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31. 发明申请

WO2017074514A1 LOW ELECTRON TEMPERATURE ETCH CHAMBER WITH INDEPENDENT CONTROL OVER PLASMA DENSITY, RADICAL COMPOSITION AND ION ENERGY FOR ATOMIC PRECISION ETCHING 审中-公开
标题翻译：具有独立控制功能的低电子温度蚀刻室，用于原子精密蚀刻的等离子体密度，自由基组成和离子能量
公开(公告)号：WO2017074514A1
公开(公告)日：2017-05-04
申请号：PCT/US2016/035313
申请日：2016-06-01
申请人： APPLIED MATERIALS, INC.
发明人： DORF, Leonid , COLLINS, Kenneth, S. , RAUF, Shahid , RAMASWAMY, Kartik , CARDUCCI, James, D. , TAVASSOLI, Hamid , REGELMAN, Olga , ZHANG, Ying
IPC分类号： H01L21/3065 , H01L21/3213 , H01L21/67 , H05H1/46
CPC分类号： H01J37/32174 , H01J37/06 , H01J37/32082 , H01J37/3233 , H01J37/32357 , H01J37/32422 , H01J37/3244 , H01J37/32458 , H01J37/32532 , H01J2237/3151 , H01J2237/3174 , H01J2237/334 , H01J2237/3348 , H01L21/3065 , H01L21/31116
摘要： The disclosure concerns a method of operating a plasma reactor having an electron beam plasma source for independently adjusting electron beam energy, plasma ion energy and radical population. The disclosure further concerns an electron beam source for a plasma reactor having an RF-driven electrode for producing the electron beam.
摘要翻译：本公开涉及一种操作具有用于独立调节电子束能量，等离子体离子能量和自由基群体的电子束等离子体源的等离子体反应器的方法。本发明还涉及具有用于产生电子束的RF驱动电极的等离子体反应器的电子束源。

32. 发明申请

WO2016148769A1 ION-ION PLASMA ATOMIC LAYER ETCH PROCESS AND REACTOR 审中-公开
标题翻译：离子等离子体原子层蚀刻工艺和反应器
公开(公告)号：WO2016148769A1
公开(公告)日：2016-09-22
申请号：PCT/US2016/013604
申请日：2016-01-15
申请人： APPLIED MATERIALS, INC.
发明人： COLLINS, Kenneth, S. , RAMASWAMY, Kartik , CARDUCCI, James, D. , RAUF, Shahid , DORF, Leonid , YANG, Yang
IPC分类号： H01L21/3065 , H01L21/265
CPC分类号： H01J37/3255 , H01J37/3233 , H01J37/32357 , H01J37/32422
摘要： A reactor with an overhead electron beam source is capable of generating an ion-ion plasma for performing an atomic layer etch process.
摘要翻译：具有顶部电子束源的反应器能够产生用于进行原子层蚀刻工艺的离子离子等离子体。

33. 发明申请

WO2013162642A1 TWO-PHASE OPERATION OF PLASMA CHAMBER BY PHASE LOCKED LOOP 审中-公开
标题翻译：通过相位锁定环进行等离子体室的两相操作
公开(公告)号：WO2013162642A1
公开(公告)日：2013-10-31
申请号：PCT/US2012/060194
申请日：2012-10-15
申请人： APPLIED MATERIALS, INC. , KOBAYASHI, Satoru , WONG, Lawrence , LIU, Jonathan , YANG, Yang , RAMASWAMY, Kartik , RAUF, Shahid , NEVIL, Shane, C. , BERA, Kallol , COLLINS, Kenneth, S.
发明人： KOBAYASHI, Satoru , WONG, Lawrence , LIU, Jonathan , YANG, Yang , RAMASWAMY, Kartik , RAUF, Shahid , NEVIL, Shane, C. , BERA, Kallol , COLLINS, Kenneth, S.
IPC分类号： H05H1/46 , H03H7/40 , H03L7/08
CPC分类号： C23C16/505 , B05C9/00 , H01J37/32091 , H01J37/32174 , H01J37/3299
摘要： Plasma distribution is controlled in a plasma reactor by controlling the phase difference between opposing RF electrodes,, in accordance with a desired or user-selected phase difference, by a phase-lock feedback control loop.
摘要翻译：通过相位锁定反馈控制回路根据期望的或用户选择的相位差来控制相对的RF电极之间的相位差，等离子体反应器中的等离子体分布被控制。

