita
发明人： LUBOMIRSKY, Dmitry , WEIDMAN, Timothy W. , SHANMUGASUNDRAM, Arulkumar , KOVARSKY, Nicolay Y. , WIJEKOON, Kapila , CHU, Schubert S. , WU, Frederick C. , SHAH, Kavita
IPC分类号： H01L21/44 , H01L29/45
摘要： Embodiments of the invention provide methods for forming conductive materials within contact features on a substrate by depositing a seed layer within a feature and subsequently filling the feature with a copper-containing material during an electroless deposition process. In one example, a copper electroless deposition solution contains levelers to form convexed or concaved copper surfaces. In another example, a seed layer is selectively deposited on the bottom surface of the aperture while leaving the sidewalls substantially free of the seed material during a collimated PVD process. In another example, the seed layer is conformably deposited by a PVD process and subsequently, a portion of the seed layer and the underlayer are plasma etched to expose an underlying contact surface. In another example, a ruthenium seed layer is formed on an exposed contact surface by an ALD process utilizing the chemical precursor ruthenium tetroxide.

32. 发明申请

WO2022140164A1 SEMICONDUCTOR PROCESSING TOOL PLATFORM CONFIGURATION WITH REDUCED FOOTPRINT 审中-公开
公开(公告)号：WO2022140164A1
公开(公告)日：2022-06-30
申请号：PCT/US2021/063896
申请日：2021-12-16
申请人： APPLIED MATERIALS, INC.
发明人： MERRY, Nir , CHU, Schubert S. , KOSHTI, Sushant S. , KUCHAR, Michael C. , MYO, Nyi Oo , LEE, Songjae
IPC分类号： H01L21/67 , H01L21/677
摘要： A substrate processing system includes a factory interface having a controlled environment and a transfer chamber. The transfer chamber includes four first facets and three second facets, where each of the three second facets has a width that is narrower than that of each of the four first facets. A first processing chamber is attached to one of the four first facets. A first auxiliary chamber is attached to a first of the three second facets, where the first auxiliary chamber is smaller than the first processing chamber. A load lock is attached to a second of the three second facets and to the factory interface. A robot is attached to a bottom of the transfer chamber, the robot adapted to transfer substrates to and from the first processing chamber, the first auxiliary chamber, and the load lock.

33. 发明申请

WO2022103626A1 APPARATUS, SYSTEMS, AND METHODS OF USING ATOMIC HYDROGEN RADICALS WITH SELECTIVE EPITAXIAL DEPOSITION 审中-公开
公开(公告)号：WO2022103626A1
公开(公告)日：2022-05-19
申请号：PCT/US2021/057770
申请日：2021-11-02
申请人： APPLIED MATERIALS, INC.
发明人： WU, Chen-Ying , HUANG, Yi-Chiau , YE, Zhiyuan , CHU, Schubert S. , SANCHEZ, Errol Antonio C. , BURROWS, Brian Hayes
IPC分类号： C30B33/12 , C30B33/02 , C30B25/02 , C30B29/06
摘要： Aspects of the present disclosure relate to apparatus, systems, and methods of using atomic hydrogen radicals with epitaxial deposition. In one aspect, nodular defects (e.g., nodules) are removed from epitaxial layers of substrate. In one implementation, a method of processing substrates includes selectively growing an epitaxial layer on one or more crystalline surfaces of a substrate. The epitaxial layer includes silicon. The method also includes etching the substrate to remove a plurality of nodules from one or more non-crystalline surfaces of the substrate. The etching includes exposing the substrate to atomic hydrogen radicals. The method also includes thermally annealing the epitaxial layer to an anneal temperature that is 600 degrees Celsius or higher.

34. 发明申请

WO2021236290A1 STACKED PIXEL STRUCTURE FORMED USING EPITAXY 审中-公开
公开(公告)号：WO2021236290A1
公开(公告)日：2021-11-25
申请号：PCT/US2021/028867
申请日：2021-04-23
申请人： APPLIED MATERIALS, INC.
发明人： CHEN, Papo , BOLAND, John , CHU, Schubert S. , MOFFATT, Stephen , SANCHEZ, Errol Antonio C.
IPC分类号： H01L27/146 , H01L31/18 , H01L31/103
摘要： Generally, examples described herein relate to methods and processing chambers and systems for forming a stacked pixel structure using epitaxial growth processes and device structures formed thereby. In an example, a first sensor layer is epitaxially grown on a crystalline surface on a substrate. A first isolation structure is epitaxially grown on the first sensor layer. A second sensor layer is epitaxially grown on the first isolation structure. A second isolation structure is epitaxially grown on the second sensor layer. A third sensor layer is epitaxially grown on the second isolation structure.

