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1. 发明公开

EP1334514A2 DIELECTRIC ETCH CHAMBER WITH EXPANDED PROCESS WINDOW 审中-公开
标题翻译：与扩展的进程窗口介质刻蚀室
公开(公告)号：EP1334514A2
公开(公告)日：2003-08-13
申请号：EP01993018.9
申请日：2001-11-01
申请人： Applied Materials, Inc.
发明人： CARDUCCI, James, D. , NOORBAKHSH, Hamid , LEE, Evans, Y. , PU, Bryan, Y. , SHAN, Hongqing , BJORKMAN, Claes , SALIMIAN, Siamak , LUSCHER, Paul, E. , WELCH, Michael, D. , LIU, Jingbao , KOMATSU, Takehiko , DOAN, Kenny, L. , CHANG, Melody , WANG, Zhuxu , KIM, Yunsang , WANG, Ruiping
IPC分类号： H01L21/68
CPC分类号： H01L21/6875 , H01J37/32522 , H01L21/31116 , H01L21/67069 , H01L21/6833 , H01L21/68792 , H01L21/76802 , H01L21/76807 , H01L21/76897 , H01L2924/3011
摘要： A thermally controlled plasma etch chamber with an expanded processing window has a thermally controlled chamber liner, thermally differentiated gas inlets, a high evacuation capability, a magnetic confinement and adhesion improving surface textures. The internal wall surfaces of the chamber are conditioned according to one or several surface texturing treatments adapted to improve by-product adhesion thereon. The expanded flow capability enables short residence. A fluid through the one or more fluid passages formed at least partially in the chamber liner may comprise a first liner, a second liner or both a first liner and a second liner. A plurality of gas nozzles or mini-distribution plates having a small thermal mass and thermally differentiated from the temperature controlled liner or liners is introduce process gases in to the processing chamber. A plasma confinement system prevents plasma and by products from extering the pumping channel or exhaust system components. The substrate support includes an electrostatic chuck, dual zone backside cooling, and a robust electrode. The support comprises a ceramic substrate support of predetermined resistivity, a support plate having a fluid channel, and a thermally conductive layer inbetween which may comprise a presure sensitive acrylic adhesive and a metal or metal alloy.

2. 发明申请

WO2004015736A2 LOW LOSS RF BIAS ELECTRODE FOR A PLASMA REACTOR WITH ENHANCED WAFER EDGE RF COUPLING AND HIGHLY EFFICIENT WAFER COOLING 审中-公开
标题翻译：用于具有增强晶圆边缘RF耦合和高效晶片冷却的等离子体反应器的低损耗RF偏置电极
公开(公告)号：WO2004015736A2
公开(公告)日：2004-02-19
申请号：PCT/US2003/025268
申请日：2003-08-11
申请人： APPLIED MATERIALS, INC.
发明人： HANAWA, Hiroji , NGUYEN, Andrew , RAMASWAMY, Kartik , COLLINS, Kenneth, S. , MONROY, Gonzalo, Antonio , PU, Bryan, Y.
IPC分类号： H01J37/20
CPC分类号： H01L21/67109 , H01J37/32706 , H01J37/32724 , H01L21/67069
摘要： A plasma reactor for processing a semiconductor wafer (130) having a wafer diameter within a vacuum chamber (100) of the reactor has a wafer support (135) pedestal in the vacuum chamber extending upwardly from a floor (115) of the vacuum chamber. The wafer support pedestal includes a top layer (205) having a generally planar surface (205a) for supporting the wafer, the top layer having a diameter on the order of the wafer diameter. A conductive base (215, 220) underlies and supports the top layer, the conductive base having a diameter at least as great as the wafer diameter. An RF power output terminal below the floor of the vacuum chamber transmits power through an elongate inner conductor (230) within and generally parallel to an axis of the wafer support pedestal, the elongate inner conductor having a bottom end connected to the RF power output terminal and a top end terminated at the conductive base. A hollow cylindrical outer conductor (285) coaxial with the inner conductor has a diameter less than the diameter of the hollow cylindrical liner wall and is separated from the elongate inner conductor by a coaxial gap. A conductive upper ground plane annulus (290) is generally coaxial with the inner and outer conductors and located in a plane near the top end of the inner conductor, the conductive upper ground plane annulus having an inner edge connected to the hollow cylindrical outer conductor and an outer edge coupled to a ground potential.
摘要翻译：用于在反应器的真空室（100）内处理具有晶片直径的半导体晶片（130）的等离子体反应器具有晶片支撑件（135），该晶片支撑件在真空室中从底板向上延伸（115）。晶片支撑基座包括具有用于支撑晶片的大致平坦表面（205a）的顶层（205），顶层具有晶片直径数量级的直径。导电基底（215,220）位于并支撑顶层，导电基底的直径至少与晶片直径一样大。在真空室的底部下方的RF功率输出端子通过细长内导体（230）传输功率，细长内导体（230）在晶圆支撑基座的轴线内且大致平行于晶圆支撑基座的轴线，细长内导体的底端连接到RF功率输出端子以及在导电基座处终止的顶端。与内导体同轴的中空圆柱形外导体（285）的直径小于中空圆柱形衬套壁的直径，并且通过同轴间隙与细长内导体分开。导电的上接地平面环（290）通常与内导体和外导体同轴并位于靠近内导体的顶端的平面中，导电的上接地平面环具有连接到中空圆柱形外导体的内边缘和一个耦合到地电位的外边缘。

3. 发明申请

WO2002037541A3 ETCH CHAMBER FOR ETCHING DIELECTRIC LAYER WITH EXPANDED PROCESS WINDOW 审中-公开
公开(公告)号：WO2002037541A3
公开(公告)日：2002-05-10
申请号：PCT/US2001/046012
申请日：2001-11-01
申请人： APPLIED MATERIALS, INC.
发明人： CARDUCCI, James, D. , NOORBAKHSH, Hamid , LEE, Evans, Y. , PU, Bryan, Y. , SHAN, Hongqing , BJORKMAN, Claes , SALIMIAN, Siamak , LUSCHER, Paul, E. , WELCH, Michael, D. , LIU, Jingbao , KOMATSU, Takehiko , DOAN, Kenny, L. , CHANG, Melody , WANG, Zhuxu , KIM, Yunsang , WANG, Ruiping
IPC分类号： H01L21/68
摘要： A thermally controlled plasma etch chamber with an expanded processing window has a thermally controlled chamber liner, thermally differentiated gas inlets, a high evacuation capability, a magnetic confinement and adhesion improving surface textures. The internal wall surfaces of the chamber are conditioned according to one or several surface texturing treatments adapted to improve by-product adhesion thereon. The expanded flow capability enables short residence. A fluid through the one or more fluid passages formed at least partially in the chamber liner may comprise a first liner, a second liner or both a first liner and a second liner. A plurality of gas nozzles or mini-distribution plates having a small thermal mass and thermally differentiated from the temperature controlled liner or liners is introduce process gases in to the processing chamber. A plasma confinement system prevents plasma and by products from extering the pumping channel or exhaust system components. The substrate support includes an electrostatic chuck, dual zone backside cooling, and a robust electrode. The support comprises a ceramic substrate support of predetermined resistivity, a support plate having a fluid channel, and a thermally conductive layer inbetween which may comprise a presure sensitive acrylic adhesive and a metal or metal alloy.

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