34. 发明申请

WO2013059097A1 OVERHEAD ELECTRON BEAM SOURCE FOR PLASMA ION GENERATION IN A WORKPIECE PROCESSING REGION 审中-公开
标题翻译：用于工厂加工区域中等离子体生成的OVERHEAD电子束源
公开(公告)号：WO2013059097A1
公开(公告)日：2013-04-25
申请号：PCT/US2012/060052
申请日：2012-10-12
申请人： APPLIED MATERIALS, INC. , RAMASWAMY, Kartik , BERA, Kallol , COLLINS, Kenneth, S. , RAUF, Shahid
发明人： RAMASWAMY, Kartik , BERA, Kallol , COLLINS, Kenneth, S. , RAUF, Shahid
IPC分类号： H05H1/24 , H01L21/205
CPC分类号： H01J37/32091 , H01J37/32541
摘要： A plasma reactor has a main chamber for processing a workpiece in a processing region bounded between an overhead ceiling and a workpiece support surface, the reactor having an overhead electron beam source that produces an electron beam flowing into the processing region through the ceiling of the main chamber.
摘要翻译：等离子体反应器具有用于在位于顶棚顶板和工件支撑表面之间的加工区域内加工工件的主室，所述反应器具有塔顶电子束源，其产生通过主体的天花板流入处理区域的电子束室。

35. 发明申请

WO2011028312A1 PLASMA REACTOR WITH TILTABLE OVERHEAD RF INDUCTIVE SOURCE 审中-公开
标题翻译：等离子体反应器，具有可倾斜的超导射频感应源
公开(公告)号：WO2011028312A1
公开(公告)日：2011-03-10
申请号：PCT/US2010/038286
申请日：2010-06-11
申请人： APPLIED MATERIALS, INC. , COLLINS, Kenneth, S. , NGUYEN, Andrew , SALINAS, Jeffrey, Martin , YOUSIF, Imad , XU, Ming
发明人： COLLINS, Kenneth, S. , NGUYEN, Andrew , SALINAS, Jeffrey, Martin , YOUSIF, Imad , XU, Ming
IPC分类号： H01L21/3065 , H05H1/24 , H05H1/30
CPC分类号： H01J37/32082 , H01J37/321 , H01J37/3211 , H01J37/32935
摘要： Correction of skew in plasma etch rate distribution is performed by tilting the overhead RF source power applicator about a tilt axis whose angle is determined from skew in processing data. Complete freedom of movement is provided by incorporating exactly three axial motion servos supporting a floating plate from which the overhead RF source power applicator is suspended.
摘要翻译：等离子体蚀刻速率分布的偏斜校正是通过倾斜顶置RF源功率施加器围绕倾斜轴进行的，该倾斜轴的角度由处理数据中的偏斜确定。完整的自由度通过结合三个轴向运动伺服机构来提供，该伺服机构支撑顶板RF源功率施加器悬挂在其上的浮动板。