35. 发明申请

WO2021021357A1 TEMPERATURE PROFILE MEASUREMENT AND SYNCHRONIZED CONTROL ON SUBSTRATE AND SUSCEPTOR IN AN EPITAXY CHAMBER 审中-公开
公开(公告)号：WO2021021357A1
公开(公告)日：2021-02-04
申请号：PCT/US2020/040160
申请日：2020-06-29
申请人： APPLIED MATERIALS, INC.
发明人： ZHU, Zuoming , LAU, Shu-Kwan , CHOO, Enle , MORADIAN, Ala , CHANG, Flora Fong-Song , SHAPOSHNIKOV, Maxim D. , MARATH SANKARATHODI, Bindusagar , CONG, Zhepeng , YE, Zhiyuan , NESTOROV, Vilen K. , SRIVASTAVA, Surendra Singh , CHOPRA, Saurabh , LIU, Patricia M. , SANCHEZ, Errol C. , LIN, Jenny C. , CHU, Schubert S.
IPC分类号： H01L21/67 , C30B25/10 , C30B25/08 , C30B25/16 , C23C16/48 , C23C16/52 , G01J5/00
摘要： An apparatus for controlling temperature profile of a substrate within an epitaxial chamber includes a bottom center pyrometer and a bottom outer pyrometer to respectively measure temperatures at a center location and an outer location of a first surface of a susceptor of an epitaxy chamber, a top center pyrometer and a top outer pyrometer to respectively measure temperatures at a center location and an outer location of a substrate disposed on a second surface of the susceptor opposite the first surface, a first controller to receive signals, from the bottom center pyrometer and the bottom outer pyrometer, and output a feedback signal to a first heating lamp module that heats the first surface based on the measured temperatures of the first surface, and a second controller to receive signals, from the top center pyrometer, the top outer pyrometer, the bottom center pyrometer, and the bottom outer pyrometer, and output a feedback signal to a second heating lamp module that heats the substrate based on the measured temperatures of a substrate and the measured temperatures of the first surface.

36. 发明申请

WO2020256850A1 METHOD FOR FORMING SILICON-PHOSPHOROUS MATERIALS 审中-公开
公开(公告)号：WO2020256850A1
公开(公告)日：2020-12-24
申请号：PCT/US2020/031830
申请日：2020-05-07
申请人： APPLIED MATERIALS, INC.
发明人： SANCHEZ, Errol Antonio C. , SALY, Mark J. , CHU, Schubert S. , DUBE, Abhishek , NATARAJAN, Srividya
IPC分类号： H01L21/02 , C30B25/02 , C30B29/06
摘要： Embodiments generally relate to methods for depositing silicon-phosphorous materials, and more specifically, relate to using silicon-phosphorous compounds in vapor deposition processes (e.g., epitaxy, CVD, or ALD) to deposit silicon- phosphorous materials. In one or more embodiments, a method for forming a silicon-phosphorous material on a substrate is provided and includes exposing the substrate to a deposition gas containing one or more silicon-phosphorous compounds during a deposition process and depositing a film containing the silicon-phosphorous material on the substrate. The silicon-phosphorous compound has the chemical formula [(R 3- v H v Si)-(R 2-w H w Si) n ] x PH y R' z , where each instance of R and each instance of R' are independently an alkyl or a halogen, n is 0, 1, or 2; v is 0, 1, 2, or 3; w is 0, 1, or 2; x is 1, 2, or 3; y is 0, 1, or 2; z is 0, 1, or 2, and where x + y + z = 3.

37. 发明申请

WO2020060751A1 IN-SITU INTEGRATED CHAMBERS 审中-公开
公开(公告)号：WO2020060751A1
公开(公告)日：2020-03-26
申请号：PCT/US2019/049334
申请日：2019-09-03
申请人： APPLIED MATERIALS, INC.
发明人： LI, Xuebin , CHU, Schubert S. , SANCHEZ, Errol Antonio C. , LIU, Patricia M. , THAREJA, Gaurav , HUNG, Raymond Hoiman
IPC分类号： H01L21/67 , H01L21/677
摘要： The systems and methods discussed herein are for a cluster tool that can be used for MOSFET device fabrication, including NMOS and PMOS devices. The cluster tool includes process chambers for pre-cleaning, metal-silicide or metal-germanide film formation, and surface protection operations such as capping and nitridation. The cluster tool can include one or more process chambers configured to form a source and a drain. The devices fabricated in the cluster tool are fabricated to have at least one protective layer formed over the metal-silicide or metal-germanide film to protect the film from contamination during handling and transfer to separate systems.

38. 发明申请

WO2018052477A3 AN INTEGRATED METHOD FOR WAFER OUTGASSING REDUCTION 审中-公开
公开(公告)号：WO2018052477A3
公开(公告)日：2018-03-22
申请号：PCT/US2017/015348
申请日：2017-01-27
申请人： APPLIED MATERIALS, INC.
发明人： YAN, Chun , BAO, Xinyu , CHUNG, Hua , CHU, Schubert S.
IPC分类号： H01L21/3065 , H01L21/20 , H01L21/02 , H01L21/67
摘要： Implementations disclosed herein relate to methods for controlling substrate outgassing. In one implementation, the method includes removing oxides from an exposed surface of a substrate in an inductively coupled plasma chamber, forming an epitaxial layer on the exposed surface of the substrate in an epitaxial deposition chamber, and performing an outgassing control of the substrate by subjecting the substrate to a first plasma formed from a first etch precursor in the inductively coupled plasma chamber at a first chamber pressure, wherein the first etch precursor comprises a hydrogen-containing precursor, a chlorine-containing precursor, and an inert gas, and subjecting the substrate to a second plasma formed from a second etch precursor in the inductively coupled plasma chamber at a second chamber pressure that is higher than the first chamber pressure, wherein the second etch precursor comprises a hydrogen-containing precursor and an inert gas.

39. 发明申请

WO2018052474A2 UV RADIATION SYSTEM AND METHOD FOR ARSENIC OUTGASSING CONTROL IN SUB 7NM CMOS FABRICATION 审中-公开
标题翻译： SUB 7NM CMOS制造中紫外线辐射系统和砷中子吸收控制方法
公开(公告)号：WO2018052474A2
公开(公告)日：2018-03-22
申请号：PCT/US2017/015276
申请日：2017-01-27
申请人： APPLIED MATERIALS, INC.
发明人： YAN, Chun , BAO, Xinyu , CHUNG, Hua , CHU, Schubert S.
摘要： Implementations disclosed herein relate to methods for controlling substrate outgassing of hazardous gasses after an epitaxial process. In one implementation, the method includes providing a substrate comprising an epitaxial layer into a transfer chamber, wherein the transfer chamber has an ultraviolet (UV) lamp module disposed adjacent to a top ceiling of the transfer chamber, flowing an oxygen-containing gas into the transfer chamber through a gas line of the transfer chamber, flowing a non-reactive gas into the transfer chamber through the gas line of the transfer chamber, activating the UV lamp module to oxidize residues or species on a surface of the substrate to form an outgassing barrier layer on the surface of the substrate, ceasing the flow of the oxygen-containing gas and the nitrogen-containing gas into the transfer chamber, pumping the transfer chamber, and deactivating the UV lamp module.
摘要翻译：本文公开的实施方式涉及用于在外延工艺之后控制危险气体的衬底放气的方法。在一个实施方式中，该方法包括将包括外延层的衬底提供到传送室中，其中传送室具有设置在传送室的顶部顶部附近的紫外（UV）灯模块，使含氧气体流入通过传送室的气体管线传送传送室，通过传送室的气体管线将非反应性气体流入传送室，激活UV灯模块以氧化衬底表面上的残余物或物质以形成释气在衬底表面上形成阻挡层，停止含氧气体和含氮气体流入传送室，泵送传送室，并停用UV灯模块。

40. 发明申请

WO2017105627A1 FLAT SUSCEPTOR WITH GROOVES FOR MINIMIZING TEMPERATURE PROFILE ACROSS A SUBSTRATE 审中-公开
标题翻译：带槽的扁平接头，用于在一个基板上最小化温度曲线
公开(公告)号：WO2017105627A1
公开(公告)日：2017-06-22
申请号：PCT/US2016/058201
申请日：2016-10-21
申请人： APPLIED MATERIALS, INC.
发明人： SHAH, Kartik , CHU, Schubert S. , MYO, Nyi O. , RAMANATHAN, Karthik , COLLINS, Richard O. , CONG, Zhepeng , PATHAK, Nitin
IPC分类号： H01L21/683 , H01L21/324 , H01L21/02 , H01L21/205 , H01L21/3065 , H01L21/687
CPC分类号： C23C16/4583 , C23C16/4581 , C23C16/4584 , H01L21/67109 , H01L21/67115 , H01L21/68714 , H01L21/68735
摘要： In one embodiment, a susceptor is provided and includes a first major surface opposing a second major surface, and a plurality of contact structures disposed on the first major surface, each of the contact structures being at least partially surrounded by one or more of a plurality of radially oriented grooves and an annular groove, wherein each of the plurality of contact structures includes a substrate contact surface, each of the substrate contact surfaces is between two parallel planes separated by a distance of 0.1 millimeters, and the substrate contact surfaces define a substrate receiving surface.
摘要翻译：在一个实施例中，提供感受器并且包括与第二主表面相对的第一主表面以及设置在第一主表面上的多个接触结构，每个接触结构至少部分地其被多个径向取向的凹槽和环形凹槽中的一个或多个所围绕，其中所述多个接触结构中的每一个包括基板接触表面，每个基板接触表面位于相距0.1毫米的两个平行平面之间，并且基板接触表面限定基板接收表面。

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