36. 发明申请

WO2011016979A2 APPARATUS FOR VHF IMPEDANCE MATCH TUNING 审中-公开
标题翻译：用于甚高频阻抗匹配调谐的装置
公开(公告)号：WO2011016979A2
公开(公告)日：2011-02-10
申请号：PCT/US2010/042412
申请日：2010-07-19
申请人： APPLIED MATERIALS, INC. , RAMASWAMY, Kartik , HANAWA, Hiroji , COLLINS, Kenneth, S. , WONG, Lawrence , BANNA, Samer , NGUYEN, Andrew
发明人： RAMASWAMY, Kartik , HANAWA, Hiroji , COLLINS, Kenneth, S. , WONG, Lawrence , BANNA, Samer , NGUYEN, Andrew
IPC分类号： H05H1/46 , H03H7/40
CPC分类号： H01P7/04
摘要： Embodiments of impedance matching networks are provided herein. In some embodiments, an impedance matching network may include a coaxial resonator having an inner and an outer conductor. A tuning capacitor may be provided for variably controlling a resonance frequency of the coaxial resonator. The tuning capacitor may be formed by a first tuning electrode and a second tuning electrode and an intervening dielectric, wherein the first tuning electrode is formed by a portion of the inner conductor. A load capacitor may be provided for variably coupling energy from the inner conductor to a load. The load capacitor may be formed by the inner conductor, an adjustable load electrode, and an intervening dielectric.
摘要翻译：这里提供了阻抗匹配网络的实施例。在一些实施例中，阻抗匹配网络可以包括具有内导体和外导体的同轴谐振器。可以提供调谐电容器用于可变地控制同轴谐振器的谐振频率。调谐电容器可以由第一调谐电极和第二调谐电极以及居间电介质形成，其中第一调谐电极由内导体的一部分形成。负载电容器可以被提供用于将来自内部导体的能量可变地耦合到负载。负载电容器可以由内导体，可调负载电极和介入电介质形成。

37. 发明申请

WO2009017766A1 METHOD OF COATING SEMICONDUCTOR PROCESSING APPARATUS WITH PROTECTIVE YTTRIUM-CONTAINING COATINGS 审中-公开
标题翻译：涂层保护含镓涂层的半导体加工装置的方法
公开(公告)号：WO2009017766A1
公开(公告)日：2009-02-05
申请号：PCT/US2008/009221
申请日：2008-07-30
申请人： APPLIED MATERIALS, INC.
发明人： SUN, Jennifer, Y. , THACH, Senh , DEMPSTER, Jim , XU, Li , COLLINS, Kenneth, S. , DUAN, Ren-guan , GRAVES, Thomas , HE, Xiaoming , YUAN, Jie
IPC分类号： C23C16/44 , C23C28/00
CPC分类号： C23C28/042 , C23C4/11 , C23C4/18 , C23C16/4404
摘要： Methods of applying specialty ceramic materials to semiconductor processing apparatus, where the specialty ceramic materials are resistant to halogen-comprising plasmas. The specialty ceramic materials contain at least one yttrium oxide-comprising solid solution. Some embodiments of the specialty ceramic materials have been modified to provide a resistivity which reduces the possibility of arcing within a semiconductor processing chamber.
摘要翻译：将特种陶瓷材料应用于半导体加工设备的方法，其中特种陶瓷材料耐卤素等离子体。特种陶瓷材料含有至少一种含氧化钇的固溶体。已经修改了特种陶瓷材料的一些实施例以提供降低半导体处理室内的电弧的可能性的电阻率。

38. 发明申请

WO2007019500A1 COPPER CONDUCTOR ANNEALING PROCESS EMPLOYING HIGH SPEED OPTICAL ANNEALING WITH A LOW TEMPERATURE-DEPOSITED OPTICAL ABSORBER LAYER 审中-公开
标题翻译：铜导体退火工艺采用高温光学退火与低温沉积光吸收层
公开(公告)号：WO2007019500A1
公开(公告)日：2007-02-15
申请号：PCT/US2006/030888
申请日：2006-08-07
申请人： APPLIED MATERIALS, INC.
发明人： RAMASWAMY, Kartik , HANAWA, Hiroji , GALLO, Biagio , COLLINS, Kenneth, S. , MA, Kai , PARIHAR, Vijay , JENNINGS, Dean , MAYUR, Abhilash, J. , AL-BAYATI, Amir , NGUYEN, Andrew
IPC分类号： H01L21/768 , B23K26/08 , B23K26/06
CPC分类号： B23K26/0738 , B23K26/0608 , B23K26/0876 , B23K26/361 , B23K26/40 , B23K2203/172 , B23K2203/50 , H01L21/76843 , H01L21/76864 , H01L21/76873 , H01L21/76877 , H01L21/76886
摘要： A method of forming a conductor in a thin film structure on a semiconductor substrate includes forming high aspect ratio openings in a base layer having vertical side walls, depositing a dielectric barrier layer comprising a dielectric compound of a barrier metal on the surfaces of the high aspect ratio openings including the vertical side walls, depositing a metal barrier layer comprising the barrier metal on the first barrier layer, depositing a main conductor species seed layer on the metal barrier layer and depositing a main conductor layer. The method further includes annealing the main conductor layer by (a) directing light from an array of continuous wave lasers into a line of light extending at least partially across the thin film structure, and (b) translating the line of light relative to the thin film structure in a direction transverse to the line of light. The method of Claim 1 further comprising, prior to the annealing step, depositing an amorphous carbon optical absorber layer on the main conductor layer. The step of depositing an amorphous carbon optical absorber layer includes introducing a carbon-containing process gas into a reactor chamber containing the substrate in a process zone of the reactor, applying RF source power to an external reentrant conduit of the reactor to generate a reentrant toroidal RF plasma current passing through the process zone and applying a bias voltage to the substrate.
摘要翻译：在半导体衬底上形成薄膜结构中的导体的方法包括在具有垂直侧壁的基底层中形成高纵横比的开口，在高方面的表面上沉积包含阻挡金属的电介质化合物的介电阻挡层比例开口，包括垂直侧壁，在第一阻挡层上沉积包含阻挡金属的金属阻挡层，在金属阻挡层上沉积主导体种子种子层并沉积主导体层。该方法还包括通过以下步骤退火主导体层：（a）将来自连续波激光阵列的光引导至至少部分穿过薄膜结构延伸的光线，以及（b）相对于薄的平面薄膜结构在横向于光线的方向上。 2.根据权利要求1所述的方法，还包括在所述退火步骤之前，在所述主导体层上沉积无定形碳光吸收层。沉积非晶碳光吸收层的步骤包括将含碳处理气体引入反应器的反应器室中，该反应器室在反应器的处理区中，将RF源功率施加到反应器的外部折入导管以产生可重入环形 RF等离子体电流通过处理区域并向衬底施加偏置电压。

39. 发明申请

WO2004015736A2 LOW LOSS RF BIAS ELECTRODE FOR A PLASMA REACTOR WITH ENHANCED WAFER EDGE RF COUPLING AND HIGHLY EFFICIENT WAFER COOLING 审中-公开
标题翻译：用于具有增强晶圆边缘RF耦合和高效晶片冷却的等离子体反应器的低损耗RF偏置电极
公开(公告)号：WO2004015736A2
公开(公告)日：2004-02-19
申请号：PCT/US2003/025268
申请日：2003-08-11
申请人： APPLIED MATERIALS, INC.
发明人： HANAWA, Hiroji , NGUYEN, Andrew , RAMASWAMY, Kartik , COLLINS, Kenneth, S. , MONROY, Gonzalo, Antonio , PU, Bryan, Y.
IPC分类号： H01J37/20
CPC分类号： H01L21/67109 , H01J37/32706 , H01J37/32724 , H01L21/67069
摘要： A plasma reactor for processing a semiconductor wafer (130) having a wafer diameter within a vacuum chamber (100) of the reactor has a wafer support (135) pedestal in the vacuum chamber extending upwardly from a floor (115) of the vacuum chamber. The wafer support pedestal includes a top layer (205) having a generally planar surface (205a) for supporting the wafer, the top layer having a diameter on the order of the wafer diameter. A conductive base (215, 220) underlies and supports the top layer, the conductive base having a diameter at least as great as the wafer diameter. An RF power output terminal below the floor of the vacuum chamber transmits power through an elongate inner conductor (230) within and generally parallel to an axis of the wafer support pedestal, the elongate inner conductor having a bottom end connected to the RF power output terminal and a top end terminated at the conductive base. A hollow cylindrical outer conductor (285) coaxial with the inner conductor has a diameter less than the diameter of the hollow cylindrical liner wall and is separated from the elongate inner conductor by a coaxial gap. A conductive upper ground plane annulus (290) is generally coaxial with the inner and outer conductors and located in a plane near the top end of the inner conductor, the conductive upper ground plane annulus having an inner edge connected to the hollow cylindrical outer conductor and an outer edge coupled to a ground potential.
摘要翻译：用于在反应器的真空室（100）内处理具有晶片直径的半导体晶片（130）的等离子体反应器具有晶片支撑件（135），该晶片支撑件在真空室中从底板向上延伸（115）。晶片支撑基座包括具有用于支撑晶片的大致平坦表面（205a）的顶层（205），顶层具有晶片直径数量级的直径。导电基底（215,220）位于并支撑顶层，导电基底的直径至少与晶片直径一样大。在真空室的底部下方的RF功率输出端子通过细长内导体（230）传输功率，细长内导体（230）在晶圆支撑基座的轴线内且大致平行于晶圆支撑基座的轴线，细长内导体的底端连接到RF功率输出端子以及在导电基座处终止的顶端。与内导体同轴的中空圆柱形外导体（285）的直径小于中空圆柱形衬套壁的直径，并且通过同轴间隙与细长内导体分开。导电的上接地平面环（290）通常与内导体和外导体同轴并位于靠近内导体的顶端的平面中，导电的上接地平面环具有连接到中空圆柱形外导体的内边缘和一个耦合到地电位的外边缘。

40. 发明申请

WO2003105182A2 EXTERNALLY EXCITED TORROIDAL PLASMA SOURCE WITH MAGNETIC CONTROL OF ION DISTRIBUTION 审中-公开
标题翻译：具有离子分布磁控制的外部激光等离子体源
公开(公告)号：WO2003105182A2
公开(公告)日：2003-12-18
申请号：PCT/US2003/018025
申请日：2003-06-05
申请人： APPLIED MATERIALS, INC.
发明人： COLLINS, Kenneth, S. , HANAWA, Hiroji , YE, Yan , RAMASWAMY, Kartik , NGUYEN, Andrew , BARNES, Michael, S. , NGUYEN, Huong, Thanh
IPC分类号： H01J37/00
CPC分类号： H01J37/321 , H01J37/32082 , H01J37/32412
摘要： A plasma reactor is described that includes a vacuum chamber defined by an enclosure including a side wall and a workpiece support pedestal within the chamber defining a processing region overlying said pedestal. The chamber has at least a first pair of ports near opposing sides of said processing region and a first external reentrant tube is connected at respective ends thereof to the pair of ports. The reactor further includes a process gas injection apparatus (such as a gas distribution plate) and an RF power applicator coupled to the reentrant tube for applying plasma source power to process gases within the tube to produce a reentrant torroidal plasma current through the first tube and across said processing region. A magnet controls radial distribution of plasma ion density in the processing region, the magnet having an elongated pole piece defining a pole piece axis intersecting the processing region.
摘要翻译：描述了一种等离子体反应器，其包括由壳体限定的真空室，所述外壳包括在所述腔室内的侧壁和工件支撑基座，其限定覆盖所述基座的处理区域。所述腔室具有在所述处理区域的相对侧附近的至少第一对端口，并且第一外部可折入管的相应端部连接到所述一对端口。反应器还包括工艺气体注入装置（例如气体分配板）和耦合到可折入管的RF功率施加器，其用于施加等离子体源功率以处理管内的气体，以产生通过第一管的可重入环形等离子体电流，跨越所述处理区域。磁体控制处理区域中的等离子体离子密度的径向分布，磁体具有限定与加工区域相交的极片轴线的细长磁极片。

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